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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
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Gavrichkov, V. A.
An impurity resistivity of doped manganese perovskites / V. A. Gavrichkov, S. G. Ovchinnikov // Physica B. - 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P. 828-830, DOI 10.1016/S0921-4526(98)00875-8. - Cited References: 4 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
manganese perovskites -- mobility -- linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H-->0) = 0 for T > T(c) to linear dR/dH\(H-->0) for T < T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
}
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Angular dependence of the magnetoresistance in Y3/4Lu1/4Ba2Cu3O7-CuO composites at 77 K / D. A. Balaev [et al.] // Tech. Phys. Lett. - 2006. - Vol. 32, Is. 8. - P. 677-679, DOI 10.1134/S1063785006080128. - Cited References: 16 . - ISSN 1063-7850

РУБ Physics, Applied
Рубрики:
CERAMIC SUPERCONDUCTORS
   MAGNETIC-FIELD
   MICROSTRUCTURE
   BOUNDARIES
   TRANSPORT
   MOTION
   FILMS
Аннотация: The angular dependence of the magnetoresistance of polycrystalline Y3/4Lu1/4Ba2Cu3O7-CuO composites has been studied. These composites represent a system of Josephson junctions and exhibit a large magnetoresistance at 77 K. In addition to the isotropic component, there is the angle-dependent component proportional to sin(2)theta, where theta is the angle between the directions of current and magnetic field. This behavior is unambiguous evidence for the process of flux flow in the Josephson medium realized in the composites.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Prus, A. G.; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Petrov, M. I.; Петров, Михаил Иванович
}
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Zakharov, Yu. V.
Anisotropy of the magnetoresistance along and across domain-walls in a ferromagnet / Yu. V. Zakharov, Yu. I. Mankov, L. S. Titov // J. Phys. I. - 1991. - Vol. 1, Is. 5. - P. 759-764. - Cited References: 20 . - ISSN 1155-4304

РУБ Physics, Multidisciplinary
Рубрики:
SUPERCONDUCTIVITY
HOMO6S8
Аннотация: We discuss some peculiarities of the conduction electron motion in the vicinity of domain walls which lead to an anisotropy of the magnetoresistance. We also discuss the case of single crystals of ErRh4B4 and HoMo6S8 where magnetoresistance with the same qualitative features has been observed.

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Доп.точки доступа:
Mankov, Yu. I.; Маньков, Юрий Иннокентьевич; Titov, L. S.; Захаров, Юрий Владимирович
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Balaev, D. A.
Anisotropy of the magnetoresistance hysteresis in the granular superconductor Y-Ba-Cu-O at different magnetic-field and transport-current orientations / D. A. Balaev, S. V. Semenov, M. A. Pochekutov // J. Appl. Phys. - 2017. - Vol. 122, Is. 12. - Ст. 123902, DOI 10.1063/1.4986253. - Cited References: 45. - This study was supported by the Russian Foundation for Basic Research, Government of the Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 16-48-243018. . - ISSN 0021-8979
Кл.слова (ненормированные):
Anisotropy -- High temperature superconductors -- Hysteresis -- Magnetic fields -- Magnetic flux -- Magnetism -- Magnetoresistance -- Different-magnetic fields -- External magnetic field -- Granular superconductors -- Macroscopic transport -- Magnetic flux compression -- Magneto transport properties -- Model representation -- Transport currents -- Superconducting materials
Аннотация: Dissipation in granular high-temperature superconductors (HTSs) during the passage of macroscopic transport current j is mainly determined by carrier tunneling through intergrain boundaries (Josephson junctions). In the presence of external magnetic field H, it is necessary to take into account the significant magnetic flux compression, which can lead to the situation when the effective field Beff in the intergrain boundaries exceeds the external field by an order of magnitude. This is observed as a wide hysteresis of the field dependence of magnetoresistance R(H). In this study, we investigate the R(H) hysteresis evolution in granular 1-2-3 HTSs in different j-H orientations. The magnetic flux compression significantly affects the magnetoresistance and its hysteresis for both perpendicular (H ⊥ j) and parallel (H ∥ j) orientations. The obtained experimental data on the R(H) hysteresis at the arbitrary angles θ = ∠H, j are explained using the approach developed for describing the magnetoresistance hysteresis in granular HTSs with regard to the magnetic flux compression and the model representations proposed by Daghero et al. [Phys. Rev. B 66(13), 11478 (2002)]. A concept of the effective field in the intergrain medium explains the well-known anisotropy of the magnetotransport properties of granular HTSs.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Semenov, S. V.; Семёнов, Сергей Васильевич; Pochekutov, M. A.; Балаев, Дмитрий Александрович
}
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Aplesnin, S. S.
Anomalies in magnetoresistance and in the bulk modulus for ferromagnetics with four-spin exchange interaction on the Kondo lattice / S. S. Aplesnin, N. I. Piskunova // J. Phys.: Condens. Matter. - 2006. - Vol. 18, Is. 29. - P. 6859-6868, DOI 10.1088/0953-8984/18/29/023. - Cited References: 29 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
MIXED-VALENCE MANGANITES
   PHASE-SEPARATION
   LA1-XSRXMNO3
   BEHAVIOR
   PECULIARITIES
   TRANSITION
Кл.слова (ненормированные):
Elastic moduli -- Electric resistance -- Ferromagnetism -- Function evaluation -- Paramagnetism -- Transceivers -- Adiabatic approximation -- Kondo lattice -- Paramagnetic state -- Ring exchange -- Magnetoresistance
Аннотация: The temperature dependence of resistivity and the bulk modulus are calculated on the Kondo lattice, with ring exchange between localized spins, using the spin-polaron and adiabatic approximation. Peak and zero values of the bulk modulus as functions of temperature and concentration are determined below the temperature of the transition to the paramagnetic state. The effects of the nearest order between transverse spin components and a value of the ring exchange between localized spins on magnetoresistivity are estimated.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia
ИФ СО РАН
L v Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
M F Reshetneva Aircosmic Siberian State University, Krasnoyarsk, 660014, Russian Federation

Доп.точки доступа:
Piskunova, N. I.; Аплеснин, Сергей Степанович
}
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Anomalous temperature dependence of the magnetoresistance in Co/Cu multilayers / P. D. Kim [et al.] // Phys. Solid State. - 2000. - Vol. 42, Is. 9. - P. 1688-1690, DOI 10.1134/1.1309452. - Cited References: 5 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
FILMS
Аннотация: An anomalous temperature dependence of magnetoresistance (MR) of Co/Cu multilayer films with a similar to 3 Angstrom thick magnetic layer has been established experimentally. The temperature of the MR maximum T-max is shown to coincide with the Neel temperature. The variation of T-max with the Cu layer thickness follows an oscillatory pattern. (C) 2000 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Kim, P. D.; Ким, Пётр Дементьевич; Khalyapin, D. L.; Turpanov, I. A.; Турпанов, Игорь Александрович; Li, L. A.; Ли, Людмила Алексеевна; Beten'kova, A. Ya.; Бетенькова, Анна Яковлевна; Kan, S. V.
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    Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures / N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2015. - Vol. 383. - P. 69-72, DOI 10.1016/j.jmmm.2014.11.014. - Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043. . - ISSN 0304-8853
   Перевод заглавия: Контролируемые напряжением смещения магнитотранспортные явления, наблюдаемые на постоянном и переменном токе в гибридных структурах

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SILICON
SPINTRONICS
FIELD
Кл.слова (ненормированные):
Spintronics -- Hybrid structures -- Magnetoresistance -- Magnetoimpedance -- Photoinduced magnetoresistance
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Ministry of Education and Science of the Russian Federation [02.G25.31.0043]; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
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Babkin, E. V.
Characteristics of magnetite magnetoresistance / E. V. Babkin, N. I. Kiselev, V. G. Pynko // Fiz. Tverd. Tela. - 1995. - Vol. 37, Is. 11. - P. 3547-3549. - Cited References: 5 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

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Доп.точки доступа:
Kiselev, N. I.; Pyn'ko, V. G.; Пынько, Виталий Григорьевич
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10.

Colossal magnetoresistance of FexMn1-xS magnetic semiconductors / G. A. Petrakovskii [et al.] // JETP Letters. - 1999. - Vol. 69, Is. 12. - P. 949-953, DOI 10.1134/1.568118. - Cited References: 8 . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
MANGANITES
Аннотация: The magnetic, electric, magnetoresistive, and structural properties are investigated in the sulfide solid solutions FexMn1-xS, which are based on the antiferromagnetic semiconductor alpha-MnS (the fcc NaCl lattice). Colossal negative magnetoresistance (delta(H)similar to-83% at 160 K for x similar to 0.29), comparable to that observed in La-Ca-Mn-O polycrystals and films (delta(H)similar to-90% at 100 K and 40 kOe), is observed in compounds with intermediate concentrations 0.26 x 0.4, corresponding to the region of incipient ferromagnetism. (C) 1999 American Institute of Physics. [S0021-3640(99)01212-8].

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН

Доп.точки доступа:
Petrakovskii, G. A.; Петраковский, Герман Антонович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Kiselev, N. I.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Bovina, A. F.; Бовина, Ася Федоровна; Abramova, G. M.; Абрамова, Галина Михайловна
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