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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bogdanov E. V., Pogoreltsev E. I., Kartashev A. V., Gorev M. V., Molokeev M. S., Mel'nikova S. V., Flerov I. N., Laptash N. M.
Заглавие : Thermodynamic properties of vanadium oxypentafluoride (IV) (NH4)3VOF5
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 7. - P.1271-1279. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783420070057
Примечания : Cited References: 17. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activity, project no. 18-42-243003 “Effect of Deuteration on Orientational Ordering and Phase Transitions in Ammonium Fluorine-Oxygen Vanadates”
Аннотация: The (NH4)3VOF5 crystals have been synthesized and their homogeneity and single-phase structure has been established by the X-ray diffraction, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy studies. The investigations of the temperature dependences of specific heat, entropy, strain, and pressure susceptibility show the occurrence of three phase transitions caused by the structural transformations in the (NH4)3VOF5 crystals. The T–p phase diagram shows the temperature limits of stability of the crystalline phases implemented in (NH4)3VOF5. The optical and dielectric studies disclose the ferroelastic nature of the phase transitions. An analysis of the experimental data together with the data on the isostructural (NH4)3VO2F4 crystal makes it possible to distinguish the physical properties of oxyfluorides containing vanadium of different valences (IV and V).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Begunovich L. V., Kuklin A. V., Visotin M. A., Kuzubov A. A., Tomilin F. N., Tarasov A. S., Mikhalev Y. G., Avramov P. V.
Заглавие : Triple VTe2/graphene/VTe2 heterostructures as perspective magnetic tunnel junctions
Место публикации : Appl. Surf. Sci. - 2020. - Vol. 510. - Ст.145315. - ISSN 01694332 (ISSN), DOI 10.1016/j.apsusc.2020.145315
Примечания : Cited References: 67. - This work was supported by the government contract of the Ministry of Science and Higher Education of the Russian Federation to Siberian Federal University (Grant No. 16.1455.2017/PCh ) and Russian Foundation for Basic Research , Government of Krasnoyarsk Territory , Krasnoyarsk Regional Fund of Science to the research project: “Quantum chemical modeling of Bychkov-Rashba interfaces based on transition metal compounds and nanoscaled organic fragments”. P.V.A. and A.V.K. gratefully acknowledges the financial support of National Research Foundation of Republic of Korea for support under Grant No. NRF-2017R1A2B4004440 . A.V.K. also acknowledges the US Air Force Office of Scientific Research (contract FA-9550-18-1-0032) for support. The authors would like to thank Information Technology Center, Novosibirsk State University, Institute of Computational Modelling of SB RAS, Krasnoyarsk for providing the access to supercomputer facilities, and Irkutsk Supercomputer Center of SB RAS for providing the access to HPC-cluster “Akademik V.M. Matrosov” (Irkutsk Supercomputer Center of SB RAS, Irkutsk: ISDCT SB RAS; http://hpc.icc.ru, accessed 13.05.2019 )
Аннотация: New perspective 1.4 nm thick spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers (VTe2/graphene/VTe2) were studied using ab initio DFT technique. Both possible trigonal prismatic (H-VTe2) and octahedral (T-VTe2) VTe2 phases were considered to design and study graphene-based heterostructures. It was shown that the interaction with graphene changes the electronic structure of 2D T-VTe2 from metallic to half-metallic, making T phase perspective to be used for magnetic tunnel junctions. The electronic subsystem of graphene fragment is slightly hole doped. Calculated tunnel magnetoresistance ratio for the favorable heterostructure configuration estimated within the Julliere model is 220%, which opens a way to use VTe2/graphene/VTe2 as prospective magnetic tunnel junction in novel spintronic nanodevices based on tunnel magnetic resistance and spin transfer torque effects.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kazak N. V., Rudenko V. V., Gromilov S. A., Ovchinnikov S. G., Knyazev Yu. V.
Заглавие : Structural, magnetic and electronic properties of vanadium-substituted iron warwickite
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст.H.P4. - P.79-80. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 4. - Support by the Russian Foundation for Basic Research, Russia (project no. 17-02-00826-a) and Council for Grants of the President of the Russian Federation SP-1334.2019.5 is acknowledged
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kholtobina A. S., Kovaleva E. A., Melchakova J., Ovchinnikov S. G., Kuzubov A. A.
Заглавие : Theoretical investigation of the prospect to tailor ZnO electronic properties with VP thin films
Место публикации : Nanomaterials. - 2021. - Vol. 11, Is. 6. - Ст.1412. - ISSN 20794991 (ISSN), DOI 10.3390/nano11061412
Примечания : Cited References: 75. - This research was funded by the Russian Science Foundation, grant number 20-73-00179. The authors would like to thank the Information Technology Centre, Novosibirsk State University for providing access to their supercomputers
Аннотация: The atomic and electronic structure of vanadium phosphide one-to four-atomic-layer thin films and their composites with zinc oxide substrate are modelled by means of quantum chemistry. Favorable vanadium phosphide to ZnO orientation is defined and found to remain the same for all the structures under consideration. The electronic structure of the composites is analyzed in detail. The features of the charge and spin density distribution are discussed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shvets P., Krylov A. S., Maksimova K., Goikhman A.
Заглавие : Raman spectroscopy of Wadsley phases of vanadium oxide
Колич.характеристики :14 с
Место публикации : J. Raman Spectrosc. - 2024. - Vol. 55, Is. 4. - P.445-458. - ISSN 03770486 (ISSN), DOI 10.1002/jrs.6644. - ISSN 10974555 (eISSN)
Примечания : Cited References: 133. - This work was prepared with support from the Ministry of Science and Higher Education of the Russian Federation (project FZWM-2020-0008)
Аннотация: We summarize the current knowledge on crystal structures, synthesis, applications, and Raman spectroscopy of Wadsley phases of vanadium oxide, including VO2 (B), V6O13, V4O9, V3O7, and V2O5. While these oxides have garnered significant attention for potential energy storage applications and have been studied for decades, there remains inconsistency in data regarding their characteristic Raman spectra. To address this, we synthesized a series of Wadsley phases by physical vapor deposition of amorphous vanadium oxide films and subsequent annealing in a controlled environment. X-ray diffraction studies confirmed the formation of VO2 (B), V6O13, V4O9, and V3O7. We meticulously measured the room-temperature Raman spectra of these phases, offering robust reference data for the easy identification of vanadium oxides in unknown samples. Finally, we studied low-temperature phase transitions in VO2 (B) and V6O13.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Kobyakov A. V., Yushkov V. I., Anisimov I. O., Zharkov S. M., Semenov S. V., Moiseenko, Evgeniy T.
Заглавие : Influence of a thin V2O3 spacer on interlayer interactions in Fe-Ni/V2O3/FeNi film structures
Колич.характеристики :10 с
Место публикации : Processes. - 2023. - Vol. 11, Is. 7. - Ст.2084. - ISSN 22279717 (eISSN), DOI 10.3390/pr11072084
Примечания : Cited References: 25. - The research was conducted according to the state assignment of the Ministry of Science and Higher Education of the Russian Federation and the Federal State Autonomous Educational Institution of Higher Education Siberian Federal University (No. FSRZ-2023-0008)
Аннотация: In this paper, we explore the suggestions of the results of experimental studies on low-dimensional layered systems in FeNi/V2O3/FeNi film structures. The multifunctional material V2O3 is used as an interlayer between the magnetically active FeNi layers. The films were obtained by ultrahigh vacuum magnetron sputtering on a glass substrate with a base size of 10−10 Torr. It has been found that for V2O3 films, the decrease in the metal–semiconductor transition temperature increases significantly. Magnetic characteristics were studied on the MPMS-XL SQUID magnetometer. The exchange effect occurs both in the region where the oxide has a magnetic order and in the paramagnetic region. The latter is due to the effect of the magnetic panel in the oxide package. The phenomenon of oscillation of the exchange field occurs depending on the phenomenon of intermediate observation observed experimentally.
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Вид документа : Статья из сборника (однотомник)
Шифр издания : Описание изобретения к патенту 2324656!-539779
Автор(ы) : Абрамова, Галина Михайловна, Петраковский, Герман Антонович, Киселев, Николай Иванович, Альмухаметов, Рафаил Фазыльянович
Заглавие : Магнитный ванадиевый дисульфид хрома-меди с гигантским магнитосопротивлением .-
Коллективы : Институт физики им. Л.В. Киренского Сибирского отделения РАН, Федеральная служба по интеллектуальной собственности (Роспатент), Федеральный институт промышленной собственности
Место публикации : Изобретения. Полезные модели: офиц. бюл. Фед. службы по интеллектуал. собственности (Роспатент). - 2008. - № 14. - ISBN 2313-7436
Аннотация: Изобретение относится к разработке новых сульфидных соединений с особыми магнитоэлектрическими свойствами, которые могут быть использованы в микроэлектронике. Магнитный ванадиевый дисульфид хрома-меди с гигантским магнитосопротивлением включает серу, ванадий, хром и медь при следующем соотношении компонентов, атом.%: ванадий 0,1-3,4, хром 13,6-16,9, медь 16-17, сера 66-67. Изобретение позволяет получить вещество, обладающее высоким значением намагниченности и гигантским отрицательным магнитосопротивлением в диапазоне температур 77-160 К, 2 табл., 2 ил.Scope of invention is development of new sulphide compounds with specific magnetic and electric properties for use in microelectronics. Magnetic vanadium disulphide of chromium-copper with gigantic magnetic resistance includes sulphur, vanadium, chrome and copper with the following component ratio, atomic %: vanadium 0.1-3.4, chrome 13.6-16.9, copper 16-17, and sulphur 66-67./p p num="34"EFFECT: obtained substance possesses high intensity of magnetism and gigantic negative magnetic resistance./p p num="35"2 tbl, 2 dwg
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bogdanov E. V., Pogoreltsev E. I., Gorev M. V., Molokeev M. S., Flerov I. N.
Заглавие : Effect of Deuteration on Phase Transitions in Vanadium Dioxotetrafluoride
Место публикации : Phys. Solid State. - 2019. - Vol. 61, Is. 2. - P.192-200. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783419020082
Примечания : Cited References: 35. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project: "Effect of deuterium on orientational ordering and phase transitions in ammonium fluorine oxygen vanadates," no. 18-42-243003.
Аннотация: The crystals of (ND4)3VO2F4 with a high degree of deuteration (~87%) have been grown and a significant (~1.5%) increase in the unit cell volume has been detected. The decrease in the chemical pressure leads to a change in the sequence of phase transitions due to wedging-out of one of the rhombic phases observed in (NH4)3VO2F4. The thermal physical studies have been carried out and the entropies, deformations, and pressure coefficients related to structural transformations have been determined. The T–p phase diagram has been built and the pressure and temperature boundaries of crystal phase stability have been determined. The dielectric studies demonstrate a nonferroelectric nature of the phase transitions in (ND4)3VO2F4. The experimental and model entropies are compared. Based on the decrease in the entropy as a result of deuteration, a hypothesis on significant but not limited anharmonism of vibrations of ammonia tetrahedral corresponding to the disordering is proposed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Loseva G. V., Ovchinnikov S. G., Balaev A. D., Kiselev N. I.
Заглавие : Metal-dielectric transitions, magnetism, and electronic structure in a system of manganese-doped vanadium sulfides
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2000. - Vol. 42, Is. 3. - P539-543. - ISSN 1063-7834, DOI 10.1134/1.1131245
Примечания : Cited References: 12
Предметные рубрики: TRANSPORT
Аннотация: The effect of the manganese doping of vanadium monosulfide in a system of the V1-xMnxS (0 x less than or equal to 0.3) solid solutions on their structure and thermal, electrical, and magnetic properties has been investigated. The metal-dielectric transitions are revealed in the studied ranges of concentrations and temperatures. These transitions are accompanied by a change in the magnetic properties. It is demonstrated that the correlation in changes of the electrical and magnetic properties of the sulfides under investigation is characteristic of the metal-dielectric transitions in strongly correlated systems. (C) 2000 MAIK "Nauka/Interperiodica".
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smirnov M. B., Roginskii E. M., Kazimirov V. Y., Smirnov K. S., Baddour-Hadjean R., Pereira-Ramos J. P., Zhandun V. S.
Заглавие : Spectroscopic and computational study of structural changes in γ-LiV2O5 cathodic material induced by lithium intercalation
Место публикации : J. Phys. Chem. C: American Chemical Society, 2015. - Vol. 119, Is. 36. - P.20801-20809. - ISSN 1932-7447, DOI 10.1021/acs.jpcc.5b05540
Примечания : Cited References: 36. - This work was supported by the international collaboration program between the Centre National de la Recherche Scientifique (CNRS) of France and the Russian Foundation for Basic Research (RFBR), LIBASTRAM CNRS Project 6094, and RFBR Grant 13-03-91052.
Предметные рубрики: AUGMENTED-WAVE METHOD
LIXV2O5 SYSTEM
AB-INITIO
VANADIUM PENTOXIDE
RAMAN-SPECTROSCOPY
LI INTERCALATION
OXIDE
V2O5
TRANSITION
TRANSITION
Аннотация: Structure, electronic states, and vibrational dynamics of γ-LiV2O5 were studied by combined use of quantum-chemical calculations and Raman spectroscopy. The spin-polarized DFT+U calculations correctly mimic the structural changes induced by the Li intercalation into the V2O5 framework. The analysis of the density of electronic states shows that the electrons of Li atoms are transferred to the Vb atoms and are aligned in ferromagnetic order. The charge distribution in the system reflects the change of valence state of the Vb atoms from 5+ to 4+, and it is in line with changes of Vb–O bond lengths. The calculated Raman spectrum of the γ-LiV2O5 structure is in line with the experimental Raman spectra that allows a reliable assignment of all prominent Raman peaks. Comparison of the spectra of γ-LiV2O5 and γ'-V2O5 indicates spectral signatures of structural changes induced by the Li insertion into the γ'-V2O5 lattice. Results of the study present the opportunity of using Raman spectroscopy for characterization of structural modifications of the vanadate framework upon intercalation of guest species.
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