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Magnetic properties and the metal-insulator transition in GdXMn1-XS solid solutions / O. B. Romanova [et al.] // Solid State Commun. - 2010. - Vol. 150, Is. 13-14. - P. 602-604, DOI 10.1016/j.ssc.2009.12.042. - Cited References: 13. - This study was supported by the Russian Foundation for Basic Research project No. 09-02-00554_a; No. 09-02-92001-NNS_a; No. 08-02-90031 Bel_a and Belarus Foundation for Basic Research project No. F04-182; ADTF "Development of scientific potential of the higher school" No. 2.1.1/401. . - ISSN 0038-1098

РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
Insulator -- Metals -- Crystal growth -- Phase transitions -- Insulator -- Metals -- Crystal growth -- Phase transitions -- Insulator -- Metals -- Antiferromagnetic semiconductors -- Crystal growth -- Cubic lattice -- Metal-insulator phase transition -- Orders of magnitude -- P-type -- Temperature range -- Thermoelectric properties -- Thermopowers -- Antiferromagnetic materials -- Antiferromagnetism -- Crystal growth -- Crystallization -- Electric properties -- Gadolinium -- Grain boundaries -- Magnetic fields -- Magnetic properties -- Manganese -- Manganese compounds -- Metal insulator boundaries -- Metals -- Semiconductor growth -- Semiconductor insulator boundaries -- Sodium chloride -- Solid solutions -- Solidification -- Metal insulator transition
Аннотация: The structural, magnetic, electrical, and thermoelectric properties of GdXMn1-XS (0.01 <= X <= 0.3) solid solutions synthesized for the first time on the basis of alpha-MnS have been studied experimentally in the temperature range 77-1000 K in magnetic fields up to 10 kOe. The synthesized samples are antiferromagnetic semiconductors with an NaCl-type cubic lattice typical of a-MnS. Both concentration (X-c = 0.3) and temperature (T-c = 450 K) metal-insulator phase transitions have been observed. The concentration metal-insulator transition is accompanied by a decrease in resistivity and thermopower by twelve and two orders of magnitude, respectively, with the change in conductivity from p-type to n-type. (C) 2010 Elsevier Ltd. All rights reserved.

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Держатели документа:
[Romanova, O. B.
Ryabinkina, L. I.
Velikanov, D. A.
Balaev, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Sokolov, V. V.
Pichugin, A. Yu.] Russian Acad Sci, Inst Inorgan Chem, Siberian Branch, Novosibirsk 630090, Russia
[Galyas, A. I.
Demidenko, O. F.
Makovetskii, G. I.
Yanushkevich, K. I.] Natl Acad Sci Belarus, GO NPTs Mat Sci Ctr, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, 660036 Krasnoyarsk, Russian Federation
Institute of Inorganic Chemistry, Russian Academy of Sciences, Siberian Branch, 630090 Novosibirsk, Russian Federation
GO NPTs Materials Science Center, National Academy of Sciences of Belarus, 220072 Minsk, Belarus

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Sokolov, V. V.; Pichugin, A. Y.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Galyas, A. I.; Demidenko, O. F.; Makovetskii, G. I.; Yanushkevich, K. I.
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