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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Tambasov I. A., Bayukov O. A., Zhigalov V. S., Bykova L. E., Mikhlin Yu. L., Volochaev M. N., Bondarenko G. N.
Заглавие : Solid state synthesis and characterization of ferromagnetic nanocomposite Fe-In2O3 thin films
Место публикации : J. Alloys Compd.: Elsevier Science, 2014. - Vol. 612. - P.189-194. - ISSN 0925-8388, DOI 10.1016/j.jallcom.2014.05.176. - ISSN 1873-4669
Примечания : Cited References: 56
Предметные рубрики: HIGH-TEMPERATURE FERROMAGNETISM
PHASE-FORMATION
In2O
OXIDE
NANOPARTICLES
CO
SEMICONDUCTORS
NANOCRYSTALS
COMBUSTION
SYSTEMS
Ключевые слова (''Своб.индексиров.''): thermite reactions--reactive films--ferromagnetic nanocomposite films--transparent conducting oxides
Аннотация: We have successfully synthesized ferromagnetic Fe-In2O 3 nanocomposite thin films for the first time using the thermite reaction Fe2O3 + In = In2O3 + Fe. The initial In/Fe2O3 bilayers were obtained by the deposition of In layers on α-Fe2O3 films. The reaction occurs in a self-propagating mode in a homogeneous thermal film plane field at heating rates above 20 K/s and at temperatures above initiation temperature T[[d]]in[[/d]] ~ 180 °C. At heating rates lower than 20 K/s the mixing of the In and Fe2O3 layers occurs across the whole In/Fe2O3 interface and the synthesis of the ferromagnetic α-Fe phase starts above the initiation temperature T[[d]]in[[/d]] = 180 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Mossbauer spectroscopy, transmission electron microscopy and magnetic measurements were used for phase identification and microstructure observation of the synthesized Fe-In2O3 samples. The reaction products contain (1 1 0) textured α-Fe nanocrystals with a diameter around 100 nm and surrounded by an In2O3 matrix. These results enable new efficient low-temperature methods for synthesizing ferromagnetic nanocomposite films containing ferromagnetic nanoclusters embedded in transparent conducting oxides. © 2014 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kovaleva E. A., Kuzubov A. A., Avramov P. V., Kuklin A. V., Mikhaleva N. S., Krasnov P. O.
Заглавие : Characterization of LSMO/C60 spinterface by first-principle calculations
Место публикации : Org. Electron.: Phys. Mater. Appl.: Elsevier, 2016. - Vol. 37. - P.55-60. - ISSN 15661199 (ISSN), DOI 10.1016/j.orgel.2016.06.021
Примечания : Cited References: 40. - This work was supported by the Russian Scientific Fund (Project No. 14-13-00139). The authors would like to thank Institute of Computational Modeling of SB RAS, Krasnoyarsk; Joint Supercomputer Center of RAS, Moscow; Center of Equipment for Joint Use of Siberian Federal University, Krasnoyarsk; ICC of Novosibirsk State University and Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk for providing the access to their supercomputers.
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE METHOD
ORGANIC SPIN-VALVES
BASIS-SET
SEMICONDUCTORS
INJECTION
SPINTRONICS
TEMPERATURE
ALGORITHM
Ключевые слова (''Своб.индексиров.''): c60--lsmo--spinterface--dft--magnetic ordering
Аннотация: Spinterface between fullerene C60 and La0 7Sr0 3MnO3 (LSMO) was studied by means of density functional theory. Co-existence of many different configurations was shown, and probabilities of their appearance were estimated. Dependence of composite properties on configuration and temperature was also investigated. Key role of transition metal atoms in both binding between composite compartments and magnetic ordering in C60 molecule was discussed. The latter was suggested to be responsible for spin-polarized charge transport while overall magnetic moment of fullerene molecule is relatively small. © 2016 Elsevier B.V.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Solov'ev L. A., Patrin G. S., Velikanov D. A.
Заглавие : Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the I center dot-Ga7.7Mn2.3 phase
Коллективы :
Разночтения заглавия :авие SCOPUS: Solid-state reactions in Ga/Mn thin films: Formation and magnetic properties of the φ-Ga 7.7Mn 2.3 phase
Место публикации : JETP Letters. - 2010. - Vol. 92, Is. 10. - P.687-691. - ISSN 0021-3640, DOI 10.1134/S0021364010220108
Примечания : Cited References: 32. - This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 2.1.1/4399, the program "Development of the Research Potential of Higher Education in 2009-2010."
Предметные рубрики: PERPENDICULAR ANISOTROPY
EPITAXIAL-GROWTH
GA
SEMICONDUCTORS
SPINTRONICS
CRYSTAL
ALLOYS
Аннотация: Experimental results concerning the solid-state synthesis of the I center dot-Ga7.7Mn2.3 phase in Ga/Mn thin films are presented. A ferromagnetic (or ferrimagnetic) state is observed in the samples annealed at temperatures above 250A degrees C. The X-ray diffraction studies demonstrate the formation of the I center dot-Ga7.7Mn2.3 phase, which is poly-crystalline being grown on glass substrates and exhibits the preferential cube-on-cube orientation on MgO(001) substrates. A strong dependence of the perpendicular anisotropy constant K (aSyen) and of the effective biaxial anisotropy constant K (1) (eff) on the magnetic field H has been found. Owing to such dependence, the easy axis of magnetization lying in the plane of the film changes its direction approaching the film normal when the increasing magnetic field exceeds 8 kOe. The anomalous behavior of K (aSyen) and K (1) (eff) constants is explained both by the in-plane stresses arising in the course of the formation of the I center dot-Ga7.7Mn2.3 phase and by the direct dependence of magnetostriction constants on the magnetic field. For the I center dot-Ga7.7Mn2.3 phase, the saturation magnetization M (S) has been determined and the first magnetocrystalline anisotropy constant K (1) has been estimated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Abramova G. M., Petrakovskii G. A.
Заглавие : Metal-insulator transition, magnetoresistance, and magnetic properties of 3d-sulfides (Review)
Место публикации : Low Temp. Phys. - 2006. - Vol. 32, Is. 8-9. - P.725-734. - ISSN 1063-777X, DOI 10.1063/1.2219495; \b Физика низких температур
Примечания : Cited References: 74
Предметные рубрики: GIANT-MAGNETORESISTANCE
PHASE-TRANSITION
ALPHA-MNS
COLOSSAL MAGNETORESISTANCE
SINGLE-CRYSTALS
FES-MNS
SULFIDES
FERROMAGNETISM
SEMICONDUCTORS
TEMPERATURE
Аннотация: The results of a study of the transport and magnetic properties of some sulfides of 3d elements are reported. The concentration transitions with a change of conductivity type and a change of magnetic order are considered, and the features of the colossal magnetoresistance in FexMn1-xS and CuVxCr1-xS2 solid solutions are discussed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Babkina I. V., Volochaev M. N., Zhilova O. V., Kalinin, Yu. E., Makagonov V. A., Pankov, S. Yu., Sitnikov A. V.
Заглавие : Electrical properties of thin In2O3/C films
Коллективы : Russian Federation Ministry of Science and Higher Education [3.1867, 2017/4.6]
Место публикации : Inorg. Mater. - 2020. - Vol. 56, Is. 4. - P.374-381. - ISSN 0020-1685, DOI 10.1134/S0020168520040019. - ISSN 1608-3172(eISSN)
Примечания : Cited References: 26. - This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 3.1867, 2017/4.6).
Предметные рубрики: SEMICONDUCTORS
GAS
Аннотация: We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80-300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h 70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.
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