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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Isaenko L. I., Yelisseyev A. P., Lobanov S. I., Krinitsin P. G., Molokeev M. S.
Заглавие : Structure and optical properties of Li2Ga2GeS6 nonlinear crystal
Коллективы : Russian Foundation of Basic Research [15-02-03408a]
Место публикации : Opt. Mater.: Elsevier Science, 2015. - Vol. 47. - P.413-419. - ISSN 0925-3467, DOI 10.1016/j.optmat.2015.06.014
Примечания : Cited References:23. - This work was supported by the Russian Foundation of Basic Research (Grant No. 15-02-03408a)
Предметные рубрики: PHASE-MATCHING PROPERTIES
MID-IR
PARAMETRIC AMPLIFICATION
GENERATION
LiGaS2
GROWTH
DAMAGE
Ga
Te
Se
Ключевые слова (''Своб.индексиров.''): li2ga2ges6--structure--absorption--raman--luminescence--excitons
Аннотация: Structure and optical properties of new nonlinear crystal - Li2Ga2GeS6 single crystal of optical quality, grown by the Bridgman technique were studied. The data on transmission, Raman scattering, luminescence emission, excitation and thermal quenching as well as thermostimulated luminescence are presented. Fundamental absorption edge is determined by the direct allowed electronic transitions: The values of optical band gap are estimated. Absorption band at 8.0 mu m is due to S-S vibrations. Features in photoluminescence spectra are associated with excitons: both free (narrow line at 371 nm) and self-trapped ones (broad bands at 596, 730 and 906 nm). Spontaneous emission in the 80-170 K range, both at crystal heating and cooling, is typical of pyroelectrics: This confirms the absence of symmetry center in Li2Ga2GeS6 and an opportunity of laser frequency nonlinear conversion. (C) 2015 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Solov'ev L. A., Patrin G. S., Velikanov D. A.
Заглавие : Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase
Коллективы :
Разночтения заглавия :авие SCOPUS: Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the φ-Ga 7.7Mn 2.3 phase
Место публикации : JETP Letters. - 2010. - Vol. 92, Is. 10. - P.687-691. - ISSN 0021-3640, DOI 10.1134/S0021364010220108
Примечания : Cited References: 32. - This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 2.1.1/4399, the program "Development of the Research Potential of Higher Education in 2009-2010."
Предметные рубрики: PERPENDICULAR ANISOTROPY
EPITAXIAL-GROWTH
GA
SEMICONDUCTORS
SPINTRONICS
CRYSTAL
ALLOYS
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 phase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.
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