Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (15)

Каталог журналов библиотеки ИФ СО РАН (1)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=diffusion<.>)

Общее количество найденных документов : 56
Показаны документы с 1 по 10

1-10 11-20 21-30 31-40 41-50 51-56

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mikhaleva N. S., Visotin M. A., Popov Z. I., Kuzubov A. A., Fedorov A. S.
Заглавие : Ab initio and empirical modeling of lithium atoms penetration into silicon
Место публикации : Comput. Mater. Sci.: Elsevier, 2015. - Vol. 109. - P.76-83. - ISSN 0927-0256, DOI 10.1016/j.commatsci.2015.06.024
Примечания : Cited References: 69. - The authors would like to thank the Institute of Computational Modeling SB RAS, Krasnoyarsk, Information Technology Centre Novosibirsk State University, for providing access to their computational resources. The reported study was supported by RFBR, research project No. 14-02-31071, 14-02-31309, 12-02-00640, by the Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project No. NSh-2886.2014.2), Increase Competitiveness Program of NUST "MISiS" (No. K2-2015-033). The authors also would like to thank Prof. Stephan Irle and L.R. Moskvina for fruitful discussions and helpful ideas.
Предметные рубрики: LONG CYCLE LIFE
CORE-LEVEL SPECTROSCOPY
CARBON-COATED SILICON
AUGMENTED-WAVE METHOD
ION BATTERIES
MOLECULAR-DYNAMICS
INTERATOMIC POTENTIALS
ELECTRONIC-STRUCTURE
CRYSTALLINE SILICON
SI(100)2X1 SURFACE
Ключевые слова (''Своб.индексиров.''): li-ion batteries--silicon--surface diffusion--li diffusion--density functional theory--molecular dynamics
Аннотация: A process of lithium atoms penetration into silicon (1 0 0) subsurface layers was investigated with the help of DFT method. It was shown that, while the concentration of lithium adatoms on reconstructed (1 0 0) silicon surface is low, the bonding energy of lithium atoms in the subsurface layers is smaller than the bonding energy on the surface, so lithium atoms are unlikely to migrate into the crystal. When the (1 0 0) silicon surface is covered by 2 layers of lithium, migration into the subsurface layer becomes favorable. In addition to this, the reconstruction of the surface changes to the form with symmetric dimers as the concentration increases. Thus, all possible lithium migration paths become energy-wise equal, so the rate of lithium atom transfer into silicon crystal rises. In addition to the ab initio calculations, an ad-hoc empirical interatomic potential was developed and the kinetics of lithium diffusion into silicon were studied. It was shown that lithium penetration proceeds in a layer-by-layer way with a sharp border between undoped and lithiated silicon. This is accounted for the fact that, once a tetrahedral interstice is occupied by a lithium atom, the migration barriers between the adjacent interstices become lower and the rate of diffusion increases. © 2015 Elsevier B.V. All rights reserved.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.526-529. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.526. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hybrid structure--mis transition--photoelectric effect--schottky barrier--channel switching--comparative analysis--electron hole pairs--fe films--fe layer--ferromagnetic films--hybrid structure--optical effects--optical radiations--photogeneration--planar geometries--schottky barriers--semiconductor substrate--temperature variation--critical currents--interfaces (materials)--magnetic materials--photoelectricity--schottky barrier diodes--silicon--switching circuits--transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
Scopus
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kuzmenko A. M., Mukhin A. A., Ivanov V.Yu., Bezmaternykh L. N.
Заглавие : Coupled R and Fe magnetic excitations in RFe 3(BO 3) 4 multiferroics
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.269-272. - ISBN 9783037854365, DOI 10.4028/www.scientific.net/SSP.190.269
Ключевые слова (''Своб.индексиров.''): magnetic resonance--rare-earth iron borates--terahertz spectroscopy--antiferromagnetics--coupled mode--exchange coupled--frequency ranges--g factors--iron borate--magnetic excitations--multiferroics--resonance mode--strong interaction--transmission spectrums--antiferromagnetism--electron transitions--gadolinium--ions--magnetic materials--magnetic permeability--magnetic resonance--terahertz spectroscopy--neodymium
Аннотация: Various resonance modes were observed in the transmission spectra of rare-earth iron borates RFe 3(BO 3) 4 (R = Nd 3+, Sm 3+, Gd 3+) at the frequency range 100-600 GHz, which were attributed to collective magnetic excitations in the exchange coupled Fe- and R-subsystems, i.e. antiferromagnetic (Fe) resonance and electron transitions in the R-ions. Strong interaction of the Fe and R oscillations was revealed and theoretically analyzed taking into account feature of the R-ion ground state. Intensities of the coupled modes (contributions to magnetic permeability) strongly depend on a difference of Fe and R ions g-factors that allows defining the sign of the latter. In particular, an appreciable intensity of exchange (Nd) modes in NdFe 3(BO 3) 4 is caused by g Nd?,|| < 0 whereas in GdFe 3(BO 3) 4 with gGd ? gFe ? 2 the exchange (Gd) modes were hided due to compensation of Fe and Gd contributions. In SmFe 3(BO 3) 4, despite a negligible Sm g-factor, the Sm modes were clear observed due to their excitation via coupling with the Fe-subsystem. В© (2012) Trans Tech Publications.
Scopus
Найти похожие

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Demidov A. A., Gudim, I. A., Eremin E. V.
Заглавие : Magnetic properties of Nd 0.6Dy 0.4Fe 3(BO 3) 4
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.261-264. - ISBN 9783037854365, DOI 10.4028/www.scientific.net/SSP.190.261
Ключевые слова (''Своб.индексиров.''): multiferroics--phase transitions--rare-earth ferroborates rfe 3(bo 3) 4--experimental data--magnetization curves--molecular field approximation--multiferroics--rare-earth ferroborates rfe--spin reorientation transitions--spin-flop transitions--substituted compounds--magnetic materials--magnetic properties--neodymium--phase transitions--dysprosium compounds
Аннотация: The magnetic properties of trigonal Nd 0.6Dy 0.4Fe 3(BO 3) 4 substituted compound with the competitive Nd-Fe and Dy-Fe exchange interactions have been investigated. It has been shown that in Nd 0.6Dy 0.4Fe 3(BO 3) 4a spontaneous spin-reorientation transition from an ease-axis state to an easy-plane occurs near 31 K. Anomalies of the magnetization curves are observed in a spin-flop transition induced by the magnetic field B||c. The calculations were performed using a molecularfield approximation and a crystal-field model for the rare-earth subsystem. Extensive experimental data on the magnetic properties of Nd 0.6Dy 0.4Fe 3(BO 3) 4have been interpreted and good agreement between theory and experiment has been achieved using the obtained theoretical dependences. В© (2012) Trans Tech Publications.
Scopus
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykov A. A., Gokhfeld D. M., Terent'ev K. Yu., Volochaev M. N., Petrov M. I.
Заглавие : Diffusion of strontium in the intergranular boundaries of La2–xSrxCuO4
Место публикации : Russ. J. Phys. Chem. A. - 2021. - Vol. 95, Is. 6. - P.1165-1168. - ISSN 00360244 (ISSN), DOI 10.1134/S0036024421060066
Примечания : Cited References: 11. - This work was supported by the Russian Science Foundation, project no. 17-72-10067
Аннотация: Energy dispersive X-ray spectroscopy and scanning electron microscopy are used to study La2CuO4–La1.56Sr0.44CuO4 composites with different annealing times. Maps of the strontium distribution for such systems are calculated and compared to experimental data obtained for the area of contact between two dissimilar granules. The coefficient of lattice diffusion of strontium is found. At the areas of contact between La2CuO4 and La1.56Sr0.44CuO4 granules, the strontium concentration corresponds to superconducting phase La2−xSrxCuO4 with x = 0.05–0.25. The technological parameters of synthesis affect the size and number of superconducting and normal regions. Prolonged annealing lowers the gradient of the strontium concentration, which halts the increase in the size of the superconducting regions. This saturation confirms the diffusion front model.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Korshunov M. M., Shneyder E. I.
Заглавие : Effect of short antiferromagnetic correlations on the normal and superconducting properties in copper oxides
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena: Trans Tech Publications Ltd, 2011. - Vol. 168-169. - С. 561-566. - ISSN 10120394 (ISSN); 9783037850213 (ISBN), DOI 10.4028/www.scientific.net/SSP.168-169.561
Ключевые слова (''Своб.индексиров.''): high temperature superconductivity--short range antiferromagnetic order--strong electron correlations--antiferromagnetic materials--antiferromagnetism--copper oxides--electron correlations--electron density measurement--antiferromagnetism--electron correlations--ab initio--antiferromagnetic correlations--cuprates--high-t--high-temperature superconductivity--hubbard--low energies--multiband model--short range antiferromagnetic order--strong electron correlations--superconducting properties--t-j models--antiferromagnetic orderings--superconductivity--copper oxides--high temperature superconductivity
Аннотация: The abnormal "normal" state and origin of high temperature superconductivity in cuprates are still not clear [1-2]. The strong electron correlations (SEC) are known to be one of the main difficulties for the theory of high- Tc cuprates. The conventional LDA (local density approximation) approach to the band structure fails in the regime of SEC. Various realistic multiband models of a CuO2 layer at low energy result in the effective Hubbard or t - J models [3-7]. The hybrid LDA+GTB scheme [8] generates the low-energy effective t - t? - t? - J* model with all parameters calculated ab initio.
Scopus,
eLibrary,
eLibrary
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Sadreev A. F.
Заглавие : Ab-initio investigation of thermoactivated directional transport of hydrogen molecules inside narrow carbon nanotubes
Место публикации : Phys. Status Solidi B. - 2009. - Vol. 246: 23rd Winterschool on Electronic Properties of Novel Materials (MAR 14, 2009, Kirchberg, GERMANY), Is. 11. - P.2598-2601. - ISSN 0370-1972, DOI 10.1002/pssb.200982285
Примечания : Cited References: 21. - A.S.Fedorov thanks the Institute of Computer Modeling (Krasnoyarsk, Russia) and the Joint Supercomputer Center (Moscow) for an assistence in quantum chemical calculations.
Предметные рубрики: DIFFUSION
ENERGY
Аннотация: Using the pseudopotential DFT and the empirical potential methods we calculate the potential acting to the hydrogen molecules in narrow single-wall carbon nanotubes (SWCNT) (6,0),(7,0) and (3,3). The potential forms a goffered potential surface and can be approximated as V(z, r, phi) approximate to V(0) sin(2 pi z/a) + V(r). We show that in these SWCNTs transport of molecules is given mainly by thermoactivated hoppings between minima of the periodic potential along the tube axis. Taking into account that hydrogen density distribution inside nanotube is stationary and assuming the temperature is changed linearly along the SWCNT length we show that the H(2) density is sufficiently variated, especially for the case of (6,0)SWCNT where the density on both SWCNT ends are different at similar to 30 times when the temperature is changed along the SWCNT from 300K to 1200K. Suppose that H2 molecules can penetrate in the both open SWCNT ends, the molecules would move in the direction of the temperature decreasing. This effect may be used potentially to build up a molecular pump driven by the temperature gradient along narrow nanotube. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorov A. S., Sadreev A. F.
Заглавие : Thermoactivated transport of molecules H-2 in narrow single-wall carbon nanotubes
Коллективы : RFBR [0602-16132]
Разночтения заглавия :авие SCOPUS: Thermoactivated transport of molecules H 2 in narrow single-wall carbon nanotubes
Место публикации : Eur. Phys. J. B: SPRINGER, 2009. - Vol. 69, Is. 3. - P363-368. - ISSN 1434-6028, DOI 10.1140/epjb/e2009-00152-1
Примечания : Cited References: 40. - We are grateful to S. G. Ovchinnikov for discussions. This work has been supported by RFBR grant 0602-16132.
Предметные рубрики: DIFFUSION
NANOPORES
ENERGY
MOTION
FLUIDS
Ключевые слова (''Своб.индексиров.''): hydrogen molecule--inner potential--lennard-jones potential--periodic potentials--plane wave--potential surfaces--single-wall carbon nanotubes--thermal fluctuations--tube walls--carbon nanotubes--hydrogen--molecules--single-walled carbon nanotubes (swcn)
Аннотация: By use both of the plane wave DFT and the empirical exp-6 Lennard-Jones potential methods we calculate the inner potential in narrow single-wall carbon nanotubes (SWCNT) (6, 0), (7, 0) and (3, 3) which affects the hydrogen molecules. The inner potential forms a goffered potential surface and can be approximated as V(z,r,phi)a parts per thousand V(0)sin (2 pi z/a)+V(r). We show that in these SWCNTs transport of molecules is given mainly by thermoactivated hoppings between minima of the periodic potential along the tube axis. The rate hoppings is substantially depends on temperature because of thermal fluctuations of tube wall.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
Смотреть статью,
Scopus,
WoS,
WOS,
Читать в сети ИФ
Найти похожие