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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bulgakov E. N., Sadreev A. F.
Заглавие : Current-voltage characteristics of the resonant tunnelling double-barrier structure under time-periodical perturbation
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 1996. - Vol. 8, Is. 45. - P.8869-8887. - ISSN 0953-8984, DOI 10.1088/0953-8984/8/45/020
Примечания : Cited References: 38
Предметные рубрики: SEMICONDUCTOR DOUBLE-BARRIER
OSCILLATING QUANTUM-WELL
DEPENDENT TRANSPORT
INFRARED-RADIATION
TUNNELING TIMES
HETEROSTRUCTURES
TRANSMISSION
MODEL
FREQUENCIES
COHERENT
Аннотация: We consider a typical semiconductor resonant tunnelling GaAs/AlGaAs/GaAs nanostructure which forms a double-barrier potential with quasienergy levels corresponding to transition frequencies in the infrared and microwave regions. Two types of dynamical perturbation of the heterostructure in the form V-1(x, t) = V(1)x cos Omega t and V-2(t) = V-2 cos Omega t are considered. We analyse numerically a reconstruction of the electron transmission through the heterostructure and the current-voltage characteristics (IVC) under the influence of these dynamical perturbations. Both weak and strong perturbations are considered. We investigate the dependences of the transmission on the electron energy and the frequency of the external field with the main accent on the case where a frequency of the perturbation is tuned to a transition between quasienergies of the double-barrier structure. it is found that these resonant phenomena give rise to new peaks and dips in the IVC. In particular, it is shown that the dipole type of perturbation V-1(x, t) gives rise to a Rabi splitting of the transmission peaks and under certain conditions to a Rabi splining of the IVC peaks and dips. We demonstrate that dynamical perturbation may induce a direct current opposite to the direction of the applied voltage, and that this phenomenon takes the form of a sharp dip which has a resonant origin. It is observed that the dipole type of perturbation V-1(x, t) of laser radiation is more effective for tuning the IVC than the first perturbation V-2(t). Also absorption and emission of energy by an electron transmitted through the DBRTS are considered.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Berman G. P., Bulgakov E. N., Campbell D. K., Sadreev A. F.
Заглавие : Resonant tunneling in time-periodically modulated semiconductor nanostructures
Место публикации : Physica B. - 1996. - Vol. 225, Is. 1-2. - P.1-22. - ISSN 0921-4526, DOI 10.1016/0921-4526(96)00233-5
Примечания : Cited References: 39
Предметные рубрики: DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Parshin A. S., Igumenov A. Y., Mikhlin Y. L., Pchelyakov O. P., Zhigalov V. S.
Заглавие : Electron spectroscopy of iron disilicide
Место публикации : Tech. Phys. - 2016. - Vol. 61, Is. 9. - P.1418-1422. - ISSN 10637842 (ISSN), DOI 10.1134/S1063784216090176
Примечания : Cited References: 33
Предметные рубрики: SCATTERING CROSS-SECTIONS
ENERGY-LOSS SPECTROSCOPY
QUANTITATIVE-ANALYSIS
LOSS SPECTRA
SURFACE
SI
HETEROSTRUCTURES
INTERFACE
PARAMETER
PHASE
Аннотация: We have reported on the results of a complex investigation of iron disilicide FeSi2 using characteristic electron energy loss spectroscopy, inelastic electron scattering cross section spectroscopy, and X-ray photoelectron spectroscopy. It has been shown that the main peak in the spectra of inelastic electron scattering for FeSi2 is a superposition of two unresolved peaks, viz., surface and bulk plasmons. An analysis of the fine structure of the spectra of inelastic electron scattering cross section by their decomposition into Lorentzlike Tougaard peaks has made it possible to quantitatively estimate the contributions of individual energy loss processes to the resulting spectrum and determine their origin and energy. © 2016, Pleiades Publishing, Ltd.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volochaev M. N., Kalinin, Yu E., Kashirin M. A., Makagonov V. A., Pankov, S. Yu, Bassarab V. V.
Заглавие : Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films
Коллективы : Ministry of Science and Higher Education of the Russian Federation [3.1867.2017/4.6]
Место публикации : Semiconductors. - 2019. - Vol. 53, Is. 11. - P.1465-1471. - ISSN 1063-7826, DOI 10.1134/S106378261911023X. - ISSN 1090-6479(eISSN)
Примечания : Cited References: 16. - This study was carried out in the framework of the state assignment of the Ministry of Science and Higher Education of the Russian Federation, project no. 3.1867.2017/4.6.
Предметные рубрики: HETEROSTRUCTURES
Аннотация: (ZnO/SiO2)25 thin-film multilayers consisting of nanocrystalline ZnO layers and amorphous SiO2 spacers with a bilayer thickness from 6 to 10 nm are synthesized in a single deposition process. An analysis of the temperature dependences of the electrical resistivity of (ZnO/SiO2)25 thin films shows that, in the temperature range of 77–300 K, the dominant conductivity mechanism successively changes from hopping conductivity with a variable hopping length in a narrow energy band near the Fermi level at temperatures of 77–250 K to thermally activated impurity conductivity around room temperature. Using the obtained temperature dependences of the electrical resistivity, the effective density of localized states at the Fermi level and the activation energy of impurity levels are estimated. The effect of heat treatment on the structure and electrical properties of the synthesized films is examined. It is established that in (ZnO/SiO2)25 thin-film systems at temperatures of 580–600°C, the ZnO and SiO2 layers chemically interact, which is accompanied by destruction of the multilayer structure and formation of the Zn2SiO4 compound with a tetragonal structure (sp. gr. I-42d).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bikbaev R. G., Vetrov S. Ya., Timofeev I. V.
Заглавие : Hyperbolic metamaterial for the Tamm plasmon polariton application
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [18-32-00053, 19-42-240004, 19-52-52006]
Место публикации : J. Opt. Soc. Am. B. - 2020. - Vol. 37, Is. 8. - P.2215-2220. - ISSN 0740-3224, DOI 10.1364/JOSAB.394935. - ISSN 1520-8540(eISSN)
Примечания : Cited References: 51. - Russian Foundation for Basic Research (18-32-00053, 19-42-240004, 19-52-52006)
Предметные рубрики: PHOTONIC CRYSTAL
PERFECT ABSORBER
STATES
HETEROSTRUCTURES
Аннотация: The possibility of using a hyperbolic metamaterial to form conventional and epsilon-near-zero Tamm plasmon polaritons in the near-infrared and visible spectral ranges is demonstrated. The spectral properties of the hyperbolic metamaterial are investigated in the framework of the effective medium theory and confirmed by the transfer matrix method. It is found that at the oblique incidence of light onto a structure, the I-type hyperbolic metamaterial can be implemented, while II-type cannot. The sensitivity of the epsilon-near-zero wavelength to the variation in the angle of light incidence for TE and TM waves is demonstrated. It is shown that both the high-quality and broadband Tamm plasmon polaritons are excited in the investigated structures.
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