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Вид документа : Статья из журнала Шифр издания :
Автор(ы) : Tarasov A. S., Luk'yanenko A. V., Bondarev I. A., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Spin accumulation in the Fe3Si/n-Si epitaxial structure and related electric bias effect
Коллективы :
Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk krai; Krasnoyarsk Territorial Foundation [18-42-243022]; Grant of the Government of the Russian Federation for Creation of World Level Laboratories [075-15-2019-1886]
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 7. - P.665-668. - ISSN 1063-7850, DOI 10.1134/S1063785020070135. - ISSN 1090-6533(eISSN) Примечания : Cited References: 17. - This study was supported by the Russian Foundation for Basic Research, the Government of Krasnoyarsk krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities (project no. 18-42-243022), and a Grant of the Government of the Russian Federation for Creation of World Level Laboratories (agreement no. 075-15-2019-1886)
Предметные рубрики: TRANSPORT Аннотация: The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.
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