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1.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Dubrovskii A. A., Popkov S. I., Gokhfeld D. M., Semenov S. V., Shaikhutdinov K. A., Petrov M. I.
Заглавие : Specific features in the hysteretic behavior of the magnetoresistance of granular high-temperature superconductors
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2012. - Vol. 54, Is. 11. - P.2155-2164. - ISSN 1063-7834, DOI 10.1134/S1063783412110030
Примечания : Cited References: 52. - This study was supported by the Russian Foundation for Basic Research within the framework of the Regional Competition SIBERIA (project no. 11-02-98007 r-sibir'_a).
Предметные рубрики: CURRENT-VOLTAGE CHARACTERISTICS
WEAK MAGNETIC-FIELDS
CRITICAL-CURRENT DENSITY
T-C SUPERCONDUCTORS
ANGULAR-DEPENDENCE
JOSEPHSON MEDIUM
TRANSPORT-PROPERTIES
CRITICAL-STATE
YBa2Cu3O7-DELTA
COMPOSITES
Аннотация: The behavior of the hysteresis of the magnetoresistance R(H) of granular high-temperature superconductors has been investigated under the conditions where the resistive response of the subsystem of grain boundaries close to saturation. The hysteretic dependences R(H) have been measured for Y1-xPrxBa2Cu3O7 samples at x = 0.11 and 0.04 with the transition temperatures T-C approximate to 85.5 and 91.0 K, respectively. The evolution of the field width of the hysteresis R(H) has been examined by varying the measuring current. The limit of the applicability has been established for the concept of the effective field in the intergranular medium, which was previously proposed for the description of the hysteretic behavior of the magnetoresistance R(H) and thermal magnetic prehistory of the granular high-temperature superconductors. In the studied samples, the approximation of the effective field in the intergranular medium is applicable until the magnetoresistance of the subsystem of grain boundaries exceeds (90 +/- 5)% of the maximum value.
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2.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bykov A. A., Popkov S. I., Shaykhutdinov K. A., Sablina K. A.
Заглавие : Relaxation of magnetoresistance of single-crystalline (La0.5Eu0.5)0.7Pb0.3MnO3 in a pulsed magnetic field
Место публикации : Tech. Phys. Lett.: MAIK Nauka-Interperiodica / Springer, 2012. - Vol. 38, Is. 12. - P.1080-1082. - ISSN 1063-7850, DOI 10.1134/S1063785012120036
Примечания : Cited References: 8
Предметные рубрики: RESISTANCE
FILMS
Аннотация: The magnetoresistance (MR) of substituted lanthanum manganite (La0.5Eu0.5)(0.7)Pb0.3MnO3 has been measured in a pulsed magnetic field with amplitude H = 250 kOe at various temperatures. It is established that temperature dependence of the MR relaxation parameter tau(T) is correlated with temperature dependence of the electric resistance R(T). A mechanism of relaxation is proposed that is related to the relaxation of conducting and dielectric phases in the volume of a sample under the conditions of phase separation. It is shown that the behavior of tau is related to the number of phase boundaries in the volume.
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3.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Mita Y., Kagayama T., Abramova G. M., Petrakovskii G. A., Sokolov V.V.
Заглавие : Metallic transition of the colossal magnetoresistance material FexMn1-xS (x= 0.18) under high pressure
Место публикации : J. Korean Phys. Soc. - 2013. - Vol. 63, Is. 3. - P.325-328. - ISSN 0374-4884, DOI 10.3938/jkps.63.325
Ключевые слова (''Своб.индексиров.''): metallization--mott insulator--pressure
Аннотация: A pressure-induced phase transition in the colossal magnetoresistance (CMR) material Fe0.18Mn0.82S was studied by using infrared (IR) reflection and X-ray diffraction (XRD) at pressures up to 40 GPa at room temperature. XRD shows that the crystal structure of this sample is a NaCl-type structure at ambient pressure, that a structural change starts around 17 GPa, and that a mixed phase mixed between the NaCl-type low-pressure phase and an unknown structure high pressure phase continues up to around 25 GPa. On the other hand, the IR reflectivity increases with increasing pressure from 15 GPa and becomes remarkably high around 20 GPa. The spectra do not show any changes from 30 GPa. From these results, we conclude that the phase transition of Fe0.18Mn0.82S at room temperature starts around 15 GPa and is completed around 30 GPa and that the high-pressure phase is not a band-overlapping semimetal but a true metal. В© 2013 The Korean Physical Society.
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4.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Popkov S. I., Shaykhutdinov K. A., Sablina K. A., Bykov A. A.
Заглавие : Relaxation of magnetoresistance of single-crystalline (La[[d]]0.5[[/d]]Eu[[d]]0.5[[/d]])[[d]]0.7[[/d]]Pb[[d]]0.3[[/d]]MnO[[d]]3[[/d]] in a pulse magnetic field
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism: abstracts. - Vladivostok: FEFU, 2013. - С. 275. - ISBN 978-5-7444-3124-2
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5.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Nikitin S. E., Krasikov A. A., Bykov A. A., Terent'yev K. Yu., Shaykhutdinov K. A., Popkov S. I.
Заглавие : Relaxation of magnetoresistance after pulsed magnetic field in single crystal La[[d]]0.75[[/d]]Ca[[d]]0.25[[/d]]MnO[[d]]3[[/d]]
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism: abstracts. - Vladivostok: FEFU, 2013. - С. 284. - ISBN 978-5-7444-3124-2
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6.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Photoinduced giant magnetoresistance in the Fe/SiO2/p-Si hybrid structure with a schottky barrier
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism: abstracts. - Vladivostok: FEFU, 2013. - С. 322. - ISBN 978-5-7444-3124-2
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7.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Baron F. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Extremely large magnetoresistance induced by optical irradiation in the Fe/SiO2/p-Si hybrid structure with Schottky barrier
Коллективы : Russian Foundation for Basic Research [11-02-00367-a]; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures [20.8]; Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics [II.4.3]; Siberian Branch of the Russian Academy of Sciences [43, 85, 102]; Russian Ministry of Education and Science [N 02.G25.31.0043]
Место публикации : J. Appl. Phys.: American Institute of Physics, 2013. - Vol. 114, Is. 9. - Ст.093903. - P. - ISSN 0021-8979, DOI 10.1063/1.4819975
Примечания : Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, Project No. 11-02-00367-a; Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics, Project No. II.4.3; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 43, 85 and 102; Project of the Russian Ministry of Education and Science N 02.G25.31.0043.
Предметные рубрики: SPIN POLARIZATION
SPINTRONICS
SILICON
Аннотация: We report giant magnetoresistance (MR) effect that appears under the influence of optical radiation in common planar device built on Fe/SiO2/p-Si hybrid structure. Our device is made of two Schottky diodes connected to each other by the silicon substrate. Photo-induced MR is positive and the MR ratio reaches the values in excess of 10(4)%. The main peculiarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. To explain such unexpected behavior of the MR, one needs to take into account contribution of several physical mechanisms. The main contribution comes from the existence of localized interface states at the SiO2/p-Si interface, which provide the spots for the photo-current conduction by virtue of the sequential tunneling through them or thermal generation and optical excitation of mobile charges. External magnetic field changes the probability of these processes due to its effect on the energy states of the conduction centers. Two possible mechanisms that may be responsible for the observed dependence of magneto-resistance on the field polarity are discussed: the effect of the Lorentz force on moving carriers and spin splitting of electrons moving in the electrostatic potential gradient (Rashba effect). The most significant observation, in our opinion, is that the observed MR effect is seen exclusively in the subsystem of minority carriers transferred into non-equilibrium state by optical excitation. We suggest that building such magneto-sensitive devices based on this mechanism may set a stage for new types of spintronic devices to emerge. (C) 2013 AIP Publishing LLC.
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8.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Extremely large photoinduced magnetoresistance in the Fe/SiO2/p-Si hybrid structure
Коллективы : Joint European Conference on Magnetism (2013 ; August ; 25-30; Rhodes, Greece)
Место публикации : Joint Eur. Conf. on Magnetism: Book of abstracts. - 2013. - P.55
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9.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Вальков, Валерий Владимирович, Федосеев, Александр Дмитриевич
Заглавие : Теплоемкость и магнитосопротивление слаболегированного двумерного антиферромагнетика в неколлинеарной фазе
Место публикации : Изв. РАН. Сер. физич. - 2013. - Т. 77, № 3. - С. 387-389. - DOI 10.7868/S0367676513030381
Аннотация: Исследован энергетический спектр подвижных носителей заряда в двумерном антиферромагнетике, помещенном во внешнее магнитное поле. Показано, что учет скоса магнитных подрешеток модифицирует эффективную массу подвижных носителей заряда слаболегированного антиферромагнетика. Этот факт существенным образом сказывается на транспортных и термодинамических свойствах системы. Обнаружено явление перехода в полуметаллическую фазу под воздействием внешнего магнитного поля.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Val'kov V. V., Fedoseev A. D.
Заглавие : Heat capacity and magnetoresistance of a lightly doped two-dimensional antiferromagnet in the noncollinear phase
Место публикации : Bull. Russ. Acad. Sci.: Phys. - 2013. - Vol. 77, Is. 3. - P.349-351. - ISSN 1062-8738, DOI 10.3103/S1062873813030386
Аннотация: The energy spectrum of mobile charge carriers in a two-dimensional Antiferromagnet placed in external magnetic field is analyzed. It is shown that allowing for the magnetic sublattice skew the effective mass of mobile charge carriers in a lightly doped Antiferromagnet. This affects substantially the transport and thermodynamic properties of the system. A insulator-semimetal transition is induced with external magnetic field. В© 2013 Allerton Press, Inc.
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