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Myagkov, V. G. Epitaxial B2-NiAl layers formed by nanosecond laser irradiation of thin Al/Ni bilayers / V. G. Myagkov, L. E. Bykova, G. N. Bondarenko> // Tech. Phys. Lett. - 2006. - Vol. 32, Is. 10. - P. 827-830, DOI 10.1134/S1063785006100026. - Cited References: 18
. - ISSN 1063-7850РУБ Physics, Applied Рубрики: POWDER MIXTURES TRANSFORMATION TRANSITIONS OLIVINE SURFACE Аннотация: The results of experiments on the synthesis of epitaxial B2-NiAl layers by means of nanosecond laser irradiation of sequentially deposited thin nickel and aluminum layers (Al/Ni bilayers) on a MgO(001) substrate surface are presented. Features of the phase formation under the laser action and during the combustion wave initiation are considered. The rapid formation of an epitaxial B2-NiAl layer is explained in terms of a martensitic-like mechanism of the transfer of reacting atoms via a layer of reaction products. It is suggested that this mechanism can compete with diffusion via grain boundaries and dislocation, thus explaining the ultrafast transfer of reacting atoms via a layer of reaction products for various methods of initiation of the solid-state synthesis.
WOS, Scopus, Читать в сети ИФ Держатели документа: Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk, Russia Russian Acad Sci, Siberian Div, Inst Chem & Chem Technol, Krasnoyarsk, Russia ИФ СО РАН ИХХТ СО РАН Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Russian Federation Institute of Chemistry and Chemical Technology, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, Russian Federation Доп.точки доступа: Bykova, L. E.; Быкова, Людмила Евгеньевна; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Мягков, Виктор Григорьевич } Найти похожие
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