Библиотека института физики им. Л.В. Киренского СО РАН

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Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Gomoyunova M. V., Grebenyuk G. S., Zabluda V. N., Ovchinnikov S. G., Pronin I. I.
Заглавие : Initial growth stages of manganese films on the Si(100)2 x 1 surface
Коллективы : Russian-German Laboratory at HZB BESSY; Ministry of Education and Science of the Russian Federation [14V37.21.1276]; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 2. - P.380-384. - ISSN 1063-7834, DOI 10.1134/S1063783414020310. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Ministry of Education and Science of the Russian Federation (agreement 14V37.21.1276), and the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265).
Предметные рубрики: PHOTOELECTRON-SPECTROSCOPY
ROOM-TEMPERATURE
SILICIDES
SILICON
Аннотация: Initial growth stages of manganese films on the Si(100)2 × 1 surface at room temperature have been investigated using high-energy-resolution photoelectron spectroscopy, and the dynamics of the variation in their phase composition and electronic structure with the coverage growth has been revealed. It has been shown that the interfacial manganese silicide and the film of the solid solution of silicon in manganese are sequentially formed under these conditions on the silicon surface. The growth of the metal manganese film starts after the deposition of ~0.9 nm Mn. Segregation of silicon on the film surface is observed in the range of coverages up to 1.6 nm Mn.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Gomoyunova M. V., Grebenyuk G.S ., Zabluda V. N., Ovchinnikov S. G., Pronin I. I.
Заглавие : Solid-phase synthesis of manganese silicides on the Si(100)2 x 1 surface
Коллективы : Russian-German Laboratory at HZB BESSY; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]; Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools [NSh-1044.2012.2]; Siberian Branch of the Russian Academy of Sciences [85]; Ural Branch of the Russian Academy of Sciences [85]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 4. - P.812-815. - ISSN 1063-7834, DOI 10.1134/S1063783414040337. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265), the Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools (grant no. NSh-1044.2012.2), and the Integration Project No. 85 of the Siberian and Ural Branches of the Russian Academy of Sciences.
Предметные рубрики: PHOTOELECTRON-SPECTROSCOPY
GROWTH
FILMS
Аннотация: The solid-phase synthesis of manganese silicides on the Si(100)2 × 1 surface coated at room temperature by a 2-nm-thick manganese film has been investigated using high-energy-resolution photoelectron spectroscopy with synchrotron radiation. The dynamics of variation of the phase composition and electronic structure of the near-surface region with increasing sample annealing temperature to 600°C, has been revealed. It has been shown that, under these conditions, a solid solution of silicon in manganese, metallic manganese monosilicide MnSi, and semiconductor silicide MnSi1.7 are successively formed on the silicon surface. The films of both silicides are not continuous, with the fraction of the substrate surface occupied by them decreasing with increasing annealing temperature. The binding energies of the Si 2p and Mn 3p electrons in the compounds synthesized have been determined.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Bayukov O. A., Mikhlin Y. L., Zhigalov V. S., Bykova L. E., Bondarenko G. N.
Заглавие : Long-range chemical interactions in solid-state reactions: effect of an inert Ag interlayer on the formation of L10-FePd in epitaxial Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1) trilayers
Место публикации : Philos. Mag.: Taylor & Francis, 2014. - Vol. 94, Is. 23. - P.2595-2622. - ISSN 1478-6435, DOI 10.1080/14786435.2014.926037. - ISSN 1478-6443
Примечания : Cited References: 117
Предметные рубрики: HIGH-TEMPERATURE SYNTHESIS
THIN-FILMS
PHASE-FORMATION
MAGNETIC-PROPERTIES
X-RAY
MARTENSITIC TRANSFORMATIONS
PHOTOELECTRON-SPECTROSCOPY
STRUCTURAL CHARACTERISTICS
CASIMIR FORCE
GOLD-FILMS
Ключевые слова (''Своб.индексиров.''): fe-pd system--epitaxial thin film--inert ag buffer layer--diffusion--solid-state reactions--l1(0)--long-range chemical interactions
Аннотация: The effect of 0, 0.5, and 1 μm-thick Ag interlayers on the chemical interaction between Pd and Fe in epitaxial Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1)/MgO(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1)/MgO(0 0 1) trilayers has been studied using X-ray diffraction, 57Fe Mössbauer spectroscopy, X-ray photoelectron spectroscopy, and magnetic structural measurements. No mixing of Pd and Fe occurs via the chemically inert Ag layer at annealing temperatures up to 400 °C. As the annealing temperature is increased above 400 °C, a solid-state synthesis of an ordered L10-FePd phase begins in the Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1) film trilayers regardless of the thickness of the buffer Ag layer. In all samples, annealing above 500 °C leads to the formation of a disordered FexPd1−x(0 0 1) phase; however, in samples lacking the Ag layer, the synthesis of FexPd1−x is preceded by the formation of an ordered L12-FePd3 phase. An analysis of the X-ray photoelectron spectroscopy results shows that Pd is the dominant moving species in the reaction between Pd and Fe. According to the preliminary results, the 2.2 μm-thick Ag film does not prevent the synthesis of the L10-FePd phase and only slightly increases the phase’s initiation temperature. Data showing the ultra-fast transport of Pd atoms via thick inert Ag layers are interpreted as direct evidence of the long-range character of the chemical interaction between Pd and Fe. Thus, in the reaction state, Pd and Fe interact chemically even though the distance between them is about 104 times greater than an ordinary chemical bond length.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Atuchin V. V., Khyzhun O. Y., Chimitova O. D., Molokeev M. S., Gavrilova T. A., Bazarov B. G., Bazarova J. G.
Заглавие : Electronic structure of β-RbNd(MoO4)2 by XPS and XES
Коллективы : Ministry of Education and Science of the Russian Federation; RFBR [12-02-90806-mol_rf_nr]
Место публикации : J. Phys. Chem. Solids. - 2015. - Vol. 77. - P.101-108. - ISSN 0022-3697, DOI 10.1016/j.jpcs.2014.09.012
Примечания : Cited References: 52. - This study was partially supported by the Ministry of Education and Science of the Russian Federation and RFBR Grant 12-02-90806-mol_rf_nr.
Предметные рубрики: RAY-EMISSION-SPECTROSCOPY
CRYSTAL-STRUCTURE
PHOTOELECTRON-SPECTROSCOPY
LUMINESCENCE PROPERTIES
VIBRATIONAL PROPERTIES
PHOTOEMISSION SPECTRA
OPTICAL-PROPERTIES
TERNARY MOLYBDATE
AB-INITIO
SYSTEM
Ключевые слова (''Своб.индексиров.''): inorganic compounds--chemical synthesis--photoelectron spectroscopy--x-ray diffraction--electronic structure
Аннотация: β-RbNd(MoO4)2 microplates have been prepared by the multistage solid state synthesis method. The phase composition and micromorphology of the final product have been evaluated by XRD and SEM methods. The electronic structure of β-RbNd(MoO4)2 molybdate has been studied employing the X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES). For the molybdate, the XPS core-level and valence-band spectra, as well as XES bands representing energy distribution of the Mo 4d- and O 2p-like states, have been measured. It has been established that the O 2p-like states contribute mainly to the upper portion of the valence band with also significant contributions throughout the whole valence-band region. The Mo 4d-like states contribute mainly to a lower valence band portion
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