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Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states / D. A. Smolyakov [et al.] // Thin Solid Films. - 2019. - Vol. 671. - P. 18-21, DOI 10.1016/j.tsf.2018.12.026. - Cited References: 15. - This study was supported by the Russian Foundation for Basic Research , project no. 18-32-00035 and supported in part by the Russian Foundation for Basic Research , Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243022, and the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences , project II.8.70, and the Presidium of the Russian Academy of Sciences , Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 0040-6090
Кл.слова (ненормированные):
Magnetoimpedance -- Spintronics -- Metal/insulator/semiconductor structures -- Nanosized semiconductors
Аннотация: This article presents the results of a study of the transport properties of metal/insulator/semiconductor (MIS) hybrid structures in alternating current (ac) mode. We prepared a series of samples with different layers of metal, insulator, and semiconductor. We prepared a series of samples with different layers of metal, insulator and semiconductor. Ferromagnetic Fe and non-magnetic Cu and Mn were chosen as metals, the insulators were SiO2 and Al2O3, and n- and p-type Si substrates were used as semiconductors. Temperature dependence of the real part of the impedance showed peculiar peaks below 40К for different combinations of metals, insulators and semiconductors. For all samples the effect of the magnetic field on the transport properties was studied. At low temperatures, the magnetic field shifts peaks toward higher temperatures. Metal magnetic state does not significantly affect this phenomenon. Changing the type of the insulator and its thickness also did not cause any significant effect. However, the effect was observed for samples with different composition. Moreover, the type of conductivity of the substrate, as well as the type of metal, determines the value of magnetoimpedance. The main role in the magnetoimpedance effect is played by recharge of the energy states localized at the insulator/semiconductor interface. This mechanism allows obtaining a MI effect even in “nonmagnetic” MIS structures; magnetoimpedance can be either positive or negative, depending on temperature and frequency. We suggest that the observed ac magnetotransport phenomena could be used for creating magnetic field sensors, working on new principles.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Masyugin, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Bondarev, I. A.; Бондарев, Илья Александрович; Kosyrev, N. N.; Косырев, Николай Николаевич; Volkov, N. V.; Волков, Никита Валентинович
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