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Вид документа : Статья из журнала Шифр издания :
Автор(ы) : Pashen'kin, I. Yu, Sapozhnikov, M., V, Gusev N. S., Rogov V. V., Tatarskii D. A., Fraerman A. A., Volochaev M. N.
Заглавие : Magnetoelectric effect in CoFeB/MgO/CoFeB magnetic tunnel junctions
Место публикации : JETP Lett. - 2020. - Vol. 111, Is. 12. - P.690-693. - ISSN 0021-3640, DOI 10.1134/S0021364020120115. - ISSN 1090-6487(eISSN) Примечания : Cited References: 13
Предметные рубрики: SPIN-TRANSFER-TORQUE TOGGLE MRAM MAGNETORESISTANCE Аннотация: The possibility of electrical control of the interlayer exchange interaction in CoFeB/MgO/CoFeB tunnel junctions exhibiting magnetoresistance of ~200% is studied. It is shown that the increase in the applied voltage from 50 mV to 1.25 V leads to a shift of the magnetization curve of the free layer by 10 Oe at a current density of ~103 A/cm2. The discovered effect can be used in the development of energy-efficient random access memory.
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