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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Varnakov S. N., Komogortsev S. V., Ovchinnikov S. G., Bartolome J., Sese J.
Заглавие : Formation of nonmagnetic phases in Fe/Si interface
Коллективы : "Trends in Nanomechanics and Nanoengineering", workshop, Сибирский федеральный университет, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : Workshop "Trends in Nanomechanics and Nanoengineering" : book of abstracts/ предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P.21
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Loiko V. A., Zyryanov V. Ya., Konkolovich A. V., Miskevich A. A., Prishchepa O. O., Shabanov A. V., Krakhalev M. N.
Заглавие : Spectral dependences of transmittance and polarizing ability of stretched PDLC films with homogeneous and inhomogeneous interface anchoring
Коллективы : EuroDisplay international conference, Society for Information Displays, Белорусский государственный университет информатики и радиоэлектроники
Место публикации : EuroDisplay 2019: book of abstracts of International conference. - 2019. - Ст.O-9. - P.25
Примечания : Cited References: 2
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Yakovlev I. A., Volochaev M. N.
Заглавие : Magnetoimpedance Effect in a SOI-Based Structure
Место публикации : Semiconductors. - 2019. - Vol. 53, Is. 14. - P.98-100. - ISSN 1063-7826 (ISSN), DOI 10.1134/S1063782619140215. - ISSN 1090-6479 (eISSN)
Примечания : Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”.
Предметные рубрики: NANOSTRUCTURE DEVICES
Аннотация: This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Rudakova N. V., Timofeev I. V., Bikbaev R. G., Pyatnov M. V., Vetrov S. Ya., Lee W.
Заглавие : Chiral optical Tamm states at the interface between an all-dielectric polarization-preserving anisotropic mirror and a cholesteric liquid crystal
Место публикации : Crystals. - 2019. - Vol. 9, Is. 10. - Ст.502. - ISSN 20734352 (ISSN), DOI 10.3390/cryst9100502
Примечания : Cited References: 48. - Russian Foundation for Basic Research (RFBR), Russia, grant No. 19-52-52006; Ministry of Science and Technology, Taiwan (MOST), grant No. 106-2923-M-009-002-MY3; M.V.P. thanks RFBR and KRSTSF for the research Project No. 18-42-243025.
Аннотация: As a new localized state of light, the chiral optical Tamm state exists at the interface between a polarization-retaining anisotropic mirror and a substance with optical activity. Considering a hybrid structure comprising a metal-free polarization-preserving mirror and a cholesteric liquid crystal, we highlight the high Q factor arising from the all-dielectric framework. The intensity of localized light decreases exponentially with increasing distance from the interface. The penetration of the field into the cholesteric liquid crystal is essentially prohibited for wavelengths lying in the photonic bandgap and close to the cholesteric pitch length. The dielectric mirror has its own photonic bandgap. The energy transfer along the interface can be effectively switched off by setting the tangential wave vector to zero. The spectral behavior of the chiral optical Tamm state is observed both as reflection and transmission resonance. This Fano resonance is analogous to the Kopp-Genack effect. Our analytics are well in line with precise calculations, which may pave a new route for the future development of intelligent design for laser and sensing applications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Averyanov D. V., Tokmachev, Andrey M., Parfenov, Oleg E., Karateev, Igor A., Sokolov I. S., Taldenkov, Alexander N., Platunov M. S., Wilhelm, Fabrice, Rogalev, Andrei, Storchak V. G.
Заглавие : Probing proximity effects in the ferromagnetic semiconductor EuO
Коллективы : NRC "Kurchatov Institute"; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-07-00249]; Russian Science FoundationRussian Science Foundation (RSF) [19-19-00009]
Место публикации : Appl. Surf. Sci. - 2019. - Vol. 488. - P.107-114. - ISSN 0169-4332, DOI 10.1016/j.apsusc.2019.05.191. - ISSN 1873-5584(eISSN)
Примечания : Cited References: 57. - This work is partially supported by NRC "Kurchatov Institute" (synthesis), the Russian Foundation for Basic Research [grant 19-07-00249] (magnetization measurements), and the Russian Science Foundation [grant 19-19-00009] (transport measurements). The measurements have been carried out using the equipment of the resource centers of electrophysical, laboratory X-ray, and electron microscopy techniques of NRC "Kurchatov Institute". The authors also gratefully acknowledge the beamtime allocation (MA-3167) by the ESRF.
Предметные рубрики: INTERFACE
FIELD
POLARIZATION
INSULATOR
SILICON
Аннотация: Ferromagnetic insulators are widely employed to induce magnetic phenomena in adjacent layers via proximity effect. This approach could make non-magnetic materials (ranging from silicon to graphene) available for spintronic applications. Eu chalcogenides, EuO in particular, are highly efficient spin generators but suffer from low Curie temperatures. Here, experiments aimed at T-C increase in EuO by its integration with the ferromagnetic metal Gd are reported. The epitaxial bilayers Gd/EuO are synthesized on different substrates and characterized by a combination of diffraction and microscopy techniques. Their magnetic structure - established with magnetization and transport measurements as well as element-selective X-ray magnetic circular dichroism study - comprises coupled magnetic orders of EuO and Gd. EuO is robust against proximity effects - its T-C is still low, increased at most by a few tens of K. Nevertheless, the results encourage further studies of proximity-enhanced ferromagnetism to extend the range of applications of ultrathin layers of EuO in spintronics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Parshin A. M., Sutormin V. S., Zyryanov V. Ya., Shabanov V. F.
Заглавие : Polar anchoring energy and tilt angle measured by magneto-optical technique in nematic doped with ionic surfactant
Место публикации : Liq. Cryst. - 2020. - Vol. 47, Is. 12. - P.1825-1831. - ISSN 0267-8292, DOI 10.1080/02678292.2020.1733683. - ISSN 1366-5855(eISSN)
Примечания : Cited References: 32
Предметные рубрики: LIQUID-CRYSTAL
TEMPERATURE-DEPENDENCE
INTERFACE
ADSORPTION
Аннотация: The surface anchoring of a nematic doped with the ionic surfactant has been investigated and compared with the one in the undoped sample. The director tilt angle at the substrates coated with the orienting polymer film has been determined by the null method in a rotating magnetic field. The Frederiks transition in a magnetic field has been chosen as a convenient technique to measure the polar anchoring energy Wθ. The temperature dependences of anchoring energy have been obtained for the various nematic cells. The Wθ values for nematic doped with the ionic surfactant are less than for the undoped one. The factors affecting the measurement accuracy have been discussed. The accuracy is higher for the thinner nematic layers and weaker anchoring energy.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Bondarev I. A., Romanenko A. I.
Заглавие : α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
Место публикации : J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P.851-861. - ISSN 1027-4510, DOI 10.1134/S1027451020040357. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70)
Предметные рубрики: β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Visotin M. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Growth of α-FeSi2 nanocrystals on silicon surface: the impact of gold and the Si/Fe flux ratio, the origin and the prediction of α/Si orientation relationships and interface structures
Коллективы : International Online Workshop on the properties of Functional MAX-materials, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : 1st FunMAX Workshop 2020: Book of Abstracts/ , Ин-т физики им. Л.В. Киренского. - 2020. - P11
Примечания : Cited References: 2. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avdeeva A. Yu., Vetrov S. Ya., Bikbaev R. G., Pyatnov M. V., Rudakova N. V., Timofeev I. V.
Заглавие : Chiral optical Tamm states at the interface between a Dye-doped cholesteric liquid crystal and an anisotropic mirror
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [19-42-240004]; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-52-52006]
Место публикации : Materials. - 2020. - Vol. 13, Is. 15. - Ст.3255. - ISSN 1996-1944(eISSN), DOI 10.3390/ma13153255
Примечания : Cited References: 44. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 19-42-240004 and by Russian Foundation for Basic Research, project No. 19-52-52006
Предметные рубрики: PHASE
POLARIZATION
MODES
Аннотация: The resonant splitting of optical Tamm state numerically is demonstrated. The Tamm state is localized at the interface between a resonant chiral medium and a polarization-preserving anisotropic mirror. The chiral medium is considered as a cholesteric liquid crystal doped with resonant dye molecules. The article shows that the splitting occurs when dye resonance frequency coincides with the frequency of the Tamm state. In this case the reflectance, transmittance, and absorptance spectra show two distinct Tamm modes. For both modes, the field localization is at the interface between the media. The external field control of configurable optical and structural parameters paves the way for use in tunable chiral microlaser.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
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