Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Найдено в других БД:

Каталог книг и брошюр библиотеки ИФ СО РАН (2)

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>K=silicides<.>)

Общее количество найденных документов : 37
Показаны документы с 1 по 10

1-10 11-20 21-30 31-37

A way for targeted synthesis of higher manganese silicides: a new Mn17Si30 phase and its distinctive features / I. A. Tarasov [et al.] // Nanostructures: physics and technology : proc. 26th Int. symp. - 2018. - P. 209-210. - Cited References: 3 . - ISBN 978-985-7202-35-5

Материалы конференции

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин, Максим Александрович; Solovyov, L. A.; Соловьев, Леонид Александрович; Fedorov, A. S.; Федоров, Александр Семенович; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Nanostructures: Physics and Technology, International Symposium(26 ; 2018 ; June ; 18-22 ; Minsk, Belarus); Институт физики им. Б. И. Степанова НАН Беларуси; Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук; Физико-технический институт им. А.Ф. Иоффе РАН; Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук
}
Найти похожие

A way for targeted synthesis of higher manganese silicides: a new Mn17Si3O phase and its distinctive features / I. A. Tarasov [et al.] // International school/workshop on actual problems of condensed matter physics : Program. Book of abstracts / ed. S. G. Ovchinnikov. - Norilsk, 2018. - P. 14-15 . - ISBN 978-5-904603-08-3

Читать в сети ИФ

Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин, Максим Александрович; Kuznetsova, T. V.; Solovyov, L. A.; Соловьев, Леонид Александрович; Fedorov, A. S.; Федоров, Александр Семенович; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Research Institute of Agriculture and Ecology of the Arctic; Siberian Federal Univercity
}
Найти похожие

Draganyuk, O. N.
Effect of the Local Environment on the Magnetic Properties of Mn3Si: Hybrid Ab Initio and Model Study / O. N. Draganyuk, V. S. Zhandun, N. G. Zamkova // Phys. Status Solidi B. - 2019. - Vol. 256, Is. 12. - Ст. 1900228, DOI 10.1002/pssb.201900228. - Cited References: 34. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research Project No. 18‐42‐243019: “First‐principles studies of the polarization, magnetic, electronic, and magnetoelectric properties of functional compounds with a spinel structure containing 3d and 4f ions.” . - ISSN 0370-1972
Кл.слова (ненормированные):
ab initio calculations -- magnetic properties -- magnetic-instability boundaries -- manganese silicides -- mapping -- multiorbital model
Аннотация: The effect of the local environment on the formation of magnetic moments on Mn atoms in manganese silicide Mn3Si is studied by the combination of ab initio calculations and the model analysis. The suggested approach is related to the self-consistent mapping of the results of ab initio calculations to a multiorbital model. The model analysis allows to reveal the role played by the local environment of the transition metal atoms on the magnetic moments formation. It is found that the formation of the magnetic moment is controlled rather by hopping parameters between Mn atoms, not by the number of Mn–Si nearest neighbors. Particularly, the formation of magnetic moment on MnI atom is mainly controlled by the hopping parameter between nearest Mn atoms, while the magnetic moment on MnII atom is primarily determined by the hoppings between next-nearest Mn atoms. The obtained phase diagrams of the magnetic state show the presence of a sharp boundary with respect to the hopping between Mn atoms. This opens the opportunity to turn on or turn off the magnetic state by the external impacts. The ab initio calculations of Mn3Si well agree with the results of model consideration and confirm the model conclusions.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Kirensky Institute of Physics, Federal Research Center Krasnoyarsk Science Centre, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation

Доп.точки доступа:
Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Драганюк, Оксана Николаевна
}
Найти похожие

    Эллипсометрический контроль параметров многослойных наноструктур Fe/Si в процессе роста / И. А. Тарасов [и др.] // Космич. аппараты и технол. - 2018. - Т. 2, № 4. - С. 220-224, DOI 10.26732/2618-7957-2018-4-220-224. - Библиогр.: 10. - Работа выполнена при финансовой поддержке программ Президиума РАН № 32, проект 0356-2018-0061, Министерства образования и науки Российской Федерации и Сибирского отделения Российской академии наук, проект II.8.70. . - ISSN 2618-7957
   Перевод заглавия: Ellipsometric control of parameters of multilayer Fe/Si nanostructures during growth
Кл.слова (ненормированные):
эллипсометрия -- силициды железа -- многослойные Fe/Si наноструктуры -- ellipsometry -- iron silicides -- multilayer Fe/Si nanostructures
Аннотация: С использованием метода одноволновой лазерной эллипсометрии in situ проведено исследование процесса формирования многослойной структуры [Si/Fe57/Fe56]3/SiO2/Si(100). Были получены сведения об оптических и структурных свойствах данной структуры. Изменение морфологии поверхности растущих слоев и их оптических характеристик оказываются неидентичными для случаев осаждения железа на поверхность слоя кремния и осаждения кремния на поверхность слоя железа. Полученные профили оптических постоянных свидетельствуют об увеличении толщины переходных слоев, содержащих твердые растворы «железо-кремний» и силициды. Характер изменения оптических постоянных усложняется с каждым последующим слоем железа, осаждаемым на поверхность кремния. Поведение профилей n и k, соответствующих формированию кремниевых слоев, имеет более простой характер по сравнению с поведением подобных профилей железа. Эти профили имеют лишь некоторые особенности на начальных этапах роста и соответствуют формированию аморфных слоев кремния. Полученные данные согласуются с данными просвечивающей электронной микроскопии.
Using in situ single-wave laser ellipsometry method, the formation of the [Si/Fe57/Fe56]3/SiO2/Si(100) multilayer structure was studied. Information about the optical and structural properties of this structure was obtained. The change in the morphology of the surface of the growing layers and their optical characteristics are not identical for the cases of iron deposition on the surface of the silicon layer and deposition of silicon on the surface of the iron layer. The refractive index and coefficient of absorption indicate an increase of the thickness of transition layers containing iron-silicon solid solutions and silicides. The nature of the change in the optical constants become more complicated with each subsequent iron layer deposited on the silicon surface. The behavior of n and k profiles corresponding to the formation of silicon layers is simpler than the behavior of similar iron profiles. These profiles have only some features at the initial stages of growth and correspond to the formation of amorphous silicon layers. The obtained data are consistent with the data of transmission electron microscopy.

Смотреть статью,
РИНЦ,
Читать в сети ИФ
Держатели документа:
Институт физики им. Л. В. Киренского СО РАН, ФИЦ КНЦ СО РАН
Сибирский федеральный университет

Доп.точки доступа:
Тарасов, Иван Анатольевич; Tarasov, I. A.; Яковлев, Иван Александрович; Yakovlev, I. A.; Варнаков, Сергей Николаевич; Varnakov, S. N.; Жарков, Сергей Михайлович; Zharkov, S. M.; Овчинников, Сергей Геннадьевич; Ovchinnikov, S. G.
}
Найти похожие

Selective synthesis of higher manganese silicides: a new Mn17Si30 phase, its electronic, transport, and optical properties in comparison with Mn4Si7 / I. A. Tarasov [et al.] // J. Mater. Sci. - 2018. - Vol. 53, Is. 10. - P. 7571–7594, DOI 10.1007/s10853-018-2105-y. - Cited References: 62. - This work was supported by the Russian Science Foundation, Project No. 16-13-00060. Aleksandr S. Aleksandrovsky thanks RFBR Grant No. 17-52-53031 for partial work related to the NIR measurements in section “Optical Properties”. The authors are grateful to Dr. A.V. Mudriy of Minsk State University for technical assistance. The equipment of the Center for Shared Use of Federal Research Center KSC SB RAS and the Ural Center “Modern Nanotechnology” of Ural Federal University was used. . - ISSN 0022-2461
Кл.слова (ненормированные):
Semiconducting silicon compounds
Аннотация: The electronic structure, transport and optical properties of thin films of Mn4Si7 and Mn17Si30 higher manganese silicides (HMS) with the Nowotny “chimney-ladder” crystal structure are investigated using different experimental techniques and density functional theory calculations. Formation of new Mn17Si30 compound through selective solid-state reaction synthesis proposed and its crystal structure is reported for the first time, the latter belonging to I-42d. Absorption measurements show that both materials demonstrate direct interband transitions around 0.9 eV, while the lowest indirect transitions are observed close to 0.4 eV. According to ab initio calculations, ideally structured Mn17Si30 is a degenerate n-type semiconductor; however, the Hall measurements on the both investigated materials reveal their p-type conductivity and degenerate nature. Such a shift of the Fermi level is attributed to introduction of silicon vacancies in accordance with our DFT calculations and optical characteristics in low photon energy range (0.076–0.4 eV). The Hall mobility for Mn17Si30 thin film was found to be 25 cm2/V s at T = 77 K, being the highest among all HMS known before. X-ray photoelectron spectroscopy discloses a presence of plasmon satellites in the Mn4Si7 and Mn17Si30 valence band spectra. Experimental permittivity spectra for the Mn4Si7 and Mn17Si30 compounds in a wide range (0.076–6.54 eV) also indicate degenerate nature of both materials and put more emphasis upon the intrinsic relationship between lattice defects and optical properties.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
M.N. Miheev Institute of Metal Physics of the UB RAS, Yekaterinburg, Russian Federation
Institute of Physics and Technology, Ural Federal University, Yekaterinburg, Russian Federation
Siberian Federal University, Institute of Nanotechnology, Quantum Chemistry and Spectroscopy, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Natural Sciences, Ural Federal University, Yekaterinburg, Russian Federation

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин Максим Александрович; Kuznetzova, T. V.; Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Solovyov, L. A.; Kuzubov, A. A.; Nikolaeva, K. M.; Fedorov, A. S.; Федоров, Александр Семенович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Tomilin, F. N.; Томилин, Феликс Николаевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Pryahina, V. I.; Esin, A. A.; Yarmoshenko, Y. M.; Shur, V. Y.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
Найти похожие

Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111) / A. S. Tarasov [et al.] // Thin Solid Films. - 2017. - Vol. 642. - P. 20-24, DOI 10.1016/j.tsf.2017.09.025. - Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2). . - ISSN 0040-6090
Кл.слова (ненормированные):
Iron silicides -- Wet etching -- Planar structures -- MOKE microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
M.V.Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russian Federation

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Kosyrev, N. N.; Косырев, Николай Николаевич; Komarov, V. A.; Комаров, Василий Андреевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Solovyov, L. A.; Соловьев, Леонид Александрович; Shemukhin, A. A.; Чемухин, А. А.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Volkov, N. V.; Волков, Никита Валентинович
}
Найти похожие

Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties : Invited / I. A. Tarasov [et al.] // International workshop on actual problems of condensed matter physics : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P. 23

Материалы совещания

Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Solovyov, L. A.; Соловьев, Леонид Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Nemtsev, I. V.; Немцев, Иван Васильевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal Univercity; International Workshop on Actual Problems of Condensed Matter Physics(27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
Нет сведений об экземплярах (Источник в БД не найден)
}
Найти похожие

Thermoelectric properties and cost optimization of spark plasma sintered n-type Si0.9Ge0.1 - Mg2Si nanocomposites / A. Usenko [et al.] // Scripta Mater. - 2018. - Vol. 146. - P. 295-299, DOI 10.1016/j.scriptamat.2017.12.019. - Cited References: 28. - This work was supported by Russian Science Foundation (project No. 16-13-00060). Part of the work (structural characterization of the samples) was carried out with financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS”. Partial support by Act 211 Government of the Russian Federation, contract # 02.A03.21.0011, is also acknowledged. . - ISSN 1359-6462
Кл.слова (ненормированные):
Cost optimization -- Lattice thermal conductivity -- Magnesium silicides -- Spark plasma -- Thermo-Electric materials -- Thermoelectric figure of merit -- Thermoelectric performance -- Thermoelectric properties
Аннотация: We report on thermoelectric properties of low Ge content n-type Si0.9Ge0.1–Mg2Si nanocomposite. Introduction of the Mg2Si phase into a SiGe matrix resulted in a dramatic drop of the lattice thermal conductivity beyond the previously reported lowest limit for SiGe alloys due to intensification of phonon scattering on SiGe–Mg2Si grain boundaries. For a sample doped with 1 at.% of Mg2Si, the peak value of thermoelectric figure of merit ZT reached ~ 0.8 at 800 °C. Sintered nanocomposites still exhibit high thermoelectric performance while being almost two times cheaper than Si0.8Ge0.2.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
National University of Science and Technology “MISiS”, Moscow, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
National Research South Ural State University, Chelyabinsk, Russian Federation

Доп.точки доступа:
Usenko, A.; Moskovskikh, D.; Korotitskiy, A.; Gorshenkov, M.; Zakharova, E.; Fedorov, A. S.; Федоров, Александр Семенович; Parkhomenko, Y.; Khovaylo, V.
}
Найти похожие

Reflection electron energy loss spectroscopy of structures based on silicon and transition metals / A. S. Parshin [et al.] // IOP Conf. Ser.: Mater. Sci. Eng. - 2017. - Vol. 255, Is. 1. - Ст. 012019, DOI 10.1088/1757-899X/255/1/012019. - Cited References: 24
Кл.слова (ненормированные):
Dissociation -- Electron emission -- Electron energy levels -- Electron scattering -- Electrons -- Energy dissipation -- Iron -- Iron compounds -- Silicides -- Silicon compounds -- Transition metals
Аннотация: The investigation of iron silicides FeSi2, FeSi and Fe5Si3 with the methods of reflection electron energy loss spectroscopy and inelastic electron scattering cross-section spectroscopy was carried out. It is shown that the shape and peak energy position of electron energy loss spectra are almost identical to silicides with different composition, while the amplitude of inelastic electron scattering cross-section spectra decreases with increasing of iron content. The decomposition of inelastic electron scattering cross-section spectra of FeSi2, FeSi and Fe5Si3 to Tougaard peaks is used for unresolved energy loss peaks analysis, determination its energies and identification bulk and surface peaks. The amplitude of fitting peak describing bulk plasmon excitation can be used for identification of the iron silicides with different composition.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Доп.точки доступа:
Parshin, A. S.; Паршин, Анатолий Сергеевич; Igumenov, A. Y.; Mikhlin, Y. L.; Михлин, Юрий Леонидович; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович; International Scientific Conference Reshetnev Readings(20 ; 2016 ; Nov. 9-12 ; Krasnoyarsk)
}
Найти похожие

10.

Current channel switching in the manganite-based multilayer structure / N. V. Volkov [et al.] // J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5, DOI 10.1088/1742-6596/200/5/052031 . - ISSN 1742-6588
Кл.слова (ненормированные):
Channel switching -- Current in planes -- Magnetic tunnel junction -- Magnetoresistive -- Manganese silicide -- Multilayer structures -- Optical radiations -- Potential barriers -- Lanthanum -- Magnetic fields -- Manganese -- Silicides -- Transport properties -- Tunnel junctions -- Manganese oxide
Аннотация: The transport properties of the structure La0.7Sr 0.3MnO3/depleted manganite layer/MnSi have been studied. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3 and MnSi layers by forming a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealed the effect of current channel switching between the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current, magnetic field, and optical radiation. Such switching is responsible for the features of the transport properties and the magnetoresistive and photovoltaic effects in the structure. © 2010 IOP Publishing Ltd.

Scopus,
eLibrary,
WOS
Держатели документа:
Kirensky Institute of Physics SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, 660041, Russian Federation
Chungbuk National University, Department of Physics, Cheongju, 361-763, South Korea

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. -H.; Chau, N.
}
Найти похожие