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    Manipulation of Bi3+/In3+ Transmutation and Mn2+-Doping Effect on the Structure and Optical Properties of Double Perovskite Cs2NaBi1-xInxCl6 / J. Zhou [et al.] // Adv. Opt. Mater. - 2019. - Vol. 7, Is. 8. - Ст. 1801435, DOI 10.1002/adom.201801435. - Cited References: 51. - J.Z. and X.M.R. contributed equally to this work. The present work was supported by the National Natural Science Foundation of China (Grant Nos. 51722202, 51572023, and 91622125) and Natural Science Foundations of Beijing (2172036). X.W.Z. acknowledges the support from National Key R&D Program of China (Grant No. 2016YFB0700700). . - ISSN 2195-1071
   Перевод заглавия: Влияние перестановок Bi3+/In3+ и Mn2+ -допирования на структуру и оптические свойства двойного перовскита Cs2NaBi1-xInxCl6

РУБ Materials Science, Multidisciplinary + Optics
Рубрики:
HALIDE DOUBLE PEROVSKITE
   LEAD-FREE
   ENERGY-TRANSFER
   NANOCRYSTALS
   BR
Кл.слова (ненормированные):
band gap engineering -- halide double perovskites -- Mn2+ doping
Аннотация: The halide double perovskite family represented by A2(B+,B3+)X6 can overcome the lead toxicity and enable generally large band gap engineering via B/B sites' transmutation or exotic dopants to fulfill the emerging applications in the optoelectronic fields. Herein, the design and the experimental synthesis of a new family of Mn2+‐doped Cs2NaBi1‐xInxCl6 crystals with an intense orange‐yellow emission band are reported, and the phase formation stability is discussed via a combined experimental–theoretical approach. Depending on the manipulation of Bi3+/In3+ combination, the band gap increases with In3+ content, and a subsequent evolution from indirect to direct band gap is verified. First‐principles calculations and parity analyses indicate a parity forbidden effect on Cs2NaInCl6, and a combination effect of absorption on Cs2NaBi1‐xInxCl6 from both Cs2NaBiCl6 and Cs2NaInCl6. The associated Mn2+‐doped photoluminescence depending on the Bi3+/In3+ substitution is also addressed from the variation of the different Mn–Cl environment and neighboring‐cation effect.

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Держатели документа:
Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China.
Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Flexible Memory Mat & Devices, Shenzhen 518060, Peoples R China.
Shenzhen Univ, Coll Optoelect Engn, Minist Educ & Guangdong Prov, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China.
KSC SB RAS, Fed Res Ctr, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Dept Engn Phys & Radioelect, Krasnoyarsk 660041, Russia.
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia.
South China Univ Technol, State Key Lab Luminescent Mat, Guangzhou 510641, Guangdong, Peoples R China.
South China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Guangdong, Peoples R China.

Доп.точки доступа:
Zhou, Jun; Rong, Ximing; Zhang, Peng; Molokeev, M. S.; Молокеев, Максим Сергеевич; Wei, Peijia; Liu, Quanlin; Zhang, Xiuwen; Xia, Zhiguo
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