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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Solovyov L. A., Fedorov A. S., Yakovlev I. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : A way for targeted synthesis of higher manganese silicides: a new Mn17Si30 phase and its distinctive features
Коллективы : Nanostructures: Physics and Technology, International Symposium, Институт физики им. Б. И. Степанова НАН Беларуси, Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук, Физико-технический институт им. А.Ф. Иоффе РАН, Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук
Место публикации : Nanostructures: physics and technology: proc. 26th Int. symp. - 2018. - P.209-210. - ISBN 978-985-7202-35-5
Примечания : Cited References: 3
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Kuznetsova T. V., Solovyov L. A., Fedorov A. S., Yakovlev I. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : A way for targeted synthesis of higher manganese silicides: a new Mn17Si3O phase and its distinctive features
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Research Institute of Agriculture and Ecology of the Arctic, Siberian Federal Univercity
Место публикации : International school/workshop on actual problems of condensed matter physics: Program. Book of abstracts/ ed. S. G. Ovchinnikov. - Norilsk, 2018. - P.14-15. - ISBN 978-5-904603-08-3
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Draganyuk O. N., Zhandun V. S., Zamkova N. G.
Заглавие : Effect of the Local Environment on the Magnetic Properties of Mn3Si: Hybrid Ab Initio and Model Study
Место публикации : Phys. Status Solidi B. - 2019. - Vol. 256, Is. 12. - Ст.1900228. - ISSN 03701972 (ISSN), DOI 10.1002/pssb.201900228
Примечания : Cited References: 34. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research Project No. 18‐42‐243019: “First‐principles studies of the polarization, magnetic, electronic, and magnetoelectric properties of functional compounds with a spinel structure containing 3d and 4f ions.”
Аннотация: The effect of the local environment on the formation of magnetic moments on Mn atoms in manganese silicide Mn3Si is studied by the combination of ab initio calculations and the model analysis. The suggested approach is related to the self-consistent mapping of the results of ab initio calculations to a multiorbital model. The model analysis allows to reveal the role played by the local environment of the transition metal atoms on the magnetic moments formation. It is found that the formation of the magnetic moment is controlled rather by hopping parameters between Mn atoms, not by the number of Mn–Si nearest neighbors. Particularly, the formation of magnetic moment on MnI atom is mainly controlled by the hopping parameter between nearest Mn atoms, while the magnetic moment on MnII atom is primarily determined by the hoppings between next-nearest Mn atoms. The obtained phase diagrams of the magnetic state show the presence of a sharp boundary with respect to the hopping between Mn atoms. This opens the opportunity to turn on or turn off the magnetic state by the external impacts. The ab initio calculations of Mn3Si well agree with the results of model consideration and confirm the model conclusions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Тарасов, Иван Анатольевич, Яковлев, Иван Александрович, Варнаков, Сергей Николаевич, Жарков, Сергей Михайлович, Овчинников, Сергей Геннадьевич
Заглавие : Эллипсометрический контроль параметров многослойных наноструктур Fe/Si в процессе роста
Место публикации : Космич. аппараты и технол. - 2018. - Т. 2, № 4. - С. 220-224. - ISSN 2618-7957, DOI 10.26732/2618-7957-2018-4-220-224
Примечания : Библиогр.: 10. - Работа выполнена при финансовой поддержке программ Президиума РАН № 32, проект 0356-2018-0061, Министерства образования и науки Российской Федерации и Сибирского отделения Российской академии наук, проект II.8.70.
Ключевые слова (''Своб.индексиров.''): эллипсометрия--силициды железа--многослойные fe/si наноструктуры--ellipsometry--iron silicides--multilayer fe/si nanostructures
Аннотация: С использованием метода одноволновой лазерной эллипсометрии in situ проведено исследование процесса формирования многослойной структуры [Si/Fe57/Fe56]3/SiO2/Si(100). Были получены сведения об оптических и структурных свойствах данной структуры. Изменение морфологии поверхности растущих слоев и их оптических характеристик оказываются неидентичными для случаев осаждения железа на поверхность слоя кремния и осаждения кремния на поверхность слоя железа. Полученные профили оптических постоянных свидетельствуют об увеличении толщины переходных слоев, содержащих твердые растворы «железо-кремний» и силициды. Характер изменения оптических постоянных усложняется с каждым последующим слоем железа, осаждаемым на поверхность кремния. Поведение профилей n и k, соответствующих формированию кремниевых слоев, имеет более простой характер по сравнению с поведением подобных профилей железа. Эти профили имеют лишь некоторые особенности на начальных этапах роста и соответствуют формированию аморфных слоев кремния. Полученные данные согласуются с данными просвечивающей электронной микроскопии.Using in situ single-wave laser ellipsometry method, the formation of the [Si/Fe57/Fe56]3/SiO2/Si(100) multilayer structure was studied. Information about the optical and structural properties of this structure was obtained. The change in the morphology of the surface of the growing layers and their optical characteristics are not identical for the cases of iron deposition on the surface of the silicon layer and deposition of silicon on the surface of the iron layer. The refractive index and coefficient of absorption indicate an increase of the thickness of transition layers containing iron-silicon solid solutions and silicides. The nature of the change in the optical constants become more complicated with each subsequent iron layer deposited on the silicon surface. The behavior of n and k profiles corresponding to the formation of silicon layers is simpler than the behavior of similar iron profiles. These profiles have only some features at the initial stages of growth and correspond to the formation of amorphous silicon layers. The obtained data are consistent with the data of transmission electron microscopy.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Kuznetzova T. V., Aleksandrovsky A. S., Solovyov L. A., Kuzubov A. A., Nikolaeva K. M., Fedorov A. S., Tarasov A. S., Tomilin F. N., Volochaev M. N., Yakovlev I. A., Smolyarova T. E., Ivanenko A. A., Pryahina V. I., Esin A. A., Yarmoshenko Y. M., Shur V. Y., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Selective synthesis of higher manganese silicides: a new Mn17Si30 phase, its electronic, transport, and optical properties in comparison with Mn4Si7
Место публикации : J. Mater. Sci. - 2018. - Vol. 53, Is. 10. - P.7571–7594. - ISSN 00222461 (ISSN), DOI 10.1007/s10853-018-2105-y
Примечания : Cited References: 62. - This work was supported by the Russian Science Foundation, Project No. 16-13-00060. Aleksandr S. Aleksandrovsky thanks RFBR Grant No. 17-52-53031 for partial work related to the NIR measurements in section “Optical Properties”. The authors are grateful to Dr. A.V. Mudriy of Minsk State University for technical assistance. The equipment of the Center for Shared Use of Federal Research Center KSC SB RAS and the Ural Center “Modern Nanotechnology” of Ural Federal University was used.
Ключевые слова (''Своб.индексиров.''): semiconducting silicon compounds
Аннотация: The electronic structure, transport and optical properties of thin films of Mn4Si7 and Mn17Si30 higher manganese silicides (HMS) with the Nowotny “chimney-ladder” crystal structure are investigated using different experimental techniques and density functional theory calculations. Formation of new Mn17Si30 compound through selective solid-state reaction synthesis proposed and its crystal structure is reported for the first time, the latter belonging to I-42d. Absorption measurements show that both materials demonstrate direct interband transitions around 0.9 eV, while the lowest indirect transitions are observed close to 0.4 eV. According to ab initio calculations, ideally structured Mn17Si30 is a degenerate n-type semiconductor; however, the Hall measurements on the both investigated materials reveal their p-type conductivity and degenerate nature. Such a shift of the Fermi level is attributed to introduction of silicon vacancies in accordance with our DFT calculations and optical characteristics in low photon energy range (0.076–0.4 eV). The Hall mobility for Mn17Si30 thin film was found to be 25 cm2/V s at T = 77 K, being the highest among all HMS known before. X-ray photoelectron spectroscopy discloses a presence of plasmon satellites in the Mn4Si7 and Mn17Si30 valence band spectra. Experimental permittivity spectra for the Mn4Si7 and Mn17Si30 compounds in a wide range (0.076–6.54 eV) also indicate degenerate nature of both materials and put more emphasis upon the intrinsic relationship between lattice defects and optical properties.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Tarasov I. A., Bondarev I. A., Smolyarova T. E., Kosyrev N. N., Komarov V. A., Yakovlev I. A., Volochaev M. N., Solovyov L. A., Shemukhin A. A., Varnakov S. N., Ovchinnikov S. G., Patrin G. S., Volkov N. V.
Заглавие : Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111)
Место публикации : Thin Solid Films: Elsevier, 2017. - Vol. 642. - P.20-24. - ISSN 00406090 (ISSN), DOI 10.1016/j.tsf.2017.09.025
Примечания : Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2).
Ключевые слова (''Своб.индексиров.''): iron silicides--wet etching--planar structures--moke microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Visotin M. A., Solovyov L. A., Rautskii M. V., Zhandun V. S., Nemtsev I. V., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties : Invited
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : International workshop on actual problems of condensed matter physics: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.23 (Шифр В37/H99-812624296)
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Usenko A., Moskovskikh D., Korotitskiy A., Gorshenkov M., Zakharova E., Fedorov A. S., Parkhomenko Y., Khovaylo V.
Заглавие : Thermoelectric properties and cost optimization of spark plasma sintered n-type Si0.9Ge0.1 - Mg2Si nanocomposites
Место публикации : Scripta Mater. - 2018. - Vol. 146. - P.295-299. - ISSN 13596462 (ISSN), DOI 10.1016/j.scriptamat.2017.12.019
Примечания : Cited References: 28. - This work was supported by Russian Science Foundation (project No. 16-13-00060). Part of the work (structural characterization of the samples) was carried out with financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS”. Partial support by Act 211 Government of the Russian Federation, contract # 02.A03.21.0011, is also acknowledged.
Ключевые слова (''Своб.индексиров.''): cost optimization--lattice thermal conductivity--magnesium silicides--spark plasma--thermo-electric materials--thermoelectric figure of merit--thermoelectric performance--thermoelectric properties
Аннотация: We report on thermoelectric properties of low Ge content n-type Si0.9Ge0.1–Mg2Si nanocomposite. Introduction of the Mg2Si phase into a SiGe matrix resulted in a dramatic drop of the lattice thermal conductivity beyond the previously reported lowest limit for SiGe alloys due to intensification of phonon scattering on SiGe–Mg2Si grain boundaries. For a sample doped with 1 at.% of Mg2Si, the peak value of thermoelectric figure of merit ZT reached ~ 0.8 at 800 °C. Sintered nanocomposites still exhibit high thermoelectric performance while being almost two times cheaper than Si0.8Ge0.2.
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Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Parshin A. S., Igumenov A. Y., Mikhlin Y. L., Pchelyakov O. P., Zhigalov V. S.
Заглавие : Reflection electron energy loss spectroscopy of structures based on silicon and transition metals
Коллективы : International Scientific Conference Reshetnev Readings
Место публикации : IOP Conf. Ser.: Mater. Sci. Eng. - 2017. - Vol. 255, Is. 1. - Ст.012019. - , DOI 10.1088/1757-899X/255/1/012019
Примечания : Cited References: 24
Ключевые слова (''Своб.индексиров.''): dissociation--electron emission--electron energy levels--electron scattering--electrons--energy dissipation--iron--iron compounds--silicides--silicon compounds--transition metals
Аннотация: The investigation of iron silicides FeSi2, FeSi and Fe5Si3 with the methods of reflection electron energy loss spectroscopy and inelastic electron scattering cross-section spectroscopy was carried out. It is shown that the shape and peak energy position of electron energy loss spectra are almost identical to silicides with different composition, while the amplitude of inelastic electron scattering cross-section spectra decreases with increasing of iron content. The decomposition of inelastic electron scattering cross-section spectra of FeSi2, FeSi and Fe5Si3 to Tougaard peaks is used for unresolved energy loss peaks analysis, determination its energies and identification bulk and surface peaks. The amplitude of fitting peak describing bulk plasmon excitation can be used for identification of the iron silicides with different composition.
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10.

Вид документа : Статья из журнала
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Автор(ы) : Volkov N. V., Eremin E. V., Patrin G. S., Kim P. D., Seong-Cho Y., Kim D. -H., Chau N.
Заглавие : Current channel switching in the manganite-based multilayer structure
Место публикации : J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5. - ISSN 17426588 (ISSN), DOI 10.1088/1742-6596/200/5/052031
Ключевые слова (''Своб.индексиров.''): channel switching--current in planes--magnetic tunnel junction--magnetoresistive--manganese silicide--multilayer structures--optical radiations--potential barriers--lanthanum--magnetic fields--manganese--silicides--transport properties--tunnel junctions--manganese oxide
Аннотация: The transport properties of the structure La0.7Sr 0.3MnO3/depleted manganite layer/MnSi have been studied. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3 and MnSi layers by forming a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealed the effect of current channel switching between the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current, magnetic field, and optical radiation. Such switching is responsible for the features of the transport properties and the magnetoresistive and photovoltaic effects in the structure. © 2010 IOP Publishing Ltd.
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