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Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure / N. V. Volkov [et al.] // J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст. 65005, DOI 10.1088/0022-3727/42/6/065005. - Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS). . - ISSN 0022-3727

РУБ Physics, Applied

Кл.слова (ненормированные):
Colossal magnetoresistance -- Electric resistance -- Electronic structure -- Magnetic field effects -- Magnetoelectronics -- Manganese -- Manganites -- Oxide minerals -- Schottky barrier diodes -- Semiconductor junctions -- Silicides -- Tunnel junctions -- Tunnels -- Bottom layers -- Channel switching -- Conducting channels -- Conducting layers -- Current-driven -- Current-in-plane geometries -- Depletion layers -- Ferromagnetic state -- Layered structures -- Low-resistance contacts -- Magnetic tunnel junctions -- Magneto-transport properties -- Manganese silicides -- Manganite films -- New mechanisms -- Positive magnetoresistances -- Positive MR -- Potential barriers -- Spin-polarized -- Tunnel structures -- Voltage-current characteristics -- Current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Tsikalov, V. S.
Patrin, G. S.
Kim, P. D.] SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Patrin, G. S.] Siberian Fed Univ, Dept Phys, Krasnoyarsk 660041, Russia
[Seong-Cho, Yu
Kim, Dong-Hyun] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[Chau, Nguyen] Natl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam
ИФ СО РАН
Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036, Russian Federation
Department of Physics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea
Center for Materials Science, National University of Hanoi, 334 Nguyen Trai, Hanoi, Viet Nam

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tsikalov, V. S.; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. H.; Chau, N.; RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
}
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Current channel switching in the manganite-based multilayer structure / N. V. Volkov [et al.] // J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5, DOI 10.1088/1742-6596/200/5/052031 . - ISSN 1742-6588
Кл.слова (ненормированные):
Channel switching -- Current in planes -- Magnetic tunnel junction -- Magnetoresistive -- Manganese silicide -- Multilayer structures -- Optical radiations -- Potential barriers -- Lanthanum -- Magnetic fields -- Manganese -- Silicides -- Transport properties -- Tunnel junctions -- Manganese oxide
Аннотация: The transport properties of the structure La0.7Sr 0.3MnO3/depleted manganite layer/MnSi have been studied. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3 and MnSi layers by forming a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealed the effect of current channel switching between the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current, magnetic field, and optical radiation. Such switching is responsible for the features of the transport properties and the magnetoresistive and photovoltaic effects in the structure. © 2010 IOP Publishing Ltd.

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Держатели документа:
Kirensky Institute of Physics SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, 660041, Russian Federation
Chungbuk National University, Department of Physics, Cheongju, 361-763, South Korea

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. -H.; Chau, N.
}
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Characterization and magnetic properties of the iron silicides / S. G. Ovchinnikov, S. N. Varnakov, A. S. Fedorov [et al.] // Proceedings Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2011) / Asian School-Conference on Physics and Technology of Nanostructured Materials (2011 ; Aug. ; 22-29 ; Vladivostok, Russia), Азиатская школа-конференция по физике и технологии наноструктурированных материалов (1 ; 2011 ; авг. ; 21-28 ; Владивосток). - 2011

Доп.точки доступа:
Ovchinnikov, S.G.; Varnakov, S.N.; Fedorov, A.S.; Lyaschenko, S.A.; Yakovlev, I.A.; Asian School-Conference on Physics and Technology of Nanostructured Materials(2011 ; Aug. ; 22-29 ; Vladivostok, Russia); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(1 ; 2011 ; авг. ; 21-28 ; Владивосток)
}
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CEMS analysis of phase formation in nanostructured films (Fe/Si) 3 / S. N. Varnakov [et al.] // Solid State Phenomena. - 2011. - Vol. 168-169. - P. 277-280, DOI 10.4028/www.scientific.net/SSP.168-169.277 . - ISSN 1662-9779
Кл.слова (ненормированные):
interfaces metal/semiconductor -- magnetic silicides -- molecular beam epitaxy technology -- semiconductor and magnetic geterostructures
Аннотация: Determination of stable phases formed at the Fe/Si interface in (Fe/Si)n structure, grown by thermal evaporation in an ultrahigh vacuum system was performed using conversion electron Mossbauer spectroscopy (CEMS).

РИНЦ
Держатели документа:
Instituto de Ciencia de Materiales de Aragon,Departamento de Ciencia de Materiales e Ingenieria Metalurgica,CSIC-Universidad de Zaragoza
Instituto de Ciencia de Materiales de Aragon,Departamento de Fisica de la Materia Condensada,CSIC-Universidad de Zaragoza
Kirensky Institute of Physics,Siberian Division,Russian Academy of Sciences
Siberian Aerospace University

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Bartolomé, J.; Rubin, J.; Badia, L.; Bondarenko, G. V.; Бондаренко, Геннадий Васильевич; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg)
}
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Characterization of manganese and iron silicides by in situ spectral generalized magneto-optical ellipsometry / N. N. Kosyrev [et al.] // 7th Workshop on Ellipsometry : abstract book. - 2012. - P. . - 82
Аннотация: Dilute magnetic semiconductors (DMS) combine the electronic transport properties of semiconductors and memory characteristics of magnetic materials. The complementary properties of semiconductor and ferromagnetic material can manipulate both degrees of freedoms of electrons0 spins and charges for spintronic devices. In recent years, group IV(Ge,Si)-based DMSs attract considerable experimental effort due to the compatibility with mainstream silicon technology. In ourworkwe present the investigation of structural,magnetic and optical properties ofmanganese and iron silicides thin films on Si (100) substrate by in situ spectral generalizedmagneto-optical ellipsometry. Themeasurementswere performed by spectral and laser ellipsometers (“Spectroscan“ and “LEF-71“ respectively by Institute Semiconductors Physics SB RAS), optimized tomeasure not only traditional ellipsometric parameters, but also magneto-optical response of the sample. The magnetoellipsometers were integrated into the ultrahigh vacuum chambers of molecular beam epitaxy setup, which allowed to control the optical and magnetic properties of thin films directly in the growth process. As a result of the magneto-optical response analysis, it was found that iron and manganese silicides in magnetic phase were formed on the Si surface and by analysis of the ellipsometric parameters dependence on evaporation time the silicide nanoclusters were identified and their structural properties were found. The work was supported by project 4.1 of the OFN RAS, project 27.10 of the Presidium RAS, integration project22 of SB RAS and FEB RAS, and also the FCP NK-744P/6 .

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Доп.точки доступа:
Kosyrev, N. N.; Косырев, Николай Николаевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Lyashenko, S. A.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Workshop Ellipsometry (7 ; 2012 ; март ; 5-7 ; Leipzig, Germany)
}
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Determination of structural parameters of the Fe-Si-system by spectral ellipsometry method / S. A. Lyashchenko [et al.] // Physics Procedia. - 2012. - Vol. 23. - P. 49-52, DOI 10.1016/j-phpro.2011.01.013 . - ISSN 1875-3884
Кл.слова (ненормированные):
spectral ellipsometry -- silicides -- atomic force microscopic
Аннотация: Limitation of the thin homogeneous layers with sharp interfaces model for the structure Si(100)/FeSi2(grain) in solution the inverse problem of ellipsometry in the visible spectral range is shown. A new model of random distribution of thin disks for describing the real structure of the sample is designed. The results of the model optimization are confirmed by AFM.

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Доп.точки доступа:
Lyashchenko, S. A.; Лященко, Сергей Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Berezitskaya, E. P.; Alexandrova, G. A.; Vaituzin, O. P.; Asian School-Conference on Physics and Technology of Nanostructured Materials(2011 ; Aug. ; 21-28 ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(1 ; 2011 ; авг. ; 21-28 ; Владивосток)
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Morphological and compositional study at the Si/Fe interface of (Fe/Si) multilayer / L. Badia-Romano [et al.] // SPIN. - 2014. - Vol. 4, № 1. - P. 1440002DOI 10.1142/S2010324714400025
Кл.слова (ненормированные):
Fe-Si interlayer -- magnetic nanostructures -- Fe silicides -- reflectivity -- conversion electron Möossbauer spectroscopy
Аннотация: Diffusion and reaction of elements at the interfaces of nanostructured systems play an important role in controlling their physical and chemical properties for subsequent applications. (Fe/Si) nanolayers were prepared by thermal evaporation under ultrahigh vacuum onto a Si(100) substrate. A morphological characterization of these films was performed by combination of scanning transmission electron microscopy (STEM) and X-ray reflectivity (XRR). The compositional depth profile of the (Fe/Si) structures was obtained by angle resolved X-ray photoelectron spectroscopy (ARXPS) and hard X-ray photoelectron spectroscopy (HAXPES). Moreover, determination of the stable phases formed at the Si on Fe interfaces was performed using conversion electron Mössbauer spectroscopy. The Si/Fe interface thickness and roughness were determined to be 1.4 nm and 0.6 nm, respectively. A large fraction of the interface is composed of c-Fe1-xSi paramagnetic phase, though a minoritary ferromagnetic Fe rich silicide phase is also present.

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Доп.точки доступа:
Badía-Romano, L.; Rubin, J.; Bartolomé, F.; Bartolome, J.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S.N.; Варнаков, Сергей Николаевич; Magen, C.; Rubio-Zuazo, J.; Castro, G. R.
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Initial growth stages of manganese films on the Si(100)2 x 1 surface / S. N. Varnakov [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 2. - P. 380-384, DOI 10.1134/S1063783414020310. - Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Ministry of Education and Science of the Russian Federation (agreement 14V37.21.1276), and the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265). . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
PHOTOELECTRON-SPECTROSCOPY
   ROOM-TEMPERATURE
   SILICIDES
   SILICON
Аннотация: Initial growth stages of manganese films on the Si(100)2 × 1 surface at room temperature have been investigated using high-energy-resolution photoelectron spectroscopy, and the dynamics of the variation in their phase composition and electronic structure with the coverage growth has been revealed. It has been shown that the interfacial manganese silicide and the film of the solid solution of silicon in manganese are sequentially formed under these conditions on the silicon surface. The growth of the metal manganese film starts after the deposition of ~0.9 nm Mn. Segregation of silicon on the film surface is observed in the range of coverages up to 1.6 nm Mn.

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Публикация на русском языке Начальные стадии роста пленок марганца на поверхности Si(100)2x1 [Текст] / С. Н. Варнаков [и др.] // Физ. тверд. тела. - 2014. - Т. 56 Вып. 2. - С. 375-379

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Gomoyunova, M. V.; Grebenyuk, G. S.; Zabluda, V. N.; Заблуда, Владимир Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Pronin, I. I.; Russian-German Laboratory at HZB BESSY; Ministry of Education and Science of the Russian Federation [14V37.21.1276]; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]
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Solid-phase synthesis of manganese silicides on the Si(100)2 x 1 surface / S. N. Varnakov [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 4. - P. 812-815, DOI 10.1134/S1063783414040337. - Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265), the Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools (grant no. NSh-1044.2012.2), and the Integration Project No. 85 of the Siberian and Ural Branches of the Russian Academy of Sciences. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
PHOTOELECTRON-SPECTROSCOPY
GROWTH
FILMS
Аннотация: The solid-phase synthesis of manganese silicides on the Si(100)2 × 1 surface coated at room temperature by a 2-nm-thick manganese film has been investigated using high-energy-resolution photoelectron spectroscopy with synchrotron radiation. The dynamics of variation of the phase composition and electronic structure of the near-surface region with increasing sample annealing temperature to 600°C, has been revealed. It has been shown that, under these conditions, a solid solution of silicon in manganese, metallic manganese monosilicide MnSi, and semiconductor silicide MnSi1.7 are successively formed on the silicon surface. The films of both silicides are not continuous, with the fraction of the substrate surface occupied by them decreasing with increasing annealing temperature. The binding energies of the Si 2p and Mn 3p electrons in the compounds synthesized have been determined.

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Публикация на русском языке Твердофазный синтез силицидов марганца на поверхности Si(100)2x1 [Текст] / С. Н. Варнаков [и др.] // Физ. тверд. тела. - 2014. - Т. 56 Вып. 4. - С. 779-782

Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Gomoyunova, M. V.; Grebenyuk, G.S .; Zabluda, V. N.; Заблуда, Владимир Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Pronin, I. I.; Russian-German Laboratory at HZB BESSY; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]; Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools [NSh-1044.2012.2]; Siberian Branch of the Russian Academy of Sciences [85]; Ural Branch of the Russian Academy of Sciences [85]
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10.

    Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides / I. S. Sandalov [et al.] // Acta Crystallogr. A. - 2015. - Vol. 71, Supplement. - Ст. s362, DOI 10.1107/S2053273315094590 . - ISSN 0108-7673
   Перевод заглавия: Квазичастичная зонная структура, спектральные веса и степень локализации d-электронов в силицидах железа
Кл.слова (ненормированные):
strongly correlated electrons -- delocalization

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Доп.точки доступа:
Sandalov, I. S.; Сандалов, Игорь Семёнович; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; European Crystallographic Meeting(29 ; 2015 ; Aug. ; 23-28 ; Rovinj, Croatia)
}
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