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 Найдено в других БД:Каталог книг и брошюр библиотеки ИФ СО РАН (38)Каталог журналов библиотеки ИФ СО РАН (2)
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Общее количество найденных документов : 80
Показаны документы с 1 по 20
1.

A novel Mn4+-activated fluoride red phosphor Cs30(Nb2O2F9)9(OH)3·H2O:Mn4+ with good waterproof stability for WLEDs/Y. Chen, F. Liu, Z. Zhang [et al.] // Journal of Materials Chemistry C, 2022. т.Vol. 10,N Is. 18.-С.7049-7057
2.

Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect/D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Materials Science in Semiconductor Processing, 2021. т.Vol. 126.- Ст.105663
3.

Aliovalent substitution toward reinforced structural rigidity in Ce3+-doped garnet phosphors featuring improved performance/T. Hu [et al.] // Journal of Materials Chemistry C, 2019. т.Vol. 7,N Is. 46.-С.14594-14600
4.

Lukyanenko A. V. Alternative technology for creating nanostructures using Dip Pen Nanolithography/A. V. Lukyanenko, T. E. Smolyarova // Semiconductors, 2018. т.Vol. 52:25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia),N Is. 5.-С.636-638
5.

Atomic layer deposition ZnO on porous Al2O3 nanofibers film/A. S. Voronin, A. N. Masiygin, M. S. Molokeev, S. V. Khartov // Journal of Physics: Conference Series, 2020. т.Vol. 1679,N Is. 2.- Ст.022072
6.

ERUKHIMOV M. S. CARRIER ENERGY FLUCTUATION SHIFT IN WIDE-GAP ANTIFERROMAGNETIC SEMICONDUCTORS/M. S. ERUKHIMOV, S. G. OVCHINNIKOV // FIZIKA TVERDOGO TELA:MEZHDUNARODNAYA KNIGA, 1986. т.Vol. 28,N Is. 8.-С.2306-2309
7.

Gavrichkov V. A. Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density/V. A. Gavrichkov, S. G. Ovchinnikov // PHYSICS OF THE SOLID STATE:AMER INST PHYSICS, 1999. т.Vol. 41,N Is. 1.-С.59-66
8.

Characterization of LSMO/C60 spinterface by first-principle calculations/E. A. Kovaleva [et al.] // Organic Electronics: physics, materials, applications:Elsevier, 2016. т.Vol. 37.-С.55-60
9.

Collective Spin Glass State in Nanoscale Particles of Ferrihydrite/S. V. Stolyar, R. N. Yaroslavtsev, V. P. Ladygina [et al.] // Semiconductors, 2020. т.Vol. 54,N Is. 12.-С.1710-1712
10.

Colossal magnetoresistance of FexMn1-xS magnetic semiconductors/G. A. Petrakovskii [et al.] // JETP Letters, 1999. т.Vol. 69,N Is. 12.-С.949-953
11.

Aplesnin S. S. Conductivity of HoxMn1-xS magnetic semiconductors with orbital ordering/S. S. Aplesnin, M. N. Sitnikov // Internnational conference "Spin physics, spin chemistry, and spin technology", 2015.-С.47
12.

Dip-Pen Nanolithography method for fabrication of biofunctionalized magnetic nanodiscs applied in medicine/T. E. Smolyarova [et al.] // Semiconductors, 2018. т.Vol. 52:25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia),N Is. 5.-С.675-677
13.

Alekseev K. N. Direct-current generation due to wave mixing in semiconductors/K. N. Alekseev, M. V. Erementchouk, F. V. Kusmartsev // Europhysics Letters, 1999. т.Vol. 47,N Is. 5.-С.595-600
14.

Disorder- and correlation-induced charge carriers localization in oxyborate MgFeBO4, Mg0.5Co0.5FeBO4, CoFeBO4 single crystals/Y. V. Knyazev [et al.] // Journal of Alloys and Compounds:Elsevier Science, 2015. т.Vol. 642.-С.232-237
15.

GAVRICHKOV V. A. DISTORTION OF A COMPLEX DEFECT WITH A WEAK BINDING/V. A. GAVRICHKOV // SEMICONDUCTORS:AMER INST PHYSICS, 1993. т.Vol. 27,N Is. 10.-С.921-924
16.

KARYAGIN V. V. DRAG THERMOELECTRIC-POWER OF A TWO-DIMENSIONAL ELECTRON-GAS IN A GAAS-GAAIAS HETEROSTRUCTURE/V. V. KARYAGIN, I. I. LYAPILIN, V. V. DYAKIN // SOVIET PHYSICS SEMICONDUCTORS-USSR:AMER INST PHYSICS, 1988. т.Vol. 22,N Is. 8.-С.954-955
17.

Romanova O. B. Effect of electron and hole doping on the transport characteristics of chalcogenide systems/O. B. Romanova, S. S. Aplesnin, L. V. Udod // Physics of the Solid State, 2021. т.Vol. 63,N Is. 5.-С.754-757
18.

Effect of epitaxial alignment on electron transport from quasi-two-dimensional iron silicide α-FeSi2 nanocrystals into p-Si(001)/I. A. Tarasov [et al.] // Semiconductors, 2018. т.Vol. 52:25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia),N Is. 5.-С.654-659
19.

Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation/I. A. Tambasov [et al.] // Semiconductors:MAIK Nauka-Interperiodica / Springer, 2014. т.Vol. 48,N Is. 2.-С.207-211
20.

Effect of Heat Treatment on the Stability of Nanosized (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 Multilayers/I. V. Babkina, M. N. Volochaev, O. V. Zhilova [et al.] // Bulletin of the Russian Academy of Sciences: Physics, 2020. т.Vol. 84,N Is. 9.-С.1100-1103
 

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