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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Greben'kova Yu.E., Sokolov A. E., Edel'man I. S., Andreev N. V., Chichkov V. I.
Заглавие : Linear and circular magnetic dichroism in thin films of lanthanum manganite
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : V Euro-Asian simposium "Trend in MAGnetism": Nanomagnetism: abstracts. - Vladivostok: FEFU, 2013. - P.324. - ISBN 978-5-7444-3124-2
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Greben'kova Yu.E., Sokolov A. E., Edelman I. S., Andreev N. V., Chichkov V. I.
Заглавие : Magneto-optical spectroscopy of manganite thin film : Abstract
Коллективы : "Functional Materials", International Conference , Taurida National V. I. Vernadsky University
Место публикации : Functional materials: Abstracts/ ed. V. N. Berzhansky. - Simferopol, 2013. - P.186. - ISBN 978-966-491-465-6
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Rautskii M. V., Eremin E. V., Patrin G. S., Kim P. D., Lee C. G.
Заглавие : Response of a manganite-based magnetic tunnel structure to microwave radiation
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.125-128. - ISBN 978, DOI 10.4028/www.scientific.net/SSP.190.125. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): magnetic tunnel structure--microwave detection effect--spintronics--current flowing--current-in-plane geometry--magnetic tunnels--magnetization dynamics--microwave detection--non-linearity--rectification effects--spin-polarized currents--voltage signals--magnetic materials--magnetoelectronics--manganese oxide--microwaves--magnetism
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a significant voltage signal due to the rectification effect. The measurements were carried out using current-in-plane geometry with a current flowing parallel to the interfaces in the structure. A value of the microwave-induced voltage strongly depends on a bias current and can be driven by a magnetic field. The rectification effect is discussed both in "Classical" terms of nonlinearity of the current-voltage characteristic and using a mechanism that involves the interplay between the spinpolarized current and magnetization dynamics in the magnetic tunnel structure. В© (2012) Trans Tech Publications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Rautskiy M. V., Eremin E. V., Patrin G. S., Kim P. D., Lee C. G.
Заглавие : Response of a manganite-based magnetic tunnel structure to microwave radiation
Место публикации : J. Phys. D. - 2012. - Vol. 45, Is. 25. - Ст.255301. - ISSN 0022-3727, DOI 10.1088/0022-3727/45/25/255301
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, project no 11-02-00367-a; the Presidium of the Russian Academy of Sciences, program Fundamentals for Basic Research of Nanotechnology and Nanomaterials, project no 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin-Dependent Effects in Solids and Spintronics, project no 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos 5 and 134; and the Federal target program Scientific and Pedagogical Personnel of Innovative Russia (State contract no NK-556P_15).
Предметные рубрики: IDENTICAL METALS
JUNCTIONS
RECTIFICATION
SPINTRONICS
MECHANISM
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a typical voltage signal due to the rectification effect. We performed measurements in current-in-plane geometry when a current flows parallel to the interfaces in the structure. The value of the microwave-induced voltage strongly depends on the bias current and can be driven by a magnetic field. The rectification effect is discussed both in classical terms of nonlinearity of the current-voltage characteristics and within the mechanism involving the interplay between the spin-polarized current and the magnetization dynamics in the magnetic tunnel structure.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V.
Заглавие : Spintronics: manganite-based magnetic tunnel structures
Место публикации : Phys. Usp.: Turpion LTD, 2012. - Vol. 55, Is. 3. - P.250-269. - ISSN 1063-7869, DOI 10.3367/UFNe.0182.201203b.0263
Примечания : Cited References: 91. - This work was supported by the Russian Foundation for Basic Research (grant No. 11-02-00367-a); the program of the Presidium of the RAS, Fundamental Research on Nanotechnologies and Nanomaterials (grant No. 21.1); the program of the Department of Physical Sciences of the RAS "Spin Phenomena in Solid Nanostructures and Spintronics" (grant No. 2.4.4.1); integration projects of the Siberian Branch, RAS, Nos 5 and 134; and the Federal Special Purpose Program "Scientific and Pedagogical Personnel of Innovative Russia" (state contract No. NK-556P_15).
Предметные рубрики: HIGH-FREQUENCY RECTIFICATION
THIN INSULATING FILM
COLOSSAL MAGNETORESISTANCE
GIANT MAGNETORESISTANCE
ELECTRONIC-STRUCTURE
SANDWICH STRUCTURES
SPIN POLARIZATION
IDENTICAL METALS
PHASE-SEPARATION
ROOM-TEMPERATURE
Аннотация: A topical and highly promising aspect of the field of spintronics is the physics involved in the flow of a spin-polarized current through magnetic tunnel structures. This review focuses on manganite-based structures, which are appealing for their high Curie temperature, highly spin-polarized conduction electrons, high chemical stability, and well-developed fabrication technology. Particular emphasis is placed on some novel approaches to studying the tunnel structures, including the use of planar geometry and the application of combined external factors (microwave and optical radiation) to investigate spin-polarized transport.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Smolyakov D. A., Rautskii M. V., Chichkov V. I., Mukovskii Y. M.
Заглавие : Magnetization dynamics and electron transport in the La0.7Sr0.3MnO3/Y3Fe5O12 hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism
Место публикации : Solid State Phenom.: Selected, peer reviewed papers/ ed.: S. G. Ovchinnikov, A. Samardak: Trans Tech Publications, 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P.368-371. - ISSN 978-303835054-5, DOI 10.4028/www.scientific.net/SSP.215.368. - ISSN 1662-9779
Примечания : Cited References: 6
Ключевые слова (''Своб.индексиров.''): hybrid structure--manganite--spin pumping
Аннотация: We present the results of investigations of the spin-polarized current and spin dynamics in the hybrid structures ferrimagnetic insulator/ferromagnetic metal subjected to microwave radiation. We studied the La0.7Sr0.3MnO3/Y3Fe5O12 bilayer films on the Gd3Ga5O12 substrate. It was experimentally established that under the action of spin pumping the resistance of the La0.7Sr0.3MnO3 film changes. The value of ?R is maximum in the sample with a La0.7Sr0.3MnO3 layer thickness of 10 nm and sharply drops as the manganite film thickness is increased. The resistance decreases in the paramagnetic region and grows in the ferromagnetic region at temperatures below the metal-insulator transition point. The variation in the resistance of the manganite film can be attributed to the correlation of the spin dynamics and transport properties of conduction electrons in the structure. © (2014) Trans Tech Publications, Switzerland.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bondarev I. A., Volkov N. V.
Заглавие : Transport properties of the La0.75Ca0.25MnO3 manganite
Коллективы : RACIRI Summer School
Место публикации : RACIRI Summer School: Book of abstracts. - 2013. - P.18
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Edelman I. S., Sokolov A. E., Andreev N. V., Chichkov V. I.
Заглавие : Visible circular and linear magnetic dichroism in manganite thin films
Место публикации : Circular and Linear Dichroism/ ed. J. Wallace. - New York: Nova Science Publishers, 2015. - P.131-158. - (Lasers and electro-optics research and technology). - ISBN 978-1-63483-762-0
Примечания : Cited References: 45. - The work was supported partly by RFBR, grant № 14-02-01211 and Grant of President of Russian Federation No. NSh-2886.2014.2
Аннотация: Evolution of the magneto-optical spectra of the La0.7Sr0.3MnO3, Pr0.6Sr0.4MnO3 and Pr0.8Sr0.2MnO3 manganite films with the change in the Sr concentration has been studied in the visible and near infrared range. Magnetic circular dichroism (MCD) and magnetic linear dichroism (MLD) have been chosen for investigation as these effects are higher informative comparing to the Faraday and Kerr effects. The Sr concentration increase in the samples leads to a sequential shift of the gravity centers of the magneto-optical bands to lower energies, to a strong increase of the effects magnitude in the range of 2.5-3.6 eV, and to the appearance of the additional bands in the spectra of the films with metallic conductivity. Experimental spectra have been decomposed to several Gaussian and Lorentz contours, and their intensity temperature dependences have been analyzed. For the films with metallic conductivity, the different character of the temperature dependences of the different bands intensity has been found. Basing on the characteristic dependence of the magneto-optical bands intensity on temperature, Sr concentration, and films conductivity type, electron transitions responsible for the MCD and MLD spectra formation have been identified.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Никитин, Станислав Евгеньевич, Попков, Сергей Иванович, Петров, Михаил Иванович, Терентьев, Константин Юрьевич, Семенов, Сергей Васильевич, Шайхутдинов, Кирилл Александрович
Заглавие : Особенности магнетосопротивления двухслойного монокристаллического манганита La1,4Sr1,6Mn2O7
Коллективы : Сибирский молодежный семинар по высокотемпературной сверхпроводимости и физике наноструктур – ОКНО 2014 (X; 13 - 14 ноября 2014 г.; Новосибирск)
Место публикации : Вестник НГУ. Физика: Новосибирский государственный университет, 2015. - Т. 10, Вып. 1. - С. 63-66. - ISSN 1818-7994
Примечания : Библиогр.: 8
Ключевые слова (''Своб.индексиров.''): манганиты лантана--положительное магнетосопротивление--manganite--positive magnetoresistance
Аннотация: Представлены результаты исследования магнетосопротивления на двухслойном монокристаллическом манганите лантана La1,4Sr1,6Mn2O7 при пропускании транспортного тока вдоль оси с ( j ‖ c ) и приложении внешнего магнитного поля H ‖ j и H ⊥ j. В монокристалле La1,4Sr1,6Mn2O7 в случае, когда H ⊥ j, помимо присущего всем замещенным манганитам лантана отрицательного магнетосопротивления в температурном диапазоне T 60 K, обнаружен эффект положительного магнетосопротивления. Механизм возникновения данного эффекта принципиально отличается от эффекта колоссального магнетосопротивления, присущего всем манганитам лантана. Мы считаем, что появление положительного магнетосопротивления вызвано спин-зависимым туннелированием носителей между марганец-кислородными бислоями, при данной конфигурации «магнитное поле - ток», и может быть объяснено особенностями магнитной структуры данных составов.We investigate magnetoresistance of single-crystal bilayer lanthanum manganite La1.4Sr1.6Mn2O7 at a transport current flowing along the crystal c axis and in external magnetic fields applied parallel to the crystal c axis or ab plane. It is demonstrated that the La1.4Sr1.6Mn2O7 manganite exhibits the positive magnetoresistance effect in the magnetic field applied in the ab plane of the sample at the temperatures T 60 K. The mechanism of this effect is shown to be fundamentally different from the colossal magnetoresistance effect typical of lanthanum manganites. The positive magnetoresistance originates from spin-dependent tunneling of carriers between the manganese-oxygen bilayers and can be explained by features of the magnetic structure of the investigated compounds.
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