Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>S=MNS<.>)

Общее количество найденных документов : 3
Показаны документы с 1 по 3

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Galyas A. I., Sokolov V. V.
Заглавие : Study of electrical and thermoelecrical properties of sulfides TmxMn1-xS
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 58, Is. 1. - P.19-24. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783416010029
Примечания : Cited References: 25. - This study was supported by the Russian Foundation for Basic Research (project no. 15-42-04099 r_si-bir_a) and State Contract no. 114090470016.
Предметные рубрики: SmxMn1-xS solid-solutions
MnS
Gd
Transition
Transport
Crystal
Аннотация: Variable-valence TmxMn1–xS (0 ⩽ x ⩽ 0.15) compounds have been synthesized and their structural, electrical, and thermoelectrical properties have been studied in the temperature range of 80–1100 K. The regions of existence of solid solutions of sulfides TmxMn1–xS with the NaCl-type fcc lattice have been determined. It has been found that, as thulium ions are substituted for manganese cations, the electrical resistivity increases, and the lattice parameter increases more sharply than that corresponding to the Vegard’s law. The study of the temperature dependences of the thermopower coefficient has revealed that the current carrier sign is retained to 500 K for all the substitution concentrations, and the charge carrier type changes from the hole type to the electron type with variations in the temperature. The experimental data have been explained in terms of the exciton model.
Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Abramova G. M., Petrakovskii G. A., Kartashev A. V., Volkov N. V., Velikanov D. A., Sokolov V. V., Pichugin A. Y.
Заглавие : Heat Capacity and Thermal Conductivity of FexMn1-xS Single Crystals
Разночтения заглавия :авие SCOPUS: Heat capacity and thermal conductivity of Fe xMn 1 - xS single crystals
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 53, Is. 1. - P76-79. - ISSN 1063-7834, DOI 10.1134/S1063783411010021
Примечания : Cited References: 8
Предметные рубрики: MNS
Аннотация: This paper reports on the results of investigations of the thermal properties and thermal conductivity of single crystals of homogeneous solid solutions FexMn1-xS with a cubic NaCl structure, which have been prepared by the cation substitution for divalent manganese ions in manganese monosulfide. It has been revealed that the heat capacity and thermal conductivity exhibit anomalies in the range of the magnetic transition. The cation substitution is accompanied by an increase in the phase transition temperature.
WOS,
Scopus,
Читать в сети ИФ
Найти похожие

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ryabinkina L. I., Abramova G. M., Romanova O. B., Kiselev N. I.
Заглавие : Hall effect in the FexMn1-xS magnetic semiconductors
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 6. - P1068-1072. - ISSN 1063-7834, DOI 10.1134/1.1767246
Примечания : Cited References: 17
Предметные рубрики: MAGNETORESISTANCE
FIELDS
MNS
Аннотация: The electrical properties and the Hall effect in the FexMn1-xS magnetic semiconductors (0less than or equal toxless than or equal to0.5) have been experimentally studied in the range 77-300 K in magnetic fields of up to 15 kOe. The cation-substituted sulfides with 0.25less than or equal toxless than or equal to0.3 possessing colossal magnetoresistance (CMR) were established to be narrow-gap semiconductors with carrier concentrations nsimilar to10(11)-10(15) cm(-3) and high carrier mobilities musimilar to 10(2)-10(4) cm(2) V-1 s(-1). It is believed that the CMR effect in these sulfides can be explained in terms of the model of magnetic and electron phase separation, which is analogous to the percolation theory in the case of heavily doped semiconductors. (C) 2004 MAIK "Nauka/Interperiodica".
WOS,
Scopus,
Читать в сети ИФ
Найти похожие