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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Янушкевич, Казимир Иосифович
Заглавие : Magnetoresistance effect in anion-substituted manganese chalcogenides
Место публикации : Phys. Status Solidi B. - 2015. - Vol. 252, Is. 8. - P.1792-1798. - ISSN 0370, DOI 10.1002/pssb.201451607. - ISSN 15213951 (eISSN)
Примечания : Cited References: 35. - This study was supported by the official assignment no. 114090470016.
Предметные рубрики: MAGNETIC-PROPERTIES
ELECTRONIC-STRUCTURE
SOLID-SOLUTIONS
MnTe
MnSe
CONDUCTIVITY
TRANSITION
Ключевые слова (''Своб.индексиров.''): electron tunneling--magnetic properties--magnetoresistance--semiconductors
Аннотация: The electric and magnetic properties of anion-substituted antiferromagnetic MnSe1-xTex (0.1≤x≤0.4) semiconductors in the 77-700K temperature range and magnetic fields under 1T are studied. In the MnSe1-xTex solid solutions, negative magnetoresistance in the vicinity of the Néel temperature for x=0.1 and for composition with x=0.2 in the paramagnetic range below 270K is revealed. A dependence of the magnetic susceptibility versus the prehistory of the samples is found. The model of localized spin-polarized electrons with the localization radius depending on the magnetic field is proposed for x=0.1. In the paramagnetic range, the negative magnetoresistance and the behavior of magnetic moment are a result of orbital glass formation.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Sitnikov M. N., Kretinin V. V., Galyas, A., I, Yanushkevich, K., I
Заглавие : The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films
Коллективы : Russian Foundation for Basic Research (RFBR) [18-52-00009 Bel_a, 18-32-00079 mol_a, 18-42-240001 r_a]; [3.5743.2017/6.7]
Место публикации : Semicond. Sci. Technol. - 2018. - Vol. 33, Is. 8. - Ст.085006. - ISSN 0268-1242, DOI 10.1088/1361-6641/aace44. - ISSN 1361-6641(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project No 18-52-00009 Bel_a; No 18-32-00079 mol_a; No 18-42-240001 r_a; the state order No 3.5743.2017/6.7.
Предметные рубрики: NEUTRON-SCATTERING
SURFACE-STATES
MNTE
CONDUCTIVITY
MECHANISM
Ключевые слова (''Своб.индексиров.''): polycrystalline films--magnetoresistance--impedance--polaron--magnetic--properties--thermoelectric
Аннотация: The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe1−X Te Х (0.3 ≤ X ≤ 0.4) manganese chalcogenide films in the temperature range of 80–400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1–1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.
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