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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Ivanenko A. A., Bykova L. E., Yozhikova E. V., Maksimov I. A., Ivanov V. V.
Заглавие : Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation
Коллективы : Ministry of Education and Science of the Russian Federation [14.513.11.0023]
Место публикации : Semiconductors: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 48, Is. 2. - P.207-211. - ISSN 1063-7826, DOI 10.1134/S1063782614020286. - ISSN 1090-6479
Примечания : Cited References: 42. - This study was supported by the Ministry of Education and Science of the Russian Federation, Federal Targeted Program "Research and Development in Priority Fields of Development of the Science and Technology Complex of Russia for 2007-2013", state contract no. 14.513.11.0023.
Предметные рубрики: GAS SENSOR RESPONSE
INDIUM OXIDE-FILMS
THIN-FILMS
HIGH-PERFORMANCE
TIN OXIDE
TRANSPARENT CONDUCTORS
SUBSTRATE-TEMPERATURE
ROOM-TEMPERATURE
TRANSISTORS
PHOTOREDUCTION
Аннотация: Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Omega s(-1) during the first 30 s and 7 Omega s(-1) over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 mu m. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s(-1). It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Tarasov A. S., Ivanenko A. A., Bykova L. E., Nemtsev I. V., Eremin E. V., Yozhikova E. V.
Заглавие : Reversible UV induced metal-semiconductor transition in In2O3 thin films prepared by autowave oxidation
Коллективы : Federal Target Program [14.513.11.0023]; Russian Foundation for Basic Research [14-02-31156]
Место публикации : Semicond. Sci. Technol.: IOP Publishing, 2014. - Vol. 29, Is. 8. - Ст.82001. - ISSN 0268-1242, DOI 10.1088/0268-1242/29/8/082001. - ISSN 1361-6641
Примечания : Cited References: 56. - This work was supported by the Federal Target Program through Contract No 14.513.11.0023; the Russian Foundation for Basic Research, Project No. 14-02-31156.
Предметные рубрики: TRANSPARENT CONDUCTING OXIDES
Ga-DOPED ZnO
LOW-TEMPERATURE
HIGH-PERFORMANCE
SUBSTRATE-TEMPERATURE
INSULATOR-TRANSITION
ROOM-TEMPERATURE
TRANSISTORS
COMBUSTION
PHOTOREDUCTION
Ключевые слова (''Своб.индексиров.''): indium oxide thin films--autowave oxidation--metal-semiconductor transition--uv irradiation--photoreduction
Аннотация: We have prepared thin indium oxide films by the autowave oxidation reaction. Measurements of temperature dependence of resistivity, Hall carrier concentration and Hall mobility have been conducted in the temperature range 5-272 K. Before ultraviolet (UV) irradiation, the indium oxide film had a semiconductor-like temperature dependence of resistivity. and the ratio of rho (5 K)/rho(272 K) was very limited (similar to 1.2). It was found that after UV irradiation of the In2O3 film, the metal-semiconductor transition (MST) was observed at similar to 100 K. To show that this MST is reversible and repeatable, two full cycles of 'absence of MST-presence of MST' have been done using UV irradiation (photoreduction) as the induced mechanism and exposure to an oxygen environment as the reversible mechanism, respectively. MST in transparent conducting oxide (TCO) is possibly associated with the undoped structure of metal oxide, which has some disorder of oxygen vacancies. It was suggested that reversible UV induced metal-semiconductor transition would occur in other TCOs.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Gornakov K. O., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Yozhikova E. V.
Заглавие : Room temperature magneto-transport properties of nanocomposite Fe–In2O3 thin films
Место публикации : Physica B. - 2015. - Vol. 478. - P.135-137. - ISSN 0921-4526, DOI 10.1016/j.physb.2015.08.054
Примечания : Cited References: 28. - This study was supported by the Russian Foundation for Basic Research (Grants # 15-02-00948-A,), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the program of Foundation for Promotion of Small Enterprises in Science and Technology (No 6662 FY2015) ("UMNIK" program).
Предметные рубрики: Doped In2O3 Films
High-performance
Indium oxide
Transistors
Magnetoresistance
Ferromagnetism
Ключевые слова (''Своб.индексиров.''): indium oxide--fe-in2o3 thin films--weak localization--disordered semiconductors
Аннотация: A ferromagnetic Fe–In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe–In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe–In2O3 thin film had n=1.94·1020 cm−3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~−0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.
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