Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Yakovlev I. A., Tarasov I. A., Bondarev I. A., Sukhachev A. L., Shanidze L. V., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Ferromagnetic silicides and germanides epitaxial films and multilayered hybrid structures: Synthesis, magnetic and transport properties
Колич.характеристики :14 с
Место публикации : Bull. Russ. Acad. Sci.: Phys. - 2023. - Vol. 87, Suppl. 1. - P.S133-S146. - ISSN 10628738 (ISSN), DOI 10.1134/S1062873823704518. - ISSN 19349432 (eISSN)
Примечания : Cited References: 54. - The authors thank the laboratory of Magnetic MAX Materials created under Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Branch, Russian Academy of Sciences) for assistance. The authors also thank Professor B.A. Belyaev for FMR calculationsSupported by the Russian Science Foundation, grant no. 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science
Аннотация: Planar and vertical hybrid structures, which combine ferromagnetic and semiconductor layers are essential for implementation and study of spin transport phenomena in semiconductors, which is crucial for the advancement and development of spintronics. We have developed approaches for the synthesis of Fe3 + xSi1 – x epitaxial thin films and demonstrated the spin accumulation effect in multiterminal devices based on Fe3 + xSi1 – x/Si. Fe3 + xSi1 – x/Ge/Fe3Si and Fe3 + xSi1 – x/Ge/Mn5Ge3 multilayer hybrid structures were synthesized on a Si(111) substrate, study of their structural, magnetic and transport properties were performed. The effect of synthesis conditions on the growth of epitaxial structures and on their magnetic and transport properties was discussed. The results obtained may prove valuable in the development and fabrication of spintronic devices.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Sukhachev A. L., Varnakov S. N., Ovchinnikov S. G., Volkov N. V., Tarasov A. S.
Заглавие : Ferromagnetic silicides and germanides epitaxial films and multilayered hybryd structures: synthesys, magnetic and transport properties
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect.: Spintronics and magnetic nanostructures. - Ст.A.O2. - P.31-32. - ISBN 978-5-94469-051-7
Примечания : Cited References: 10. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Smolyarova T. E., Nemtsev I. V., Yakovlev I. A., Volochaev M. N., Solovyov L. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Tailoring the preferable orientation relationship and shape of α-FeSi2nanocrystals on Si(001): The impact of gold and the Si/Fe flux ratio, and the origin of α/Si boundaries
Место публикации : CrystEngComm. - 2020. - Vol. 22, Is. 23. - P.3943-3955. - ISSN 14668033 (ISSN), DOI 10.1039/d0ce00399a
Примечания : Cited References: 52. - The experimental part of the reported study was funded by the Russian Science Foundation, project no. 16-13-00060-Π. Theoretical analysis of the ORs of the α-FeSi2 nanocrystals grown was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science via research project No. 18-42-243013. We also acknowledge the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center “Krasnoyarsk Science Center SB RAS” for support with carrying out the microscopic investigations. I. A. Tarasov personally thanks M. A. Visotin for continuous fruitful discussion about the energetics of the formation of the α-FeSi2 nanocrystals
Аннотация: The growth of α-FeSi2 nanocrystal ensembles on gold-activated and gold-free Si(001) surfaces at different Si/Fe flux ratios via molecular beam epitaxy is reported. The study reveals that the utilisation of gold as a catalyst regulates the preferable orientation relationship (OR) of the nanocrystals to silicon and their morphology at a given Si/Fe flux ratio. α-FeSi2 free-standing crystals with continuously tuned sizes from 30 nm up to several micrometres can be grown with an α(001)//Si(001) basic OR under gold-assisted conditions and an α(111)//Si(001) OR under gold-free growth conditions on a Si(001) surface. The preferred morphology of nanocrystals with a particular OR can be altered through changes to the Si/Fe flux ratio. Herein, the microstructure and basic OR between the silicide nanocrystals and the silicon substrate, and the formation of nanocrystal facets were analysed in detail with the help of microscopic techniques and simulation methods based on the analysis of near coincidence site (NCS) distributions at silicide/silicon interfaces. On the basis of the simulations used, we managed to reveal the nature of the interfaces observed for the main types of α-FeSi2 nanocrystals grown. Three types of interfaces typical for nanoplates with an α(001)//Si(001) basic OR, which are (i) stepped, (ii) stressed, and (iii) flat, are explained based on the tendency for the NCS density to increase at the interface. The results presented reveal the potential for the bottom-up fabrication of α-FeSi2 nanocrystals with tuned physical properties as potentially important contact materials and as building blocks for future nanoelectronic devices.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chepkasov I. V., Baidyshev V. S., Sukhanova E. V., Visotin M. A., Sule P., Popov Z. I.
Заглавие : Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing
Место публикации : Appl. Surf. Sci. - 2020. - Vol. 527. - Ст.146736. - ISSN 01694332 (ISSN), DOI 10.1016/j.apsusc.2020.146736
Примечания : Cited References: 67. - We thank Dr. Ivan Tarasov for fruitful discussions. The research is carried out using the equipment of the shared research facilities of HPC computing resources at Lomonosov Moscow State University and resources of the Center for the Information and Computing of Novosibirsk State University. The molecular dynamics study of sputtering and annealing iron silicides was supported by the Russian Science Foundation, project no. 16-13-00060-П. All quantum-chemical calculations were supported by Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (No. K2-2020-009)
Аннотация: The iron silicides formation during epitaxial film grown process on the (100) and (111) silicon surfaces were investigated using molecular dynamics (MD). The iron and silicon atom deposition rate and silicon substrate temperature influence on the formed iron silicide structure and stoichiometric composition were studied in detail. During the growth of iron silicide crystal structure significant diffusion of the substrate atoms into the forming BCC core occurs, this intensifies with the substrate temperature increase, and the ratio of substrate atoms inside the Fe3Si phase reaches nearly 12%. The BCC structure formation is less active on the (100) surface, and at the temperatures as low as 26 °C and 300 °C the iron silicide crystal phase does not form at all. However, with the temperature increase or the deposition rate decrease, the crystal structure formation processes occur more actively in both cases of (100) and (111) surfaces. Thus, the effect of the deposition rate decrease is identical to the temperature growth. It was shown that the formation of the structured B2 phase of iron silicide in buffer layer between the film and the substrate leads to the inhibition of the mutual diffusion of iron and silicon atoms.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Yakovlev I. A., Volochaev M. N., Nazarova Z.I., Nazarov A., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Growth and thermoelectric properties of composite thin films based on higher iron and manganese silicides
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials: Proceedings. - VLadivostok: Dalnauka Publishing, 2020. - Ст.III.30.04p. - P.90. - ISBN 978-5-8044-1698-1
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Ovchinnikov S. G., Zhandun V. S., Zamkova N. G., Maximova O. A., Lyashchenko S. A., Vysotin M. A., Sandalov I. S.
Заглавие : Electronic structure and magnetic properties of iron silicides
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials: Proceedings. - VLadivostok: Dalnauka Publishing, 2020. - Ст.PS.03.04i. - P.26. - ISBN 978-5-8044-1698-1
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Draganyuk O. N., Zhandun V. S., Zamkova N. G.
Заглавие : Effect of the Local Environment on the Magnetic Properties of Mn3Si: Hybrid Ab Initio and Model Study
Место публикации : Phys. Status Solidi B. - 2019. - Vol. 256, Is. 12. - Ст.1900228. - ISSN 03701972 (ISSN), DOI 10.1002/pssb.201900228
Примечания : Cited References: 34. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research Project No. 18‐42‐243019: “First‐principles studies of the polarization, magnetic, electronic, and magnetoelectric properties of functional compounds with a spinel structure containing 3d and 4f ions.”
Аннотация: The effect of the local environment on the formation of magnetic moments on Mn atoms in manganese silicide Mn3Si is studied by the combination of ab initio calculations and the model analysis. The suggested approach is related to the self-consistent mapping of the results of ab initio calculations to a multiorbital model. The model analysis allows to reveal the role played by the local environment of the transition metal atoms on the magnetic moments formation. It is found that the formation of the magnetic moment is controlled rather by hopping parameters between Mn atoms, not by the number of Mn–Si nearest neighbors. Particularly, the formation of magnetic moment on MnI atom is mainly controlled by the hopping parameter between nearest Mn atoms, while the magnetic moment on MnII atom is primarily determined by the hoppings between next-nearest Mn atoms. The obtained phase diagrams of the magnetic state show the presence of a sharp boundary with respect to the hopping between Mn atoms. This opens the opportunity to turn on or turn off the magnetic state by the external impacts. The ab initio calculations of Mn3Si well agree with the results of model consideration and confirm the model conclusions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Kuznetzova T. V., Aleksandrovsky A. S., Solovyov L. A., Kuzubov A. A., Nikolaeva K. M., Fedorov A. S., Tarasov A. S., Tomilin F. N., Volochaev M. N., Yakovlev I. A., Smolyarova T. E., Ivanenko A. A., Pryahina V. I., Esin A. A., Yarmoshenko Y. M., Shur V. Y., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Selective synthesis of higher manganese silicides: a new Mn17Si30 phase, its electronic, transport, and optical properties in comparison with Mn4Si7
Место публикации : J. Mater. Sci. - 2018. - Vol. 53, Is. 10. - P.7571–7594. - ISSN 00222461 (ISSN), DOI 10.1007/s10853-018-2105-y
Примечания : Cited References: 62. - This work was supported by the Russian Science Foundation, Project No. 16-13-00060. Aleksandr S. Aleksandrovsky thanks RFBR Grant No. 17-52-53031 for partial work related to the NIR measurements in section “Optical Properties”. The authors are grateful to Dr. A.V. Mudriy of Minsk State University for technical assistance. The equipment of the Center for Shared Use of Federal Research Center KSC SB RAS and the Ural Center “Modern Nanotechnology” of Ural Federal University was used.
Ключевые слова (''Своб.индексиров.''): semiconducting silicon compounds
Аннотация: The electronic structure, transport and optical properties of thin films of Mn4Si7 and Mn17Si30 higher manganese silicides (HMS) with the Nowotny “chimney-ladder” crystal structure are investigated using different experimental techniques and density functional theory calculations. Formation of new Mn17Si30 compound through selective solid-state reaction synthesis proposed and its crystal structure is reported for the first time, the latter belonging to I-42d. Absorption measurements show that both materials demonstrate direct interband transitions around 0.9 eV, while the lowest indirect transitions are observed close to 0.4 eV. According to ab initio calculations, ideally structured Mn17Si30 is a degenerate n-type semiconductor; however, the Hall measurements on the both investigated materials reveal their p-type conductivity and degenerate nature. Such a shift of the Fermi level is attributed to introduction of silicon vacancies in accordance with our DFT calculations and optical characteristics in low photon energy range (0.076–0.4 eV). The Hall mobility for Mn17Si30 thin film was found to be 25 cm2/V s at T = 77 K, being the highest among all HMS known before. X-ray photoelectron spectroscopy discloses a presence of plasmon satellites in the Mn4Si7 and Mn17Si30 valence band spectra. Experimental permittivity spectra for the Mn4Si7 and Mn17Si30 compounds in a wide range (0.076–6.54 eV) also indicate degenerate nature of both materials and put more emphasis upon the intrinsic relationship between lattice defects and optical properties.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Usenko A., Moskovskikh D., Korotitskiy A., Gorshenkov M., Zakharova E., Fedorov A. S., Parkhomenko Y., Khovaylo V.
Заглавие : Thermoelectric properties and cost optimization of spark plasma sintered n-type Si0.9Ge0.1 - Mg2Si nanocomposites
Место публикации : Scripta Mater. - 2018. - Vol. 146. - P.295-299. - ISSN 13596462 (ISSN), DOI 10.1016/j.scriptamat.2017.12.019
Примечания : Cited References: 28. - This work was supported by Russian Science Foundation (project No. 16-13-00060). Part of the work (structural characterization of the samples) was carried out with financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS”. Partial support by Act 211 Government of the Russian Federation, contract # 02.A03.21.0011, is also acknowledged.
Ключевые слова (''Своб.индексиров.''): cost optimization--lattice thermal conductivity--magnesium silicides--spark plasma--thermo-electric materials--thermoelectric figure of merit--thermoelectric performance--thermoelectric properties
Аннотация: We report on thermoelectric properties of low Ge content n-type Si0.9Ge0.1–Mg2Si nanocomposite. Introduction of the Mg2Si phase into a SiGe matrix resulted in a dramatic drop of the lattice thermal conductivity beyond the previously reported lowest limit for SiGe alloys due to intensification of phonon scattering on SiGe–Mg2Si grain boundaries. For a sample doped with 1 at.% of Mg2Si, the peak value of thermoelectric figure of merit ZT reached ~ 0.8 at 800 °C. Sintered nanocomposites still exhibit high thermoelectric performance while being almost two times cheaper than Si0.8Ge0.2.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Kuznetsova T. V., Solovyov L. A., Fedorov A. S., Yakovlev I. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : A way for targeted synthesis of higher manganese silicides: a new Mn17Si3O phase and its distinctive features
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Research Institute of Agriculture and Ecology of the Arctic, Siberian Federal Univercity
Место публикации : International school/workshop on actual problems of condensed matter physics: Program. Book of abstracts/ ed. S. G. Ovchinnikov. - Norilsk, 2018. - P.14-15. - ISBN 978-5-904603-08-3
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