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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tsikalov V. S., Patrin G. S., Kim P. D., Seong-Cho Y., Kim D. H., Chau N.
Заглавие : Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure
Коллективы : RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
Место публикации : J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст.65005. - ISSN 0022-3727, DOI 10.1088/0022-3727/42/6/065005
Примечания : Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS).
Ключевые слова (''Своб.индексиров.''): colossal magnetoresistance--electric resistance--electronic structure--magnetic field effects--magnetoelectronics--manganese--manganites--oxide minerals--schottky barrier diodes--semiconductor junctions--silicides--tunnel junctions--tunnels--bottom layers--channel switching--conducting channels--conducting layers--current-driven--current-in-plane geometries--depletion layers--ferromagnetic state--layered structures--low-resistance contacts--magnetic tunnel junctions--magneto-transport properties--manganese silicides--manganite films--new mechanisms--positive magnetoresistances--positive mr--potential barriers--spin-polarized--tunnel structures--voltage-current characteristics--current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Patrin G. S., Kim P. D., Seong-Cho Y., Kim D. -H., Chau N.
Заглавие : Current channel switching in the manganite-based multilayer structure
Место публикации : J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5. - ISSN 17426588 (ISSN), DOI 10.1088/1742-6596/200/5/052031
Ключевые слова (''Своб.индексиров.''): channel switching--current in planes--magnetic tunnel junction--magnetoresistive--manganese silicide--multilayer structures--optical radiations--potential barriers--lanthanum--magnetic fields--manganese--silicides--transport properties--tunnel junctions--manganese oxide
Аннотация: The transport properties of the structure La0.7Sr 0.3MnO3/depleted manganite layer/MnSi have been studied. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3 and MnSi layers by forming a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealed the effect of current channel switching between the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current, magnetic field, and optical radiation. Such switching is responsible for the features of the transport properties and the magnetoresistive and photovoltaic effects in the structure. © 2010 IOP Publishing Ltd.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Ovchinnikov S.G., Varnakov S.N., Fedorov A.S., Lyaschenko S.A., Yakovlev I.A.
Заглавие : Characterization and magnetic properties of the iron silicides
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Proceedings Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2011)/ Asian School-Conference on Physics and Technology of Nanostructured Materials (2011 ; Aug. ; 22-29 ; Vladivostok, Russia), Азиатская школа-конференция по физике и технологии наноструктурированных материалов (1 ; 2011 ; авг. ; 21-28 ; Владивосток). - 2011
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Ovchinnikov S. G., Bartolomé J., Rubin J., Badia L., Bondarenko G. V.
Заглавие : CEMS analysis of phase formation in nanostructured films (Fe/Si) 3
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Solid State Phenomena. - 2011. - Vol. 168-169. - P.277-280. - ISSN 1662-9779, DOI 10.4028/www.scientific.net/SSP.168-169.277
Ключевые слова (''Своб.индексиров.''): interfaces metal/semiconductor--magnetic silicides--molecular beam epitaxy technology--semiconductor and magnetic geterostructures
Аннотация: Determination of stable phases formed at the Fe/Si interface in (Fe/Si)n structure, grown by thermal evaporation in an ultrahigh vacuum system was performed using conversion electron Mossbauer spectroscopy (CEMS).
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kosyrev N. N., Varnakov S. N., Tarasov I. A., Lyashenko S. A., Ovchinnikov S. G.
Заглавие : Characterization of manganese and iron silicides by in situ spectral generalized magneto-optical ellipsometry
Коллективы : Workshop Ellipsometry (7; 2012 ; март ; 5-7; Leipzig, Germany)
Место публикации : 7th Workshop on Ellipsometry: abstract book. - 2012. - P. - 82
Аннотация: Dilute magnetic semiconductors (DMS) combine the electronic transport properties of semiconductors and memory characteristics of magnetic materials. The complementary properties of semiconductor and ferromagnetic material can manipulate both degrees of freedoms of electrons0 spins and charges for spintronic devices. In recent years, group IV(Ge,Si)-based DMSs attract considerable experimental effort due to the compatibility with mainstream silicon technology. In ourworkwe present the investigation of structural,magnetic and optical properties ofmanganese and iron silicides thin films on Si (100) substrate by in situ spectral generalizedmagneto-optical ellipsometry. Themeasurementswere performed by spectral and laser ellipsometers (“Spectroscan“ and “LEF-71“ respectively by Institute Semiconductors Physics SB RAS), optimized tomeasure not only traditional ellipsometric parameters, but also magneto-optical response of the sample. The magnetoellipsometers were integrated into the ultrahigh vacuum chambers of molecular beam epitaxy setup, which allowed to control the optical and magnetic properties of thin films directly in the growth process. As a result of the magneto-optical response analysis, it was found that iron and manganese silicides in magnetic phase were formed on the Si surface and by analysis of the ellipsometric parameters dependence on evaporation time the silicide nanoclusters were identified and their structural properties were found. The work was supported by project 4.1 of the OFN RAS, project 27.10 of the Presidium RAS, integration project22 of SB RAS and FEB RAS, and also the FCP NK-744P/6 .
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lyashchenko S. A., Varnakov S. N., Ovchinnikov S. G., Berezitskaya E. P., Alexandrova G. A., Vaituzin O. P.
Заглавие : Determination of structural parameters of the Fe-Si-system by spectral ellipsometry method
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Asian School-Conference on Physics and Technology of Nanostructured Materials (1 ; 2011 ; Aug. ; 21-28 ; Vladivostok)Азиатская школа-конференция по физике и технологии наноструктурированных материалов (1 ; 2011 ; авг. ; 21-28 ; Владивосток). Physics Procedia. - 2012. - Vol. 23. - P.49-52. - ISSN 1875-3884, DOI 10.1016/j-phpro.2011.01.013
Ключевые слова (''Своб.индексиров.''): spectral ellipsometry--silicides--atomic force microscopic
Аннотация: Limitation of the thin homogeneous layers with sharp interfaces model for the structure Si(100)/FeSi2(grain) in solution the inverse problem of ellipsometry in the visible spectral range is shown. A new model of random distribution of thin disks for describing the real structure of the sample is designed. The results of the model optimization are confirmed by AFM.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Badía-Romano L., Rubin J., Bartolomé F., Bartolome J., Ovchinnikov S. G., Varnakov S.N., Magen C., Rubio-Zuazo J., Castro G. R.
Заглавие : Morphological and compositional study at the Si/Fe interface of (Fe/Si) multilayer
Место публикации : SPIN. - 2014. - Vol. 4, № 1. - P.1440002. - DOI 10.1142/S2010324714400025
Ключевые слова (''Своб.индексиров.''): fe-si interlayer--magnetic nanostructures--fe silicides--reflectivity--conversion electron möossbauer spectroscopy
Аннотация: Diffusion and reaction of elements at the interfaces of nanostructured systems play an important role in controlling their physical and chemical properties for subsequent applications. (Fe/Si) nanolayers were prepared by thermal evaporation under ultrahigh vacuum onto a Si(100) substrate. A morphological characterization of these films was performed by combination of scanning transmission electron microscopy (STEM) and X-ray reflectivity (XRR). The compositional depth profile of the (Fe/Si) structures was obtained by angle resolved X-ray photoelectron spectroscopy (ARXPS) and hard X-ray photoelectron spectroscopy (HAXPES). Moreover, determination of the stable phases formed at the Si on Fe interfaces was performed using conversion electron Mössbauer spectroscopy. The Si/Fe interface thickness and roughness were determined to be 1.4 nm and 0.6 nm, respectively. A large fraction of the interface is composed of c-Fe1-xSi paramagnetic phase, though a minoritary ferromagnetic Fe rich silicide phase is also present.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Gomoyunova M. V., Grebenyuk G. S., Zabluda V. N., Ovchinnikov S. G., Pronin I. I.
Заглавие : Initial growth stages of manganese films on the Si(100)2 x 1 surface
Коллективы : Russian-German Laboratory at HZB BESSY; Ministry of Education and Science of the Russian Federation [14V37.21.1276]; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 2. - P.380-384. - ISSN 1063-7834, DOI 10.1134/S1063783414020310. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Ministry of Education and Science of the Russian Federation (agreement 14V37.21.1276), and the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265).
Предметные рубрики: PHOTOELECTRON-SPECTROSCOPY
ROOM-TEMPERATURE
SILICIDES
SILICON
Аннотация: Initial growth stages of manganese films on the Si(100)2 × 1 surface at room temperature have been investigated using high-energy-resolution photoelectron spectroscopy, and the dynamics of the variation in their phase composition and electronic structure with the coverage growth has been revealed. It has been shown that the interfacial manganese silicide and the film of the solid solution of silicon in manganese are sequentially formed under these conditions on the silicon surface. The growth of the metal manganese film starts after the deposition of ~0.9 nm Mn. Segregation of silicon on the film surface is observed in the range of coverages up to 1.6 nm Mn.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Gomoyunova M. V., Grebenyuk G.S ., Zabluda V. N., Ovchinnikov S. G., Pronin I. I.
Заглавие : Solid-phase synthesis of manganese silicides on the Si(100)2 x 1 surface
Коллективы : Russian-German Laboratory at HZB BESSY; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]; Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools [NSh-1044.2012.2]; Siberian Branch of the Russian Academy of Sciences [85]; Ural Branch of the Russian Academy of Sciences [85]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 4. - P.812-815. - ISSN 1063-7834, DOI 10.1134/S1063783414040337. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265), the Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools (grant no. NSh-1044.2012.2), and the Integration Project No. 85 of the Siberian and Ural Branches of the Russian Academy of Sciences.
Предметные рубрики: PHOTOELECTRON-SPECTROSCOPY
GROWTH
FILMS
Аннотация: The solid-phase synthesis of manganese silicides on the Si(100)2 × 1 surface coated at room temperature by a 2-nm-thick manganese film has been investigated using high-energy-resolution photoelectron spectroscopy with synchrotron radiation. The dynamics of variation of the phase composition and electronic structure of the near-surface region with increasing sample annealing temperature to 600°C, has been revealed. It has been shown that, under these conditions, a solid solution of silicon in manganese, metallic manganese monosilicide MnSi, and semiconductor silicide MnSi1.7 are successively formed on the silicon surface. The films of both silicides are not continuous, with the fraction of the substrate surface occupied by them decreasing with increasing annealing temperature. The binding energies of the Si 2p and Mn 3p electrons in the compounds synthesized have been determined.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sandalov I. S., Zamkova N. G., Zhandun V. S., Ovchinnikov S. G.
Заглавие : Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides
Коллективы : European Crystallographic Meeting
Место публикации : Acta Crystallogr. A: Wiley-Blackwell, 2015. - Vol. 71, Supplement. - Ст.s362. - ISSN 0108-7673, DOI 10.1107/S2053273315094590
Ключевые слова (''Своб.индексиров.''): strongly correlated electrons--delocalization
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