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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : An impurity resistivity of doped manganese perovskites
Место публикации : Physica B: ELSEVIER SCIENCE BV, 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P828-830. - ISSN 0921-4526, DOI 10.1016/S0921-4526(98)00875-8
Примечания : Cited References: 4
Предметные рубрики:
Ключевые слова (''Своб.индексиров.''): manganese perovskites--mobility--linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H--0) = 0 for T T(c) to linear dR/dH\(H--0) for T T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Prus A. G., Shaikhutdinov K. A., Petrov M. I.
Заглавие : Angular dependence of the magnetoresistance in Y3/4Lu1/4Ba2Cu3O7-CuO composites at 77 K
Разночтения заглавия :авие SCOPUS: Angular dependence of the magnetoresistance in Y3/4Lu 1/4Ba2Cu3O7-CuO composites at 77 K
Место публикации : Tech. Phys. Lett.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2006. - Vol. 32, Is. 8. - P677-679. - ISSN 1063-7850, DOI 10.1134/S1063785006080128
Примечания : Cited References: 16
Предметные рубрики: CERAMIC SUPERCONDUCTORS
MAGNETIC-FIELD
MICROSTRUCTURE
BOUNDARIES
TRANSPORT
MOTION
FILMS
Аннотация: The angular dependence of the magnetoresistance of polycrystalline Y3/4Lu1/4Ba2Cu3O7-CuO composites has been studied. These composites represent a system of Josephson junctions and exhibit a large magnetoresistance at 77 K. In addition to the isotropic component, there is the angle-dependent component proportional to sin(2)theta, where theta is the angle between the directions of current and magnetic field. This behavior is unambiguous evidence for the process of flux flow in the Josephson medium realized in the composites.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zakharov Yu. V., Mankov Yu. I., Titov L. S.
Заглавие : Anisotropy of the magnetoresistance along and across domain-walls in a ferromagnet
Место публикации : J. Phys. I. - 1991. - Vol. 1, Is. 5. - P.759-764. - ISSN 1155-4304
Примечания : Cited References: 20
Предметные рубрики: SUPERCONDUCTIVITY
HOMO6S8
Аннотация: We discuss some peculiarities of the conduction electron motion in the vicinity of domain walls which lead to an anisotropy of the magnetoresistance. We also discuss the case of single crystals of ErRh4B4 and HoMo6S8 where magnetoresistance with the same qualitative features has been observed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Semenov S. V., Pochekutov M. A.
Заглавие : Anisotropy of the magnetoresistance hysteresis in the granular superconductor Y-Ba-Cu-O at different magnetic-field and transport-current orientations
Место публикации : J. Appl. Phys.: American Institute of Physics, 2017. - Vol. 122, Is. 12. - Ст.123902. - ISSN 00218979 (ISSN), DOI 10.1063/1.4986253
Примечания : Cited References: 45. - This study was supported by the Russian Foundation for Basic Research, Government of the Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 16-48-243018.
Ключевые слова (''Своб.индексиров.''): anisotropy--high temperature superconductors--hysteresis--magnetic fields--magnetic flux--magnetism--magnetoresistance--different-magnetic fields--external magnetic field--granular superconductors--macroscopic transport--magnetic flux compression--magneto transport properties--model representation--transport currents--superconducting materials
Аннотация: Dissipation in granular high-temperature superconductors (HTSs) during the passage of macroscopic transport current j is mainly determined by carrier tunneling through intergrain boundaries (Josephson junctions). In the presence of external magnetic field H, it is necessary to take into account the significant magnetic flux compression, which can lead to the situation when the effective field Beff in the intergrain boundaries exceeds the external field by an order of magnitude. This is observed as a wide hysteresis of the field dependence of magnetoresistance R(H). In this study, we investigate the R(H) hysteresis evolution in granular 1-2-3 HTSs in different j-H orientations. The magnetic flux compression significantly affects the magnetoresistance and its hysteresis for both perpendicular (H ⊥ j) and parallel (H ∥ j) orientations. The obtained experimental data on the R(H) hysteresis at the arbitrary angles θ = ∠H, j are explained using the approach developed for describing the magnetoresistance hysteresis in granular HTSs with regard to the magnetic flux compression and the model representations proposed by Daghero et al. [Phys. Rev. B 66(13), 11478 (2002)]. A concept of the effective field in the intergrain medium explains the well-known anisotropy of the magnetotransport properties of granular HTSs.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Piskunova N. I.
Заглавие : Anomalies in magnetoresistance and in the bulk modulus for ferromagnetics with four-spin exchange interaction on the Kondo lattice
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2006. - Vol. 18, Is. 29. - P.6859-6868. - ISSN 0953-8984, DOI 10.1088/0953-8984/18/29/023
Примечания : Cited References: 29
Предметные рубрики: MIXED-VALENCE MANGANITES
PHASE-SEPARATION
LA1-XSRXMNO3
BEHAVIOR
PECULIARITIES
TRANSITION
Ключевые слова (''Своб.индексиров.''): elastic moduli--electric resistance--ferromagnetism--function evaluation--paramagnetism--transceivers--adiabatic approximation--kondo lattice--paramagnetic state--ring exchange--magnetoresistance
Аннотация: The temperature dependence of resistivity and the bulk modulus are calculated on the Kondo lattice, with ring exchange between localized spins, using the spin-polaron and adiabatic approximation. Peak and zero values of the bulk modulus as functions of temperature and concentration are determined below the temperature of the transition to the paramagnetic state. The effects of the nearest order between transverse spin components and a value of the ring exchange between localized spins on magnetoresistivity are estimated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Khalyapin D. L., Turpanov I. A., Li L. A., Beten'kova A. Ya., Kan S. V.
Заглавие : Anomalous temperature dependence of the magnetoresistance in Co/Cu multilayers
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2000. - Vol. 42, Is. 9. - P1688-1690. - ISSN 1063-7834, DOI 10.1134/1.1309452
Примечания : Cited References: 5
Предметные рубрики: FILMS
Аннотация: An anomalous temperature dependence of magnetoresistance (MR) of Co/Cu multilayer films with a similar to 3 Angstrom thick magnetic layer has been established experimentally. The temperature of the MR maximum T-max is shown to coincide with the Neel temperature. The variation of T-max with the Cu layer thickness follows an oscillatory pattern. (C) 2000 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures
Коллективы : Moscow International Symposium on Magnetism , Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156], Presidium of the Russian Academy of Sciences [20.8], Ministry of Education and Science of the Russian Federation [02.G25.31.0043]
Место публикации : J. Magn. Magn. Mater./ Moscow International Symposium on Magnetism (6th ; Moscow) (29 June – 3 July 2014): Elsevier Science, 2015. - Vol. 383. - P.69-72. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.11.014
Примечания : Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043.
Предметные рубрики: SILICON
SPINTRONICS
FIELD
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--magnetoresistance--magnetoimpedance--photoinduced magnetoresistance
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Babkin E. V., Kiselev N. I., Pyn'ko V. G.
Заглавие : Characteristics of magnetite magnetoresistance
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1995. - Vol. 37, Is. 11. - P.3547-3549. - ISSN 0367-3294
Примечания : Cited References: 5
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Petrakovskii G. A., Ryabinkina L. I., Kiselev N. I., Velikanov D. A., Bovina A. F., Abramova G. M.
Заглавие : Colossal magnetoresistance of FexMn1-xS magnetic semiconductors
Место публикации : JETP Letters. - 1999. - Vol. 69, Is. 12. - P.949-953. - ISSN 0021-3640, DOI 10.1134/1.568118
Примечания : Cited References: 8
Предметные рубрики: MANGANITES
Аннотация: The magnetic, electric, magnetoresistive, and structural properties are investigated in the sulfide solid solutions FexMn1-xS, which are based on the antiferromagnetic semiconductor alpha-MnS (the fcc NaCl lattice). Colossal negative magnetoresistance (delta(H)similar to-83% at 160 K for x similar to 0.29), comparable to that observed in La-Ca-Mn-O polycrystals and films (delta(H)similar to-90% at 100 K and 40 kOe), is observed in compounds with intermediate concentrations 0.26 x 0.4, corresponding to the region of incipient ferromagnetism. (C) 1999 American Institute of Physics. [S0021-3640(99)01212-8].
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