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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fedorova, Natalja A., Kovaleva, Alena V., Olshevskaya Ju. S., Ivanova D. A., Kozak V. V., Shubin A. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G., Moshkina E. M., Maximova O. A., Avramov P. V., Tomilin F. N.
Заглавие : Substitution effects in spin-polarized (Cr4-xFex)0.5AC (A = Ge, Si, Al) MAX phases
Место публикации : Magnetochemistry. - 2023. - Vol. 9, Is. 6. - Ст.147. - ISSN 23127481 (eISSN), DOI 10.3390/magnetochemistry9060147
Примечания : Cited References: 59. - This study was supported by the Russian Science Foundation, project no. 21-12-00226. P.V.A. acknowledges the support of the National Research Foundation of the Republic of Korea, grant no. NRF 2021R1A2C1010455
Аннотация: The use of spintronic devices with a tunable magnetic order on small scales is highly important for novel applications. The MAX phases containing transition metals and/or magnetic ion-substituted lattices attract a lot of attention. In this study, the magnetic and electronic properties of (Cr4-xFex)0.5AC (A = Ge, Si, Al) compounds were predicted and investigated within the density functional theory. It was established that single-substituted (Cr3Fe1)0.5AC (A = Ge, Si, Al) lattices are favorable in terms of energy. An analysis of the magnetic states of the MAX phases demonstrated that their spin order changes upon substitution of iron atoms for chromium ones. It was found that mostly the (Cr4-xFex)0.5GeC and (Cr4-xFex)0.5AlC lattices acquire a ferrimagnetic state in contrast to (Cr4-xFex)0.5SiC for which the ferromagnetic spin order dominates. It was pointed out that the atomic substitution could be an efficient way to tune the magnetic properties of proposed (Cr4-xFex)0.5AC (A = Ge, Si, Al) MAX phases.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Yakovlev I. A., Tarasov I. A., Bondarev I. A., Sukhachev A. L., Shanidze L. V., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Ferromagnetic silicides and germanides epitaxial films and multilayered hybrid structures: Synthesis, magnetic and transport properties
Колич.характеристики :14 с
Место публикации : Bull. Russ. Acad. Sci.: Phys. - 2023. - Vol. 87, Suppl. 1. - P.S133-S146. - ISSN 10628738 (ISSN), DOI 10.1134/S1062873823704518. - ISSN 19349432 (eISSN)
Примечания : Cited References: 54. - The authors thank the laboratory of Magnetic MAX Materials created under Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Branch, Russian Academy of Sciences) for assistance. The authors also thank Professor B.A. Belyaev for FMR calculationsSupported by the Russian Science Foundation, grant no. 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science
Аннотация: Planar and vertical hybrid structures, which combine ferromagnetic and semiconductor layers are essential for implementation and study of spin transport phenomena in semiconductors, which is crucial for the advancement and development of spintronics. We have developed approaches for the synthesis of Fe3 + xSi1 – x epitaxial thin films and demonstrated the spin accumulation effect in multiterminal devices based on Fe3 + xSi1 – x/Si. Fe3 + xSi1 – x/Ge/Fe3Si and Fe3 + xSi1 – x/Ge/Mn5Ge3 multilayer hybrid structures were synthesized on a Si(111) substrate, study of their structural, magnetic and transport properties were performed. The effect of synthesis conditions on the growth of epitaxial structures and on their magnetic and transport properties was discussed. The results obtained may prove valuable in the development and fabrication of spintronic devices.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kozak V. V., Fedorova N. A., Olshevskaya Ju. S., Kovaleva A. V., Shubin A. A., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G., Tomilin F. N., Avramov P. V.
Заглавие : Nearly flat bands and ferromagnetism in the terminated Mn2C MXene
Место публикации : Comput. Condens. Matter. - 2023. - Vol. 35. - Ст.e00806. - ISSN 23522143 (eISSN), DOI 10.1016/j.cocom.2023.e00806
Примечания : Cited References: 76. - This study was supported by the Russian Science Foundation, project no. 21-12-00226 and the JCSS Joint Super Computer Center of the Russian Academy of Sciences. P.V.A. acknowledges the National Research Foundation of the Republic of Korea grant NRF 2021R1A2C1010455
Аннотация: Using Density Functional Theory and Periodic Boundary Conditions it is shown that the hydroxylated/oxygenated/halogenated Mn2C monolayer is a 2D ferromagnetic material with a local Mn ions magnetic moment of 2.7μв per unit cell. Upon oxygenation the ferromagnetic coupling between Mn ions can be transformed into a superposition of magnetic states. In particular, the intrinsic magnetic moments in the hydroxylated/halogenated Mn2C monolayer can attain up to 6μB per unit cell. It is found that oxygen termination induces flat bands in the band structure, which evidence for the strong electron correlations and could lead to the implementation of exotic quantum phases in 2D crystals and high-temperature superconductivity. Along with the potential of the hydroxylated Mn2C monolayer characterized by the half-metallicity for application in spintronic devices as a perfect spin injector/detector, this material like other conventional MXenes is promising for the use in energy storage, electromagnetic interference shielding, and sensing.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Melchakova I., Kovaleva E. A., Mikhaleva, Natalia S., Tomilin F. N., Ovchinnikov S. G., Kuzubov A. A., Avramov P. V.
Заглавие : External electric field effect on electronic properties and charge transfer in CoI2/NiI2 spinterface
Коллективы : Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation [16.1455.2017/PCh]; National Research Foundation of KoreaNational Research Foundation of Korea [NRF-2017R1A2B4004440]; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-43-243011]
Место публикации : Int. J. Quantum Chem. - 2020. - Vol. 120, Is. 3. - Ст.e26092. - ISSN 0020-7608, DOI 10.1002/qua.26092. - ISSN 1097-461X(eISSN)
Примечания : Cited References: 27. - Ministry of Education and Science of the Russian Federation, Grant/Award Number: 16.1455.2017/PCh; National Research Foundation of Korea, Grant/Award Number: NRF-2017R1A2B4004440; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science, Grant/Award Number: 18-43-243011
Предметные рубрики: MAGNETIC-PROPERTIES
METAL
EDGE
Аннотация: Electronic structure and spin-related properties of CoI2/NiI2 heterostructure were studied by means of density functional theory. It was shown that the electronic structure at the Fermi level can be characterized by a band gap. The effect of the external electric field on charge transfer and electronic properties of the CoI2/NiI2 interface was investigated, and it was found that band gap width depends on the strength of the applied electric field, switching its nature from semiconducting to a half-metallic one. An easy control of the electronic properties and promising spin-polarized nature of the CoI2/NiI2 spinterface allows the heterostructure to be used in spin-related applications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Yakovlev I. A., Volochaev M. N.
Заглавие : Magnetoimpedance Effect in a SOI-Based Structure
Место публикации : Semiconductors. - 2019. - Vol. 53, Is. 14. - P.98-100. - ISSN 1063-7826 (ISSN), DOI 10.1134/S1063782619140215. - ISSN 1090-6479 (eISSN)
Примечания : Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”.
Предметные рубрики: NANOSTRUCTURE DEVICES
Аннотация: This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gritsenko, C.h., Dzhun I., Volochaev M. N., Gorshenkov M., Babaytsev G., Chechenin N., Sokolov A. Е., Tretiakov, Oleg A., Rodionova V.
Заглавие : Temperature-dependent magnetization reversal in exchange bias NiFe/IrMn/NiFe structures
Коллективы : Russian Foundation for Basic Research (RFBR) [17-32-50170]; MEXT, Japan [17 K05511, 17H05173]; Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University; JSPS; RFBR under the Japan-Russian Research Cooperative Program; Ministry of Education and Science of the Russian Federation [3.9002.2017/6.7]
Место публикации : J. Magn. Magn. Mater. - 2019. - Vol. 482. - P.370-375. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2019.03.044. - ISSN 1873-4766(eISSN)
Примечания : Cited References: 55. - Ch. G. and M. G. acknowledge financial support by the Russian Foundation for Basic Research (RFBR grant. 17-32-50170). Ch. G. acknowledges the 5 top 100 Russian Academic Excellence Project at the Immanuel Kant Baltic Federal University. O.A.T. acknowledges support by the Grants-in-Aid for Scientific Research (Grant Nos. 17 K05511 and 17H05173) from MEXT, Japan, by the grant of the Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, by JSPS and RFBR under the Japan-Russian Research Cooperative Program. V.R. acknowledges the Ministry of Education and Science of the Russian Federation in the framework of government assignment 3.9002.2017/6.7. Electron microscopy examination was carried out at the Center for Collective Use of the Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences. We also thank Montserrat Rivas for helpful discussions.
Предметные рубрики: COERCIVITY
FILM
ROUGHNESS
THICKNESS
HEADS
IRMN
Аннотация: We demonstrate magnetization reversal features in NiFe/IrMn/NiFe thin-film structures with 40% and 75% relative content of Ni in Permalloy in the temperature range from 80 K to 300 K. The magnetization reversal sequence of the two ferromagnetic layers is found to depend on the type of NiFe alloy. In the samples with 75% relative content of Ni, the bottom ferromagnetic layer reverses prior to the top one. On the contrary, in the samples with 40% of Ni, the top ferromagnetic layer reverses prior to the bottom one. These tendencies of magnetization reversal are preserved in the entire range of temperatures. These distinctions can be explained by the morphological and structural differences of interfaces in the samples based on two types of Permalloy.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Yakovlev I. A., Masyugin A. N., Volochaev M. N., Bondarev I. A., Kosyrev N. N., Volkov N. V.
Заглавие : Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states
Место публикации : Thin Solid Films. - 2019. - Vol. 671. - P.18-21. - ISSN 00406090 (ISSN) , DOI 10.1016/j.tsf.2018.12.026
Примечания : Cited References: 15. - This study was supported by the Russian Foundation for Basic Research , project no. 18-32-00035 and supported in part by the Russian Foundation for Basic Research , Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243022, and the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences , project II.8.70, and the Presidium of the Russian Academy of Sciences , Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies».
Аннотация: This article presents the results of a study of the transport properties of metal/insulator/semiconductor (MIS) hybrid structures in alternating current (ac) mode. We prepared a series of samples with different layers of metal, insulator, and semiconductor. We prepared a series of samples with different layers of metal, insulator and semiconductor. Ferromagnetic Fe and non-magnetic Cu and Mn were chosen as metals, the insulators were SiO2 and Al2O3, and n- and p-type Si substrates were used as semiconductors. Temperature dependence of the real part of the impedance showed peculiar peaks below 40К for different combinations of metals, insulators and semiconductors. For all samples the effect of the magnetic field on the transport properties was studied. At low temperatures, the magnetic field shifts peaks toward higher temperatures. Metal magnetic state does not significantly affect this phenomenon. Changing the type of the insulator and its thickness also did not cause any significant effect. However, the effect was observed for samples with different composition. Moreover, the type of conductivity of the substrate, as well as the type of metal, determines the value of magnetoimpedance. The main role in the magnetoimpedance effect is played by recharge of the energy states localized at the insulator/semiconductor interface. This mechanism allows obtaining a MI effect even in “nonmagnetic” MIS structures; magnetoimpedance can be either positive or negative, depending on temperature and frequency. We suggest that the observed ac magnetotransport phenomena could be used for creating magnetic field sensors, working on new principles.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Bondarev I. A., Rautskii M. V., Lukyanenko A. V., Tarasov I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Room temperature spin accumulation effect in boron doped Si created by epitaxial Fe3Si/p-Si Schottky contact
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243046, 16-42-242036, 16-42-243060]
Место публикации : J. Surf. Ingestig. - 2018. - Vol. 12, Is. 4. - P.633-637. - ISSN 1027-4510, DOI 10.1134/S1027451018040171. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060.
Предметные рубрики: HYBRID STRUCTURES
CURRENT-VOLTAGE
FILMS
TRANSPORT
SILICON
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--schottky diode--hanle effect--spin--accumulation
Аннотация: To study spin-dependent transport phenomena in Fe3Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. IaEuro'V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe3Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe3Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Bondarev I. A., Rautskii M. V., Baron F. A., Smolyarova T. E., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Synthesis of 3-terminal ferromagnet/silicon spintronics devices and their transport properties
Коллективы : Nanostructures: Physics and Technology, International Symposium, Институт физики им. Б. И. Степанова НАН Беларуси, Санкт-Петербургский национальный исследовательский Академический университет Российской академии наук, Физико-технический институт им. А.Ф. Иоффе РАН, Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук
Место публикации : Nanostructures: physics and technology: proc. 26th Int. symp. - 2018. - P.245-246. - ISBN 978-985-7202-35-5
Примечания : Cited References: 9
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