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Вид документа : Статья из журнала Шифр издания :
Автор(ы) : Tarasov I. A., Popov Z. I., Varnakov S. N., Molokeev M. S., Fedorov A. S., Yakovlev I. A., Fedorov D. A., Ovchinnikov S. G.
Заглавие : Optical characteristics of an epitaxial Fe3Si/Si(111) iron silicide film
Коллективы :
Russian Foundation for Basic Research [13-02-01265, 14-02-31309]; Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools [NSh-2886.2014.2]; Russian Ministry of Education and Science [02.G25.31.0043]; Presidium of the Russian Academy of Sciences [24.34]
Место публикации : JETP Letters. - 2014. - Vol. 99, Is. 10. - P.565-569. - ISSN 0021-3640, DOI 10.1134/S0021364014100105. - ISSN 1090-6487 Примечания : Cited References: 24. - This work was supported by the Russian Foundation for Basic Research (project nos. 13-02-01265 and 14-02-31309), by the Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. NSh-2886.2014.2), by the Russian Ministry of Education and Science (state contract no. 02.G25.31.0043), and by the Presidium of the Russian Academy of Sciences (program no. 24.34).
Предметные рубрики: INITIO MOLECULAR-DYNAMICS AUGMENTED-WAVE METHOD N-K PLANE GROWTH FE3-XMNXSI Аннотация: The dispersion of the relative permittivity E of a 27-nm-thick epitaxial Fe3Si iron silicide film has been measured within the E = 1.16-4.96 eV energy range using the spectroscopic ellipsometry technique. The experimental data are compared to the relative permittivity calculated in the framework of the density functional theory using the GGA-PBE approximation. For Fe3Si, the electronic structure and the electronic density of states (DOS) are calculated. The analysis of the frequencies corresponding to the transitions between the DOS peaks demonstrates qualitative agreement with the measured absorption peaks. The analysis of the single wavelength laser ellipsometry data obtained in the course of the film growth demonstrates that a continuous layer of Fe3Si iron silicide film is formed if the film thickness achieves 5 nm.
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