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Tarasov, I. A.
α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces / I. A. Tarasov, I. A. Bondarev, A. I. Romanenko // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P. 851-861, DOI 10.1134/S1027451020040357. - Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Кл.слова (ненормированные):
iron silicide -- interface structure -- orientation relationship -- near coincidence site lattice -- edge-to-edge matching -- plane-to-plane matching
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.

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Держатели документа:
RAS, Kirensky Inst Phys, Fed Res Ctr, KSC,SB, Krasnoyarsk 660036, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Novosibirsk 630090, Russia.

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Romanenko, A. I.; Тарасов, Иван Анатольевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
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Microstructure and magnetic properties of Co58Ni10Fe5B16Si11 and Co58Ni10Fe5B16Si11-Al2O3 bulk amorphous coatings prepared by plasma spraying / E. A. Denisova, I. V. Nemtsev, S. V. Telegin [et al.] // J. Phys.: Conf. Ser. - 2020. - Vol. 1582, Is. 1. - Ст. 012078DOI 10.1088/1742-6596/1582/1/012078. - Cited References: 18. - This work was funded by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund for the Support of Scientific and Technical Activities (project no. 18-42-240006 Nanomaterials with magnetic properties determined by the topological features of the nanostructure). The authors thank the Krasnoyarsk Regional Center of Research Equipment of Federal Research Center “Krasnoyarsk Science Center SB RAS” for the provided equipment
Кл.слова (ненормированные):
Alumina -- Aluminum oxide -- Cobalt alloys -- Composite coatings -- Deposits -- Glass -- Heat treatment -- Industrial research -- Iron alloys -- Magnetic properties -- Magnetism -- Microstructure -- Nanocrystalline materials -- Nanocrystals -- Plasma jets -- Plasma spraying -- Silicon -- Silicon alloys
Аннотация: The bulk soft magnetic glassy Co58Ni10Fe5B16Si11 alloy specimens have been prepared by plasma spray deposition. In order to increase resistivity of the material, the bulk Co58Ni10Fe5B16Si11-Al2O3 composite materials were fabricated. The investigations of structure and magnetic properties of the bulk samples were carried out by X-ray diffraction, electron microscopy and magnetic measurements. The relation of the structural features and magnetic characteristics of the bulk coating to the main parameters of the deposition regimes was determined. Optimized plasma spray deposition parameters allowed obtaining bulk glassy samples with magnetic parameters that are not inferior to the characteristics of a thermally treated rapidly quenched ribbon with the same composition. It was found that the bulk amorphous coatings can be characterized as a heterophase system. The relaxation annealing of the Co58Ni10Fe5B16Si11 bulk coating leads to a phase transition in this alloy in the precrystallization temperature range. The magnetic properties of the both kinds of coatings are correlated with changes in the microstructure. The appearance of nanocrystalline phase with TC640 K during relaxation heat treatment leads to a decrease of the coercivity and to an increase of the permeability. A comparison between the magnetic properties of the CoNiFe-BSi coating and (CoNiFe-BSi)-Al2O3, composite coating is carried out.

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Держатели документа:
Kirensky Institute of Physics, Sb Russian Academy of Sciences, 50/38, Akademgorodok str., Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, 73 Svobodny ave., Krasnoyarsk, 660041, Russian Federation
Scientific Center, Federal Research Center Ksc Sb Ras, 50 Akademgorodok str., Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, 31 Krasnoyarsky Rabochy ave., Krasnoyarsk, 660037, Russian Federation
Krasnoyarsk Institute of Railways Transport, Novaja Zarja str., Krasnoyarsk, Russian Federation

Доп.точки доступа:
Denisova, E. A.; Денисова, Елена Александровна; Nemtsev, I. V.; Telegin, S. V.; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Kuzovnikova, L. A.; Shepeta, N. A.; International Conference on High-Tech and Innovations in Research and Manufacturing(2020 ; 28 Feb. ; Krasnoyarsk)
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Bulgakov, E. N.
Resonant bending of silicon nanowires by incident light / E. N. Bulgakov, A. F. Sadreev // Opt. Lett. - 2020. - Vol. 45, Is. 19. - P. 5315-5318, DOI 10.1364/OL.406109. - Cited References: 29 . - ISSN 0146-9592
Кл.слова (ненормированные):
Aspect ratio -- Elastic waves -- Silicon -- Wave propagation
Аннотация: Coupling of two dielectric wires with a rectangular cross section gives rise to bonding and anti-bonding resonances. The latter is featured by extremal narrowing of the resonant width for variation of the aspect ratio of the cross section and distance between wires. A plane wave resonant to this anti-bonding resonance gives rise to unprecedent enhancement of the optical forces up to several nano Newtons per micrometer length of the wires. The forces oscillate with the angle of incidence of the plane wave but always try to repel the wires. If the wires are fixed at the ends, the light power 1.5mW/µm2 bends wires with length 50 µm by order 100 nm.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
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Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases / M. A. Visotin, I. A. Tarasov, A. S. Fedorov [et al.] // Acta Crystallogr. B. - 2020. - Vol. 76. - P. 469-482, DOI 10.1107/S2052520620005727. - Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi). . - ISSN 2052-5206

РУБ Chemistry, Multidisciplinary + Crystallography
Рубрики:
THERMAL-EXPANSION
   BETA-FESI2 FILMS
   GROWTH
   SILICON
   DIFFRACTION
Кл.слова (ненормированные):
interface structure -- structure prediction -- orientation relationship -- near-coincidence site -- edge-to-edge matching -- iron silicide -- DFT calculations -- thermal expansion
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Visotin, M. A.; Высотин, Максим Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Fedorov, A. S.; Федоров, Александр Семенович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
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Filicheva, J. A.
The study of vibration properties of silicon nanowires / J. A. Filicheva, P. B. Sorokin // Workshop "Trends in Nanomechanics and Nanoengineering" : book of abstracts / предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P. 35

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Доп.точки доступа:
Aleksandrov, K. S. \предс. сем.\; Александров, Кирилл Сергеевич; Patrin, G. S. \зам. предс. сем.\; Патрин, Геннадий Семёнович; Ovchinnikov, S. G. \зам. предс. сем.\; Овчинников, Сергей Геннадьевич; Kosyrev, N. N. \чл. лок. ком.\; Косырев, Николай Николаевич; Fedorov, A. S. \чл. лок. ком.\; Федоров, Александр Семенович; Sorokin, P. B.; "Trends in Nanomechanics and Nanoengineering", workshop(2009 ; Aug. ; 24-28 ; Krasnoyarsk); Сибирский федеральный университет; Институт физики им. Л.В. Киренского Сибирского отделения РАН
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Atomic structure and electronic properties of beta-phase silicon nanowires / V. A. Demin [et al.] // Workshop "Trends in Nanomechanics and Nanoengineering" : book of abstracts / предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P. 36

Материалы семинара

Доп.точки доступа:
Aleksandrov, K. S. \предс. сем.\; Александров, Кирилл Сергеевич; Patrin, G. S. \зам. предс. сем.\; Патрин, Геннадий Семёнович; Ovchinnikov, S. G. \зам. предс. сем.\; Овчинников, Сергей Геннадьевич; Kosyrev, N. N. \чл. лок. ком.\; Косырев, Николай Николаевич; Fedorov, A. S. \чл. лок. ком.\; Федоров, Александр Семенович; Demin, V. A.; Sorokin, P. B.; Avramov, P. V.; Аврамов, Павел Вениаминович; Chernozatonskii, L. A.; "Trends in Nanomechanics and Nanoengineering", workshop(2009 ; Aug. ; 24-28 ; Krasnoyarsk); Сибирский федеральный университет; Институт физики им. Л.В. Киренского Сибирского отделения РАН
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Transport properties of spintronic devices fabricated from ferromagnet/silicon hybrid structures / A. V. Lukyanenko [et al.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст. A.O8. - P. 66-67. - Cited References: 2. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project No. 18-42-243022 . - ISBN 978-5-9500855-7-4

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Shanidze, L. V.; Шанидзе, Лев Викторович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zelenov, F. V.; Baron, F. A.; Барон, Филипп Алексеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Volkov, N. V.; Tarasov, A. S.; Тарасов, Антон Сергеевич; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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Effect of Heat Treatment on the Stability of Nanosized (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 Multilayers / I. V. Babkina, M. N. Volochaev, O. V. Zhilova [et al.] // Bull. Russ. Acad. Sci. Phys. - 2020. - Vol. 84, Is. 9. - P. 1100-1103, DOI 10.3103/S1062873820090051. - Cited References: 11. - This work was supported by the RF Ministry of Science and Higher Education as part of State Task no. FZGM-2020-0007 . - ISSN 1062-8738
Кл.слова (ненормированные):
After-heat treatment -- Binary alloys -- Film preparation -- II-VI semiconductors -- Ion beams -- Magnetic semiconductors -- Multilayers -- Oxide minerals -- Semiconducting indium compounds -- Semiconducting silicon compounds -- Semiconducting zinc compounds -- Silica -- Silicon -- Sputtering -- Wide band gap semiconductors -- Zinc oxide
Аннотация: An investigation is performed of the thermal stability and phase transformations of thin-film heterogeneous [(Co40Fe40B20)34(SiO2)66/ZnO/In2O3]85 multilayers obtained via ion beam sputtering. The system contains 85 layers, each consisting of a (Co40Fe40B20)34(SiO2)66 composite layer and ZnO and In2O3 semiconductor spacers. The sample structure in the initial state and after heat treatment is studied by means of X-ray diffraction. It is shown that the samples are stable at temperatures of up to 500°С. Zn2SiO4, InBO3, CoFe, and In2O3 phases form during annealing.

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Публикация на русском языке Влияние термообработки на стабильность наноразмерных многослойных структур (Co40Fe40B20)34(SiO2)66/ZnO/In2O3 [Текст] / И. В. Бабкина, М. Н. Волочаев, О. В. Жилова [и др.] // Изв. РАН. Сер. физич. - 2020. - Т. 84 № 9. - С. 1293-1296

Держатели документа:
Voronezh State Technical University, Voronezh, 394026, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Babkina, I. V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zhilova, O. V.; Kalinin, Y. E.; Kashirin, M. A.; Sitnikov, A. V.; Chehonadskih, M. V.; Yanchenko, L. I.
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Growth of α-FeSi2 nanocrystals on silicon surface: the impact of gold and the Si/Fe flux ratio, the origin and the prediction of α/Si orientation relationships and interface structures / I. A. Tarasov, M. A. Visotin, S. N. Varnakov [et al.] ; чл. орг. ком.: M. Farle [et al.] ; секр. орг. ком. T. E. Smolyarova // International workshop on functional MAX-materials (1st FunMax). - 2020. - P. 11. - Cited references: 2. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886)

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Visotin, M. A.; Высотин, Максим Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Farle, M.; Farle, M. \чл. орг. ком.\; Tarasov, A. S. \чл. орг. ком.\; Тарасов, Антон Сергеевич; Ovchinnikov, S. G. \чл. орг. ком.\; Smolyarova, T. E. \секр. орг. ком.\; Смолярова, Татьяна Евгеньевна; International workshop on functional MAX-materials(1 ; 2020 ; Aug. 10-12 ; Krasnoyarsk (on-line)); Kirensky Institute of Physics
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10.

Modification of optical and magneto-optical response of highly textured Au3Fe1-x/Fe Janus-like nanocrystals grown on amorphous silicon dioxide surface / I. A. Tarasov, T. E. Smolyarova, I. A. Yakovlev [et al.] ; чл. орг. ком.: M. Farle [et al.] ; секр. орг. ком. T. E. Smolyarova // International workshop on functional MAX-materials (1st FunMax). - 2020. - P. 22. - The study was carried out with the financial support of the Government of the Russian Federation within the framework of a grant for the creation of world-class laboratories (Agreement No. 075-15-2019-1886)

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Nemtsev, I. V.; Немцев, Иван Васильевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Farle, M. \чл. орг. ком.\; Tarasov, A. S. \чл. орг. ком.\; Тарасов, Антон Сергеевич; Ovchinnikov, S. G. \чл. орг. ком.\; Smolyarova, T. E. \секр. орг. ком.\; International workshop on functional MAX-materials(1 ; 2020 ; Aug. 10-12 ; Krasnoyarsk (on-line)); Kirensky Institute of Physics
}
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