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1.


   
    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением
РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE

   DOPED ZNO FILMS

   OPTICAL-PROPERTIES

   MAGNETIC-FIELD

   NEGATIVE MAGNETORESISTANCE

   CARBON NANOTUBES

   TEMPERATURE

   SEMICONDUCTOR

   TRANSPORT

Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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2.


   
    Magnetic field-sensitive lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure / I. A. Bondarev [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P4.11. - P. 239. - References: 1. - This work was supported by the Russian Foundation of Basic Research, project nos. 14-02-00234 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
hybrid structure -- magnetoresistance -- lateral photovoltage


Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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3.


   
    Theoretical investigation of the interfaces and mechanisms of induced spin polarization of 1D narrow zigzag graphene- and h-BN nanoribbons on a SrO-terminated LSMO(001) surface / P. Avramov [et al.] // J. Phys. Chem. A. - 2017. - Vol. 121, Is. 3. - P. 680-689, DOI 10.1021/acs.jpca.6b09696. - Cited References:74. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow; and the ICC of Novosibirsk State University for providing the computing resources. P.B.S. acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2015-033). The Russian Science Foundation (Grant No 14-13-00139) supported the work of the Russian team. The Japanese Science Foundation (JSPS KAKENHI, Grant No 16H3875) supported the work of the Japanese team. . - ISSN 1089-5639
РУБ Chemistry, Physical + Physics, Atomic, Molecular & Chemical
Рубрики:
HEXAGONAL BORON-NITRIDE
   AUGMENTED-WAVE METHOD

   GIANT MAGNETORESISTANCE

Аннотация: The structure of the interfaces and the mechanisms of induced spin polarization of 1D infinite and finite narrow graphene- and h-BN zigzag nanoribbons placed on a SrO-terminated La1-xSrxMnO3 (LSMO) (001) surface were studied using density functional theory (DFT) electronic structure calculations. It was found that the pi-conjugated nanofragments are bonded to the LSMO(001) surface by weak disperse interactions. The types of coordination of the fragments, the strength of bonding, and the rate of spin polarization depend upon the nature of the fragments. Infinite and finite graphene narrow zigzag nanoribbons are characterized by the lift of the spin degeneracy and strong spin polarization caused by interface-induced structural asymmetry and oxygen-mediated indirect exchange interactions with Mn ions of LSMO support. Spin polarization changes the semiconducting nature of infinite graphene nanoribbons to half-metallic state with visible spin-up density of states at the Fermi level. The h-BN nanoribbon binding energy is weaker than graphene nanoribbon ones with noticeably shorter interlayer distance. The asymmetry effect and indirect exchange interactions cause spin polarization of h-BN nanoribbon as well with formation of embedded states inside the band gap. The results show a possibility to use one-atom thick nanofragments to design LSMO-based heterostructures for spintronic nanodevices with h-BN as an inert spacer to develop different potential barriers.

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Держатели документа:
Kyungpook Natl Univ, Dept Chem, 80 Daehak Ro, Daegu 41566, South Korea.
Kyungpook Natl Univ, Green Nano Mat Res Ctr, 80 Daehak Ro, Daegu 41566, South Korea.
Siberian Fed Univ, 79 Svobodniy Pr, Krasnoyarsk 660041, Russia.
LV Kirensky Inst Phys SB RAS, 50-38 Akademgorodok, Krasnoyarsk 660036, Russia.
Natl Inst Quantum & Radiol Sci & Technol QST, Naka, Ibaraki 3191106, Japan.
Natl Univ Sci & Technol MISiS, Moscow 119049, Russia.

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Kuzubov, A. A.; Кузубов, Александр Александрович; Kuklin, A. V.; Куклин, Артем Валентинович; Lee, H.; Kovaleva, E. A.; Ковалева, Евгения Андреевна; Sakai, S.; Entani, S.; Naramoto, H.; Sorokin, P. B.; Ministry of Education and Science of the Russian Federation [K2-2015-033]; Russian Science Foundation [14-13-00139]; Japanese Science Foundation (JSPS KAKENHI) [16H3875]
}
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4.


   
    Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures / N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 140-143, DOI 10.1016/j.jmmm.2016.12.092. - Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K. . - ISSN 0304-8853. - ISSN 1873-4766
РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SPINTRONICS
   BREAKDOWN

   SILICON

   SPIN

Кл.слова (ненормированные):
Hybrid structures -- Magnetoresistance -- Magnetoimpedance -- Photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
}
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5.


   
    The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films / I. Edelman [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 443. - P. 107-115, DOI 10.1016/j.jmmm.2017.07.022. - Cited References: 35. - The work was supported partly by the Grant of the President of the Russian Federation no. NSh-7559.2016.2. M.E. and D.C.J. acknowledge support from the National Science Foundation under grant DMR-1266217. . - ISSN 0304-8853
Кл.слова (ненормированные):
Copper selenide -- CuCr2Se4 films -- Magnetic anisotropy -- Trasnverse kerr effect -- Magnetic resonance -- Magnetoresistance
Аннотация: Crystallographically aligned nanocrystalline films of the ferromagnetic spinel CuCr2Se4 were successfully synthesized and their structure and alignment were confirmed by X-ray diffraction and high-resolution transmission electron microscopy. The average size of the crystallites is about 200–250 nm, and their (1 1 1) crystal planes are parallel to the film plane. A good match of the film’s electronic structure to that of bulk CuCr2Se4 is confirmed by transverse Kerr effect measurements. Four easy 〈1 1 1〉 axes are present in the films. One of these axes is oriented perpendicular and three others are oriented at an angle of 19.5° relative to the film plane. The magnetic properties of the films are determined by a competition between the out-of-plane magnetocrystalline anisotropy and the in-plane shape anisotropy. Magnetic measurements show that the dominating type of anisotropy switches from shape to magnetocrystalline anisotropy near 160 K, which leads to a switch of the effective easy axis from inside the film plane at room temperature to perpendicular to the film plane as the temperature decreases. At last, a moderately large, negative value of the low-temperature magnetoresistance was observed for the first time in CuCr2Se4 films.

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Держатели документа:
Kirensky Institute of Physics, FRC KSC RAS, Krasnoyarsk, Russian Federation
Department of Chemistry, University of Oregon, Eugene, OR, United States
Siberian Federal University, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology FRC “KSC SB RAS”, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Edelman, I. S.; Эдельман, Ирина Самсоновна; Esters, M.; Johnson, D. C.; Yurkin, G. Yu.; Юркин, Глеб Юрьевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautsky, M. V.; Рауцкий, Михаил Владимирович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Lyashchenko, S. A.; Лященко, Сергей Александрович; Ivantsov, R. D.; Иванцов, Руслан Дмитриевич; Petrov, D. A.; Петров, Дмитрий Анатольевич; Solovyov, L. A.
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6.


   
    The influence of magnetic field on the frequency dependence of the impedance in the anion–substituted manganese chalcogenides / O. B. Romanova [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P4.4. - P. 232. - This work was financially supported by RFFI №15–42–04099 and assignment №114090470016. . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
chalcogenides -- impedance -- relaxation -- magnetoresistance

Держатели документа:
Scientific-Practical Materials Research Center NAS, Minsk, Belarus

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Korolev, V. V.; Королёв В. В.; Kretinin, V. V.; Кретинин В. В.; Yanushkevich, K. I.; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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7.


   
    Magnetotransport effects in the Mn/SiO2/p-Si Hybrid Structure / D. A. Smolyakov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P1.17. - P. 77. - References: 2. - This study was supported by the Russian Foundation for Basic Research, project no. 14-02-00234-a . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
hybrid structures -- impedance -- magnetoresistance


Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Gustaitsev, A. O.; Густайцев, Артур Олегович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Bondarev, I. A.; Бондарев, Илья Александрович; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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8.


   
    Magnetic, transport, and magnetotransport properties of the textured Fe3O4 thin films reactively deposited onto SiO2/Si / A. S. Tarasov [et al.] // J. Alloys Compd. - 2016. - Vol. 688. - P. 1095-1100, DOI 10.1016/j.jallcom.2016.07.138. - Cited References: 40. - This work was supported in part by the Russian Foundation for Basic Research, project no. 14-02-00234; the Russian Academy of Sciences, Program “Far East” no. 0262-2015-0057; and the Ministry of Education and Science of the Russian Federation, state order no. 16.663.2014K. The XRD study was supported by the state budget allocated to the Russian Academy of Sciences, fundamental research project no. V. 45.3.1. The authors are grateful to the Krasnoyarsk Regional Fund for Science and Technical Activity Support and the Council of the President of the Russian Federation on Grants. . - ISSN 0925-8388
Кл.слова (ненормированные):
Magnetite -- Magnetoresistance -- Reactive deposition
Аннотация: The structural, magnetic, transport, and magnetotransport properties of Fe3O4 thin films with thicknesses from 38 nm to 95 nm are systematically investigated. The occurrence of the Verwey transition in these films at a temperature of about 120 K is established. It is found that the temperature dependences of the magnetic moment have a feature near 40 K, which can be attributed to the multiferroic phase. According to the X-ray diffraction data, the film structure represents a (001) texture. As was established using transmission electron microscopy, the height and width of texture crystallites increase with film thickness. Analysis of the temperature dependences of the resistivity showed that the dominant carrier transport mechanism in the films is thermoactivated tunneling. The thermoactivation energy, along with the room-temperature resistivity, decreases with increasing film thicknesses, which is most likely related to the variation in the crystallite size, especially in the crystallite width. The field dependence of magnetoresistance behaves similarly over the entire temperature range and has a positive MR peak in weak fields, which is related to spin-dependent tunneling through Fe3O4 grains and antiferromagnetically coupled antiphase boundaries. © 2016 Elsevier B.V.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Automation and Control Processes, Russian Academy of Sciences, Far Eastern Branch, Vladivostok, Russian Federation
School of Natural Sciences, Far Eastern Federal University, Vladivostok, Russian Federation
Institute of Chemistry and Chemical Technology, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Eremin, E. V.; Еремин, Евгений Владимирович; Korobtsov, V. V.; Balashev, V. V.; Vikulov, V. A.; Solovyov, L. A.; Соловьев, Леонид Александрович; Volkov, N. V.; Волков, Никита Валентинович
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9.


   
    Magnetic-field-driven electron transport in ferromagnetic/insulator/semiconductor hybrid structures / N. V. Volkov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. I4.4. - P. 214. - References: 3 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
hybrid structures -- magnetoresistance -- magnetoimpedance


Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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10.


   
    Magnetoresistance TmxMn1–xS in paramagnetic state / S. S. Aplesnin [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. O4.5. - P. 226. - References: 4 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
magnetoresistance -- Hall resistance -- conductivity


Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Kretinin, V. V.; Кретинин В. В.; Sitnikov, M. N.; Ситников Максим Николаевич; Romanova, O. B.; Романова, Оксана Борисовна; Korolev, V. K.; Pichugin, A. Y.; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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