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1.


    Pparshin, A. S.
    Spin-wave resonance in thin monocrystalline iron-manganese ferrite films / A. S. Pparshin, N. S. Chistyakov // Phys. Status Solidi B. - 1982. - Vol. 112, Is. 2. - P. K89-K92, DOI 10.1002/pssb.2221120249. - Cited References: 7 . - ISSN 0370-1972
РУБ Physics, Condensed Matter


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Доп.точки доступа:
Chistyakov, N. S.; Чистяков, Николай Сергеевич
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2.


    Parshin, A. S.
    Effect of a magnetization inhomogeneity on spin-wave resonance-spectra of monocrystalline films of iron-manganese spinel / A. S. Parshin, N. S. Chistyakov // Izv. Vysshikh Uchebnykh Zavedenii Fizika. - 1983. - Vol. 26, Is. 11. - P. 26-29 ; Russian Physics Journal ; Известия высших учебных заведений. Физика. - Cited References: 10 . - ISSN 0021-3411
РУБ Physics, Multidisciplinary


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Держатели документа:
LV KIRENSKII PHYS INST,KRASNOYARSK,USSR
ИФ СО РАН
Доп.точки доступа:
Chistyakov, N. S.; Чистяков, Николай Сергеевич; Паршин, Анатолий Сергеевич


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3.


    Popov, E. A.
    Temperature and field dependence of exciton-magnon absorption of NaMnCl//3. / E. A. Popov, M. M. Kotlyarskii, I. S. Edelman // Physica Status Solidi B - Basic Research. - 1985. - Vol. 132, Is. 2. - P. 465-470 . - ISSN 0370-1972
Кл.слова (ненормированные):
BAND STRUCTURE -- LIGHT - Absorption -- SODIUM COMPOUNDS - Optical Properties -- EXCITON-MAGNON ABSORPTION -- SODIUM MANGANESE CHLORIDE -- MAGNETIC MATERIALS
Аннотация: The behaviour of the optical absorption bands of NaMnCl//3 is experimentally studied in the region of the **6A//1//g to **4A//1//g, **4E//g(**4G) transition of the Mn**2** plus ion in the temperature range 1. 8 to 20 K and in magnetic fields up to 20 T. Exciton and its 'hot' magnon sidebands are observed in the spectrum. The anomalous temperature dependence of the exciton-magnon bands intensity is explained by participation of magnons with wave vector K does not equal 0 in absorption. The low energy exciton-magnon band is supposed to be due to simultaneous creation of an exciton and annihilation of three thermally created magnons.

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Доп.точки доступа:
Kotlyarskii, M. M.; Edelman, I. S.; Эдельман, Ирина Самсоновна
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4.


   
    Comparison of negative magnetoresistance mechanisms in manganese perovskites and chromium spinels / V. A. Gavrichkov [et al.] // Phys. Solid State. - 1999. - Vol. 41, Is. 10. - P. 1652-1655, DOI 10.1134/1.1131064. - Cited References: 17 . - ISSN 1063-7834
РУБ Physics, Condensed Matter
Рубрики:
ANISOTROPIC MAGNETORESISTANCE
   TRANSPORT-PROPERTIES

   THIN-FILMS

   ALLOYS

Аннотация: A transition of the field dependence of the electrical resistivity from a square law (similar to H-2) above T-c to a linear function (similar to H) below T-c is observed in the degenerate ferromagnetic semiconductor HgCr2Se4(n). Together with the large negative magnetoresistance, these magnetoelectric effects correspond to effects observed in the perovskite-type oxides La1-xCaxMnOdelta. Inasmuch as the undoped semiconductor HgCr2Se4 is a ferromagnet with approximately the same critical temperature as the doped semiconductor and in view of the total lack of data on the Jahn-Teller effect in this compound, we infer that our results cast doubt on existing hypotheses (polaron and binary exchange) regarding the origin of the giant magnetoresistance in La1-xCaxMnOdelta. Impurity sd scattering is discussed as a possible magnetoresistance mechanism for both compounds. (C) 1999 American Institute of Physics. [S1063-7834(99)01710-4].

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Публикация на русском языке Сравнение механизмов отрицательного магнитосопротивления в марганцевых перовскитах и хромовых шпинелях [Текст] / В. А. Гавричков, Н. Б. Иванова, С. Г. Овчинников [и др.] // Физ. тверд. тела. - Санкт-Петербург, 1999. - Т. 41 Вып. 10. - С. 1800-1803

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 117907, Russia
Krasnoyarsk State Tech Univ, Krasnoyarsk 660074, Russia
ИФ СО РАН

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ivanova, N. B.; Иванова, Наталья Борисовна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Aminov, T. G.; Shabunina, G. G.; Chernov, V. K.; Petukhov, M. V.
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5.


    Gavrichkov, V. A.
    An impurity resistivity of doped manganese perovskites / V. A. Gavrichkov, S. G. Ovchinnikov // Physica B. - 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P. 828-830, DOI 10.1016/S0921-4526(98)00875-8. - Cited References: 4 . - ISSN 0921-4526
РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
manganese perovskites -- mobility -- linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H-->0) = 0 for T > T(c) to linear dR/dH\(H-->0) for T < T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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6.


   
    Metal-dielectric transitions, magnetism, and electronic structure in a system of manganese-doped vanadium sulfides / G. V. Loseva [et al.] // Phys. Solid State. - 2000. - Vol. 42, Is. 3. - P. 539-543, DOI 10.1134/1.1131245. - Cited References: 12 . - ISSN 1063-7834
РУБ Physics, Condensed Matter
Рубрики:
TRANSPORT
Аннотация: The effect of the manganese doping of vanadium monosulfide in a system of the V1-xMnxS (0 x less than or equal to 0.3) solid solutions on their structure and thermal, electrical, and magnetic properties has been investigated. The metal-dielectric transitions are revealed in the studied ranges of concentrations and temperatures. These transitions are accompanied by a change in the magnetic properties. It is demonstrated that the correlation in changes of the electrical and magnetic properties of the sulfides under investigation is characteristic of the metal-dielectric transitions in strongly correlated systems. (C) 2000 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Loseva, G. V.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Kiselev, N. I.
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7.


   
    Antiferromagnet-ferromagnet transition in alpha-MnxS manganese sulfides / G. A. Petrakovskii [et al.] // Phys. Solid State. - 2001. - Vol. 43, Is. 3. - P. 493-495 ; Phys. Solid State. - 2001. - Vol. 43, Is. 3. - P. 493-495, DOI 10.1134/1.1356126. - Cited References: 7 . - ISSN 1063-7834. - Вариант Sopus
РУБ Physics, Condensed Matter

Аннотация: Off-stoichiometric manganese monosulfides alpha -MnxS (1 less than or equal to x less than or equal to 1.25) are synthesized, and their crystal structure and magnetic properties are studied in the 4.2- to 300-K range. The compounds have a NaCl fcc lattice. Increasing the manganese ion concentration x in the antiferromagnetic semiconductors alpha -MnxS is found to result in concentration- (x(c) similar to 1.05) and temperature-driven (T-c similar to 50 K) magnetic transitions from the antiferromagnetic to ferromagnetic state, with the cubic structure remaining unchanged. (C) 2001 MAIK "Nauka/Interperiodica".

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Держатели документа:
Russian Acad Sci, Siberian Div, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirenskii Inst. of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Krasnoyarsk State University, Krasnoyarsk, 660041, Russian Federation
Kirenskii Inst. of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
Krasnoyarsk State University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Petrakovskii, G. A.; Петраковский, Герман Антонович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Abramova, G. M.; Абрамова, Галина Михайловна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Bovina, A. F.; Бовина, Ася Федоровна

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8.


   
    Influence of magnetic ordering on the resistivity anisotropy of alpha-MnS single crystal / S. S. Aplesnin [et al.] // Solid State Commun. - 2004. - Vol. 129, Is. 3. - P. 195-197 ; Solid State Commun. - 2004. - Vol. 129, Is. 3. - P. 195-197, DOI 10.1016/j.ssc.2003.09.028. - Cited References: 7 . - ISSN 0038-1098. - Вариант Sopus
РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
anisotropy of resistivity -- optical gap -- D. Anisotropy of resistivity -- D. Optical gap -- Antiferromagnetism -- Band structure -- Bandwidth -- Diffractometers -- Electron transitions -- Fermi level -- Hamiltonians -- Light absorption -- Magnetic anisotropy -- Magnetization -- Single crystals -- Spectroscopic analysis -- X ray diffraction analysis -- Coulomb repulsion -- Resistivity anisotropy -- Semiconducting manganese compounds -- D. Anisotropy of resistivity -- D. Optical gap -- Antiferromagnetism -- Band structure -- Bandwidth -- Diffractometers -- Electron transitions -- Fermi level -- Hamiltonians -- Light absorption -- Magnetic anisotropy -- Magnetization -- Single crystals -- Spectroscopic analysis -- X ray diffraction analysis -- Coulomb repulsion -- Resistivity anisotropy -- Semiconducting manganese compounds
Аннотация: The resistivity and the optical absorbtion spectra of single crystal alpha-MnS are studied in the temperature range 80-300 K along two directions [100] and [111]. Strong anisotropy of the resistivity, and the shift of absorbtion spectra band edge below T < 160 K are explained in terms of model involving delocalized holes in 3d-band manganese ions interacting with localized spins by using the sd-model. (C) 2003 Elsevier Ltd. All rights reserved.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
Siberian Branch, Academcumpus, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Siberian Branch, Academcumpus, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Abramova, G. M.; Абрамова, Галина Михайловна; Kiselev, N. I.; Romanova, O. B.; Романова, Оксана Борисовна

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9.


    Aplesnin, S. S.
    Influence of the four-spin exchange interaction on the magnetic properties of manganites / S. S. Aplesnin, N. I. Piskunova // J. Phys.: Condens. Matter. - 2005. - Vol. 17, Is. 37. - P. 5881-5888, DOI 10.1088/0953-8984/17/37/023. - Cited References: 18 . - ISSN 0953-8984
РУБ Physics, Condensed Matter
Рубрики:
METAL-INSULATOR-TRANSITION
   PHASE

   SUSCEPTIBILITY

   LA1-XSRXMNO3

   FERROMAGNET

   TRANSPORT

Кл.слова (ненормированные):
Computer simulation -- Ion exchange -- Lanthanum compounds -- Magnetic properties -- Monte Carlo methods -- Phase diagrams -- Phase transitions -- Four-spin exchange interaction -- Magnetic phase diagram -- Manganites -- Metal-dielectric transition -- Manganese compounds
Аннотация: It is shown that non-Heisenberg exchange interaction should be taken into account to reproduce the magnetic phase diagram of La(1-x)A(x)MnO(3) (A = Ca, Sr) using only effective exchange parameters and spins. The formation of the four-spin exchange arises from carrier hopping and coincides with the critical concentration metal-dielectric transition. The two- and four-spin exchange parameters are determined by Monte Carlo simulations.

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Держатели документа:
MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660036, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
M F Reshetneva Aircosmic Siberian State University, Krasnoyarsk 660036, Russian Federation
L V Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Science, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Piskunova, N. I.; Аплеснин, Сергей Степанович
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10.


   
    Actual composition and structure of manganese ferrite nanoparticles dispersed in the borate glass matrix / I. G. Vasilyeva [et al.] // Doklady Chemistry. - 2005. - Vol. 401, Is. 1-3. - P. 47-50, DOI 10.1007/s10631-005-0029-y . - ISSN 0012-5008
Кл.слова (ненормированные):
boric acid -- ferrite -- glass -- manganese derivative -- analytic method -- article -- chemical composition -- chemical structure -- nanoparticle -- stoichiometry -- structure analysis -- transmission electron microscopy -- X ray analysis

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Публикация на русском языке Реальный состав и структура наночастиц феррита марганца, диспергированных в матрице боратных стекол [Текст] / И. Г. Васильева [и др.] // Доклады Академии наук. - 2005. - Т. 401 № 3. - С. 349-352

Держатели документа:
Nikolaev Inst. of Inorg. Chemistry, Siberian Division, Russian Academy of Sciences, pr. akademika Lavrent'eva 3, Novosibirsk, 630090, Russian Federation
Boreskov Institute of Catalysis, Siberian Division, Russian Academy of Sciences, pr. akademika Lavrent'eva 5, Novosibirsk, 630090, Russian Federation
Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation
All-Russia Research Center, Vavilov State Optical Institute, ul. Babushkina 36/1, St. Petersburg, 192371, Russian Federation

Доп.точки доступа:
Vasilyeva, I. G.; Dovlitova, L. S.; Zaikovskii, V. I.; Malakhov, V. V.; Edel'man, I. S.; Эдельман, Ирина Самсоновна; Stepanov, A. S.; Aleksandrov, K. S.; Александров, Кирилл Сергеевич
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