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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Вальков, Валерий Владимирович, Федосеев, Александр Дмитриевич
Заглавие : Теплоемкость и магнитосопротивление слаболегированного двумерного антиферромагнетика в неколлинеарной фазе
Место публикации : Изв. РАН. Сер. физич. - 2013. - Т. 77, № 3. - С. 387-389. - DOI 10.7868/S0367676513030381
Аннотация: Исследован энергетический спектр подвижных носителей заряда в двумерном антиферромагнетике, помещенном во внешнее магнитное поле. Показано, что учет скоса магнитных подрешеток модифицирует эффективную массу подвижных носителей заряда слаболегированного антиферромагнетика. Этот факт существенным образом сказывается на транспортных и термодинамических свойствах системы. Обнаружено явление перехода в полуметаллическую фазу под воздействием внешнего магнитного поля.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Никитин, Станислав Евгеньевич, Попков, Сергей Иванович, Петров, Михаил Иванович, Терентьев, Константин Юрьевич, Семенов, Сергей Васильевич, Шайхутдинов, Кирилл Александрович
Заглавие : Особенности магнетосопротивления двухслойного монокристаллического манганита La1,4Sr1,6Mn2O7
Коллективы : Сибирский молодежный семинар по высокотемпературной сверхпроводимости и физике наноструктур – ОКНО 2014 (X; 13 - 14 ноября 2014 г.; Новосибирск)
Место публикации : Вестник НГУ. Физика: Новосибирский государственный университет, 2015. - Т. 10, Вып. 1. - С. 63-66. - ISSN 1818-7994
Примечания : Библиогр.: 8
Ключевые слова (''Своб.индексиров.''): манганиты лантана--положительное магнетосопротивление--manganite--positive magnetoresistance
Аннотация: Представлены результаты исследования магнетосопротивления на двухслойном монокристаллическом манганите лантана La1,4Sr1,6Mn2O7 при пропускании транспортного тока вдоль оси с ( j ‖ c ) и приложении внешнего магнитного поля H ‖ j и H ⊥ j. В монокристалле La1,4Sr1,6Mn2O7 в случае, когда H ⊥ j, помимо присущего всем замещенным манганитам лантана отрицательного магнетосопротивления в температурном диапазоне T 60 K, обнаружен эффект положительного магнетосопротивления. Механизм возникновения данного эффекта принципиально отличается от эффекта колоссального магнетосопротивления, присущего всем манганитам лантана. Мы считаем, что появление положительного магнетосопротивления вызвано спин-зависимым туннелированием носителей между марганец-кислородными бислоями, при данной конфигурации «магнитное поле - ток», и может быть объяснено особенностями магнитной структуры данных составов.We investigate magnetoresistance of single-crystal bilayer lanthanum manganite La1.4Sr1.6Mn2O7 at a transport current flowing along the crystal c axis and in external magnetic fields applied parallel to the crystal c axis or ab plane. It is demonstrated that the La1.4Sr1.6Mn2O7 manganite exhibits the positive magnetoresistance effect in the magnetic field applied in the ab plane of the sample at the temperatures T 60 K. The mechanism of this effect is shown to be fundamentally different from the colossal magnetoresistance effect typical of lanthanum manganites. The positive magnetoresistance originates from spin-dependent tunneling of carriers between the manganese-oxygen bilayers and can be explained by features of the magnetic structure of the investigated compounds.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Semenov S. V., Balaev D. A., Petrov M. I.
Заглавие : Universal behavior and temperature evolution of the magnetoresistance hysteresis in granular high-temperature superconductors Y-Ba-Cu-O
Место публикации : Phys. Solid State. - 2021. - Vol. 63, Is. 7. - P.1069-1080. - ISSN 1063-7834, DOI 10.1134/S1063783421070192. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 80. - The authors are grateful to D.M. Gokhfeld for discussion of the results. The measurements of the transport properties were performed in part on a PPMS-6000 system of the Center for Collective Use, Krasnoyarsk Scientific Center, Siberian Branch of the Russian Academy of Sciences
Предметные рубрики: CRITICAL-CURRENT-DENSITY
CURRENT-VOLTAGE CHARACTERISTICS
MAGNETIC-FLUX COMPRESSION
Аннотация: Regularities in the behavior of the magnetoresistance hysteresis R(H) in the granular yttrium high-temperature superconductors (HTSs) have been established. For this purpose, a comparative analysis of the magnetotransport properties has been carried out on the granular HTS samples, which exhibit (i) approximately the same magnetic properties and temperatures of the onset of the superconducting transition (90.5–93.5 K, which is characteristic of HTS grains) and (ii) different critical transport currents JC (which is characteristic of grain boundaries). Despite a significant (by more than an order of magnitude) spread of the JC values for the three samples, a universal behavior of the magnetoresistance hysteresis has been found, which is apparently inherent in all the granular Y–Ba–Cu–O compounds. The R(H) hysteresis is extremely broad and, in a fairly wide external field range, the dependence of the magnetoresistance hysteresis width ΔН on the field Hdec (the external field for the decreasing hysteresis branch is Н = Hdec) is almost linear: ΔH ≈ Hdec. This behavior is observed over the entire temperature range of implementation of the superconducting state (the investigations have been carried out at temperatures of 77–88 and 4.2 K). The result obtained has been explained by considering the effective field in grain boundaries, which is a superposition of the external field and the field induced by the magnetic moments of grains. The field induced by grains, in turn, significantly increases in the region of grain boundaries due to the magnetic flux compression (the grain boundary length is shorter than the HTS grain size by several orders of magnitude). The aforesaid has been confirmed by the analysis of the R(H) hysteresis for the Y–Ba–Cu–O- and CuO-based HTS composite, in which the grain boundary length is purposefully increased; as a result, the flux compression is less pronounced and the R(H) hysteresis narrows.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Petrakovskii G. A., Vasil'ev V. N., Sablina K. A.
Заглавие : Two-phase paramagnetic-ferromagnetic state of La0.7Pb0.3MnO3 single-crystal lanthanum manganite
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2002. - Vol. 44, Is. 7. - P1350-1354. - ISSN 1063-7834, DOI 10.1134/1.1494635
Примечания : Cited References: 17
Предметные рубрики: COLOSSAL MAGNETORESISTANCE
MAGNETIC-RESONANCE
DOPED MANGANITES
LA1-XCAXMNO3
SEPARATION
TRANSITION
RELAXATION
EPR
Аннотация: Two phases, paramagnetic and ferromagnetic, were shown by the magnetic resonance method to coexist below the temperature T-C in La0.7Pb0.3MnO3 single crystals exhibiting colossal magnetoresistance. The magnetic resonance spectra were studied in the frequency range 10-78 GHz. The specific features in the behavior of the spectral parameters were observed to be the strongest at the temperatures corresponding to the maximum magnetoresistance in the crystals. The concentration ratios of the paramagnetic and ferromagnetic phases in the samples were found to be sensitive to variations in temperature and external magnetic field. This behavior suggests realization of the electronic phase separation mechanism in the system under study. (C) 2002 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Patrin G. S., Petrakovskii G. A., Sablina K. A., Ovchinnikov S. G., Varnakov S. N.
Заглавие : Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure
Место публикации : Tech. Phys. Lett.: AMER INST PHYSICS, 2003. - Vol. 29, Is. 3. - P200-202. - ISSN 1063-7850, DOI 10.1134/1.1565633
Примечания : Cited References: 7
Аннотация: We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T-C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film). (C) 2003 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Balaev A. D.
Заглавие : Tunnel Conductivity and Tunnel Magnetoresistance of the Fe-SiO Films: Interplay of the Magnetotransport and Magnetic Properties
Место публикации : Phys. Solid State. - 2019. - Vol. 61, Is. 7. - P.1203-1210. - ISSN 1063-7834, DOI 10.1134/S1063783419070047. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 48
Предметные рубрики: GIANT MAGNETORESISTANCE
GRANULAR FILMS
TEMPERATURE
TRANSPORT
Аннотация: The electrical properties of a system of nanogranular amorphous Fe–SiO films with a SiO concentration between 0 and 92 vol % have been investigated. The samples with a low SiO content are characterized by the metal-type conductivity. With an increase in the dielectric content x in the films, the concentration transition from the metal to tunneling conductivity occurs at x ≈ 0.6. At the same concentration, the ferromagnet–superparamagnet transition is observed, which was previously investigated by the magnetic method. The temperature dependences of the electrical resistivity ρ(T) for the compositions corresponding to the dielectric region obey the law ρ(T) ~ exp(2(C/kT)1/2), which is typical of the tunneling conductivity. The estimation of the metal grain sizes from the tunneling activation energy C has shown good agreement with the sizes obtained previously by analyzing the magnetic properties. In the dielectric region of the compositions, the giant magnetoresistive effect attaining 25% at low temperatures has been obtained.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kiselev N. I., Mankov Yu. I., Pynko V. G.
Заглавие : Transverse magnetoresistance of single-crystal Ni films
Место публикации : Fiz. Tverd. Tela. - 1989. - Vol. 31, Is. 4. - P.243-246. - ISSN 0367-3294
Примечания : Cited References: 7
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Yurkin G. Yu., Patrin G. S., Velikanov D. A., Beletsky V. V.
Заглавие : Transport properties of FeSi with cobalt impurities
Место публикации : TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - С. 493-496. - ISSN 10120394 (ISSN); 9783037850213 (ISBN), DOI 10.4028/www.scientific.net/SSP.168-169.493
Ключевые слова (''Своб.индексиров.''): iron monosilicide--kondo effect--magnetization--resistivity--spindependent scattering--superparamagnetic cluster--cobalt--crystals--electric resistance--electron energy loss spectroscopy--kondo effect--magnetic field effects--magnetic properties--magnetization--magnetoresistance--scattering--superparamagnetism--transport properties--cobalt--electric conductivity--electron scattering--impurities--kondo effect--magnetism--magnetization--experimental investigations--kondo models--magnetoresistance properties--resistivity--si crystals--spin dependent scattering--superparamagnetic clusters--crystal impurities--crystal impurities
Аннотация: The results of experimental investigations of Fe1-xCo xSi crystals in the impurity limit are presented in this article. We made an attempt to study changes of magnetic properties and conductivity in mixed Fe1-xCoxSi crystals in the impurity limit. Magnetoresistance properties are well described in the framework of Kondo model. The presence of Co-subsystem leads to the occurrence of spin-dependent channel in electron scattering conduction.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Velikanov D. A., Balaev A. D., Balaev D. A., Yanushkevich K. I., Galyas A. I., Demidenko O. F., Bandurina O. N.
Заглавие : Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides
Разночтения заглавия :авие SCOPUS: Transport properties and ferromagnetism of Co x Mn 1 - X S sulfides
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 106, Is. 4. - P765-772. - ISSN 1063-7761, DOI 10.1134/S1063776108040158
Примечания : Cited References: 39
Предметные рубрики: GIANT VOLUME MAGNETOSTRICTION
COLOSSAL MAGNETORESISTANCE
MAGNETIC SEMICONDUCTORS
ELECTRICAL-PROPERTIES
ROOM-TEMPERATURE
ALPHA-MNS
SPINTRONICS
TRANSITION
FEXMN1-XS
FIELDS
Ключевые слова (''Своб.индексиров.''): coulomb interactions--current voltage characteristics--electromotive force--ferromagnetism--magnetic susceptibility--magnetization--thermoelectricity--transport properties--charge susceptibility--external magnetic fields--temperature intervals--thermoelectromotive force--cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0
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