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: Статья из журнала
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Автор(ы)
: Tarasov I. A., Bondarev I. A., Romanenko A. I.
Заглавие
: α-
FeSi2
as a buffer layer for β-
FeSi2
growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces
Коллективы
: Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
Место публикации
: J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P.851-861. - ISSN 1027-4510,
DOI
10.1134/S1027451020040357. - ISSN 1819-7094(eISSN)
Примечания
: Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70)
Предметные рубрики:
β-
FeSi2
thin
-
films
Thermal-expansion
Phase-transformation
Аннотация:
In this manuscript, we attempt to clarify the capability of utilisation of α-
FeSi2
nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-
FeSi2
direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-
FeSi2
phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑
FeSi2
phase. We attempt to clarify the capability of the utilisation of the α-
FeSi2
phase as a buffer layer for the growth of β-
FeSi2
direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-
FeSi2
/α-,γ-,s-
FeSi2
/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-
FeSi2
/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-
FeSi2
{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-
FeSi2
/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-
FeSi2
layer between silicon and β-
FeSi2
phase. It is stated that the growth of metastable γ-
FeSi2
is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-
FeSi2
. Design and technological procedure for the synthesis of possible β-
FeSi2
/α-
FeSi2
/Si heterostructure have been proposed based on the results obtained.
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