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Вальков, Валерий Владимирович.
Теплоемкость и магнитосопротивление слаболегированного двумерного антиферромагнетика в неколлинеарной фазе / В. В. Вальков, А. Д. Федосеев // Изв. РАН. Сер. физич. - 2013. - Т. 77, № 3. - С. 387-389DOI 10.7868/S0367676513030381
Аннотация: Исследован энергетический спектр подвижных носителей заряда в двумерном антиферромагнетике, помещенном во внешнее магнитное поле. Показано, что учет скоса магнитных подрешеток модифицирует эффективную массу подвижных носителей заряда слаболегированного антиферромагнетика. Этот факт существенным образом сказывается на транспортных и термодинамических свойствах системы. Обнаружено явление перехода в полуметаллическую фазу под воздействием внешнего магнитного поля.

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Переводная версия Heat capacity and magnetoresistance of a lightly doped two-dimensional antiferromagnet in the noncollinear phase. - [Б. м. : б. и.]

Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Федосеев, Александр Дмитриевич; Fedoseev, A. D.; Val'kov, V. V.
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    Особенности магнетосопротивления двухслойного монокристаллического манганита La1,4Sr1,6Mn2O7 / С. Е. Никитин [и др.] // Вестник НГУ. Физика. - 2015. - Т. 10, Вып. 1. - С. 63-66. - Библиогр.: 8 . - ISSN 1818-7994
   Перевод заглавия: Features of magnetoresistance in the bilayer single crystal manganite La1.4Sr1.6Mn2O
Кл.слова (ненормированные):
манганиты лантана -- положительное магнетосопротивление -- manganite -- positive magnetoresistance
Аннотация: Представлены результаты исследования магнетосопротивления на двухслойном монокристаллическом манганите лантана La1,4Sr1,6Mn2O7 при пропускании транспортного тока вдоль оси с ( j ‖ c ) и приложении внешнего магнитного поля H ‖ j и H ⊥ j. В монокристалле La1,4Sr1,6Mn2O7 в случае, когда H ⊥ j, помимо присущего всем замещенным манганитам лантана отрицательного магнетосопротивления в температурном диапазоне T < 60 K, обнаружен эффект положительного магнетосопротивления. Механизм возникновения данного эффекта принципиально отличается от эффекта колоссального магнетосопротивления, присущего всем манганитам лантана. Мы считаем, что появление положительного магнетосопротивления вызвано спин-зависимым туннелированием носителей между марганец-кислородными бислоями, при данной конфигурации «магнитное поле - ток», и может быть объяснено особенностями магнитной структуры данных составов.
We investigate magnetoresistance of single-crystal bilayer lanthanum manganite La1.4Sr1.6Mn2O7 at a transport current flowing along the crystal c axis and in external magnetic fields applied parallel to the crystal c axis or ab plane. It is demonstrated that the La1.4Sr1.6Mn2O7 manganite exhibits the positive magnetoresistance effect in the magnetic field applied in the ab plane of the sample at the temperatures T < 60 K. The mechanism of this effect is shown to be fundamentally different from the colossal magnetoresistance effect typical of lanthanum manganites. The positive magnetoresistance originates from spin-dependent tunneling of carriers between the manganese-oxygen bilayers and can be explained by features of the magnetic structure of the investigated compounds.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Никитин, Станислав Евгеньевич; Nikitin, S. E.; Попков, Сергей Иванович; Popkov, S. I.; Петров, Михаил Иванович; Petrov, M. I.; Терентьев, Константин Юрьевич; Terent'yev, K. Yu.; Семенов, Сергей Васильевич; Semenov, S. V.; Шайхутдинов, Кирилл Александрович; Shaikhutdinov, K. A.; Сибирский молодежный семинар по высокотемпературной сверхпроводимости и физике наноструктур – ОКНО 2014 (X ; 13 - 14 ноября 2014 г. ; Новосибирск)
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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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Semenov, S. V.
Universal behavior and temperature evolution of the magnetoresistance hysteresis in granular high-temperature superconductors Y-Ba-Cu-O / S. V. Semenov, D. A. Balaev, M. I. Petrov // Phys. Solid State. - 2021. - Vol. 63, Is. 7. - P. 1069-1080, DOI 10.1134/S1063783421070192. - Cited References: 80. - The authors are grateful to D.M. Gokhfeld for discussion of the results. The measurements of the transport properties were performed in part on a PPMS-6000 system of the Center for Collective Use, Krasnoyarsk Scientific Center, Siberian Branch of the Russian Academy of Sciences . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
CRITICAL-CURRENT-DENSITY
CURRENT-VOLTAGE CHARACTERISTICS
MAGNETIC-FLUX COMPRESSION
Кл.слова (ненормированные):
granular HTS -- magnetoresistance hysteresis -- grain boundaries
Аннотация: Regularities in the behavior of the magnetoresistance hysteresis R(H) in the granular yttrium high-temperature superconductors (HTSs) have been established. For this purpose, a comparative analysis of the magnetotransport properties has been carried out on the granular HTS samples, which exhibit (i) approximately the same magnetic properties and temperatures of the onset of the superconducting transition (90.5–93.5 K, which is characteristic of HTS grains) and (ii) different critical transport currents JC (which is characteristic of grain boundaries). Despite a significant (by more than an order of magnitude) spread of the JC values for the three samples, a universal behavior of the magnetoresistance hysteresis has been found, which is apparently inherent in all the granular Y–Ba–Cu–O compounds. The R(H) hysteresis is extremely broad and, in a fairly wide external field range, the dependence of the magnetoresistance hysteresis width ΔН on the field Hdec (the external field for the decreasing hysteresis branch is Н = Hdec) is almost linear: ΔH ≈ Hdec. This behavior is observed over the entire temperature range of implementation of the superconducting state (the investigations have been carried out at temperatures of 77–88 and 4.2 K). The result obtained has been explained by considering the effective field in grain boundaries, which is a superposition of the external field and the field induced by the magnetic moments of grains. The field induced by grains, in turn, significantly increases in the region of grain boundaries due to the magnetic flux compression (the grain boundary length is shorter than the HTS grain size by several orders of magnitude). The aforesaid has been confirmed by the analysis of the R(H) hysteresis for the Y–Ba–Cu–O- and CuO-based HTS composite, in which the grain boundary length is purposefully increased; as a result, the flux compression is less pronounced and the R(H) hysteresis narrows.

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Публикация на русском языке Семенов, Сергей Васильевич. Универсальность поведения гистерезиса магнитосопротивления и его температурной эволюции для гранулярных высокотемпературных сверхпроводников Y-Ba-Cu-O [Текст] / С. В. Семенов, Д. А. Балаев, М. И. Петров // Физ. тверд. тела. - 2021. - Т. 63 Вып. 7. - С. 854-865

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Petrov, M. I.; Петров, Михаил Иванович; Семёнов, Сергей Васильевич
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Two-phase paramagnetic-ferromagnetic state of La0.7Pb0.3MnO3 single-crystal lanthanum manganite / N. V. Volkov [et al.] // Phys. Solid State. - 2002. - Vol. 44, Is. 7. - P. 1350-1354, DOI 10.1134/1.1494635. - Cited References: 17 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
COLOSSAL MAGNETORESISTANCE
   MAGNETIC-RESONANCE
   DOPED MANGANITES
   LA1-XCAXMNO3
   SEPARATION
   TRANSITION
   RELAXATION
   EPR
Аннотация: Two phases, paramagnetic and ferromagnetic, were shown by the magnetic resonance method to coexist below the temperature T-C in La0.7Pb0.3MnO3 single crystals exhibiting colossal magnetoresistance. The magnetic resonance spectra were studied in the frequency range 10-78 GHz. The specific features in the behavior of the spectral parameters were observed to be the strongest at the temperatures corresponding to the maximum magnetoresistance in the crystals. The concentration ratios of the paramagnetic and ferromagnetic phases in the samples were found to be sensitive to variations in temperature and external magnetic field. This behavior suggests realization of the electronic phase separation mechanism in the system under study. (C) 2002 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Vasil'ev, V. N.; Sablina, K. A.; Саблина, Клара Александровна
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Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure / N. V. Volkov [et al.] // Tech. Phys. Lett. - 2003. - Vol. 29, Is. 3. - P. 200-202, DOI 10.1134/1.1565633. - Cited References: 7 . - ISSN 1063-7850

РУБ Physics, Applied

Аннотация: We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T-C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film). (C) 2003 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia
Krasnoyarsk State Univ, Krasnoyarsk, Russia
ИФ СО РАН

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Patrin, G. S.; Патрин, Геннадий Семёнович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Sablina, K. A.; Саблина, Клара Александровна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S. N.; Варнаков, Сергей Николаевич
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Balaev, D. A.
Tunnel Conductivity and Tunnel Magnetoresistance of the Fe-SiO Films: Interplay of the Magnetotransport and Magnetic Properties / D. A. Balaev, A. D. Balaev // Phys. Solid State. - 2019. - Vol. 61, Is. 7. - P. 1203-1210, DOI 10.1134/S1063783419070047. - Cited References: 48 . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
GIANT MAGNETORESISTANCE
   GRANULAR FILMS
   TEMPERATURE
   TRANSPORT
Аннотация: The electrical properties of a system of nanogranular amorphous Fe–SiO films with a SiO concentration between 0 and 92 vol % have been investigated. The samples with a low SiO content are characterized by the metal-type conductivity. With an increase in the dielectric content x in the films, the concentration transition from the metal to tunneling conductivity occurs at x ≈ 0.6. At the same concentration, the ferromagnet–superparamagnet transition is observed, which was previously investigated by the magnetic method. The temperature dependences of the electrical resistivity ρ(T) for the compositions corresponding to the dielectric region obey the law ρ(T) ~ exp(2(C/kT)1/2), which is typical of the tunneling conductivity. The estimation of the metal grain sizes from the tunneling activation energy C has shown good agreement with the sizes obtained previously by analyzing the magnetic properties. In the dielectric region of the compositions, the giant magnetoresistive effect attaining 25% at low temperatures has been obtained.

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Публикация на русском языке

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Balaev, A. D.; Балаев, Александр Дмитриевич; Балаев, Дмитрий Александрович
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Kiselev, N. I.
Transverse magnetoresistance of single-crystal Ni films / N. I. Kiselev, Yu. I. Mankov, V. G. Pynko // Fiz. Tverd. Tela. - 1989. - Vol. 31, Is. 4. - P. 243-246. - Cited References: 7 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

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Доп.точки доступа:
Mankov, Yu. I.; Pynko, V. G.; Пынько, Виталий Григорьевич
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Transport properties of FeSi with cobalt impurities / G. Y. Yurkin [et al.] // TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - P493-496, DOI 10.4028/www.scientific.net/SSP.168-169.493 . - ISSN 1012-0394
Кл.слова (ненормированные):
iron monosilicide -- kondo effect -- magnetization -- resistivity -- spindependent scattering -- superparamagnetic cluster -- cobalt -- crystals -- electric resistance -- electron energy loss spectroscopy -- kondo effect -- magnetic field effects -- magnetic properties -- magnetization -- magnetoresistance -- scattering -- superparamagnetism -- transport properties -- cobalt -- electric conductivity -- electron scattering -- impurities -- kondo effect -- magnetism -- magnetization -- experimental investigations -- kondo models -- magnetoresistance properties -- resistivity -- si crystals -- spin dependent scattering -- superparamagnetic clusters -- crystal impurities -- crystal impurities
Аннотация: The results of experimental investigations of Fe1-xCo xSi crystals in the impurity limit are presented in this article. We made an attempt to study changes of magnetic properties and conductivity in mixed Fe1-xCoxSi crystals in the impurity limit. Magnetoresistance properties are well described in the framework of Kondo model. The presence of Co-subsystem leads to the occurrence of spin-dependent channel in electron scattering conduction.

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Держатели документа:
Kirensky Institute of Physics, SB, RAS, 660036, Krasnoyarsk, Russian Federation
Siberian Federal University, 660041, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Yurkin, G. Yu.; Юркин, Глеб Юрьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Beletsky, V. V.
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10.

Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides / S. S. Aplesnin [et al.] // J. Exp. Theor. Phys. - 2008. - Vol. 106, Is. 4. - P. 765-772, DOI 10.1134/S1063776108040158. - Cited References: 39 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
GIANT VOLUME MAGNETOSTRICTION
   COLOSSAL MAGNETORESISTANCE
   MAGNETIC SEMICONDUCTORS
   ELECTRICAL-PROPERTIES
   ROOM-TEMPERATURE
   ALPHA-MNS
   SPINTRONICS
   TRANSITION
   FEXMN1-XS
   FIELDS
Кл.слова (ненормированные):
Coulomb interactions -- Current voltage characteristics -- Electromotive force -- Ferromagnetism -- Magnetic susceptibility -- Magnetization -- Thermoelectricity -- Transport properties -- Charge susceptibility -- External magnetic fields -- Temperature intervals -- Thermoelectromotive force -- Cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0 <= x <= 0.4). Anomalies in the transport properties of these compounds have been found in the temperature intervals Delta T-1 = 200-270 K and Delta T-2 = 530-670 K and at T-3 similar to T-N. The temperature dependences of the magnetic susceptibility, magnetization, and resistivity, as well as the current-voltage characteristics, exhibit hysteresis. In the domain of magnetic ordering at temperatures below the Neel temperature (TN), the anti ferromagnetic CoxMn1 - xS sulfides possess a spontaneous magnetic moment that is explained using a model of the orbital ordering of electrons in the t(2g) bands. The influence of the cobalt-ion-induced charge ordering on the transport and magnetic properties of sulfides has been studied. The calculated values of the temperatures corresponding to the maxima of charge susceptibility, which are related to a competition between the on-site Coulomb interaction of holes in various subbands and their weak hybridization, agree well with the experimental data.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Velikanov, D. A.
Balaev, A. D.
Balaev, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Aplesnin, S. S.
Bandurina, O. N.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Yanushkevich, K. I.
Galyas, A. I.
Demidenko, O. F.] Natl Acad Sci, Joint Inst Solid State & Semicond Phys, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Joint Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, Minsk 220072, Belarus

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Yanushkevich, K. I.; Galyas, A. I.; Demidenko, O. F.; Bandurina, O. N.
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