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    Аверьянов, Евгений Михайлович.
    Новые методы исследования ориентационного порядка одноосных молекулярных пленок на основе оптических данных / Е. М. Аверьянов // Жидк. кристаллы и их практич. использ. - 2020. - Т. 20, № 1. - С. 41-46 ; Liq. Cryst. Appl., DOI 10.18083/LCAppl.2020.1.41. - Библиогр.: 7 . - ISSN 1991-3966
   Перевод заглавия: New methods for studying the orientation order of uniaxial molecular films on the base of optical data
Кл.слова (ненормированные):
тонкие молекулярные пленки -- органические полупроводники -- PTCDA -- ориентационный порядок -- эффекты локального поля -- molecular thin films -- organic semiconductors -- PTCDA -- orientation order -- local-field effects
Аннотация: Установлена связь компонент ε(1,2)j(ω) диэлектрической функции εj(ω) = ε1j(ω) + iε2j(ω) для одноосной молекулярной пленки в области изолированной полосы поглощения света, поляризованного вдоль (j = ||) и нормально (j = ⊥) оптической оси пленки, с параметром ориентационного порядка S дипольных моментов молекулярных переходов, отвечающих данной полосе поглощения. Развиты новые методы определения S, подтвержденные для пленки органического полупроводника PTCDA нанометровой толщины с известными зависимостями ε(1,2)j(ω) в областях прозрачности и низкочастотного электронного поглощения. Показано влияние ориентационного порядка и анизотропии динамических диполь-дипольных межмолекулярных взаимодействий (эффектов локального поля) на положение максимумов полос ε2j(ω).
The components ε(1,2)j(ω) of the dielectric function εj(ω) = ε1j(ω) + iε2j(ω) for uniaxial molecular film in the region of an isolated absorption band of the light polarized along (j = ||) and across (j = ⊥) the film optical axis were considered. The connection of the components with the orientation order parameter S of the dipole moments of molecular transitions corresponding to a given absorption band was established. New methods for determining S are developed. They are confirmed for the organic semiconductor PTCDA film of nanoscale thickness with the known dependences ε(1,2)j(ω) in the transparency and low-frequency electron absorption regions. The effect of the orientation order and anisotropy of dynamic dipole-dipole intermolecular interactions (local-field effects) on the maxima position of the ε2j(ω) bands was shown.

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Держатели документа:
Институт физики им. Л. В. Киренского, ФИЦ КНЦ СО РАН, Академгородок, 50, строение № 38, 660036 Красноярск, Россия

Доп.точки доступа:
Aver'yanov, E. M.

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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides / S. S. Aplesnin [et al.] // J. Exp. Theor. Phys. - 2008. - Vol. 106, Is. 4. - P. 765-772, DOI 10.1134/S1063776108040158. - Cited References: 39 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
GIANT VOLUME MAGNETOSTRICTION
   COLOSSAL MAGNETORESISTANCE
   MAGNETIC SEMICONDUCTORS
   ELECTRICAL-PROPERTIES
   ROOM-TEMPERATURE
   ALPHA-MNS
   SPINTRONICS
   TRANSITION
   FEXMN1-XS
   FIELDS
Кл.слова (ненормированные):
Coulomb interactions -- Current voltage characteristics -- Electromotive force -- Ferromagnetism -- Magnetic susceptibility -- Magnetization -- Thermoelectricity -- Transport properties -- Charge susceptibility -- External magnetic fields -- Temperature intervals -- Thermoelectromotive force -- Cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0 <= x <= 0.4). Anomalies in the transport properties of these compounds have been found in the temperature intervals Delta T-1 = 200-270 K and Delta T-2 = 530-670 K and at T-3 similar to T-N. The temperature dependences of the magnetic susceptibility, magnetization, and resistivity, as well as the current-voltage characteristics, exhibit hysteresis. In the domain of magnetic ordering at temperatures below the Neel temperature (TN), the anti ferromagnetic CoxMn1 - xS sulfides possess a spontaneous magnetic moment that is explained using a model of the orbital ordering of electrons in the t(2g) bands. The influence of the cobalt-ion-induced charge ordering on the transport and magnetic properties of sulfides has been studied. The calculated values of the temperatures corresponding to the maxima of charge susceptibility, which are related to a competition between the on-site Coulomb interaction of holes in various subbands and their weak hybridization, agree well with the experimental data.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Velikanov, D. A.
Balaev, A. D.
Balaev, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Aplesnin, S. S.
Bandurina, O. N.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Yanushkevich, K. I.
Galyas, A. I.
Demidenko, O. F.] Natl Acad Sci, Joint Inst Solid State & Semicond Phys, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Joint Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, Minsk 220072, Belarus

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Yanushkevich, K. I.; Galyas, A. I.; Demidenko, O. F.; Bandurina, O. N.
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Bikbaev, R. G.
Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons / R. G. Bikbaev, S. Ya Vetrov, I. V. Timofeev // J. Opt. Soc. Am. B. - 2019. - Vol. 36, Is. 10. - P. 2817-2823, DOI 10.1364/JOSAB.36.002817. - Cited References: 44. - The reported study was funded by RFBR according to the research project No 18-32-00053 and financial support RFBR and MOST according to the research project No 19-52-52006. . - ISSN 0740-3224
Кл.слова (ненормированные):
Aluminum oxide -- II-VI semiconductors -- Indium compounds -- Infrared devices -- Optical films -- Phonons -- Photons -- Plasmons -- Q factor measurement -- Tin oxides -- Transfer matrix method -- Transparent conducting oxides -- Zinc oxide
Аннотация: We demonstrate the possibility of using transparent conducting oxides [aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium tin oxide (ITO)] to form Tamm plasmon polaritons in the near-infrared spectral range where the permittivity of oxides is near zero. The spectral properties of the structures are investigated in the framework of the temporal coupled-mode theory and confirmed by the transfer matrix method. It is found that in the critical coupling conditions, the maximal Q-factor of a Tamm plasmon polariton is achieved when a photonic crystal is conjugated with the AZO film, while at the conjugation with the ITO films, the broadest spectral line is obtained. The sensitivity of the wavelength and spectral width of the Tamm plasmon polariton to changes in the oxide film thickness, bulk concentration of a dopant, and angle of incidence is demonstrated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Vetrov, S. Ya.; Ветров, Степан Яковлевич; Timofeev, I. V.; Тимофеев, Иван Владимирович; Бикбаев, Рашид Гельмединович
}
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Mikhaleva, N. S.
Theoretical investigation of NiI2 based bilayer heterostructures / N. S. Mikhaleva, M. A. Visotin, Z. I. Popov // Key Eng. Mater. - 2019. - Vol. 806 KEM. - P. 10-16, DOI 10.4028/www.scientific.net/KEM.806.10. - Cited References: 38. - N. S. M. acknowledges the financial support of the RFBR project No. 16-32-60003 mol_a_dk.
Кл.слова (ненормированные):
2D semiconductors -- Ab initio calculations -- Heterostructures -- NiI2 -- Transition metal dichalcogenides
Аннотация: The electronic structure of nickel iodide monolayer in NiI2/ScX2 (X = S, Se and Te) and NiI2/NiTe2 heterostructures was investigated by density functional theory (DFT). The spin-asymmetric semiconducting behavior of NiI2 monolayer in these interfaces was observed. The width of the band gap of the NiI2 monolayer practically does not change in heterostructures and remains at the level of 1.7 and 3.0 eV for minor and major spin channels, respectively. The NiI2 layer can be p-doped by stacking with ScX2 dichalcogenides. On the contrary, charge transfer (~0.01 |e| per f.u.) from NiTe2 leads to n-doping of NiI2. As a result, the Fermi level shifts up to the area of NiI2 conduction band with spin down carriers only, which gives prospects of using this material in spin filter applications. The electronic structure of NiI2/ScTe2 under isotropic deformation in the plane remains the same under tension and compression within 5%, except for a small change in the band gap in the composite layers of NiI2 within 25%. This allows one to conclude about the stability of the electronic properties under deformations, which gives possibility to use the heterostructures in flexible electronics devices. © 2019 Trans Tech Publications Ltd, Switzerland

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Держатели документа:
Siberian Federal University, av. Svobodny 79, Krasnoyarsk, 660041, Russian Federation
L.V. Kirensky Institute of Physics, Akademgorodok 50, Krasnoyarsk, 660036, Russian Federation
National University of Science and Technology “MISiS”, Leninsky pr. 4, Moscow, 119049, Russian Federation

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Popov, Z. I.; Попов, Захар Иванович; Asian School-Conference on Physics and Technology of Nanostructured Materials(4 ; 2018 ; Sept. ; 23-28 ; Vladivostok)
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Erukhinov, M. S.
The S-D(f)-hybridization effect on light-absorption in impurity magnetic semiconductors / M. S. Erukhinov // Fiz. Tverd. Tela. - 1980. - Vol. 22, Is. 6. - P. 1660-1665. - Cited References: 12 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

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The magnetoelastic effect in CoxMn1-xS solid solutions / S. S. Aplesnin [et al.] // Solid State Commun. - 2010. - Vol. 150, Is. 13-14. - P. 564-567, DOI 10.1016/j.ssc.2010.01.009. - Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a. . - ISSN 0038-1098

РУБ Physics, Condensed Matter
Рубрики:
YVO3 SINGLE-CRYSTAL
   SPIN-STATE
   TRANSITION
   TRANSPORT
   PHYSICS
   LACOO3
Кл.слова (ненормированные):
Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Galvanomagnetic effects -- Thermal expansion -- Semiconductors -- X-ray scattering -- Coefficient of thermal expansion -- Magnetoelastic effects -- Orbital ordering -- Temperature hysteresis -- Temperature range -- Zero magnetic fields -- Crystallization -- Electric resistance -- Magnetic field effects -- Magnetoresistance -- Manganese -- Manganese compounds -- Neon -- Organic polymers -- Scattering -- Semiconductor quantum dots -- Solid solutions -- Solidification -- Thermal stress -- X ray scattering -- Thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H < 0.1 T and at T < 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.

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Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.
Har'kov, A. M.] MF Reshetneva Aircosm Siberian State Univ, Krasnoyarsk 660014, Russia
[Gorev, M. V.
Balaev, A. D.
Eremin, E. V.
Bovina, A. F.] Russian Acad Sci, KSC Siberian Branch, Ctr Shared, Krasnoyarsk 660036, Russia
КНЦ СО РАН
M.F. Reshetneva Aircosmic Siberian State University, Krasnoyarsk, 660014, Russian Federation
Center of shared using KSC Siberian branch, Russian Academy Science, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Har'kov, A. M.; Gorev, M. V.; Горев, Михаил Васильевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Eremin, E. V.; Еремин, Евгений Владимирович; Bovina, A. F.; Бовина, Ася Федоровна
}
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Synthesis of ferromagnetic germanides in 40Ge/60Mn films: Magnetic and structural properties / V. G. Myagkov [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 167-172, DOI 10.4028/www.scientific.net/SSP.215.167. - Cited References: 28 . - ISSN 978-30383. - ISSN 1662-9779
Кл.слова (ненормированные):
Diluted semiconductors -- Manganese germanides -- Solid-state reactions -- Spinodal decomposition
Аннотация: Solid-state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy and magnetic measurements. The films have a nominal atomic ratio Ge:Mn = 40:60 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~120 °C, the ferromagnetic Mn5Ge phase is the first phase to form at the 40Ge/60Mn interface. Increasing the annealing temperature to 500 °C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 360 K and magnetization MS ~ 140-200 emu/cc at room temperature. Analysis of X-ray diffraction patterns and the photoelectron spectra suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn5Ge3 lattice and the formation of the Nowotny phase Mn5GeXCxOy. The initiation temperature (~120 °C) of the Mn5Ge3 phase is the same both for solid-state reactions in Ge/Mn films, as well as for phase separation in GexMn1-x diluted semiconductors. We conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn1-x diluted semiconductors. © (2014) Trans Tech Publications, Switzerland.

Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Myagkov, V. G.; Мягков, Виктор Григорьевич; Matsunin, A. A.; Мацынин, Алексей Александрович; Mikhlin, Y. L.; Михлин, Юрий Леонидович; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)
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Synthesis and magnetic and electrical study of TmxMn1–xS solid solutions / O. B. Romanova [et al.] // Bull. Russ. Acad. Sci. Phys. - 2016. - Vol. 80, Is. 6. - P. 679-681, DOI 10.3103/S1062873816060265. - Cited References: 12 . - ISSN 1062-8738
Кл.слова (ненормированные):
Activation energy -- Magnetism -- Temperature distribution -- Antiferromagnetic semiconductors -- Electrical studies -- FCC lattice -- Magnetic transitions -- NaCl type -- Temperature dependence of resistivities -- Manganese
Аннотация: New antiferromagnetic semiconductor compounds TmxMn1–xS (0 ≤ x ≤ 0.15) with an NaCl-type FCC lattice are synthesized, and their structural, magnetic, and electrical properties are investigated at temperatures of 80–1100 K in magnetic fields of up to 10 kOe. Anomalies in the temperature dependence of resistivity in the region of magnetic transition are observed. The activation energy of the synthesized compounds is found and shown to grow along with the concentration of a substitute.

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Публикация на русском языке Синтез, магнитные и электрические исследования твердых растворов TmxMn1-xS [Текст] / О. Б. Романова [и др.] // Изв. РАН. Сер. физ. - 2016. - Т. 80 № 6. - С. 748

Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Yanushkevich, K. I.; Sokolov, V. V.; Соколов В.В.
}
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10.

BORISYOUK, V. A.
SUPERRADIATIVE PHASE-TRANSITIONS IN SEMICONDUCTORS AND SEMIMETALS / V. A. BORISYOUK // Zhurnal Eksperimentalnoi Teor. Fiz. - 1990. - Vol. 97, Is. 6. - P. 1882-1891. - Cited References: 37 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

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11.

BATIYEV, E. G.
SUPERCONDUCTIVITY IN MULTI-VALLEY SEMICONDUCTORS / E. G. BATIYEV, V. A. BORISYOUK // Zhurnal Eksperimentalnoi Teor. Fiz. - 1986. - Vol. 90, Is. 2. - P. 558-568. - Cited References: 13 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

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Доп.точки доступа:
BORISYOUK, V. A.
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12.

    Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures / I. A. Bondarev [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 14. - P. 88-92, DOI 10.1134/S1063782619140045. - Cited References: 27. - The work was supported by the Russian Foundation for Basic Research project no. 17-02-00302. . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Исследование фотонапряжения в МДП структуре Mn/SiO2/n-Si при криогенных температурах
Рубрики:
NANOSTRUCTURE DEVICES
Кл.слова (ненормированные):
lateral photovoltage -- transverse photovoltage -- MOS structures -- low temperature -- space-charge region
Аннотация: Lateral photovoltaic effect in metal/insulator/semiconductor hybrid structures is a significant phenomenon for spintronics, as it establishes the interplay between the optical irradiation, electronic transport and spin-dependent properties of carriers. In present work we investigated photovoltaic phenomena in Mn/SiO2/n-Si MOS structure. The sample was prepared on a single-crystal n-Si (phosphorus-doped) substrate. The SiO2 layer with thickness of 1.5 nm was formed on the substrate surface by a chemical method. Manganese film with thickness of 15nm was deposited by thermal evaporation in ultrahigh vacuum in the “Angara” chamber. It was observed that at T < 45 K the values of lateral and transversal photovoltage nonmonotonically depend on the temperature and such dependences show complex behavior. Features of the photovoltage dependence on temperature, in the region above 20 K are explained by the change of carriers’ mobility and the competition between carriers’ drift velocity in the electric field of the space-charge region and their diffusion rate in the transverse and lateral directions. Below 20 K, the main contribution into the photovoltage is given by hot electrons injected from surface states levels to the conduction band. A strong magnetic field influence on the photovoltage below 20 K was observed. We associate it with the Lorenz force effect on the hot electrons, although we also don’t exclude the presence of mechanisms caused by spindependent scattering and recombination of hot electrons at occupied donor states.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036 Russia
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041 Russia

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volkov, N. V.; Волков, Никита Валентинович
}
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13.

    Structure and Magnetic Properties of the FeCo–C Films Reduced by Carbohydrates / E. A. Denisova, L. A. Chekanova, S. V. Komogortsev [et al.] // Semiconductors. - 2020. - Vol. 54, Is. 14. - P. 1840-1842, DOI 10.1134/S1063782620140079. - Cited References: 9. - This work was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 18-42-240006 Nanomaterials with magnetic properties determined by the topological features of the nanostructure) . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Структура и магнитные свойства пленок FeCo–C, восстановленных углеводами
Кл.слова (ненормированные):
FeCo–C alloy -- electroless deposition -- magnetic properties
Аннотация: The structural and magnetic properties of FeCo–C films produced by electroless plating with differentcarbohydrates as reducing agents have been investigated. The surface morphology and coercivities of FeCo–C films are dependent on the iron content and type of reducing agent. The local magnetic anisotropy field value increases with a decrease in Fe content. For all systems, deposits with good soft magnetic properties were obtained, with coercivities less than 12 Oe and saturation magnetizations close to 240 emu/g for FeCo–C film with 30% cobalt. The best soft magnetic properties corresponded to the deposits with bcc structure and grain sizes less than 20 nm.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, 660041 Russia
Federal Research Center “Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk, Russia

Доп.точки доступа:
Denisova, E. A.; Денисова, Елена Александровна; Chekanova, L. A.; Чеканова, Лидия Александровна; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Nemtsev, I. V.; Iskhakov, R. S.; Исхаков, Рауф Садыкович
}
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14.

Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films / M. N. Volochaev [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 11. - P. 1465-1471, DOI 10.1134/S106378261911023X. - Cited References: 16. - This study was carried out in the framework of the state assignment of the Ministry of Science and Higher Education of the Russian Federation, project no. 3.1867.2017/4.6. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter
Рубрики:
HETEROSTRUCTURES
Кл.слова (ненормированные):
thin films -- multilayers -- oxide semiconductors -- hopping conductivity -- thermal stability
Аннотация: (ZnO/SiO2)25 thin-film multilayers consisting of nanocrystalline ZnO layers and amorphous SiO2 spacers with a bilayer thickness from 6 to 10 nm are synthesized in a single deposition process. An analysis of the temperature dependences of the electrical resistivity of (ZnO/SiO2)25 thin films shows that, in the temperature range of 77–300 K, the dominant conductivity mechanism successively changes from hopping conductivity with a variable hopping length in a narrow energy band near the Fermi level at temperatures of 77–250 K to thermally activated impurity conductivity around room temperature. Using the obtained temperature dependences of the electrical resistivity, the effective density of localized states at the Fermi level and the activation energy of impurity levels are estimated. The effect of heat treatment on the structure and electrical properties of the synthesized films is examined. It is established that in (ZnO/SiO2)25 thin-film systems at temperatures of 580–600°C, the ZnO and SiO2 layers chemically interact, which is accompanied by destruction of the multilayer structure and formation of the Zn2SiO4 compound with a tetragonal structure (sp. gr. I-42d).

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Публикация на русском языке

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk, Russia.
Voronezh State Tech Univ, Voronezh 394026, Russia.

Доп.точки доступа:
Volochaev, M. N.; Волочаев, Михаил Николаевич; Kalinin, Yu E.; Kashirin, M. A.; Makagonov, V. A.; Pankov, S. Yu; Bassarab, V. V.; Ministry of Science and Higher Education of the Russian Federation [3.1867.2017/4.6]
}
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15.

    Structural, electrical and magnetic study of manganites Pr0.6Sr0.4MnO3 thin films / D. S. Neznakhin [et al.] // J. Phys. Conf. Ser. - 2016. - Vol. 690, Is. 1, DOI 10.1088/1742-6596/690/1/012002. - Cited References: 20. - The work was supported partly by RFBR, grant №14-02-01211, Grant of President of Russian Federation №NSh-2886.2014.2, and by The Ministry of Education and Science of the Russian Federation, project №2582. . - ISSN 1742-6588
   Перевод заглавия: Структурные, электрические и магнитные исследования тонких пленок манганита Pr0.6Sr0.4MnO3
Кл.слова (ненормированные):
Magnetic materials -- Magnetization -- Manganese oxide -- Nanoelectronics -- Nanostructures -- Oxide films -- Field dependence -- Magnetization temperature curves -- Polycrystalline phase -- Polycrystalline pr -- Resistivity dependence -- Shape characteristics -- Structural parameter -- Zero-field cooling -- Thin films
Аннотация: Thin polycrystalline Pr0.6Sr0.4MnO3 films were grown on the Y stabilized zirconium oxide substrates by magnetron sputtering using RF power and off-axis sputtering scheme with double cathodes. Only one polycrystalline phase with structural parameters consistent with that for the corresponding bulk sample was revealed in the films. Electric resistivity dependence on temperature demonstrates the shape characteristic for the substances with the Mott transition. The difference between magnetization temperature curves measured in the zero field cooling and field cooling modes was revealed. Magnetization field dependences were presented by the hysteresis loops changing their form with temperature. © Published under licence by IOP Publishing Ltd.

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Доп.точки доступа:
Neznakhin, D. S.; Samoshkina, Yu. E.; Самошкина, Юлия Эрнестовна; Molokeev, M. S.; Молокеев, Максим Сергеевич; Semenov, S. V.; Семёнов, Сергей Васильевич; Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics(St. Petersburg)(17 ; 23 - 27 Nov. 2015)
}
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16.

Structural and optical properties of thin In2O3 films produced by autowave oxidation / I. A. Tambasov [et al.] // Semiconductors. - 2013. - Vol. 47, Is. 4. - P. 569-573DOI 10.1134/S1063782613040210
Аннотация: Cubic-phase In2O3 films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20–40 nm. The optical and electrical properties are studied for In2O3 films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 × 10–2Ω cm.

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Публикация на русском языке Структурные и оптические свойства тонких пленок In2O3, полученных автоволновым окислением // Физика и техника полупроводников. - 2013. - Т. 47, Вып. 4. - С. 546-550

Держатели документа:
Russian Acad Sci, Kirenskii Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Russian Acad Sci, Inst Chem & Chem Technol, Siberian Branch, Krasnoyarsk 660049, Russia
Joint Stock Co Academician MF Reshetnev Informat, Zheleznogorsk 662972, Russia

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Myagkov, V. G.; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Nemtsev, I. V.; Немцев, Иван Васильевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Mihlin, J. L.; Михлин, Юрий Леонидович; Maksimov, I. A.; Максимов И. А.; Ivanov, V. V.; Иванов В. В.; Balashov, S. V.; Балашов С. В.; Karpenko, D. S.; Карпенко Д. С.
}
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17.

Spin fluctuation effect on the absorption-spectrum of magnetic semiconductors / M. S. ERUKHIMOV [и др.] // Fiz. Tverd. Tela. - 1985. - Vol. 27, Is. 12. - P. 3628-3634. - Cited References: 16 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
ERUKHIMOV, M. S.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Gavrichkov, V. A.; Гавричков, Владимир Александрович; PONOMAREV, V. I.
}
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18.

LOSEVA, G. V.
SPECIFIC FEATURES OF ELECTRIC CONDUCTION IN ALPHA-MNXS ANTIFERROMAGNETIC SEMICONDUCTORS / G. V. LOSEVA, S. G. OVCHINNIKOV, L. I. RYABINKINA // Fiz. Tverd. Tela. - 1986. - Vol. 28, Is. 7. - P. 2048-2052. - Cited References: 12 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

WOS
Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; RYABINKINA, L. I.
}
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19.

Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase / V. G. Myagkov [et al.] // JETP Letters. - 2010. - Vol. 92, Is. 10. - P. 687-691, DOI 10.1134/S0021364010220108. - Cited References: 32. - This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 2.1.1/4399, the program "Development of the Research Potential of Higher Education in 2009-2010." . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
PERPENDICULAR ANISOTROPY
   EPITAXIAL-GROWTH
   GA
   SEMICONDUCTORS
   SPINTRONICS
   CRYSTAL
   ALLOYS
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 phase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.

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Держатели документа:
[Myagkov, V. G.
Zhigalov, V. S.
Bykova, L. E.
Patrin, G. S.
Velikanov, D. A.] Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
[Myagkov, V. G.
Zhigalov, V. S.
Solov'ev, L. A.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Solov'ev, L. A.] Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia
[Patrin, G. S.
Velikanov, D. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
ИХХТ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation
Institute of Chemistry and Chemical Technology, Siberian Branch, Russian Academy of Sciences, ul. Karla Marksa 43, Krasnoyarsk 660049, Russian Federation
Siberian Federal University, Svobodnyi pr. 79, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Solov'ev, L. A.; Соловьев, Леонид Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич
}
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20.

Solid state synthesis and characterization of ferromagnetic nanocomposite Fe-In2O3 thin films / V. G. Myagkov [et al.] // J. Alloys Compd. - 2014. - Vol. 612. - P. 189-194, DOI 10.1016/j.jallcom.2014.05.176. - Cited References: 56 . - ISSN 0925-8388. - ISSN 1873-4669

РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy & Metallurgical Engineering
Рубрики:
HIGH-TEMPERATURE FERROMAGNETISM
   PHASE-FORMATION
   In2O
   OXIDE
   NANOPARTICLES
   CO
   SEMICONDUCTORS
   NANOCRYSTALS
   COMBUSTION
   SYSTEMS
Кл.слова (ненормированные):
Thermite reactions -- Reactive films -- Ferromagnetic nanocomposite films -- Transparent conducting oxides
Аннотация: We have successfully synthesized ferromagnetic Fe-In2O 3 nanocomposite thin films for the first time using the thermite reaction Fe2O3 + In = In2O3 + Fe. The initial In/Fe2O3 bilayers were obtained by the deposition of In layers on α-Fe2O3 films. The reaction occurs in a self-propagating mode in a homogeneous thermal film plane field at heating rates above 20 K/s and at temperatures above initiation temperature T[[d]]in[[/d]] ~ 180 °C. At heating rates lower than 20 K/s the mixing of the In and Fe2O3 layers occurs across the whole In/Fe2O3 interface and the synthesis of the ferromagnetic α-Fe phase starts above the initiation temperature T[[d]]in[[/d]] = 180 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Mossbauer spectroscopy, transmission electron microscopy and magnetic measurements were used for phase identification and microstructure observation of the synthesized Fe-In2O3 samples. The reaction products contain (1 1 0) textured α-Fe nanocrystals with a diameter around 100 nm and surrounded by an In2O3 matrix. These results enable new efficient low-temperature methods for synthesizing ferromagnetic nanocomposite films containing ferromagnetic nanoclusters embedded in transparent conducting oxides. © 2014 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Bayukov, O. A.; Баюков, Олег Артемьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Mikhlin, Yu. L.; Volochaev, M. N.; Bondarenko, G. N.; Бондаренко, Галина Николаевна
}
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