Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Krylov A. S., Shipilovskikh S. A., Krylova S. N., Slyusarenko N. V., Timofeeva M., Kenzhebayeva Yu. A., Bachinin S. V., Yushina I. D., Cherepakhin A. V., Shestakov N. P., Nemtsev I. V., Vtyurin A. N., Milichko V. A.
Заглавие : Application of DUT-4 MOF structure switching for optical and electrical humidity sensing
Колич.характеристики :6 с
Место публикации : Dalton Trans. - 2024. - Vol. 53, Is. 8. - P.3459-3464. - ISSN 14779226 (ISSN), DOI 10.1039/D4DT00038B. - ISSN 14779234 (eISSN)
Примечания : Cited References: 37. - The authors acknowledge the support by the state assignment of the Kirensky Institute of Physics FRC KSC SB RAS, also this work was financially supported by the RFBR (Russian Foundation for Basic Research), project no. 21-52-12018. S. A. S. acknowledges the financial support by the Russian Science Foundation (chemical part, Grant No. 22-73-10069 "Design and application of flexible metal organic frameworks for photonics devices"). V.A.M. acknowledges the Priority 2030 Federal Academic Leadership Program Ivan Sergeev (student in ITMO Univ.) for supporting in IV curve analysis. Raman, FTIR and SEM experiments were performed in the Center for Common Use of the Krasnoyarsk Scientific Center SB RAS (Krasnoyarsk, Russia)
Аннотация: The threshold structural transformation of the DUT-4 metal–organic framework (MOF) from an ordered to distorted phase during exposure to ambient conditions has been revealed. The in situ X-ray diffraction analysis, in situ Raman and FTIR spectroscopy, scanning electron microscopy and synchronous thermal analysis have been used for investigation. The reversible effect of exposure time and humidity on such a phase transition has been confirmed. We also demonstrated that the observed phase transition correlated well with changes in the optical and electronic properties of DUT-4, paving the way to a new family of MOF-based phase change materials for optoelectronic applications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Stognei O. V., Smirnov A. N., Sitnikov A. V., Volochaev M. N.
Заглавие : Structure and electrical properties of (Mg/ZrO2)52 multilayer nanostructures
Колич.характеристики :6 с
Место публикации : Bull. Russ. Acad. Sci. Phys. - 2023. - Vol. 87, Is. 9. - P.1377-1382. - ISSN 19349432 (ISSN), DOI 10.3103/S1062873823703343. - ISSN 10628738 (eISSN)
Примечания : Cited References: 17. - This work was supported by the RF Ministry of Science and Higher Education as part of a State Task, project no. FZGM-2023-0006; and as part of project no. 075-15-2021-709 (unique identifier RF-2296.61321X0037; control measurements)
Аннотация: (Mg/ZrO2)52 multilayer nanostructures with different thicknesses of Mg layers and the same thickness of ZrO2 layers are obtained via the ion-beam sputtering of two targets in an argon medium. The thickness of one bilayer (Mg + ZrO2) varies from 3.6 to 8.5 nm. It is found that using zirconium dioxide prevents the oxidation of the magnesium phase. An electric percolation threshold is observed when the morphology of magnesium layers changes (a transition from discrete to continuous morphology) as a result of an increase in the bilayer thickness. A change of the electrotransport mechanism is identified in the (Mg/ZrO2)52 multilayer nanostructures upon passing through the percolation threshold.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Sitnikov M. N., Kharkov A. M., Abdelbaki H.
Заглавие : Effect of the electrical inhomogeneity on the magnetocapacitance sign change in the HoxMn1−xS semiconductors upon temperature and frequency variation
Место публикации : J. Mater. Sci.: Mater. Electron. - 2023. - Vol. 34, Is. 4. - Ст.284. - ISSN 1573-482X, DOI 10.1007/s10854-022-09731-3
Примечания : Cited References: 32. - Council on grants of the President of the Russian Federation, MK-620.2021.1.2, Maksim Sitnikov
Аннотация: The dielectric properties of the HoxMn1−xS (x ≤ 0.1) semiconductors in the frequency range of 100 ˂ ω ˂ 106 Hz at temperatures of 80−550 K have been studied. The temperature crossover from the Debye behavior of the permittivity to the resonance behavior has been found at low holmium concentrations in the compounds. The frequency of the crossover from the migration to dipole orientation polarization with the minimum dielectric loss has been determined. The positive and negative magnetocapacitances for two concentrations of holmium ions have been found. The temperature and frequency ranges of the magnetocapacitance sign change have been established and this phenomenon has been explained using the model of the transition from electrically inhomogeneous to homogeneous states.
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Вид документа : Однотомное издание
Шифр издания : Описание изобретения к патенту 2801388!-561310100
Автор(ы) : Боев, Никита Михайлович, Крёков, Сергей Дмитриевич, Подшивалов, Иван Валерьевич, Соловьев, Платон Николаевич, Изотов, Андрей Викторович, Негодеева, Ирина Александровна, Александровский, Александр Сергеевич
Заглавие : Устройство для передачи электрической энергии на промышленной частоте через проводящий экран .-
Коллективы : Федеральный исследовательский центр "Красноярский научный центр Сибирского отделения Российской академии наук", Федеральная служба по интеллектуальной собственности (Роспатент), Федеральный институт промышленной собственности
Место публикации : Изобретения. Полезные модели: офиц. бюл. Фед. службы по интеллектуал. собственности (Роспатент). - 2023. - № 22
Аннотация: Изобретение относится к области электротехники, предназначено для беспроводной передачи электромагнитной энергии через проводящие экраны на промышленной частоте и может быть использовано в беспроводных зарядных устройствах, в системах энергоснабжения устройств, находящихся в частично или полностью замкнутых металлических экранах. Устройство для передачи электрической энергии на промышленной частоте через проводящий экран включает передатчик электрической энергии с передающей катушкой, приемник электрической энергии с приемной катушкой, новым является то, что между передающей и приемной катушками расположен проводящий электрический ток экран, толщина которого меньше глубины скин-слоя в нем для заданной рабочей частоты, параллельно передающей и приемной катушкам подключены конденсаторы, при этомкатушки и конденсаторы образуют связанные колебательные контуры, а передача электрической энергии осуществляется на одной из резонансных частот, на которой разница междуфазами токов, текущих в приемной и передающей катушках, находится в диапазоне от 160° до 180°. Техническим результатом является обеспечение возможности передачи электрической энергии на промышленной частоте (50/60 Гц) через проводящий электрический ток экран. 17 ил.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Korovushkin M. M.
Заглавие : Electrical resistivity and the Hall effect in the doped Mott-Hubbard material with strong spin-charge coupling
Колич.характеристики :14 с
Место публикации : Phys. Scr. - 2023. - Vol. 98, Is. 12. - Ст.125922. - ISSN 00318949 (ISSN), DOI 10.1088/1402-4896/ad05ed. - ISSN 14024896 (eISSN)
Примечания : Cited References: 96. - Author is grateful to V V Val’kov, A D Fedoseev, D M Dzebisashvili and M S Shustin for fruitful discussions and permanent interest in this work. Author thanks V A Mitskan and A O Zlotnikov for technical support
Аннотация: The kinetic characteristics of the doped Mott-Hubbard material are considered within the realistic spin-fermion model which takes into account the strong spin-charge coupling. The kinetic equation constructed on the basis of the mechanism of carrier scattering on the spin fluctuations is solved using the multi-moment method, which allows one to analyze the temperature behavior of nonequilibrium distribution function in the problems of electrical resistivity ρ and the Hall coefficient RH. The calculated dependences ρ(T) and RH(T) for the underdoped and optimally doped regimes demonstrate good qualitative agreement with the experimental data. In particular, the Hall coefficient calculated for the underdoped regime reproduces the experimentally observed sharp drop and even a change in sign at low temperatures.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dudnikov V. A., Vereshchagin S. N., Solov’ev L. A., Gavrilkin S. Y., Tsvetkov A. Y., Sitnikov M. V., Orlov Yu. S.
Заглавие : Structure of metastable Sr0.8Dy0.2Co3-δ phases and their electrical and magnetic properties
Место публикации : J. Exp. Theor. Phys. - 2022. - Vol. 134, Is. 3. - P.290-299. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776122030037
Примечания : Cited References: 40. - Investigation was supported by the Russian Foundation for Basic Research (grant no. 19-03-00017). Thermal and X-ray diffraction studies were conducted in the framework of State Task 0287-2021-0013 for the Institute of Chemistry and Chemical Technologies, Siberian Branch, Russian Academy of Sciences
Аннотация: Polycrystalline Sr0.8Dy0.2Co3-δ complex cobalt oxides with a different amount of oxygen (δ = 0.26, 0.44, 0.46) have been prepared by solid-state synthesis. An increase in oxygen deficiency causes the brownmillerite phase to appear in the perovskite structure, which significantly changes its properties. At δ = 0.46, the content of the brownmillerite phase reaches 38%. A comparative analysis of the magnetic and transport properties of synthesized samples has been carried out. The asymptotic Curie temperature changes sign from positive at δ = 0.26 to negative at δ = 0.46. The magnetoresistance of the sample with δ = 0.46 is negative and exceeds 40% at T = 10 K. The temperature dependence of resistivity is characteristic of semiconductors, and the absolute values for samples at low temperatures differ almost tenfold.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Sitnikov M. N., Udod L. V., Kharkov A. M.
Заглавие : Magnetoresistance and magnetoimpedance in holmium manganese sulfides
Коллективы : Russian Foundation for Fundamental InvestigationsRussian Foundation for Basic Research (RFBR) [20-42-243002]
Место публикации : Appl. Phys. A. - 2022. - Vol. 128, Is. 2. - Ст.124. - ISSN 0947-8396, DOI 10.1007/s00339-021-05198-x. - ISSN 1432-0630(eISSN)
Примечания : Cited References: 46. - Funding was provided by Russian Foundation for Fundamental Investigations (20-42-243002)
Предметные рубрики: PHASE-SEPARATION
IMPEDANCE
Аннотация: The structure, transport characteristics, real and imaginary parts of the impedance components and electric polarization of the HoXMn1-XS (X = 0.1 and 0.2) system have been investigated in the temperature range of 80-500 K in magnetic fields of up to 12 kOe. The morphology of synthesized samples has been studied. The influence of the magnetic field on the transport characteristics, on both direct and alternating currents of holmium manganese sulfides, have been established. The negative effects of DC magnetoresistance in the region of the magnetic phase transition and positive AC magnetoimpedance up to 4% in the paramagnetic region have been established. The critical temperatures of the existence of the electric polarization have been determined. At a substitution concentration of X = 0.1, the activation character of the relaxation time versus temperature has been found. The diffusion contribution for the composition with X = 0.2 has been established by the impedance hodograph.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Grossman, Victoria G., Molokeev M. S., Bazarova, Jibzema G., Bazarov, Bair G., Sorokin, Nikolay, I
Заглавие : Structural, thermal and electrical studies of thallium-scandium-hafnium(zirconium) molybdates
Коллективы : Basic Project of BINM SB RAS [0273-2021-0008]; Government of the Russian Federation [075-15-2019-1886]
Место публикации : J. Solid State Chem. - 2022. - Vol. 307. - Ст.122832. - ISSN 0022-4596, DOI 10.1016/j.jssc.2021.122832. - ISSN 1095-726X(eISSN)
Примечания : Cited References: 56. - The work was supported by Basic Project of BINM SB RAS N degrees 0273-2021-0008. Research was conducted using equipment of the CCU BINM SB RAS. Structural analysis of materials in this study was partly sup-ported by the Research Grant No. 075-15-2019-1886 from the Government of the Russian Federation
Предметные рубрики: POSITIVE ELECTRODE MATERIAL
CRYSTAL-STRUCTURE
IONIC-CONDUCTIVITY
Аннотация: Thallium scandium hafnium molybdate Tl5ScHf(MoO4)6 and thallium scandium zirconium molybdate Tl5ScZr(MoO4)6 crystallize in trigonal symmetry with the space group . The compounds are synthesized by sintering the finely powdered simple molybdates mixture in a muffle furnace at 723–823 K for 100 h. The crystal structures of Tl5ScHf(MoO4)6 and Tl5ScZr(MoO4)6 are obtained by Rietveld method. The following unit cell parameters are calculated for Tl5ScHf(MoO4)6: a = 10.62338 (5), c = 38.0579 (2) Å, V = 3719.64 (4) Å3, Z = 6 and for Tl5ScZr(MoO4)6: a = 10.63216 (7), c = 38.0716 (3) Å, V = 3727.14 (5) Å3, Z = 6. The conductivity of the Tl5ScHf(MoO4)6 and Tl5ScZr(MoO4)6 are measured between 293 and 860 K. The ionic conductivity of Tl5ScHf(MoO4)6 and Tl5ScZr(MoO4)6 molybdates are 8 × 10−4 S/cm and 8 × 10−3 S/cm (at 773 K); the activation energy of ionic transfer are 0.8 eV and 0.3 eV respectively.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Udod L. V., Sitnikov M. N., Velikanov D. A., Molokeev M. S., Romanova O. B., Shabanov A. V.
Заглавие : Enhancement of ferromagnetism and ferroelectricity by oxygen vacancies in mullite Bi2Fe4O9 in the Bi2(Sn0.7Fe0.3)2O7-x matrix
Место публикации : J. Magn. Magn. Mater. - 2022. - Vol. 559. - Ст.169530. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2022.169530
Примечания : Cited References: 47
Аннотация: A new bismuth pyrostannate-based composite Bi2(Sn0.7Fe0.3)2O7-x/Bi2Fe4O9 (BSFO/BFO) has been obtained by the solid-state synthesis. Temperature dependences of the magnetic hysteresis and remanent magnetization and the nonlinear field dependence of the magnetization for the Bi2Fe4O9 antiferromagnet have been established. A temperature of the formation of canted sublattices in the antiferromagnet with the occurrence of a spontaneous moment in mullite has been determined. The mechanism of the electric polarization hysteresis and the temperature dependence of the remanent polarization have been established. It has been shown, that, below the Néel temperature, the dipole polarization is induced by a lone electron pair of bismuth ions. At T TN, the migration polarization is caused by the charge carrier density at the chemical potential. A significant increase in the remanent magnetization of mullite in the bismuth pyrostannate matrix with oxygen vacancies over a value typical of polycrystalline mullite has been established. Remanent magnetization is explained in terms of ferron model.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Sitnikov M. N., Udod L. V., Shabanov A. V., Yanushkevich K. I., Galyas A. I., Zhivulko A. M.
Заглавие : Structural and electronic transitions in thulium-substituted manganese selenide
Место публикации : Ceram. Int. - 2022. - Vol. 48, Is. 20. - P.29822-29828. - ISSN 02728842 (ISSN), DOI 10.1016/j.ceramint.2022.06.244
Примечания : Cited References: 40. - This work has been supported by the grants the Russian Science Foundation, RSF 23-42-10002 and F23RSF-055. The morphology of the samples TmXMn1‒XSe (0 ≤ Х ≤ 0.2) was examined using equipment's (SEM) the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS»
Аннотация: The structural, transport, optical, and acoustic properties of a new TmXMn1‒XSe (0 ≤ Х ≤ 0.2) chalcogenide system have been studied in the temperature range of 80–500 K. The morphology and microstructure of the polycrystalline samples have been studied by scanning electron microscopy. Temperatures of maxima of the thermal expansion and sound attenuation coefficients related to the lattice strain and electronic transitions have been determined. The variation in the energy of activation of carriers near the percolation concentration caused by a change in the thulium valence has been revealed. The type of majority carriers has been established from the thermopower data. The temperature range of the anomalous compressibility associated with delocalization of electrons has been found from the temperature dependence of the thermal expansion coefficient. Jahn‒Teller polarons have been found above the percolation concentration using the infrared spectroscopy data.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Drokin N. A., Kiiko V. S., Malkin A. I., Pavlov A. V.
Заглавие : Electrophysical properties of BeO + 30 wt.% TiO2 ceramics sintered at elevated temperatures
Место публикации : Refract. Ind. Ceram. - 2022. - Vol. 63, Is. 3. - P.315-320. - ISSN 1083-4877 (ISSN), DOI 10.1007/s11148-022-00728-3. - ISSN 1573-9139 (eISSN)
Примечания : Cited References: 11
Аннотация: The electrophysical properties of BeO-based ceramics with introduced micro- and nanoparticles of TiO2 were investigated by impedance spectroscopy in the frequency range of 100 Hz – 100 MHz. In order to increase the density and conductivity, the initial ceramic components were sintered at the highest possible temperatures up to 1660°C, followed by annealing in hydrogen at 800°C. In this case, TiO2 was strongly reduced with the formation of lower titanium oxides (Ti3O5) along with metallic titanium. When interacting with hydrogen, TiH2 is formed. For the first time, impurity phases were found in (BeO + TiO2) ceramics, which can significantly alter its bulk and surface properties. The resulting ceramics has a high reach-through conductivity, which increases significantly after an additional thermal annealing in hydrogen. It was established that the activation energy of conductivity does not depend much on the concentration of TiO2 nanoparticles and decreases significantly in the low-temperature region. The method of constructing equivalent electrical circuits was used to simulate the passage of the active and reactive components of the current through the complex internal structure of the ceramics.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Чжан А. В., Дрокин, Николай Александрович, Ничкова Н. М., Мороз Ж. М.
Заглавие : Особенности спектральных характеристик электрического импеданса увлажненных зерен пшеницы
Место публикации : Усп. совр. естествознания. - 2022. - № 5. - С. 34-38. - ISSN 1681-7494, DOI 10.17513/use.37821; Adv. curr. nat. sci.
Примечания : Библиогр.: 9
Аннотация: Целью работы является определение особенностей спектральных характеристик электрического импеданса зерен пшеницы. Исследованы электрофизические свойства цельных спрессованных, а также размолотых образцов зёрен пшеницы с различной влажностью в диапазоне частот от 1 Гц до 100 МГц. Исходная партия зерен предварительно высушивалась в нагревательном шкафу при температуре 60 °С и затем насыщалась влагой в паровой бане при той же температуре. Влажность оценивалась по разнице веса между исходным и подвергнутым воздействию образцами (сушке или увлажнению). Исследовались образцы двух типов, отличающихся способом подготовки и структурой. Образцы первого типа состояли из цельных зерен, которые помещались в пресс-форму и подвергались всестороннему сжатию небольшим давлением, что исключало наличие воздушных промежутков между зернами. В образцах второго типа зерна предварительно размалывались в ступе и затем в виде порошка помещались в измерительную ячейку. Измерительная ячейка с образцом при комнатной температуре подключалась к анализаторам спектров Elins 1500J и Agilent E5061B, которые позволяют получать частотные зависимости импеданса и фазы. Согласно полученным данным, область низких частот (до 10 кГц) характеризуется преобладающим влиянием активной составляющей полного сопротивления, в то время как выше этой частоты преобладает реактивная часть. Выявлены процессы накопления электрических зарядов у поверхности металлических электродов, которые экранируют внешнее электрическое поле и приводят к аномальному увеличению диэлектрической проницаемости и тангенса угла потерь в области низких частот. Полученные спектры сопоставлялись со спектрами наиболее подходящих эквивалентных электрических схем, радиотехнические компоненты которых помогают понять основные механизмы прохождения переменного электрического тока через неоднородную структуру зерна.The aim of this work is to determine the features of the spectral characteristics of the electrical impedance of wheat grains. The electrophysical properties of whole pressed and ground samples of wheat grains with different moisture content in the frequency range from 1 Hz to 100 MHz have been studied. The initial batch of grains was preliminarily dried in a heating cabinet at a temperature of 60°C and then saturated with moisture in a steam bath at the same temperature. Moisture was estimated from the difference in weight between the original and exposed samples (drying or wetting). Samples of two types were studied, differing in the method of preparation and structure. Samples of the first type consisted of whole grains, which were placed in a mold and subjected to all-round compression by a small pressure, which excluded the presence of air gaps between the grains. In samples of the second type, the grains were preliminarily ground in a mortar and then placed in the form of a powder into a measuring cell. The measuring cell with the sample at room temperature was connected to the Elins 1500J and Agilent E5061B spectrum analyzers, which make it possible to obtain the frequency dependences of the impedance and phase. According to the data obtained, the low-frequency region (up to 10 kHz) is characterized by the predominant influence of the active component of the impedance, while above this frequency, the reactive part predominates. The processes of accumulation of electric charges near the surface of metal electrodes, which shield the external electric field and lead to an anomalous increase in the permittivity and loss tangent in the low-frequency region are revealed. The obtained spectra were compared with the spectra of the most suitable equivalent electrical circuits, the radio engineering components of which help to understand the main mechanisms of the passage of an alternating electric current through a heterogeneous grain structure.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Фадеева Н. П., Сайкова С. В., Пикурова Е. В., Воронин А. С., Фадеев Ю. В., Самойло А. С., Тамбасов, Игорь Анатольевич
Заглавие : Новый метод получения прозрачных проводящих пленок оксида индия (III) и оксида индия-олова
Место публикации : Журн. СФУ. Химия. - 2021. - Т. 14, № 1. - С. 45-58. - ISSN 1998-2836, DOI 10.17516/1998-2836-0215; J. Sib. Fed. Univ. Chem. - ISSN 2313-6049(eISSN)
Примечания : Библиогр.: 36. - Работа выполнена при поддержке РФФИ (грант № 18-33-00504) и стипендии Президента Российской Федерации (СП-2235.2019.1). В работе использованы приборы ЦКП СФУ и Красноярского регионального центра коллективного пользования ФИЦ КНЦ СО РАН
Предметные рубрики: ITO THIN-FILMS
ELECTRICAL-PROPERTIES
DEPOSITION
Аннотация: В работе получены седиментационно устойчивые золи гидроксидов индия (III) и олова (IV) методом анионообменного синтеза, заключающимся в обменной реакции между ОН‑ионами анионообменной смолы и анионами металлосодержащих растворов. Синтезированные гидрозоли использованы для получения проводящих пленок оксида индия (III) In2O3 и оксида индия, легированного оловом In2O3:Sn, с поверхностным сопротивлением 4 кОм/кв, толщинами 200–500 нм и прозрачностью более 85 %. Подобраны режимы нанесения прекурсоров на стеклянные подложки модифицированным спрей-методом и методом центрифугирования. Пленки исследованы с помощью РФА, СЭМ, оптической микроскопии и спектрофотометрии.In the work, sedimentation-stable sols of indium (III) and tin (IV) hydroxides were obtained by the Anion Resin Exchange Precipitation, which consists of the exchange reaction between the OH ions of the anion exchange resin and the anions of metal-containing solutions. The synthesized hydrosols were used to obtain conducting films of indium (III) In2O3 oxide and indium oxide doped with Tin In2O3: Sn, with a surface resistance of 4 kOhm/sq, thicknesses of 200-500 urn and a transparency of more than 85 %. The modes of applying precursors to glass substrates by the modified spray method and centrifugation method are selected. Films were studied using XRD, SEM, optical microscopy and spectrophotometry.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Pavlov A. V., Kveglis L. I., Saprykin D. N., Nasibullin R. T., Kalitova A. A., Velikanov D. A., Nemtsev I. V., Kantai N.
Заглавие : Emergence of ferromagnetism in nanoparticles of BeTiO3 ceramic with the perovskite structure
Место публикации : Inorg. Mater.: Appl. Res. - 2021. - Vol. 12, Is. 1. - P.88-93. - ISSN 20751133 (ISSN), DOI 10.1134/S2075113321010330
Примечания : Cited References: 21. - The part of the work involving calculations was supported by the Russian Science Foundation (grant no. 18-19-00268)
Аннотация: Emergence of ferromagnetism and an increase in the electrical conductance of BeTiO3 beryllium ceramic with the perovskite structure were discovered experimentally. To explain the reason for appearance of the metallic properties, models are proposed, and calculations of the electronic structure of nanoclusters with different short-range order are performed.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Udod L. V., Sitnikov M. N., Romanova O. B.
Заглавие : Dielectric and transport properties, electric polarization at the sequential structural phase transitions in iron-substituted bismuth pyrostannate
Место публикации : Ceram. Int. - 2021. - Vol. 47, Is. 2. - P.1704-1711. - ISSN 02728842 (ISSN), DOI 10.1016/j.ceramint.2020.08.287
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research project № 20-52-00005 Bel_a
Аннотация: The electrical characteristics including the electrical resistance, impedance, I–V characteristics, capacitance, dissipation factor, and thermoelectric power of the Bi2Sn2-хFeхO7 (х = 0.1, 0.2) stannates have been investigated in the temperature range of 100–600 K at frequencies of 102–106 Hz. The paramagnetic contribution of electrons to the dynamic magnetic susceptibility has been established. The conductivity mechanism of the compounds has been found from the I–V characteristics and the change in the carrier sign has been determined from the thermoelectric power. The hysteresis of the I–V curves, charge transfer currents and polarization current have been observed in the Bi2Sn1·8Fe0·2O7 compound. A nonlinear field dependence of the polarization in the orthorhombic phase has been found. The correlation between the obtained characteristics and the phase structure transitions has been established. Two relaxation channels and activation energy have been found using the Debye model. The hysteretic I–V characteristics have been explained using a model of the electronic structure and the dipole and migration polarization.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Pazniak H., Stevens M., Dahlqvist M., Zingsem B., Kibkalo L., Felek M., Varnakov S. N., Farle M., Rosen J., Wiedwald U.
Заглавие : Phase stability of nanolaminated epitaxial (Cr1-xFex)2AlC MAX phase thin films on MgO(111) and Al2O3(0001) for use as conductive coatings
Место публикации : ACS Appl. Nano Mat. - 2021. - Vol. 4, Is. 12. - P.13761-13770. - ISSN 25740970 (ISSN), DOI 10.1021/acsanm.1c03166
Примечания : Cited References: 51. - This work has been supported by the Deutsche Forschungsgemeinschaft (DFG) within CRC/TRR 270, project B02 (Project-ID 405553726). The calculations were carried out using supercomputer resources provided by the Swedish National Infrastructure for Computing (SNIC) at the National Supercomputer Centre (NSC) and the High Performance Computing Center North (HPC2N) partially funded by the Swedish Research Council through grant agreement no. 2018-05973. J.R. acknowledges funding from the Knut and Alice Wallenberg Foundation. Support by the Interdisciplinary Center for Analytics on the Nanoscale (ICAN) of the University of Duisburg-Essen (DFG RIsources reference: RI_00313), a DFG-funded core facility (Project nos. 233512597 and 324659309), is gratefully acknowledged. M.F. acknowledges co-funding by the government of the Russian Federation (agreement no. 075-15-2019-1886)
Аннотация: In this study, we model the chemical stability in the (Cr1-xFex)2AlC MAX phase system using density functional theory, predicting its phase stability for 0 ‹ x ‹ 0.2. Following the calculations, we have successfully synthesized nanolaminated (Cr1-xFex)2AlC MAX phase thin films with target Fe contents of x = 0.1 and x = 0.2 by pulsed laser deposition using elemental targets on MgO(111) and Al2O3(0001) substrates at 600 °C. Structural investigations by X-ray diffraction and transmission electron microscopy reveal MAX phase epitaxial films on both substrates with a coexisting (Fe,Cr)5Al8 intermetallic secondary phase. Experiments suggest an actual maximum Fe solubility of 3.4 at %, corresponding to (Cr0.932Fe0.068)2AlC, which is the highest Fe doping level achieved so far in volume materials and thin films. Residual Fe is continuously distributed in the (Fe,Cr)5Al8 intermetallic secondary phase. The incorporation of Fe results in the slight reduction of the c lattice parameter, while the a lattice parameter remains unchanged. The nanolaminated (Cr0.932Fe0.068)2AlC thin films show a metallic behavior and can serve as promising candidates for highly conductive coatings.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Kretinin V. V., Aplesnin S. S., Sitnikov M. N., Udod L. V., Yanushkevich K. I.
Заглавие : Electrical properties of the polycrystalline BiFe0.95Co0.05O3 films
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarusian Republican Foundation for Basic Research [20-52-00005]
Место публикации : Phys. Solid State. - 2021. - Vol. 63. Is. 6. - P.897-903. - ISSN 1063-7834, DOI 10.1134/S1063783421060184. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 34. - This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005
Предметные рубрики: BiFeO3 THIN-FILMS
PHASE-SEPARATION
CRYSTAL
MODEL
Аннотация: Semiconductor BiFe0.95Co0.05O3 thin-film compounds have been synthesized by a burst technique. The film surface morphology and the effect of electronic doping via substitution of cobalt ions for trivalent iron on the optical, magnetic, and kinetic properties have been investigated in the temperature range of 77-600 K in magnetic fields of up to 12 kOe. Two electron relaxation channels have been found in the impedance spectrum in the frequency range of 0.1-1000 kHz. The negative magnetoresistance in the anomalous magnetization region and the maximum magnetoimpedance in the vicinity of the surface phase transition have been established. Using the Hall measurements, carrier types dominating in the magnetoresistance and magnetoimpedance effects have been determined. The magnetization anomalies have been explained in the model of superparamagnetic clusters and the magnetoresistance, by the carrier scattering by spin fluctuations.
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18.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Udod L. V., Aplesnin S. S., Sitnikov M. N., Romanova O. B., Galyas A. I.
Заглавие : Magneto-electrical properties of iron-substituted bismuth pyrostannate Bi2(Sn0.8Fe0.2)2O7
Коллективы : "Actual problems of solid state physics" , International scientific conference, Научно-практический центр по материаловедению НАН Беларуси
Место публикации : IX International scientific conference “Actual problems of solid state physics": Book of abstracts/ int. sci. com. S. S. Aplesnin [et al]. - Minsk, 2021. - P.175
Примечания : The reported study was funded by Russian Foundation for Basic Research project № 20-52-00005 Bel_a
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Markevich I. A., Selyutin G. E., Drokin N. A., Selyutin A. G.
Заглавие : Electrical and mechanical properties of the high-permittivity ultra-high-molecular-weight polyethylene-based composite modified by carbon nanotubes
Место публикации : Tech. Phys. - 2020. - Vol. 65, Is. 7. - P.1106-1113. - ISSN 10637842 (ISSN), DOI 10.1134/S1063784220070129
Примечания : Cited References: 39
Аннотация: A composite based on ultra-high-molecular-weight polyethylene (UHMWPE) added with 1 wt % of multiwalled carbon nanotubes (MWCNTs) with a high permittivity (ε = 4.5) and a low dielectric loss (tanδ = 10–2) in the frequency range from 100 Hz to 100 MHz has been synthesized, and its main mechanical characteristics have been studied. The material has a low (22 MPa) breaking strength, a high (700%) tensile elongation, and an abrasion resistance higher than that of pure UHMWPE by 37%. It is shown using the X-ray diffraction and differential scanning calorimetry data that the changes in the mechanical properties of the composite are related to the changes in the polymer matrix structure under the action of the high-intensity ultrasonic radiation used for embedding MWCNTs into the polymer.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
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