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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyakov D. A., Gustaitsev A. O., Tarasov A. S., Lukyanenko A. V., Varnakov S. N., Volkov N. V.
Заглавие : The magnetoimpedance effect in the Fe3Si/p-Si structure
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.161
Примечания : This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Gustaitsev A. O., Volkov N. V.
Заглавие : The bias-controlled magnetoimpedance effect in a MIS structure
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: N. Perov, A. Semisalova: Trans Tech Publications Ltd, 2015. - Vol. 233-234: Achievements in Magnetism. - P.451-455. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.233-234.451. - ISSN 978-3-03835-482-6
Ключевые слова (''Своб.индексиров.''): bias--magnetoimpedance--mis-structure--magnetic fields--schottky barrier diodes--temperature distribution--applied magnetic fields--bias--giant magneto impedance effect--lower temperatures--magneto-impedance--magneto-impedance effects--mis structure--temperature dependence--magnetism
Аннотация: We report the giant magnetoimpedance effect in a ferromagnetic metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/n-Si structure. It was established that the applied magnetic field strongly influences the impedance of the structure in the temperature range 10—30 K. In this range, there is the pronounced peak in the temperature dependence of the real part of the impedance at frequencies from 10 Hz to 1 MHz. The effect of the magnetic field manifests itself as a shift of the peak of the real part of the impedance. Under the action of a bias voltage of 5 V, the peak of the real part of the impedance similarly shifts toward lower temperatures with and without applied magnetic field. © (2015) Trans Tech Publications, Switzerland.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Gustaitsev A. O., Balashov V. V., Korobtsov V .V.
Заглавие : The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
Коллективы : Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
Место публикации : Appl. Phys. Lett.: American Institute of Physics, 2014. - Vol. 104, Is. 22. - Ст.222406. - ISSN 0003-6951, DOI 10.1063/1.4881715. - ISSN 1077-3118
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043.
Предметные рубрики: MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Rautskii M. V., Smolyakov D. A., Bondarev I. A., Tarasov A. S., Lukyanenko A. V., Yakovlev I. A., Masyugin A. N., Volochaev M. N., Kosyrev N. N., Volkov N. V., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Optically tunable magnetoimpedance in Fe/Al2O3/p-Si
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials: Proceedings. - VLadivostok: Dalnauka Publishing, 2020. - Ст.IV.31.11p. - P.120. - ISBN 978-5-8044-1698-1
Примечания : The work was partially supported by the Ministry of Education and Science, Fundamental research program of the Presidium of the RAS no. 32 «Nanostructures: physics, chemistry, biology, basics of technologies». The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project № 18-42-243022.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Udod L. V., Sitnikov M. N., Kretinin V. V., Yanushkevich K. I., Velikanov D. A.
Заглавие : Magnetoresistance, magnetoimpedance, magnetothermopower, and photoconductivity in silver-doped manganese sulfides
Коллективы : Russian Foundation for Basic Research [18-52-00009 Bel_a]; Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-240001 r_a]
Место публикации : J. Appl. Phys. - 2019. - Vol. 125, Is. 17. - Ст.175706. - ISSN 0021-8979, DOI 10.1063/1.5085701. - ISSN 1089-7550(eISSN)
Примечания : Cited References: 29. - This study was supported by the Russian Foundation for Basic Research (Project No. 18-52-00009 Bel_a). The reported study was funded by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science (Project No. 18-42-240001 r_a), to the research project: "Inversion of the Sign of the Components of the Magnetoelectric Tensor on the Temperature in Films of Bismuth Garnet Ferrite Replaced by Neodymium." This study was carried out in the framework of the state task No. 3.5743.2017/6.7.
Предметные рубрики: MAGNETIC-PROPERTIES
RESISTIVITY
Аннотация: New multifunction materials in the AgXMn1‒XS (Х = 0.05) system have been synthesized and investigated in the temperature range of 77‒500 K in magnetic fields up to 12 kOe. Near the temperature of the magnetic transition (ТN = 176 K), the anomalous behavior of the temperature dependence of magnetization has been observed and has been attributed to the formation of ferrons. An analysis of the infrared spectroscopy data and I‒V characteristics has revealed the spin-polaron subband splitting. Several conductivity channels have been found from the impedance spectra. The temperature and magnetic field dependences of the carrier relaxation time have been obtained. The magnetoresistance (−21%), magnetoimpedance (−65%), magnetothermopower (−40%), and photoconductivity effects have been detected. The majority carrier type, density, and mobility have been determined from the Hall-effect measurement data. The observed effects have been explained using a ferron model.Синтезированы и исследованы новые многофункциональные материалы системы AgXMn1-XS (Х=0.05) в интервале температур 77-500К в магнитных полях до 12 кЭ. В близи температуры магнитного перехода (ТN=176К) наблюдается аномальное поведение температурной зависимости намагниченности, вызванное образованием ферронов. Найдено расщепление спин-поляронной подзоны из ИК спектроскопии и вольт-амперных характеристик. Установлено несколько каналов проводимости из спектров импеданса, отличающихся частоте. Определена зависимость времени релаксации носителей заряда от температуры и магнитного поля. Обнаружено четыре эффекта: магнитосопротивление (-21%), магнитоимпеданс (-65%), магнитотермоЭДС (-40%) и фотопроводимость. Найдены: тип, концентрация и подвижность основных носителей заряда из холловских измерений. Обнаруженные эффекты объясняются в модели ферронов.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aplesnin S. S., Begisheva O. B., Sitnikov M. N., Yukhno M. Yu.
Заглавие : Magnetoresistance and magnetoimpedance in LuxMn1-xS solid solutions paramagnetic state
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст.K.O5. - P.305-306. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 2. - The reported study was funded by Russian Foundation for Basic Research No. 18-32-00079 mol_a, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science No. 18-42 240001 r_a, tothe research project: ”Inversion ofthe sign ofthe components ofthe magnetoelectrictensor onthe temperature in films of bismuth garnet ferrite replaced by neodymium”
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Sitnikov M. N., Udod L. V., Kharkov A. M.
Заглавие : Magnetoresistance and magnetoimpedance in holmium manganese sulfides
Коллективы : Russian Foundation for Fundamental InvestigationsRussian Foundation for Basic Research (RFBR) [20-42-243002]
Место публикации : Appl. Phys. A. - 2022. - Vol. 128, Is. 2. - Ст.124. - ISSN 0947-8396, DOI 10.1007/s00339-021-05198-x. - ISSN 1432-0630(eISSN)
Примечания : Cited References: 46. - Funding was provided by Russian Foundation for Fundamental Investigations (20-42-243002)
Предметные рубрики: PHASE-SEPARATION
IMPEDANCE
Аннотация: The structure, transport characteristics, real and imaginary parts of the impedance components and electric polarization of the HoXMn1-XS (X = 0.1 and 0.2) system have been investigated in the temperature range of 80-500 K in magnetic fields of up to 12 kOe. The morphology of synthesized samples has been studied. The influence of the magnetic field on the transport characteristics, on both direct and alternating currents of holmium manganese sulfides, have been established. The negative effects of DC magnetoresistance in the region of the magnetic phase transition and positive AC magnetoimpedance up to 4% in the paramagnetic region have been established. The critical temperatures of the existence of the electric polarization have been determined. At a substitution concentration of X = 0.1, the activation character of the relaxation time versus temperature has been found. The diffusion contribution for the composition with X = 0.2 has been established by the impedance hodograph.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Masyugin A. N., Kretinin V. V., Konovalov S. O., Shestakov N. P.
Заглавие : Magnetoresistance and IR spectrum of impurity states in the Ce3Fe5O12 film
Место публикации : Phys. Solid State. - 2021. - Vol. 63, Is. 2. - P.242-247. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783421020025
Примечания : Cited References: 28. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-240001 “Inversion of the Sign of Magnetoelectric Tensor Components with Temperature in the Neodymium-Doped Bismuth Iron Garnet Films”
Аннотация: In polycrystalline cerium iron garnet films, the gap in the electron excitation spectrum and electronic transitions between di- and tetravalent iron and cerium impurity ions have been established from the IR absorption spectra. The temperatures of delocalization of the ferrous states of iron have been found from the impedance spectroscopy, electrical resistance, and IR spectroscopy data. The difference between the ac and dc magnetoresistances has been established and explained using a model of a dielectrically inhomogeneous medium.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Sitnikov M. N., Kharkov A. M., Konovalov S. O., Vorotinov A. M.
Заглавие : Magnetoimpedance, Jahn-Teller transitions upon electron doping of manganese sulfide
Место публикации : J. Magn. Magn. Mater. - 2020. - Vol. 513. - Ст.167104. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2020.167104
Примечания : Cited References: 42. - This study was supported by youth project_Reshetnev Siberian State University of Science and Technology
Аннотация: The effect of a magnetic field on the electrical and magnetic properties of manganese sulfide upon electron doping in the YbxMn1−xS (0.05 ˂ x ˂ 0.2) compound has been investigated. The change in the conductivity type from the Poole–Frenkel to Mott law have been established using the I–V characteristics and the change in the carrier type upon temperature and concentration variations has been observed. The effect of the sample prehistory on the conductivity, impedance, and magnetic susceptibility under the action of a magnetic field in a wide temperature range has been found. The trivalent state of ytterbium ions has been determined using the electron paramagnetic resonance study. The dynamic JT transitions temperature are found by IR method and by the electron paramagnetic resonance. Anomalies of carrier mobility and magneto-impedance were found in the vicinity of the Jahn-Teller transitions. The experimental data are explained by the localization of electrons with the formation of the interstitial orbital momenta and an orbital momentum into the site. The sample prehistory is related to the lifting of the orbital angular moments degeneracy and the direction of the axis of distortion of the octahedrons in a magnetic field.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Smolyakov D. A., Bondarev I. A., Volkov N. V.
Заглавие : Magnetoimpedance of the Fe/SiO2/N-SiI hybrid structure under optical irradiation
Коллективы : Moscow International Symposium on Magnetism, Московский государственный университет им. М.В. Ломоносова
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2014): Book of abstracts. - 2014. - Ст.1PO-K-15. - P.548. - ISBN 978-5-91978-025-0
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Gustaitsev A. O., Smolyakov D. A., Tarasov A. S., Varnakov S. N., Volkov N. V.
Заглавие : Magnetoimpedance of Silicon-Based Hybrid Structures with a Schottky Barrier
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P1.31. - P.92. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 3
Ключевые слова (''Своб.индексиров.''): hybrid structures--schottky barrier--schottky diode--magnetoimpedance--spintronic devices
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sitnikov M. N., Aplesnin S. S., Kharkov A. M., Abdelbaki H., Zelenov F. V.
Заглавие : Magnetoimpedance in manganese sulfide substituted with lutetium
Место публикации : Phys. Solid State. - 2023. - Vol. 65, Is. 2. - P.211-217. - ISSN 10637834 (ISSN), DOI 10.21883/PSS.2023.02.55402.527. - ISSN 10906460 (eISSN)
Примечания : Cited References: 28. - This study was supported by a grant of the President of the Russian Federation No. MK-620.2021.1.2
Аннотация: The components of the impedance, the impedance of the LuxMn1–xS (x ˃ 0.2) solid solution in the temperature range of 80-500 K and the frequency of 100-106 Hz were studied. A change in the sign of the magnetoimpedance in concentration and temperature is found. The contribution of the reactive and active components to the magnetoimpedance is determined. The correlation of magnetoimpedance temperatures with the temperatures of the maximum attenuation of ultrasound and electrosound has been established. The frequency dependences of the reactive part of the impedance are described in the Cole-Cole model.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Yakovlev I. A., Volochaev M. N.
Заглавие : Magnetoimpedance Effect in a SOI-Based Structure
Место публикации : Semiconductors. - 2019. - Vol. 53, Is. 14. - P.98-100. - ISSN 1063-7826 (ISSN), DOI 10.1134/S1063782619140215. - ISSN 1090-6479 (eISSN)
Примечания : Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”.
Предметные рубрики: NANOSTRUCTURE DEVICES
Аннотация: This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Korolev V. V., Sitnikov M. N., Yanushkevich K. I.
Заглавие : Magnetoimpedance and magnetocapacitance of anion-substituted manganese chalcogenides
Место публикации : J. Appl. Phys.: American Institute of Physics, 2017. - Vol. 121, Is. 7. - Ст.075701. - ISSN 00218979 (ISSN), DOI 10.1063/1.4976097
Примечания : Cited References: 26. - The reported study was funded by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 17-42-240079 r_sibir_a. This study was supported by the Russian Foundation for Basic Research project No. 16-52-00045 Bel_a and government work No. 114090470016.
Ключевые слова (''Своб.индексиров.''): activation energy--chalcogenides--inorganic compounds--manganese--neel temperature--carrier relaxation time--impedance spectroscopy--low and high frequencies--magnetically ordered state--magneto-resistive effect--magnetocapacitance--pyroelectric current--temperature dependence--temperature distribution
Аннотация: The magnetoresistive effect in MnSe1−XTeX manganese chalcogenides with a substitute concentration of X = 0.1 is studied by impedance spectroscopy. The magnetoimpedance above the Neel temperature is found. The obtained experimental data are explained in the framework of the model of existence of magnetic nanoareas of two types. Two activation energies in the low- and high-frequency regions are determined from the frequency and temperature dependences of the permittivity described in the Debye model. The extrema found in the temperature dependence of the pyroelectric current are consistent with the maxima in the temperature dependence of magnetization. Temperature dependence of the carrier relaxation time is established. The magnetocapacitance of the MnSe1−XTeX solid solutions is found. The change in the carrier type above the Neel temperature and the temperature of the transition to the magnetically ordered state in the MnTe nanoarea is established.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures
Место публикации : J. Magn. Magn. Mater. - 2018. - Vol. 451. - P.143-158. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2017.11.008
Примечания : Cited References: 31. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects № 17-02-00302, 16-42-242036 and 16-42-243046.
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photo-magneto-electric effect--magnetoelectronics
Аннотация: Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.
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16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/insulator/semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.I4.4. - P.214. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : References: 3
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.140-143. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.092. - ISSN 1873-4766(eISSN)
Примечания : Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Предметные рубрики: SPINTRONICS
BREAKDOWN
SILICON
SPIN
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Melnikov, Grigory Yu., Vazhenina I. G., Iskhakov R. S., Boev N. M., Komogortsev S. V., Svalov, Andrey V., Kurlyandskaya, Galina V.
Заглавие : Magnetic properties of FeNi/Cu-based lithographic rectangular multilayered elements for magnetoimpedance applications
Место публикации : Sensors. - 2023. - Vol. 23, Is. 13. - Ст.6165. - ISSN 14248220 (eISSN), DOI 10.3390/s23136165
Примечания : Cited References: 72. - This research was funded by the Russian Science Foundation (RSF), project no. 22-29-00980, https://rscf.ru/project/22-29-00980/ (accessed on 1 July 2023)Authors acknowledge the possibility to use the Krasnoyarsk Regional Center of Research Equipment of the Federal Research Center “Krasnoyarsk Science Center SB RAS” for ferromagnetic resonance studies. We thank A.A. Yuvchenko and V.N. Lepalovskij for special support. The authors wish to thank the anonymous referees for their comments and suggestions
Аннотация: The rectangular elements in magnetoimpedance (MI) configuration with a specific nanocomposite laminated structure based on FeNi and Cu layers were prepared by lift-off lithographic process. The properties of such elements are controlled by their shape, the anisotropy induced during the deposition, and by effects associated with the composite structure. The characterizations of static and dynamic properties, including MI measurements, show that these elements are promising for sensor applications. We have shown that competition between the shape anisotropy and the in-plane induced anisotropy of the element material is worth taking into account in order to understand the magnetic behavior of multilayered rectangular stripes. A possibility of the dynamic methods (ferromagnetic and spin-wave resonance) to describe laminated planar elements having a non-periodic modulation of both structure and magnetic parameters of a system is demonstrated. We show that the multilayered structure, which was originally designed to prevent the development of a “transcritical” state in magnetic layers and to reach the required thickness, also induces the effects that hinder the achievement of the goal, namely an increase in the perpendicular magnetic anisotropy energy.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Yakovlev I. A., Masyugin A. N., Volochaev M. N., Bondarev I. A., Kosyrev N. N., Volkov N. V.
Заглавие : Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states
Место публикации : Thin Solid Films. - 2019. - Vol. 671. - P.18-21. - ISSN 00406090 (ISSN) , DOI 10.1016/j.tsf.2018.12.026
Примечания : Cited References: 15. - This study was supported by the Russian Foundation for Basic Research , project no. 18-32-00035 and supported in part by the Russian Foundation for Basic Research , Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243022, and the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences , project II.8.70, and the Presidium of the Russian Academy of Sciences , Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies».
Аннотация: This article presents the results of a study of the transport properties of metal/insulator/semiconductor (MIS) hybrid structures in alternating current (ac) mode. We prepared a series of samples with different layers of metal, insulator, and semiconductor. We prepared a series of samples with different layers of metal, insulator and semiconductor. Ferromagnetic Fe and non-magnetic Cu and Mn were chosen as metals, the insulators were SiO2 and Al2O3, and n- and p-type Si substrates were used as semiconductors. Temperature dependence of the real part of the impedance showed peculiar peaks below 40К for different combinations of metals, insulators and semiconductors. For all samples the effect of the magnetic field on the transport properties was studied. At low temperatures, the magnetic field shifts peaks toward higher temperatures. Metal magnetic state does not significantly affect this phenomenon. Changing the type of the insulator and its thickness also did not cause any significant effect. However, the effect was observed for samples with different composition. Moreover, the type of conductivity of the substrate, as well as the type of metal, determines the value of magnetoimpedance. The main role in the magnetoimpedance effect is played by recharge of the energy states localized at the insulator/semiconductor interface. This mechanism allows obtaining a MI effect even in “nonmagnetic” MIS structures; magnetoimpedance can be either positive or negative, depending on temperature and frequency. We suggest that the observed ac magnetotransport phenomena could be used for creating magnetic field sensors, working on new principles.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Sitnikov M. N., Kharkov A. M., Masyugin A. N., Kretinin V. V., Fisenko O. B., Gorev M. V.
Заглавие : Influence of Induced Electrical Polarization on the Magnetoresistance and Magnetoimpedance in the Spin‐Disordered TmxMn1−xS Solid Solution
Место публикации : Phys. Status Solidi B. - 2019. - Vol. 256, Is. 10. - Ст.1900043. - ISSN 03701972 (ISSN) , DOI 10.1002/pssb.201900043
Примечания : Cited References: 25
Аннотация: The transport properties of the TmxMn1–xS (x ≤ 0.15) solid solutions in the temperature range of 200–600 K have been investigated. The temperatures of lattice polaron pinning accompanied by the lattice strain, condensation of the infrared modes, and thermionic emission have been determined. The change of the carrier sign with temperature has been found from the Hall coefficient data and dragging of electrons by phonons, from the thermopower data. The dependence of the magnetoresistance on the concentration, current, and voltage has been established from the I–V characteristics measured without field and in an applied magnetic field of H = 8 kOe in the temperature range of 300–500 K. The functional temperature dependence of the carrier relaxation time has been determined using the impedance data. The concentration region with the magnetoimpedance sign varying with frequency and temperature has been found. The increase in the relaxation time of the induced electric polarization with increasing concentration of thulium ions has been observed. The experimental data have been interpreted in the framework of the Debye and Maxwell–Wagner models, as well as the theoretical model for the Rashba spin–orbit interaction.
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