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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Krylov A. S., Shipilovskikh S. A., Krylova S. N., Slyusarenko N. V., Timofeeva M., Kenzhebayeva Yu. A., Bachinin S. V., Yushina I. D., Cherepakhin A. V., Shestakov N. P., Nemtsev I. V., Vtyurin A. N., Milichko V. A.
Заглавие : Application of DUT-4 MOF structure switching for optical and electrical humidity sensing
Колич.характеристики :6 с
Место публикации : Dalton Trans. - 2024. - Vol. 53, Is. 8. - P.3459-3464. - ISSN 14779226 (ISSN), DOI 10.1039/D4DT00038B. - ISSN 14779234 (eISSN)
Примечания : Cited References: 37. - The authors acknowledge the support by the state assignment of the Kirensky Institute of Physics FRC KSC SB RAS, also this work was financially supported by the RFBR (Russian Foundation for Basic Research), project no. 21-52-12018. S. A. S. acknowledges the financial support by the Russian Science Foundation (chemical part, Grant No. 22-73-10069 "Design and application of flexible metal organic frameworks for photonics devices"). V.A.M. acknowledges the Priority 2030 Federal Academic Leadership Program Ivan Sergeev (student in ITMO Univ.) for supporting in IV curve analysis. Raman, FTIR and SEM experiments were performed in the Center for Common Use of the Krasnoyarsk Scientific Center SB RAS (Krasnoyarsk, Russia)
Аннотация: The threshold structural transformation of the DUT-4 metal–organic framework (MOF) from an ordered to distorted phase during exposure to ambient conditions has been revealed. The in situ X-ray diffraction analysis, in situ Raman and FTIR spectroscopy, scanning electron microscopy and synchronous thermal analysis have been used for investigation. The reversible effect of exposure time and humidity on such a phase transition has been confirmed. We also demonstrated that the observed phase transition correlated well with changes in the optical and electronic properties of DUT-4, paving the way to a new family of MOF-based phase change materials for optoelectronic applications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Stognei O. V., Smirnov A. N., Sitnikov A. V., Volochaev M. N.
Заглавие : Structure and electrical properties of (Mg/ZrO2)52 multilayer nanostructures
Колич.характеристики :6 с
Место публикации : Bull. Russ. Acad. Sci. Phys. - 2023. - Vol. 87, Is. 9. - P.1377-1382. - ISSN 19349432 (ISSN), DOI 10.3103/S1062873823703343. - ISSN 10628738 (eISSN)
Примечания : Cited References: 17. - This work was supported by the RF Ministry of Science and Higher Education as part of a State Task, project no. FZGM-2023-0006; and as part of project no. 075-15-2021-709 (unique identifier RF-2296.61321X0037; control measurements)
Аннотация: (Mg/ZrO2)52 multilayer nanostructures with different thicknesses of Mg layers and the same thickness of ZrO2 layers are obtained via the ion-beam sputtering of two targets in an argon medium. The thickness of one bilayer (Mg + ZrO2) varies from 3.6 to 8.5 nm. It is found that using zirconium dioxide prevents the oxidation of the magnesium phase. An electric percolation threshold is observed when the morphology of magnesium layers changes (a transition from discrete to continuous morphology) as a result of an increase in the bilayer thickness. A change of the electrotransport mechanism is identified in the (Mg/ZrO2)52 multilayer nanostructures upon passing through the percolation threshold.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Sitnikov M. N., Kharkov A. M., Abdelbaki H.
Заглавие : Effect of the electrical inhomogeneity on the magnetocapacitance sign change in the HoxMn1−xS semiconductors upon temperature and frequency variation
Место публикации : J. Mater. Sci.: Mater. Electron. - 2023. - Vol. 34, Is. 4. - Ст.284. - ISSN 1573-482X, DOI 10.1007/s10854-022-09731-3
Примечания : Cited References: 32. - Council on grants of the President of the Russian Federation, MK-620.2021.1.2, Maksim Sitnikov
Аннотация: The dielectric properties of the HoxMn1−xS (x ≤ 0.1) semiconductors in the frequency range of 100 ˂ ω ˂ 106 Hz at temperatures of 80−550 K have been studied. The temperature crossover from the Debye behavior of the permittivity to the resonance behavior has been found at low holmium concentrations in the compounds. The frequency of the crossover from the migration to dipole orientation polarization with the minimum dielectric loss has been determined. The positive and negative magnetocapacitances for two concentrations of holmium ions have been found. The temperature and frequency ranges of the magnetocapacitance sign change have been established and this phenomenon has been explained using the model of the transition from electrically inhomogeneous to homogeneous states.
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Вид документа : Однотомное издание
Шифр издания : Описание изобретения к патенту 2801388!-561310100
Автор(ы) : Боев, Никита Михайлович, Крёков, Сергей Дмитриевич, Подшивалов, Иван Валерьевич, Соловьев, Платон Николаевич, Изотов, Андрей Викторович, Негодеева, Ирина Александровна, Александровский, Александр Сергеевич
Заглавие : Устройство для передачи электрической энергии на промышленной частоте через проводящий экран .-
Коллективы : Федеральный исследовательский центр "Красноярский научный центр Сибирского отделения Российской академии наук", Федеральная служба по интеллектуальной собственности (Роспатент), Федеральный институт промышленной собственности
Место публикации : Изобретения. Полезные модели: офиц. бюл. Фед. службы по интеллектуал. собственности (Роспатент). - 2023. - № 22
Аннотация: Изобретение относится к области электротехники, предназначено для беспроводной передачи электромагнитной энергии через проводящие экраны на промышленной частоте и может быть использовано в беспроводных зарядных устройствах, в системах энергоснабжения устройств, находящихся в частично или полностью замкнутых металлических экранах. Устройство для передачи электрической энергии на промышленной частоте через проводящий экран включает передатчик электрической энергии с передающей катушкой, приемник электрической энергии с приемной катушкой, новым является то, что между передающей и приемной катушками расположен проводящий электрический ток экран, толщина которого меньше глубины скин-слоя в нем для заданной рабочей частоты, параллельно передающей и приемной катушкам подключены конденсаторы, при этомкатушки и конденсаторы образуют связанные колебательные контуры, а передача электрической энергии осуществляется на одной из резонансных частот, на которой разница междуфазами токов, текущих в приемной и передающей катушках, находится в диапазоне от 160° до 180°. Техническим результатом является обеспечение возможности передачи электрической энергии на промышленной частоте (50/60 Гц) через проводящий электрический ток экран. 17 ил.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Korovushkin M. M.
Заглавие : Electrical resistivity and the Hall effect in the doped Mott-Hubbard material with strong spin-charge coupling
Колич.характеристики :14 с
Место публикации : Phys. Scr. - 2023. - Vol. 98, Is. 12. - Ст.125922. - ISSN 00318949 (ISSN), DOI 10.1088/1402-4896/ad05ed. - ISSN 14024896 (eISSN)
Примечания : Cited References: 96. - Author is grateful to V V Val’kov, A D Fedoseev, D M Dzebisashvili and M S Shustin for fruitful discussions and permanent interest in this work. Author thanks V A Mitskan and A O Zlotnikov for technical support
Аннотация: The kinetic characteristics of the doped Mott-Hubbard material are considered within the realistic spin-fermion model which takes into account the strong spin-charge coupling. The kinetic equation constructed on the basis of the mechanism of carrier scattering on the spin fluctuations is solved using the multi-moment method, which allows one to analyze the temperature behavior of nonequilibrium distribution function in the problems of electrical resistivity ρ and the Hall coefficient RH. The calculated dependences ρ(T) and RH(T) for the underdoped and optimally doped regimes demonstrate good qualitative agreement with the experimental data. In particular, the Hall coefficient calculated for the underdoped regime reproduces the experimentally observed sharp drop and even a change in sign at low temperatures.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dudnikov V. A., Vereshchagin S. N., Solov’ev L. A., Gavrilkin S. Y., Tsvetkov A. Y., Sitnikov M. V., Orlov Yu. S.
Заглавие : Structure of metastable Sr0.8Dy0.2Co3-δ phases and their electrical and magnetic properties
Место публикации : J. Exp. Theor. Phys. - 2022. - Vol. 134, Is. 3. - P.290-299. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776122030037
Примечания : Cited References: 40. - Investigation was supported by the Russian Foundation for Basic Research (grant no. 19-03-00017). Thermal and X-ray diffraction studies were conducted in the framework of State Task 0287-2021-0013 for the Institute of Chemistry and Chemical Technologies, Siberian Branch, Russian Academy of Sciences
Аннотация: Polycrystalline Sr0.8Dy0.2Co3-δ complex cobalt oxides with a different amount of oxygen (δ = 0.26, 0.44, 0.46) have been prepared by solid-state synthesis. An increase in oxygen deficiency causes the brownmillerite phase to appear in the perovskite structure, which significantly changes its properties. At δ = 0.46, the content of the brownmillerite phase reaches 38%. A comparative analysis of the magnetic and transport properties of synthesized samples has been carried out. The asymptotic Curie temperature changes sign from positive at δ = 0.26 to negative at δ = 0.46. The magnetoresistance of the sample with δ = 0.46 is negative and exceeds 40% at T = 10 K. The temperature dependence of resistivity is characteristic of semiconductors, and the absolute values for samples at low temperatures differ almost tenfold.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Sitnikov M. N., Udod L. V., Kharkov A. M.
Заглавие : Magnetoresistance and magnetoimpedance in holmium manganese sulfides
Коллективы : Russian Foundation for Fundamental InvestigationsRussian Foundation for Basic Research (RFBR) [20-42-243002]
Место публикации : Appl. Phys. A. - 2022. - Vol. 128, Is. 2. - Ст.124. - ISSN 0947-8396, DOI 10.1007/s00339-021-05198-x. - ISSN 1432-0630(eISSN)
Примечания : Cited References: 46. - Funding was provided by Russian Foundation for Fundamental Investigations (20-42-243002)
Предметные рубрики: PHASE-SEPARATION
IMPEDANCE
Аннотация: The structure, transport characteristics, real and imaginary parts of the impedance components and electric polarization of the HoXMn1-XS (X = 0.1 and 0.2) system have been investigated in the temperature range of 80-500 K in magnetic fields of up to 12 kOe. The morphology of synthesized samples has been studied. The influence of the magnetic field on the transport characteristics, on both direct and alternating currents of holmium manganese sulfides, have been established. The negative effects of DC magnetoresistance in the region of the magnetic phase transition and positive AC magnetoimpedance up to 4% in the paramagnetic region have been established. The critical temperatures of the existence of the electric polarization have been determined. At a substitution concentration of X = 0.1, the activation character of the relaxation time versus temperature has been found. The diffusion contribution for the composition with X = 0.2 has been established by the impedance hodograph.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Grossman, Victoria G., Molokeev M. S., Bazarova, Jibzema G., Bazarov, Bair G., Sorokin, Nikolay, I
Заглавие : Structural, thermal and electrical studies of thallium-scandium-hafnium(zirconium) molybdates
Коллективы : Basic Project of BINM SB RAS [0273-2021-0008]; Government of the Russian Federation [075-15-2019-1886]
Место публикации : J. Solid State Chem. - 2022. - Vol. 307. - Ст.122832. - ISSN 0022-4596, DOI 10.1016/j.jssc.2021.122832. - ISSN 1095-726X(eISSN)
Примечания : Cited References: 56. - The work was supported by Basic Project of BINM SB RAS N degrees 0273-2021-0008. Research was conducted using equipment of the CCU BINM SB RAS. Structural analysis of materials in this study was partly sup-ported by the Research Grant No. 075-15-2019-1886 from the Government of the Russian Federation
Предметные рубрики: POSITIVE ELECTRODE MATERIAL
CRYSTAL-STRUCTURE
IONIC-CONDUCTIVITY
Аннотация: Thallium scandium hafnium molybdate Tl5ScHf(MoO4)6 and thallium scandium zirconium molybdate Tl5ScZr(MoO4)6 crystallize in trigonal symmetry with the space group . The compounds are synthesized by sintering the finely powdered simple molybdates mixture in a muffle furnace at 723–823 K for 100 h. The crystal structures of Tl5ScHf(MoO4)6 and Tl5ScZr(MoO4)6 are obtained by Rietveld method. The following unit cell parameters are calculated for Tl5ScHf(MoO4)6: a = 10.62338 (5), c = 38.0579 (2) Å, V = 3719.64 (4) Å3, Z = 6 and for Tl5ScZr(MoO4)6: a = 10.63216 (7), c = 38.0716 (3) Å, V = 3727.14 (5) Å3, Z = 6. The conductivity of the Tl5ScHf(MoO4)6 and Tl5ScZr(MoO4)6 are measured between 293 and 860 K. The ionic conductivity of Tl5ScHf(MoO4)6 and Tl5ScZr(MoO4)6 molybdates are 8 × 10−4 S/cm and 8 × 10−3 S/cm (at 773 K); the activation energy of ionic transfer are 0.8 eV and 0.3 eV respectively.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Udod L. V., Sitnikov M. N., Velikanov D. A., Molokeev M. S., Romanova O. B., Shabanov A. V.
Заглавие : Enhancement of ferromagnetism and ferroelectricity by oxygen vacancies in mullite Bi2Fe4O9 in the Bi2(Sn0.7Fe0.3)2O7-x matrix
Место публикации : J. Magn. Magn. Mater. - 2022. - Vol. 559. - Ст.169530. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2022.169530
Примечания : Cited References: 47
Аннотация: A new bismuth pyrostannate-based composite Bi2(Sn0.7Fe0.3)2O7-x/Bi2Fe4O9 (BSFO/BFO) has been obtained by the solid-state synthesis. Temperature dependences of the magnetic hysteresis and remanent magnetization and the nonlinear field dependence of the magnetization for the Bi2Fe4O9 antiferromagnet have been established. A temperature of the formation of canted sublattices in the antiferromagnet with the occurrence of a spontaneous moment in mullite has been determined. The mechanism of the electric polarization hysteresis and the temperature dependence of the remanent polarization have been established. It has been shown, that, below the Néel temperature, the dipole polarization is induced by a lone electron pair of bismuth ions. At T TN, the migration polarization is caused by the charge carrier density at the chemical potential. A significant increase in the remanent magnetization of mullite in the bismuth pyrostannate matrix with oxygen vacancies over a value typical of polycrystalline mullite has been established. Remanent magnetization is explained in terms of ferron model.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Sitnikov M. N., Udod L. V., Shabanov A. V., Yanushkevich K. I., Galyas A. I., Zhivulko A. M.
Заглавие : Structural and electronic transitions in thulium-substituted manganese selenide
Место публикации : Ceram. Int. - 2022. - Vol. 48, Is. 20. - P.29822-29828. - ISSN 02728842 (ISSN), DOI 10.1016/j.ceramint.2022.06.244
Примечания : Cited References: 40. - This work has been supported by the grants the Russian Science Foundation, RSF 23-42-10002 and F23RSF-055. The morphology of the samples TmXMn1‒XSe (0 ≤ Х ≤ 0.2) was examined using equipment's (SEM) the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS»
Аннотация: The structural, transport, optical, and acoustic properties of a new TmXMn1‒XSe (0 ≤ Х ≤ 0.2) chalcogenide system have been studied in the temperature range of 80–500 K. The morphology and microstructure of the polycrystalline samples have been studied by scanning electron microscopy. Temperatures of maxima of the thermal expansion and sound attenuation coefficients related to the lattice strain and electronic transitions have been determined. The variation in the energy of activation of carriers near the percolation concentration caused by a change in the thulium valence has been revealed. The type of majority carriers has been established from the thermopower data. The temperature range of the anomalous compressibility associated with delocalization of electrons has been found from the temperature dependence of the thermal expansion coefficient. Jahn‒Teller polarons have been found above the percolation concentration using the infrared spectroscopy data.
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