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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Khodenkov S. A., Govorun I. V., Serzhantov A. M.
Заглавие : A high-selectivity wideband bandpass dual-mode microstrip filter
Место публикации : Dokl. Phys. - 2022. - Vol. 67, Is. 3. - P.89-93. - ISSN 10283358 (ISSN), DOI 10.1134/S1028335822020021. - ISSN 15626903 (eISSN)
Примечания : Cited References: 12. - This study was carried out within a State Assignment, project no. FEFE-2020-0013, of the Ministry of Science and Higher Education of the Russian Federation
Аннотация: A half-wave microstrip resonator design with an irregular strip conductor short-circuited to the screen by its ends has been investigated. Based on the resonances of the first two oscillatory modes of this resonator, a miniaturized second-order filter with a fractional bandwidth from 40% to 90% has been implemented, which has a wide high-frequency stopband. A prototype of the designed eight-order filter based on four dual-mode resonators with a passband center frequency of 2 GHz and a fractional bandwidth of 40% has been fabricated on an alumina substrate 45.0 × 10.5 × 1.0 mm3 in size with a permittivity of ε = 9.8. The filter frequency response slopes are extremely steepness due to two attenuation poles located on the left and right sides of the passband. The experimental characteristics of the prototype are in good agreement with the data of the numerical electromagnetic simulation of the 3D model of the filter.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Serzhantov A. M., Bal'va Y. F., Leksikov An. A., Grushevskii E. O.
Заглавие : A Highly Selective Bandpass Filter Based on Suspended Substrate Resonators with a Two-Sided Stripline Pattern
Коллективы : Ministry of Education and Science of the Russian Federation [14.575.21.0142, RFMEFI57517X0142]
Место публикации : Tech. Phys. Lett. - 2019. - Vol. 45, Is. 5. - P485-488. - ISSN 1063-7850, DOI 10.1134/S1063785019050225. - ISSN 1090-6533(eISSN)
Примечания : Cited References: 14. - This study was supported in part by the Ministry of Education and Science of the Russian Federation, agreement no. 14.575.21.0142, unique project identifier RFMEFI57517X0142.
Предметные рубрики: MICROSTRIP
FEATURES
Аннотация: New resonator design employing a hairpin stripline conductor with a stub situated on one side of a dielectric substrate and regular stripline conductors (connected to a screen) on the other side. Eigenfrequencies of the first three oscillation modes of this resonator can be made closer to each other, so that the resonances of two modes are involved in the formation of the passband while the third mode resonance forms a minimum of the transmission coefficient adjacent to the passband. A structure comprising four resonators of this type has the characteristic of an eighth-order bandpass filter arranged in a case with 45 × 16 × 6.25-mm internal dimensions possessing f0 = 0.52 GHz central frequency with a 14% relative bandwidth. The filter is highly selective due to the attenuation poles being close to the pass band and a wide high-frequency stopband extending above a fivefold f0 value at a level of –100 dB.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Serzhantov A. M., Leksikov An. A., Bal'va Y. F., Grushevskii E. O., Khodenkov S. A.
Заглавие : A highly selective stripline lowpass filter with more than 100-dB wide stopband attenuation
Коллективы : Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation [02G25.31.0330]
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 4. - P.364-367. - ISSN 1063-7850, DOI 10.1134/S1063785020040173. - ISSN 1090-6533(eISSN)
Примечания : Cited References: 8. - This study was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of agreement no. 02G25.31.0330.
Аннотация: A new miniature design of a highly selective lowpass filter based on a suspended substrate with a two-sided stripline pattern has been developed. The filter frequency response slope (cutoff attenuation rate) and stopband attenuation depth are determined by transmission zeros, the number of which is equal to the filter order. An experimental prototype of a fifth-order lowpass filter on 0.5-mm-thick alumina substrate with dielectric permittivity ε = 9.8 has been synthesized with the aid of numerical electrodynamic analysis of a three-dimensional model. The cutoff frequency of the filter passband at a –1-dB level is fc = 1.75 GHz. The stopband width at a –100-dB attenuation level reaches 4.4fc.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Leksikov A. A., Serzhantov A. M., Govorun I. V., Afonin A. O., Ugryumov A. V., Leksikov An. A.
Заглавие : A method of stopband widening in BPF based on two-conductor suspended-substrate resonators
Место публикации : Prog. Electromagn. Res. Lett. - 2018. - Vol. 72. - P.11-16. - ISSN 19376480 (ISSN), DOI 10.2528/PIERL17102302
Примечания : Cited References: 10
Ключевые слова (''Своб.индексиров.''): fourth order--microwave bandpass filter--stopband--stripline resonators--suspended substrates--wide upper stopband
Аннотация: A method aiming to widen the upper stopband in a microwave bandpass filter based on two-conductor suspended-substrate stripline resonators is described in this letter. Applicability of the method is illustrated by simulating and fabricating fourth-order filter that has a very wide upper stopband: Δfstop/f0 = 7.92 measured at a level -50 dB, which is achieved because the widths of the inner resonators in the structure are 1.4 times greater than that of the outer ones.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Voloshin A. S., Bulavchuk A. S., Galeev R. G.
Заглавие : A miniature filter on a suspended substrate with a two-sided pattern of strip conductors
Место публикации : Tech. Phys. Lett.: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 42, Is. 6. - P.622-625. - ISSN 10637850 (ISSN), DOI 10.1134/S1063785016060195
Примечания : Cited References: 15. - This study was supported in part by the Ministry of Education and Science of the Russian Federation, project no. 14.607.21.0039.
Предметные рубрики: HAIRPIN RESONATORS
BANDPASS FILTER
WIDE-STOPBAND
100 DB
MICROWAVE
FEATURES
DESIGN
Аннотация: A miniature bandpass filter of new design with original stripline resonators on suspended substrate has been studied. The proposed filters of third to sixth order are distinguished for their high frequency-selective properties and mush smaller size in comparison to analogs. It is shown that a broad stopband extending above three-fold central bandpass frequency is determined by weak coupling of resonators at resonances of the second and third modes. A prototype sixth-order filter with a central frequency of 1 GHz, manufactured on a ceramic substrate with dielectric permittivity ε = 80, has contour dimensions of 36.6 × 4.8 × 0.5 mm3. Parametric synthesis of the filter, based on electrodynamic 3D model simulations, showed quite good agreement with the results of measurements.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Serzhantov A. M., Leksikov An. A., Bal'va Y. F., Grushevskii E. O.
Заглавие : An ultra-wideband stripline bandpass filter with a noise suppression level of more than 100 dB
Коллективы : Ministry of Science and Higher Education of the Russian Federation [075-11-2019-078]
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 8. - P.787-791. - ISSN 1063-7850, DOI 10.1134/S1063785020080179. - ISSN 1090-6533(eISSN)
Примечания : Cited References: 9. - This work was financially supported by the Ministry of Science and Higher Education of the Russian Federation in the implementation of the integrated project "Creation of a production of earth stations of advanced satellite communications systems to ensure the coherence of hard, northern and Arctic territory of Russian Federation," implemented with the participation of the Federal Research Center "Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences|" (agreement number 075-11-2019-078 dated 13.12.2019)
Аннотация: An ultra-wideband bandpass filter formed by cascading of a novel high-pass filter (HPF) and a low-pass filter (LPF) on suspended substrates with a two-sided pattern of strip conductor has been investigated. The high selectivity of the HPF is ensured by the transmission zeros near the passband, the number of which is equal to the filter order. A second-order HPF has been designed on a 0.5-mm-thick substrate with a permittivity of ε = 9.8 using the numerical electrodynamic analysis of a 3D model of the filter. The experimental HPF prototype has a cutoff frequency of fb = 0.25 GHz at a level of –3 dB and a passband that extends to 5 GHz. The ultra-wideband bandpass filter formed by cascading of the LPF and the designed HPF has a fractional bandwidth of Δf/f0 = 150% with a central frequency of f0 = 1 GHz. It has the broad and deep high-frequency stopband, which extends to a frequency of 7.8f0 at a suppression level of –100 dB.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gokhfeld D. M., Savitskaya N. E., Popkov S. I., Kuzmichev N. D., Vasyutin M. A., Balaev D. A.
Заглавие : Anisotropic magnetization of an NbN film
Место публикации : J. Exp. Theor. Phys. - 2022. - Vol. 134, Is. 6. - P.707-712. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776122060097
Примечания : Cited References: 31. - We are grateful to I.V. Nemtsev for measurements on the scanning electron microscope, S.A. Skorobogatov for his help in magnetic measurements (scanning electron microscopy and magnetic measurements have been performed at the Krasnoyarsk Regional Collective Usage Center of the Federal Research Center “Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences”)
Аннотация: The structural and magnetic properties of a niobium nitride (NbN) film prepared by reactive sputtering onto a quartz substrate are investigated. It is shown using scanning electron microscopy that the film has a columnar structure with a diameter of crystallite columns of about 50 nm. The film magnetization loops are measured for the field orientation parallel and perpendicular to its surface. Based on the experimental data, the critical current densities of the film are estimated in both cases. For the field parallel to the film surface, the estimate is 6.5 × 104 A/cm2 at the liquid helium temperature. For the field perpendicular to the surface, the critical current density is close to the depairing current density (107 A/cm2). Analysis of the results based on different models of magnetic vortex pinning in superconductors shows that in the former case, pinning occurs at the boundaries of columns in the bulk of the sample, while in the latter case, it is determined by the influence of the surface barrier.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aver'yanov E. M.
Заглавие : Local-Field Anisotropy of a Light Wave in Quasi-Two-Dimensional Soft-Matter Objects
Коллективы :
Разночтения заглавия :авие SCOPUS: Local-field anisotropy of a light wave in quasi-two-dimensional soft-matter objects
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2010. - Vol. 110, Is. 4. - P622-636. - ISSN 1063-7761, DOI 10.1134/S1063776110040102
Примечания : Cited References: 73. - This study was supported by the Presidium of the Russian Academy of Sciences within the Program of Basic Research (project no. 27.1) and the Siberian Branch of the Russian Academy of Sciences within the Program of Interdisciplinary Basic Research (project no. 5).
Предметные рубрики: INTEGRATED OPTICAL TECHNIQUES
LANGMUIR-BLODGETT-FILMS
SMECTIC LIQUID-CRYSTALS
UNIAXIAL POLYMER-FILMS
MOLECULAR-ORIENTATION
INTERNAL FIELD
DIELECTRIC-CONSTANT
SPECTRAL FEATURES
REFRACTIVE-INDEX
THIN-FILMS
Ключевые слова (''Своб.индексиров.''): anisotropic films--bilayer lipid membrane--chemical structure--comblike polymers--conductive polymer--discotics--dispersion of refractive index--experimental data--experimental values--hexatic-b phase--isotropization--langmuir films--light wave--lorentz--macromolecular polymers--model approach--molecular polarizabilities--optical axis--order parameter--orientational order parameters--orientational orderings--orientational orders--smectic layers--smectic-a--smectics--soft matter--structural unit--sub-micron films--substrate types--tensor components--visible range--anisotropy--cell membranes--conductive plastics--conjugated polymers--electronic structure--light measurement--liquid crystal polymers--molecules--multilayer films--organic polymers--phase transitions--polarization--polymers--refractive index--substrates--tensors--two dimensional--conductive films
Аннотация: Experimental values of the Lorentz tensor components L-j for uniaxial quasi-two dimensional "soft matter" objects on substrates (bilayer lipid membranes, multilayer Langmuir films, smectics A, hexatic smectics B, submicron films of discotics Col(hd), micron anisotropic films of liquid-crystal comblike polymers and macromolecular polymers, submicron films of conjugated conductive polymers), freely suspended sub-micron films of smectics A, and uniaxially stretched micron films of conjugated conductive polymers have been determined using dispersion of refractive indices in the visible range. The dependences of the components L-j on the type of orientation (axial, planar) of uniaxial molecules (structural units of the film) with respect to the optical axis of the film, the film thickness, the substrate type, the chemical structure of molecules, and their long-range orientational order are established. It is revealed that the smectic A-hexatic B phase transition and two-dimensional crystallization of the smectic layer lead to changes in the components L-j due to the change in the orientational ordering of molecules as a result of the relation between the orientational and hexatic order parameters. All the above objects are characterized by isotropization of the Lorentz tensor L and the local-field tensor f with a simultaneous decrease in the birefringence of the sample and in the anisotropy of the molecular polarizability due to the change in the electronic structure of molecules. The correction for the anisotropy of the local-field tensor f to the orientational order parameter or the anisotropy of the molecular polarizability increases. The existing model approaches to calculating the components L-j for the objects under consideration are compared with the experimental data.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Belyaev B. A., Izotov A. V., Solovev P. N.
Заглавие : The effect of substrate artificial texture on high frequency properties of thin magnetic films
Коллективы : Magnetics and Optics Research International Symposium
Место публикации : International symposium «Magnetics and optics research» MORIS-2013: Technical digest. - 2013. - P.54-55
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.526-529. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.526. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hybrid structure--mis transition--photoelectric effect--schottky barrier--channel switching--comparative analysis--electron hole pairs--fe films--fe layer--ferromagnetic films--hybrid structure--optical effects--optical radiations--photogeneration--planar geometries--schottky barriers--semiconductor substrate--temperature variation--critical currents--interfaces (materials)--magnetic materials--photoelectricity--schottky barrier diodes--silicon--switching circuits--transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
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