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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Glushchenko G. A., Leonova T. A., Kolonenko A. L., Dudnik A. I., Osipova I. V., Vnukova N. G., Nemtsev I. V., Zharkov S. M., Churilov G. N.
Заглавие : Synthesis of 6H-SiC single-crystal nanowires in a flow of carbon-silicon high-frequency arc plasma
Место публикации : Phys. Solid State: Pleiades Publishing, 2014. - Vol. 56, Is. 10. - P.2107-2111. - ISSN 1063-7834, DOI 10.1134/S106378341410014X. - ISSN 1090-6460
Примечания : Cited References: 34. - This study was supported by the National Academy of Sciences of Belarus and the Siberian Branch of the Russian Academy of Sciences within the framework of the Interdisciplinary Integration project no. 24.
Предметные рубрики: LARGE-SCALE SYNTHESIS
BETA-SIC NANOWIRES
FIELD-EMISSION PROPERTIES
CARBIDE NANOWIRES
NANORODS
GROWTH
NANOSTRUCTURES
FULLERENES
DISCHARGE
Аннотация: Silicon carbide 6H-SiC nanoparticles and nanowires were obtained in carbon-silicon high-frequency arc plasma plasma in a helium atmosphere at a pressure of 0.1-0.6 MPa. It was shown that 6H-SiC nanowires grow from the arc plasma, as well as from the vapor, according to the known mechanism of vapor-solid condensation on a cold surface covered with single-crystal silicon carbide nuclei. The content of silicon carbide nanowires in the condensate reached 60 wt %. The obtained single-crystal silicon 6H-SiC nanowires had the diameter of 15-18 nm and length of 200-600 nm.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Semenov A. P., Semenova I. A., Bulina N. V., Lopatin V. A., Karmanov N. S., Churilov G. N.
Заглавие : Thin fullerene-containing films synthesized by ion beam sputtering of fullerene mixtures with doping additives in vacuum
Место публикации : Tech. Phys. Lett.: AMER INST PHYSICS, 2005. - Vol. 31, Is. 12. - P1022-1025. - ISSN 1063-7850, DOI 10.1134/1.2150887
Примечания : Cited References: 11
Предметные рубрики: DISCHARGE
Аннотация: A new approach to the synthesis of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of their occurrence between fullerene molecules. The proposed method has been experimentally implemented by using an Ar+ ion beam to sputter C-60 /C-70 fullerene mixtures (synthesized in a plasmachemical reactor at a pressure of 10(5) Pa) pressed into disk targets with a doping element (Fe, Na, B, Gd, or Se). The ion beam sputtering of dopant-containing fullerene mixtures in a vacuum of similar to 10(-2) Pa allowed micron-thick films containing C-60 and C-70 fullerenes and the corresponding dopant element (Fe, Na, B, Gd, or Se) to be grown on quartz substrates. (C) 2005 Pleiades Publishing, Inc.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dudnik A. I., Osipova I. V., Nikolaev N. S., Churilov G. N.
Заглавие : Comparative analysis of two methods for synthesis of fullerenes at different helium pressures
Коллективы : RFBRRussian Foundation for Basic Research (RFBR) [18-32-20011]
Место публикации : Fuller. Nanotub. Carbon Nanostruct. - 2020. - Vol. 28, Is. 9. - P.697-701. - ISSN 1536-383X, DOI 10.1080/1536383X.2020.1746281. - ISSN 1536-4046(eISSN)
Примечания : Cited References: 16. - The reported study was funded by RFBR according to the research project No 18-32-20011
Предметные рубрики: PLASMA
YIELD
DISCHARGE
PARAMETERS
DEPENDENCE
C60
Аннотация: The results of the effect of helium pressure in the chamber on the amount and composition of the produced fullerenes (C60, C70, etc.) synthesized in the arc plasma with graphite electrodes are presented. The findings obtained when the arc is powered by a direct (DC) and alternating (AC) currents of low frequency were compared in the same chamber with the electrodes located at the same angle to each other. These two methods are drastically different. The complete conversion of graphite into fullerene soot in AC occurs, but a part of the graphite is converted into a cathode deposit that does not contain fullerenes in DC, the relative amount of which increases when decreasing the helium pressure in the chamber. The highest fullerene content in fullerene soot of 10.2 wt.% is produced at a pressure of 127.5 kPa in AC arc, but in DC arc, the highest content of fullerenes in fullerene soot of 8.3 wt.% is produced at a pressure of 33.3 kPa.
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