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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Turpanov I. A., Patrin K. G., Alekseichik E. A., Kobyakov A. V., Yushkov V. I.
Заглавие : Magnetic and electrical properties of Co/Ge bilayer films
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: S. G. Ovchinnikov, A. Samardak: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.348-351. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.348. - ISSN 1662-9779
Примечания : Cited References: 8
Ключевые слова (''Своб.индексиров.''): bilayer structure ferromagnetic metal/semiconductor--cobalt--coercivity--germanium interface--magnetization--magnetoresistance--schottky barrier
Аннотация: The magnetic and electrical properties of Co/Ge bilayer films are experimentally studied. It is established that at the Co/Ge interface an intermediate magnetic layer forms. This layer affects the magnetic behavior and magnetoresistive effect in the investigated structures. © (2014) Trans Tech Publications, Switzerland.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Turpanov I. A., Patrin K. G., Marushchenko E. A., Kobyakov A. V., Maltsev V. K., Yushkov V. I.
Заглавие : Magnetic and magnetoresistance properties of (Co/Ge)n films
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: N. Perov, A. Semisalova: Trans Tech Publications Ltd, 2015. - Vol. 233-234: Achievements in Magnetism. - P.423-426. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.233-234.423. - ISSN 978-3-03835-482-6
Предметные рубрики: Achievements in magnetism
Spintronics and magnetotransport
Ключевые слова (''Своб.индексиров.''): bilayer structure magnetization--cobalt--coercivity--ferromagnetic metal/semiconductor films--germanium interface--magnetoresistance--schottky barrier
Аннотация: The magnetic and electrical properties of (Co/Ge)nfilms are experimentally studied. It is established that at the Co/Ge interfacean intermediate magnetic layer forms. Twophases of cobalt, one is a face-centered cubic phase and the other ispresumably a Co–Ge alloy with a weakly ferromagnetic order, have been found toexist. A “dead” layer no more than 2 nm in thickness is formed at the interface.This layer affects the magnetic behavior andmagnetoresistive effect in the investigated structures.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zharkov S. M., Kveglis L. I.
Заглавие : Electron-beam-initiated crystallization of iron-carbon films
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2004. - Vol. 46, Is. 5. - P969-974. - ISSN 1063-7834, DOI 10.1134/1.1744977
Примечания : Cited References: 34
Предметные рубрики: AMORPHOUS-GERMANIUM FILMS
EXPLOSIVE CRYSTALLIZATION
PATTERN-FORMATION
TEMPERATURE
MICROSCOPY
MECHANISM
Аннотация: A structure formed in nanocrystalline iron-carbon films exposed to an electron beam was studied. Explosive crystallization (EC) with the formation of dendrite and cellular-dendritic instabilities at a rate of up to 1 cm/s was observed. It was shown that the dependence between the growth rate of dendrite branches (or cells) during EC and the rounding radius of dendrite branch tips can be approximately described by equations used to calculate the crystal growth in supercooled melts. To explain the EC mechanism, a model of a liquid zone formed at the crystallization front was used. It was shown that the liquid zone arises due to energy accumulated in the film in the nanocrystalline state. It was assumed that this energy was accumulated due to the energy of elastic stresses. (C) 2004 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Anistratov A. T., Vorobev A. V., Grekhov Y. N., Malyshevskii N. G.
Заглавие : Dark conductivity and photoconductivity of germanium-sillenite crystals doped with aluminum and boron
Место публикации : Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 6. - P.1865-1867. - ISSN 0367-3294
Примечания : Cited References: 6
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernichenko A. V., Edelman I. S., Velikanov D. A., Marushchenko D. A., Turpanov I. A., Patrin G. S., Greben'kova Yu. E.
Заглавие : Peculiarities of magnetic properties of Ni-Ge layered films
Место публикации : TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - С. 261-264. - ISSN 10120394 (ISSN); 9783037850213 (ISBN), DOI 10.4028/www.scientific.net/SSP.168-169.261
Ключевые слова (''Своб.индексиров.''): exchange bias effect--magnetic properties--ni and ge mutual diffusion--ni-ge layer structures--surface morphology--antiferromagnetism--diffusion--germanium--magnetic properties--magnetization--morphology--phase interfaces--solids--germanium--magnetic properties--magnetization--nickel--surface morphology--temperature distribution--antiferromagnetic phase--exchange bias effects--ge films--layered films--low temperatures--magnetization temperature--mutual diffusion--ni and ge mutual diffusion--ni-ge layer structures--ge layers--surface morphology--magnetism
Аннотация: The surface morphology and magnetic properties of layered Ni-Ge films were investigated. The films surface has been shown to consist of the grains of 2 - 4 nm in height with the average radius of about 40-80 nm. Magnetization temperature dependences are different for FC and ZFC processes; in the latter case, the magnetization maximum is observed near the temperature T m?50K. The exchange bias effect is observed at low temperatures. The results are explained by the formation of the antiferromagnetic phase in the interface between Ni and Ge layers due to the Ge and Ni mutual diffusion.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhou Z. -X., Ye M. -J., Yu M. -W., Yang J. -H., Su K. -L., Yang C. -C., Lin C. -Y., Babicheva V. E., Timofeev I. V., Chen K. -P.
Заглавие : Germanium metasurfaces with lattice Kerker effect in near-infrared photodetectors
Место публикации : ACS Nano. - 2022. - Vol. 16. Is. 4. - P.5994-6001. - ISSN 19360851 (ISSN), DOI 10.1021/acsnano.1c11326
Примечания : Cited References: 51. - We are grateful to Prof. Chun-Ting Lin and Prof. Chien-Chung Lin for helpful discussions. This work was supported by the Higher Education Sprout Project of the National Yang Ming Chiao Tung University and Ministry of Education and the Ministry of Science and Technology (MOST-111-2923-E-A49-001-MY3; 108-2923-E-009-003-MY3; 110-2224-E-009-002; 109-2628-E-009-007-MY3; 110-2221-E-A49-019-MY3). This research was also funded by the Russian Science Foundation (project no. 22-42-08003)
Аннотация: In O-and C-band optical communications, Ge is a promising material for detecting optical signals that are encoded into electrical signals. Herein, we study 2D periodic Ge metasurfaces that support optically induced electric dipole and magnetic dipole lattice resonances. By overlapping Mie resonances and electric dipole lattice resonances, we realize the resonant lattice Kerker effect and achieve narrowband absorption. This effect was applied to the photodetector demonstrated in this study. The absorptance of the Ge nanoantenna arrays increased 6-fold compared to that of the unpatterned Ge films. In addition, the photocurrent in such Ge metasurface photodetectors increases by approximately 5 times compared with that in plane Ge film photodetectors by the interaction of these strong near-fields with semiconductors and the further transformation of the optical energy into electricity.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Patrin G. S., Yushkov V. I., Shiyan Ya. G., Rudenko R. Yu., Kosyrev N. N., Zharkov S. M.
Заглавие : Magnetic resonance properties of low-dimensional cobalt – Al2O3-germanium tunnel contacts
Место публикации : Magn. Reson. Solids. - 2022. - Vol. 24, Is. 2. - Ст.22201. - ISSN 20725981 (ISSN), DOI 10.26907/mrsej-22201
Примечания : Cited References: 12. - The work was carried out in the process of fulfilling the state task of the Ministry of Science and Higher Education of the Russian Federation No. FSRZ-2020-0011 "Synthesis and physical foundations of nanoscale film and granular composite materials for spintronics devices"
Аннотация: The magnetic resonance properties of a low-dimensional cobalt-Al2O3-germanium tunnel contact are studied in this work. The appearance of minima observed at low temperatures on both sides of the cobalt layer was found on the thermomagnetic curve. The value of the temperature minimum differs in magnitude on both sides of the cobalt layer. The position of the minimum in the temperature dependence of magnetization depends on the sample preparation technology. As a result of layer growth, at least two magnetic phases appear. One contribution is from the spins of ferromagnetic particles (cobalt particles with a hexagonal close packed lattice), and additional contributions from the magnetically disordered phase of fine cobalt particles and Co-Al2O3 compounds.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kobyakov A. V., Patrin G. S., Yushkov V. I., Shiyan Ya. G., Rudenko R. Yu., Kosyrev N. N.
Заглавие : Magnetic resonance properties of low-dimensional cobalt-Al2O3-germanium tunnel contact
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect.: Spintronics and magnetic nanostructures. - Ст.A.P1. - P.97-98. - ISBN 978-5-94469-051-7
Примечания : Cited References: 4. - The work was carried out in the process of fulflling the state task of the Ministry of Science and Higher Education of the Russian Federation No. FSRZ-2020-0011 “Synthesis and physical foundations of nanoscale film and granular composite materials for spintronics devices”
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