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Каталог книг и брошюр библиотеки ИФ СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Bondarenko G. N., Mikhlin Y. L., Patrin G. S., Velikanov D. A.
Заглавие : Solid-state formation of ferromagnetic δ-Mn0.6Ga0.4 thin films with high rotatable uniaxial anisotropy
Место публикации : Phys. Status Solidi B: Wiley-VCH Verlag GMBH, 2012. - Vol. 249, Is. 8. - P.1541-1545. - ISSN 0370-1972, DOI 10.1002/pssb.201248064
Примечания : Cited References: 39
Предметные рубрики: EPITAXIAL-GROWTH
PERPENDICULAR ANISOTROPY
MAGNETIC-PROPERTIES
PHASE-FORMATION
GAAS
GAN
Ключевые слова (''Своб.индексиров.''): high anisotropy constants--mnxga1-x alloys--rotatable magnetic anisotropies--thin films
Аннотация: Solid-state reactions in Ga/Mn polycrystalline films of the composition 1 Ga:3 Mn were experimentally investigated. Our X-ray study showed that the formation of the Ga/Mn → (250 °C) ϕ-Ga7.7Mn2.3 → (350 °C) δ-Mn0.6Ga0.4 phase sequence occurs when the annealing temperature is increased to 400 °C. δ-Mn0.6Ga0.4 samples were found to have high rotatable uniaxial anisotropy. We also showed that magnetic fields with coercivities above H HC = 8.3 kOe can be used to orient the easy anisotropy axis in any spatial direction while taking the angle of the lag into account.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Badía-Romano L., Rubín J., Magén C., Bartolomé F., Sesé J., Ibarra M.R., Bartolomé J., Hierro-Rodriguez A., Martín J.I., Alameda J.M., Bürgler D.E., Varnakov S. N., Komogortsev S. V., Ovchinnikov S. G.
Заглавие : Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2014. - Vol. 364. - P.24-33. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.04.029. - ISSN 1873-4766
Примечания : Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza.
Предметные рубрики: SPUTTERED FE/SI SUPERLATTICES
INTERLAYER EXCHANGE
GIANT MAGNETORESISTANCE
MAGNETIC-PROPERTIES
SILICIDE FORMATION
EPITAXIAL-GROWTH
ROOM-TEMPERATURE
IRON DISILICIDE
TRILAYER FILMS
THIN-FILMS
Ключевые слова (''Своб.индексиров.''): fe-si multilayer--chemical transformation--fe silicide--interlayer exchange coupling--magnetic domain--in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5T800K). Films were prepared by thermal evaporation under ultrahigh vacuum onto a buffer layer of Fe/Ag deposited on a GaAs(001) substrate. Transmission electron microscopy reveals good epitaxial growth and phase transformations in the c-FeSi phase formed during deposition as well as upon subsequent annealing of the sample up to 800 K. Remanence to saturation magnetization MR/MS ratios and saturation fields are related to several types of interlayer exchange coupling. 90°-coupling and a superposition of 90° and antiferromagnetic interlayer exchange coupling are found depending on the Fe layer thickness. Magnetization curves were investigated as a function of temperature by in situ annealing. They show an irreversible thermal process as temperature increases from 300 to 450 K that is correlated to the formation of a ferromagnetic silicide phase. At higher temperature this phase transforms into a paramagnetic Fe–Si phase.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Yakovlev I. A., Molokeev M. S., Rautskii M. V., Nemtsev I. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Growth of α-FeSi2 nanocrystals on si(100) with Au catalyst
Место публикации : Mater. Lett.: Elsevier, 2016. - Vol. 168. - P.90-94. - ISSN 0167577X (ISSN), DOI 10.1016/j.matlet.2016.01.033
Примечания : Cited References: 25. - The work was supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 2886.2014.2), The Russian Foundation for Basic Research (RFBR) (Grants no. 13-02-01265), State Contract no. 02.G25.31.0043 and State Task no. 16.663.2014К).
Предметные рубрики: EPITAXIAL-GROWTH
LOW-TEMPERATURE
FeSi2
NANOWIRES
Si(111)
FILMS
Si
Ключевые слова (''Своб.индексиров.''): nanomaterials--molecular beam epitaxy--α-fesi2--electrode
Аннотация: Self-organized α-FeSi2 nanocrystals on (100) silicon substrate were synthesized by molecular beam epitaxy with Au catalyst. The microstructure and basic orientation relationship between the silicide nanocrystals and silicon substrate were analyzed in detail. α-FeSi2 nanocrystals appeared to be inclined trapezoid and rectangular nanoplates, polyhedral nanobars and pyramid-like ones, aligned along 011 directions on (100) silicon substrate with the length up to 1.5 μm, width ranging between 80 and 500 nm and thickness from 30 to 170 nm. As has been proposed metallic iron silicide may be used for manufacturing electric contacts on silicon. A current-voltage characteristic of the structure was measured at room temperature and showed good linearity.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Xia Y. F., Liu Y. G., Huang Z. H., Fang M. H., Molokeev M. S., Mei L. F.
Заглавие : Ca6La4(SiO4)2(PO4)4O2:Eu2+: a novel apatite green-emitting phosphor for near-ultraviolet excited w-LEDs
Место публикации : J. Mater. Chem. C: Royal Society of Chemistry, 2016. - Vol. 4, Is. 21. - P.4675-4683. - ISSN 2050-7526, DOI 10.1039/c6tc01418f. - ISSN 2050-7534(eISSN)
Примечания : Cited References:37. - This study was sponsored by the National Natural Science Foundation of China (Grant No. 51472223), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-12-0951) and the Fundamental Research Funds for the Central Universities (Grant No. 2652015020 and Grant No. 2652015008).
Предметные рубрики: SOLID-SOLUTION PHOSPHORS
PULSED-LASER DEPOSITION
HIGH THERMAL-STABILITY
WHITE-LIGHT
LUMINESCENCE PROPERTIES
ENERGY-TRANSFER
SINGLE-PHASE
CRYSTAL-STRUCTURE
RED LUMINESCENCE
EPITAXIAL-GROWTH
Аннотация: A novel apatite phosphor Ca6La4(SiO4)2(PO4)4O2:Eu2+ was prepared by conventional high-temperature solid-state reaction. Phase purity was examined by XRD and XPS analysis. The crystal structure information, such as space group, cell parameters and atomic coordinates, were refined by the Rietveld method, revealing that Eu2+ occupied the sites of Ca2+ ions. Moreover, low-temperature experiments, including low-temperature PL spectra and low-temperature decay curve, were used to prove the existence of two luminescence centers in Ca6La4(SiO4)2(PO4)4O2:Eu2+. With the increase in doping concentration of Eu2+, the emission wavelength shows a red shift from 498 nm to 510 nm, which is mainly caused by the increase in crystal-field splitting by Eu2+. The optimized concentration of Eu2+ was confirmed to be 0.01, the Rc was calculated to be 20.09 Å and the energy transfer between Eu2+ was demonstrated to be by exchange interaction. Moreover, good thermal stability has been proved by a temperature-dependence experiment; it shows that the phosphor can maintain 55% of emitting intensity at 150 °C compared to that at room temperature. Finally, the Ca6La4(SiO4)2(PO4)4O2:Eu2+ phosphor was fabricated with commercial red (CaAlSiN3:Eu2+) and blue (BAM:Eu2+) phosphor coating on a n-UV chip. This proves that this green phosphor has the potential to be used in a w-LED lamp.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Solov'ev L. A., Patrin G. S., Velikanov D. A.
Заглавие : Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase
Коллективы :
Разночтения заглавия :авие SCOPUS: Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the φ-Ga 7.7Mn 2.3 phase
Место публикации : JETP Letters. - 2010. - Vol. 92, Is. 10. - P.687-691. - ISSN 0021-3640, DOI 10.1134/S0021364010220108
Примечания : Cited References: 32. - This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 2.1.1/4399, the program "Development of the Research Potential of Higher Education in 2009-2010."
Предметные рубрики: PERPENDICULAR ANISOTROPY
EPITAXIAL-GROWTH
GA
SEMICONDUCTORS
SPINTRONICS
CRYSTAL
ALLOYS
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 phase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.
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