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1.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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2.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Ovchinnikov S. G., Bartolomé J., Rubin J., Badia L., Bondarenko G. V.
Заглавие : CEMS analysis of phase formation in nanostructured films (Fe/Si) 3
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Solid State Phenomena. - 2011. - Vol. 168-169. - P.277-280. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.168-169.277
Ключевые слова (''Своб.индексиров.''): interfaces metal/semiconductor--magnetic silicides--molecular beam epitaxy technology--semiconductor and magnetic geterostructures
Аннотация: Determination of stable phases formed at the Fe/Si interface in (Fe/Si)n structure, grown by thermal evaporation in an ultrahigh vacuum system was performed using conversion electron Mossbauer spectroscopy (CEMS).
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3.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Yakovlev I. A., Volochaev M. N., Kuzubov A. A., Zamkova N. G., Kosyrev N. N., Velikanov D. A., Shemukhin A. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Examination of structure, optical and magnetic properties of epitaxial Fe1–xSix/Si(111) alloy films
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.O10.20. - P.464. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 1. - The work was supported by State contract No. 02.G25.31.0043, State task No.16.663.2014К, the Complex program of SB RAS № II.2P, project 0358-2015-0007
Ключевые слова (''Своб.индексиров.''): epitaxy--iron silicides--optical and magnetic properties--structure, defects
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4.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Yakovlev I. A., Molokeev M. S., Rautskii M. V., Nemtsev I. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Growth of α-FeSi2 nanocrystals on si(100) with Au catalyst
Место публикации : Mater. Lett.: Elsevier, 2016. - Vol. 168. - P.90-94. - ISSN 0167577X (ISSN), DOI 10.1016/j.matlet.2016.01.033
Примечания : Cited References: 25. - The work was supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 2886.2014.2), The Russian Foundation for Basic Research (RFBR) (Grants no. 13-02-01265), State Contract no. 02.G25.31.0043 and State Task no. 16.663.2014К).
Предметные рубрики: EPITAXIAL-GROWTH
LOW-TEMPERATURE
FeSi2
NANOWIRES
Si(111)
FILMS
Si
Ключевые слова (''Своб.индексиров.''): nanomaterials--molecular beam epitaxy--α-fesi2--electrode
Аннотация: Self-organized α-FeSi2 nanocrystals on (100) silicon substrate were synthesized by molecular beam epitaxy with Au catalyst. The microstructure and basic orientation relationship between the silicide nanocrystals and silicon substrate were analyzed in detail. α-FeSi2 nanocrystals appeared to be inclined trapezoid and rectangular nanoplates, polyhedral nanobars and pyramid-like ones, aligned along 011 directions on (100) silicon substrate with the length up to 1.5 μm, width ranging between 80 and 500 nm and thickness from 30 to 170 nm. As has been proposed metallic iron silicide may be used for manufacturing electric contacts on silicon. A current-voltage characteristic of the structure was measured at room temperature and showed good linearity.
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5.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Zaitsev A. I., Aleksandrovsky A. S., Pokrovsky L., Atuchin V. V., Kokh K. A.
Заглавие : Growth, optical and microstructural properties of PbB4O7 plate crystals
Коллективы : International Conference on Crystal Growth and Epitaxy (17; 2013 ; Aug. ; 11-16; Warsaw, Poland)
Место публикации : 17th Int. Conf. on Crystal Growth and Epitaxy (ICCGE-17): Book of Abstracts. - 2013. - P.452
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6.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Zaitsev A. I., Aleksandrovsky A. S., Pokrovsky L., Atuchin V. V., Kokh K. A.
Заглавие : Growth, optical and microstructural properties of PbB4O7 plate csystals : Poster
Коллективы : International Conference on Crystal Growth and Epitaxy (17; 2013 ; Aug. ; 11-16; Warsaw, Poland)
Место публикации : 17th Int. conf. on crystal growth and epitaxy (ICCGE-17): Book of abstracts. - 2013. - P.452-453
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7.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Yakovlev I.A., Varnakov S.N., Ovchinyikov S.G.
Заглавие : Investigation of Fe structure formation on Si (100) molecular-beam epitaxy and solid-phase epitaxy
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Proceedings Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2011)/ Asian School-Conference on Physics and Technology of Nanostructured Materials (2011 ; Aug. ; 22-29 ; Vladivostok, Russia), Азиатская школа-конференция по физике и технологии наноструктурированных материалов (1 ; 2011 ; авг. ; 21-28 ; Владивосток). - 2011
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8.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Varnakov S. N., Yakovlev I. A., Lyashchenko S. A., Tarasov I. A., Molokeev M. S., Belyaev B. A., Zharkov S. M., Ovchinnikov S. G., Bartolomé J., Badía-Romano L., Rubín J.
Заглавие : MBE of iron silicide heterostructures for spintronics
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.I4.3. - P.213. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 4. - The work was supported by The Complex program of SB RAS № II.2P, project 0358-2015-0003, the Ministry of Education and Science of the RF (State task
Ключевые слова (''Своб.индексиров.''): molecular beam epitaxy--iron silicides--spintronic devices
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9.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : KONONOV V. P., OVCHINNIKOV S. G., VASILYEVA E. P., ZABLUDA V. N., POPEL V. M., EDELMAN I. S., KHUDYAKOV A. E., BLECHER B. E., PARSHIN A. S., STAROVEROVA I. V.
Заглавие : Molecular-beam epitaxy of Fe/Cu multilayered films and its magnetooptical properties
Коллективы : International Conference on the Physics of Transition Metals
Место публикации : Int. J. Mod. Phys. B. - 1993. - Vol. 7, Is. 1-3. - P.466-469. - ISSN 0217-9792, DOI 10.1142/S0217979293000974
Примечания : Cited References: 2
Аннотация: Multilayered structures of 10 Fe layers (25 angstrom each) and 9 layers of Cu (50 angstrom) have been obtained by MBE technique using a 3-chambers MBE installation ''Angara''. For comparison Fe film with the thickness d = 250 angstrom have been prepared. The chemical composition and structure of the films were controlled by X-ray fluorescent analysis, Auger spectroscopy and electron microscopy measurements. Field dependencies of the magnetooptical Faraday effect were measured at different geometries. Spectral dependence of the Faraday effect revealed a maximum at 700 rum wavelength for this multilayered structure.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Zaitsev A. I., Cherepakhin A. V., Radionov N. V., Zamkov A. V.
Заглавие : Morphology of a polar twin structure in Czochralski grown α-SrB4O7 crystals
Коллективы : International Conference on Crystal Growth and Epitaxy (17; 2013 ; Aug. ; 11-16; Warsaw, Poland)
Место публикации : 17th Int. Conf. on Crystal Growth and Epitaxy (ICCGE-17): Book of Abstracts. - 2013. - P.444-445
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