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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetic-field-driven electron transport in ferromagnetic/ insulator/ semiconductor hybrid structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.140-143. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.092. - ISSN 1873-4766(eISSN)
Примечания : Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K.
Предметные рубрики: SPINTRONICS
BREAKDOWN
SILICON
SPIN
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photovoltage
Аннотация: Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Peng J. L., Bulcock S., Belobrov P. I., Bursill L. A.
Заглавие : Surface bonding states of nano-crystalline diamond balls
Место публикации : Int. J. Mod. Phys. B: WORLD SCIENTIFIC PUBL CO PTE LTD, 2001. - Vol. 15, Is. 31. - P4071-4085. - ISSN 0217-9792, DOI 10.1142/S0217979201007865
Примечания : Cited References: 20
Предметные рубрики: PLASMON RESPONSE
POWDER
SPECTROSCOPY
MICROSCOPY
SILICON
SI(111)
Ключевые слова (''Своб.индексиров.''): diamond--article--crystal structure--electron--energy transfer--nanoparticle--particulate matter--structure analysis--surface property--transmission electron microscopy
Аннотация: The rough surface of nano-crystalline diamond spheres induces surface electronic states which appear as a broadened pre-peak over approx. 15 eV at the C K-edge energy threshold for carbon in the parallel electron energy loss spectrum (PEELS). This appears to be at least partially due to 1s-pi* transitions, although typically the latter occupy a range of only 4 eV for the sp(2) edge of highly-oriented pyrollytic graphite (HOPG). No pi* electrons appear in the conduction band inside the diamond particles, where all electrons are sp(3) hybridized. PEELS data were also obtained from a chemical vapour deposited diamond film (CVDF) and gem-quality diamond for comparison with the spectra of nano-diamonds. The density of sp(2) and sp(3) states on the surface of diamond nano-crystals is calculated for simple structural models of the diamond balls, including some conjecture about surface structures. The results are used to interpret the sp(2)/sp(3) ratios measured from the PEELS spectra recorded as scans across the particles. Surface roughness at the atomic scale was also examined using high-resolution transmission electron microscopy (HRTEM) and electron nano-diffraction patterns were used to confirm the crystal structures.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Arkhipkin V. G., Gunyakov V. A., Myslivets S. A., Gerasimov V. P., Zyryanov V. Y., Vetrov S. Y., Shabanov V. F.
Заглавие : One-dimensional photonic crystals with a planar oriented nematic layer: Temperature and angular dependence of the spectra of defect modes
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 106, Is. 2. - P388-398. - ISSN 1063-7761, DOI 10.1134/S1063776108020179
Примечания : Cited References: 58
Предметные рубрики: LIQUID-CRYSTAL
TRANSMISSION SPECTRUM
BANDGAP STRUCTURES
PERIODIC STRUCTURE
REFRACTIVE-INDEX
LATTICE-DEFECTS
LASER
ENHANCEMENT
SILICON
MICROCAVITIES
Аннотация: Transmission spectra of a one-dimensional photonic crystal (PC) formed by two multilayer dielectric mirrors and a planar oriented layer of 5CB nematic liquid crystal (LC) that is sandwiched between these mirrors and serves as a structure defect are investigated experimentally. Specific features of the behavior of the spectrum of defect modes as a function of the angle of incidence of light on the crystal are studied for two polarizations: parallel and perpendicular to the director of the LC; the director either lies in the plane of incidence or is perpendicular to it. It is shown that, for the configurations considered, the maxima of the defect modes shift toward the short-wavelength region as the tilt angle of incidence radiation increases; this tendency is more manifest for the parallel-polarized component, when the director lies in the plane of incidence. In the latter case, the width of the photonic band gap (PBG) appreciably decreases. The temperature dependence of the polarization components of the transmission spectra of a PC is investigated in the case of normal incidence of light. The spectral shift of defect modes due to the variation of the refractive index of the LC at the nematic-isotropic liquid phase transition point is measured. It is shown that, in real PCs, the amplitude of defect modes decreases when approaching the center of the band gap, as well as when the number of layers in the dielectric mirrors increases. Theoretical transmission spectra of the PCs calculated by the method of recurrence relations with regard to the decay of defect modes are in good agreement with experimental data.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Bondarev I. A., Rautskii M. V., Lukyanenko A. V., Tarasov I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Room temperature spin accumulation effect in boron doped Si created by epitaxial Fe3Si/p-Si Schottky contact
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243046, 16-42-242036, 16-42-243060]
Место публикации : J. Surf. Ingestig. - 2018. - Vol. 12, Is. 4. - P.633-637. - ISSN 1027-4510, DOI 10.1134/S1027451018040171. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060.
Предметные рубрики: HYBRID STRUCTURES
CURRENT-VOLTAGE
FILMS
TRANSPORT
SILICON
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--schottky diode--hanle effect--spin--accumulation
Аннотация: To study spin-dependent transport phenomena in Fe3Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. IaEuro'V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe3Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe3Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Visotin M. A., Tarasov I. A., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
Место публикации : Acta Crystallogr. B. - 2020. - Vol. 76. - P.469-482. - ISSN 2052-5206(eISSN), DOI 10.1107/S2052520620005727
Примечания : Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi).
Предметные рубрики: THERMAL-EXPANSION
BETA-FESI2 FILMS
GROWTH
SILICON
DIFFRACTION
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Averyanov D. V., Tokmachev, Andrey M., Parfenov, Oleg E., Karateev, Igor A., Sokolov I. S., Taldenkov, Alexander N., Platunov M. S., Wilhelm, Fabrice, Rogalev, Andrei, Storchak V. G.
Заглавие : Probing proximity effects in the ferromagnetic semiconductor EuO
Коллективы : NRC "Kurchatov Institute"; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [19-07-00249]; Russian Science FoundationRussian Science Foundation (RSF) [19-19-00009]
Место публикации : Appl. Surf. Sci. - 2019. - Vol. 488. - P.107-114. - ISSN 0169-4332, DOI 10.1016/j.apsusc.2019.05.191. - ISSN 1873-5584(eISSN)
Примечания : Cited References: 57. - This work is partially supported by NRC "Kurchatov Institute" (synthesis), the Russian Foundation for Basic Research [grant 19-07-00249] (magnetization measurements), and the Russian Science Foundation [grant 19-19-00009] (transport measurements). The measurements have been carried out using the equipment of the resource centers of electrophysical, laboratory X-ray, and electron microscopy techniques of NRC "Kurchatov Institute". The authors also gratefully acknowledge the beamtime allocation (MA-3167) by the ESRF.
Предметные рубрики: INTERFACE
FIELD
POLARIZATION
INSULATOR
SILICON
Аннотация: Ferromagnetic insulators are widely employed to induce magnetic phenomena in adjacent layers via proximity effect. This approach could make non-magnetic materials (ranging from silicon to graphene) available for spintronic applications. Eu chalcogenides, EuO in particular, are highly efficient spin generators but suffer from low Curie temperatures. Here, experiments aimed at T-C increase in EuO by its integration with the ferromagnetic metal Gd are reported. The epitaxial bilayers Gd/EuO are synthesized on different substrates and characterized by a combination of diffraction and microscopy techniques. Their magnetic structure - established with magnetization and transport measurements as well as element-selective X-ray magnetic circular dichroism study - comprises coupled magnetic orders of EuO and Gd. EuO is robust against proximity effects - its T-C is still low, increased at most by a few tens of K. Nevertheless, the results encourage further studies of proximity-enhanced ferromagnetism to extend the range of applications of ultrathin layers of EuO in spintronics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bulgakov E. N., Maksimov D. N.
Заглавие : Nonlinear response from optical bound states in the continuum
Коллективы : Ministry of Education and Science of Russian Federation [N 3.1845.2017/4.6]
Место публикации : Sci Rep. - 2019. - Vol. 9. - Ст.7153. - ISSN 2045-2322, DOI 10.1038/s41598-019-43672-y
Примечания : Cited References: 48. - This work was supported by Ministry of Education and Science of Russian Federation (state contract N 3.1845.2017/4.6). We appreciate discussions with Ya Yan Lu, Lijun Yuan, Andrey M. Vyunishev, and Ivan V. Timofeev.
Предметные рубрики: WAVE-GUIDE
WAVELENGTH
RESONANCES
SILICON
LIGHT
Аннотация: We consider nonlinear effects in scattering of light by a periodic structure supporting optical bound states in the continuum. In the spectral vicinity of the bound states the scattered electromagnetic field is resonantly enhanced triggering optical bistability. Using coupled mode approach we derive a nonlinear equation for the amplitude of the resonant mode associated with the bound state. We show that such an equation for the isolated resonance can be easily solved yielding bistable solutions which are in quantitative agreement with the full-wave solutions of Maxwell's equations. The coupled mode approach allowed us to cast the the problem into the form of a driven nonlinear oscillator and analyze the onset of bistability under variation of the incident wave. The results presented drastically simplify the analysis nonlinear Maxwell's equations and, thus, can be instrumental in engineering optical response via bound states in the continuum.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bataleva Yu. V., Palyanov Y. N., Borzdov Y. M., Bayukov O. A., Sobolev N. V.
Заглавие : The formation of graphite upon the interaction of subducted carbonates and sulfur with metal-bearing rocks of the lithospheric mantle
Место публикации : Dokl. Earth Sci.: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 466, Is. 1. - P.88-91. - ISSN 1028334X (ISSN), DOI 10.1134/S1028334X16010190
Примечания : Cited References: 15. - This study was supported by the Russian Science Foundation (project no. 14-27-00054).
Предметные рубрики: Diamond formation
Silicon
Iron
Аннотация: Experimental studies of the Fe0–(Mg, Ca)CO3–S system were carried out during 18–20 h at 6.3 GPa, 900–1400°C. It is shown that the major processes resulting in the formation of free carbon include reduction of carbonates upon redox interaction with Fe0 (or Fe3C), extraction of carbon from iron carbide upon interaction with a sulfur melt/fluid, and reduction of the carbonate melt by Fe–S and Fe⎯S–C melts. Reconstruction of the processes of graphite formation indicates that carbonates and iron carbide may be potential sources of carbon under the conditions of subduction, and participation of the sulfur melt/fluid may result in the formation of mantle sulfides. © 2016, Pleiades Publishing, Ltd.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Eremin A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Frequency-dependent magnetotransport phenomena in a hybrid Fe/SiO2/p-Si structure
Место публикации : J. Appl. Phys.: American Institute of Physics, 2012. - Vol. 112, Is. 12. - Ст.123906. - ISSN 0021-8979, DOI 10.1063/1.4769788
Примечания : Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, Project No. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics, Project No. II.4.3; the Siberian Branch of the Russian Academy of Sciences, Integration Projects Nos. 85 and 102, and the Federal target program Scientific and Pedagogical Personnel of Innovative Russia (State Contract No. NK-556P_15).
Предметные рубрики: SILICON
IRON
SPINTRONICS
PAIRS
Аннотация: We report the large magnetoimpedance effect in a hybrid Fe/SiO2/p-Si structure with the Schottky barrier. The pronounced effect of magnetic field on the real and imaginary parts of the impedance has been found at temperatures 25-100K in two relatively narrow frequency ranges around 1 kHz and 100MHz. The observed frequency-dependent magnetotransport effect is related to the presence of localized "magnetic" states near the SiO2/p-Si interface. In these states, two different recharging processes with different relaxation times are implemented. One process is capture-emission of carriers that involves the interface levels and the valence band; the other is the electron tunneling between the ferromagnetic electrode and the interface states through SiO2 potential barrier. In the first case, the applied magnetic field shifts energy levels of the surface states relative to the valence band, which changes recharging characteristic times. In the second case, the magnetic field governs the spin-dependent tunneling of carriers through the potential barrier. The "magnetic" interface states originate, most likely, from the formation of the centers that contain Fe ions, which can easily diffuse through the SiO2 layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769788]
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Komogortsev S. V., Varnakov S. N., Satsuk S. A., Yakovlev I. A., Ovchinnikov S. G.
Заглавие : Magnetic anisotropy in Fe films deposited on SiO2/Si(001) and Si(001) substrates
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2014. - Vol. 351. - P.104-108. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2013.09.058. - ISSN 873-4766
Примечания : Cited References: 40. - The work has been supported by RFBR Grant 11-03-00168-a, 12-02-00943-a, 13-02-01265-a, Interdisciplinary integration of fundamental research of SB RAS (2012-2014) project No. 64. Also the study was supported by The Ministry of Education and Science of Russian Federation, project 14.513.11.0016.
Предметные рубрики: UNIAXIAL ANISOTROPY
SURFACE
SILICON
ROUGHNESS
Ключевые слова (''Своб.индексиров.''): epitaxial growth--iron--magnetic anisotropy--thin film
Аннотация: The magnetic anisotropy of 10 nm iron films deposited in an ultra high vacuum on the Si(001) surface and on the Si(001) over caped by 1.5 nm layer of SiO2 was investigated. There is in-plane uniaxial magnetic anisotropy caused by oblique sputtering in the Fe films on a SiO2 buffer layer. The easy magnetization axis is always normal to the atomic flux direction but the value of the anisotropy field is different depending on the axial angle among sputtering direction and the substrate crystallographic axes. It is argued that the uniaxial magnetic anisotropy results from elongated surface roughness formation during film deposition. Several easy magnetization axes are found in Fe/Si(001) film without the SiO2 buffer layer. The mutual orientation of the main easy axes and Si crystallographic axes indicates that there is epitaxial growth of Fe/Si(001) film with the following orientation relative to the substrate: Fe[100] ?Si[110]. The anisotropy energy of Fe/Si(001) film is estimated by simulation of angle dependence of remnant magnetization m r as the sum of the mr angle plot from uniaxial anisotropy (induced by oblique deposition) and the polar plot from biaxial magnetocrystalline anisotropy. В© 2013 Elsevier B.V.
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