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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Yakovlev I. A., Tarasov I. A., Lukyanenko A. V., Rautskii M. V., Solovyov L., Sukhachev A. L., Volochaev M. N., Efimov D., Goikhman A., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V., Tarasov A. S.
Заглавие : Sublayer-enhanced growth of highly ordered Mn5Ge3 thin film on Si(111)
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 24. - Ст.4365. - ISSN 20794991 (eISSN), DOI 10.3390/nano12244365
Примечания : Cited References: 23. - The research was funded by Russian Science Foundation, project No. 21-12-00226. The RBS experiment was conducted in REC «Functional Nanomaterials», Immanuel Kant Baltic Federal University under the financial support from the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Аннотация: Mn5Ge3 epitaxial thin films previously grown mainly on Ge substrate have been synthesized on Si(111) using the co-deposition of Mn and Ge at a temperature of 390 °C. RMS roughness decreases by almost a factor of two in the transition from a completely polycrystalline to a highly ordered growth mode. This mode has been stabilized by changing the ratio of the Mn and Ge evaporation rate from the stoichiometric in the buffer layer. Highly ordered Mn5Ge3 film has two azimuthal crystallite orientations, namely Mn5Ge3 (001) [1-10] and Mn5Ge3 (001) [010] matching Si(111)[-110]. Lattice parameters derived a (7.112(1) Å) and c (5.027(1) Å) are close to the bulk values. Considering all structural data, we proposed a double buffer layer model suggesting that all layers have identical crystal structure with P6₃/mcm symmetry similar to Mn5Ge3, but orientation and level of Si concentration are different, which eliminates 8% lattice mismatch between Si and Mn5Ge3 film. Mn5Ge3 film on Si(111) demonstrates no difference in magnetic properties compared to other reported films. TC is about 300 K, which implies no significant excess of Mn or Si doping. It means that the buffer layer not only serves as a platform for the growth of the relaxed Mn5Ge3 film, but is also a good diffusion barrier.
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