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    Dielectric properties of a mixed-valence Pb3Mn7O15 manganese oxide / N. V. Volkov [et al.] // J. Phys.: Condens. Matter. - 2010. - Vol. 22, Is. 37. - Ст. 375901, DOI 10.1088/0953-8984/22/37/375901. - Cited References: 14. - This study was supported by the Russian Foundation for Basic Research 'Siberia', project No. 09-02-98003, and the Siberian Branch of the Russian Academy of Sciences, integration project No. 101. . - ISSN 0953-8984
РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
cation -- lead -- manganese derivative -- oxide -- article -- chemical model -- chemistry -- crystallization -- electric conductivity -- electronics -- methodology -- temperature -- Cations -- Crystallization -- Electric Conductivity -- Electronics -- Lead -- Manganese Compounds -- Models, Chemical -- Oxides -- Temperature -- AC electric field -- Analysis of resistivity -- Carrier hopping -- Charge ordering -- Complex dielectric constant -- Crystal site -- Debye models -- Dielectric constants -- Dielectric spectra -- Frequency windows -- Lattice sites -- Low frequency -- Manganese ions -- Mixed valence -- Mixed valence state -- Relaxation behaviors -- Temperature range -- Electric fields -- Manganese -- Manganese oxide -- Permittivity -- Single crystals -- Crystal symmetry
Аннотация: We investigated the low-frequency dielectric properties of a Pb3Mn7O15 single crystal with manganese ions in the mixed-valence state (Mn3+/Mn4+). Dielectric relaxation was found in the frequency window from 20 to 100 kHz in the temperature range 110-180 K. The dielectric spectra of the crystal were analyzed using a Debye model. Estimations made within the model and analysis of resistivity data suggest that the relaxation behavior of the dielectric constant is related to polaronic charge carrier hopping. Around 250 K, charge ordering occurs in the crystal when the Mn3+ and Mn4+ ions are arranged in a specific order among the crystal sites. With a decrease in temperature, an ac electric field can induce a charge hop between the equivalent lattice sites available, related to crystal symmetry. This hopping is equivalent to the reorientation of an electric dipole that yields Debye-type behavior of the complex dielectric constant. The observed anisotropy in the behavior of the dielectric properties and resistivity can be attributed to a pronounced two-dimensional character of the crystal structure.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Sablina, K. A.
Sapronova, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
L V Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, Russia.
L V Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Sablina, K. A.; Саблина, Клара Александровна; Sapronova, N. V.
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