Библиотека института физики им. Л.В. Киренского СО РАН

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Каталог книг и брошюр библиотеки ИФ СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Tambasov I. A., Bayukov O. A., Zhigalov V. S., Bykova L. E., Mikhlin Yu. L., Volochaev M. N., Bondarenko G. N.
Заглавие : Solid state synthesis and characterization of ferromagnetic nanocomposite Fe-In2O3 thin films
Место публикации : J. Alloys Compd.: Elsevier Science, 2014. - Vol. 612. - P.189-194. - ISSN 0925-8388, DOI 10.1016/j.jallcom.2014.05.176. - ISSN 1873-4669
Примечания : Cited References: 56
Предметные рубрики: HIGH-TEMPERATURE FERROMAGNETISM
PHASE-FORMATION
In2O
OXIDE
NANOPARTICLES
CO
SEMICONDUCTORS
NANOCRYSTALS
COMBUSTION
SYSTEMS
Ключевые слова (''Своб.индексиров.''): thermite reactions--reactive films--ferromagnetic nanocomposite films--transparent conducting oxides
Аннотация: We have successfully synthesized ferromagnetic Fe-In2O 3 nanocomposite thin films for the first time using the thermite reaction Fe2O3 + In = In2O3 + Fe. The initial In/Fe2O3 bilayers were obtained by the deposition of In layers on α-Fe2O3 films. The reaction occurs in a self-propagating mode in a homogeneous thermal film plane field at heating rates above 20 K/s and at temperatures above initiation temperature T[[d]]in[[/d]] ~ 180 °C. At heating rates lower than 20 K/s the mixing of the In and Fe2O3 layers occurs across the whole In/Fe2O3 interface and the synthesis of the ferromagnetic α-Fe phase starts above the initiation temperature T[[d]]in[[/d]] = 180 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Mossbauer spectroscopy, transmission electron microscopy and magnetic measurements were used for phase identification and microstructure observation of the synthesized Fe-In2O3 samples. The reaction products contain (1 1 0) textured α-Fe nanocrystals with a diameter around 100 nm and surrounded by an In2O3 matrix. These results enable new efficient low-temperature methods for synthesizing ferromagnetic nanocomposite films containing ferromagnetic nanoclusters embedded in transparent conducting oxides. © 2014 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Tarasov A. S., Ivanenko A. A., Bykova L. E., Nemtsev I. V., Eremin E. V., Yozhikova E. V.
Заглавие : Reversible UV induced metal-semiconductor transition in In2O3 thin films prepared by autowave oxidation
Коллективы : Federal Target Program [14.513.11.0023]; Russian Foundation for Basic Research [14-02-31156]
Место публикации : Semicond. Sci. Technol.: IOP Publishing, 2014. - Vol. 29, Is. 8. - Ст.82001. - ISSN 0268-1242, DOI 10.1088/0268-1242/29/8/082001. - ISSN 1361-6641
Примечания : Cited References: 56. - This work was supported by the Federal Target Program through Contract No 14.513.11.0023; the Russian Foundation for Basic Research, Project No. 14-02-31156.
Предметные рубрики: TRANSPARENT CONDUCTING OXIDES
Ga-DOPED ZnO
LOW-TEMPERATURE
HIGH-PERFORMANCE
SUBSTRATE-TEMPERATURE
INSULATOR-TRANSITION
ROOM-TEMPERATURE
TRANSISTORS
COMBUSTION
PHOTOREDUCTION
Ключевые слова (''Своб.индексиров.''): indium oxide thin films--autowave oxidation--metal-semiconductor transition--uv irradiation--photoreduction
Аннотация: We have prepared thin indium oxide films by the autowave oxidation reaction. Measurements of temperature dependence of resistivity, Hall carrier concentration and Hall mobility have been conducted in the temperature range 5-272 K. Before ultraviolet (UV) irradiation, the indium oxide film had a semiconductor-like temperature dependence of resistivity. and the ratio of rho (5 K)/rho(272 K) was very limited (similar to 1.2). It was found that after UV irradiation of the In2O3 film, the metal-semiconductor transition (MST) was observed at similar to 100 K. To show that this MST is reversible and repeatable, two full cycles of 'absence of MST-presence of MST' have been done using UV irradiation (photoreduction) as the induced mechanism and exposure to an oxygen environment as the reversible mechanism, respectively. MST in transparent conducting oxide (TCO) is possibly associated with the undoped structure of metal oxide, which has some disorder of oxygen vacancies. It was suggested that reversible UV induced metal-semiconductor transition would occur in other TCOs.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vereshchagin S. N., Solovyov L. A., Rabchevskii E. V., Dudnikov V. A., Ovchinnikov S. G., Anshits A. G.
Заглавие : Methane oxidation over A-site ordered and disordered Sr0.8Gd0.2CoO3−δ perovskites
Коллективы : SB RAS project [38]; RFBR [13-02-00358]
Место публикации : Chem. Commun.: Royal Society of Chemistry, 2014. - Vol. 50, Is. 46. - P.6112-6115. - ISSN 1359-7345, DOI 10.1039/c4cc00913d. - ISSN 1364-548X
Примечания : Cited References: 20. - The authors acknowledge the financial support from SB RAS project N 38 (2012) and RFBR grant 13-02-00358.
Предметные рубрики: MEMBRANE REACTORS
OXYGEN
OXIDES
PERFORMANCE
COMBUSTION
FEATURES
PHASES
Аннотация: A tetragonal phase Sr0.8Gd0.2CoO3−δ with ordered Gd3+/Sr2+ ions and oxygen vacancy sites is found to be about five times less active in the reaction of methane combustion than a quenched cubic perovskite phase with randomly distributed (disordered) Gd3+/Sr2+ ions over the A-sites of the crystal lattice.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Mal'tsev V. K.
Заглавие : Self-propagating high-temperature synthesis and solid-phase reactions in bilayer thin films
Место публикации : Tech. Phys.: AMER INST PHYSICS, 1998. - Vol. 43, Is. 10. - P1189-1192. - ISSN 1063-7842, DOI 10.1134/1.1259177
Примечания : Cited References: 14
Предметные рубрики: COMBUSTION
Аннотация: Self-propagating high-temperature synthesis (SHS) in Al/Ni, Al/Fe, and Al/Co bilayer thin films is investigated. It is established that SHS is achieved in thin films at initiation temperatures 300-350 degrees lower than in powders. The mechanism of SHS in thin films is similar to the process of explosive crystallization. It is shown that at the initial stage solid-phase reactions arising on the contact surface of condensate films can be self-propagating high-temperature synthesis. SHS could find application in different technologies for obtaining film components for microelectronics. (C) 1998 American Institute of Physics. [S1063-7842(98)01010-1].
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