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полный	информационный	краткий

Поисковый запрос: (<.>S=Ge(111)<.>)

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
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