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    Lead-Free Perovskite Derivative Cs2SnCl6−xBrx Single Crystals for Narrowband Photodetectors / J. Zhou [et al.] // Adv. Opt. Mater. - 2019. - Vol. 7, Is. 10. - Ст. 1900139, DOI 10.1002/adom.201900139. - Cited References: 26. - J.Z., J.J.L., X.M.R. contributed equally to this work. The present work was supported by the National Natural Science Foundation of China (Grants 51722202, 91622125, 51572023, and 11774239), Natural Science Foundations of Beijing (2172036), and National Key R&D Program of China (grant no. 2016YFB0700700). . - ISSN 2195-1071
   Перевод заглавия: Бессвинцовые монокристаллы производного перовскита Cs2SnCl6-xBrx для узкополосных фотоприемников
Кл.слова (ненормированные):
band structure -- Cs2SnBr6 -- Cs2SnCl6 -- lead-free perovskite derivatives -- narrowband photodetection
Аннотация: Lead-free and stable Sn halide perovskites demonstrate tremendous potential in the field of optoelectronic devices. Here, the structure and optical properties of the “defect” perovskites Cs2SnCl6−xBrx are reported, as well as their use as photodetector materials. Millimeter‐sized Cs2SnCl6−xBrx single crystals are grown by the hydrothermal method, with the body color continuously changing from transparent to yellow and finally to dark red. Narrowband single‐crystal photodetectors using Cs2SnCl6−xBrx crystals are presented, which show a high detectivity of ≈2.71 × 1010 Jones, with narrowband photodetection (full‐width at half‐maximum ≈45 nm) and high ion diffusion barriers. Moreover, the response spectra are continuously tuned from near violet to orange depending on the variation of the bandgap of the single crystals by changing the halide compositions. The strong surface charge recombination of the excess carriers near the crystal surfaces produced by short wavelength light elucidates the narrowband photodetection behavior. This work provides a new paradigm in the design of lead‐free, stable, and high‐performance perovskite derivatives for optoelectronics applications.

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Держатели документа:
The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China
Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Department of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation
State Key Laboratory of Luminescent Materials and Devices and Institute of Optical Communication Materials, South China University of Technology, Guangzhou, 510641, China

Доп.точки доступа:
Zhou, J.; Luo, J.; Rong, X.; Wei, P.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Huang, Y.; Zhao, J.; Liu, Q.; Zhang, X.; Tang, J.; Xia, Z.
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Germanium metasurfaces with lattice Kerker effect in near-infrared photodetectors / Z.-X. Zhou, M.-J. Ye, M.-W. Yu [et al.] // ACS Nano. - 2022. - Vol. 16. Is. 4. - P. 5994-6001, DOI 10.1021/acsnano.1c11326. - Cited References: 51. - We are grateful to Prof. Chun-Ting Lin and Prof. Chien-Chung Lin for helpful discussions. This work was supported by the Higher Education Sprout Project of the National Yang Ming Chiao Tung University and Ministry of Education and the Ministry of Science and Technology (MOST-111-2923-E-A49-001-MY3; 108-2923-E-009-003-MY3; 110-2224-E-009-002; 109-2628-E-009-007-MY3; 110-2221-E-A49-019-MY3). This research was also funded by the Russian Science Foundation (project no. 22-42-08003) . - ISSN 1936-0851
Кл.слова (ненормированные):
germanium (Ge) -- high refractive index (HRI) -- dielectric nanoantennas -- photodetector -- metasurfaces -- absorber
Аннотация: In O-and C-band optical communications, Ge is a promising material for detecting optical signals that are encoded into electrical signals. Herein, we study 2D periodic Ge metasurfaces that support optically induced electric dipole and magnetic dipole lattice resonances. By overlapping Mie resonances and electric dipole lattice resonances, we realize the resonant lattice Kerker effect and achieve narrowband absorption. This effect was applied to the photodetector demonstrated in this study. The absorptance of the Ge nanoantenna arrays increased 6-fold compared to that of the unpatterned Ge films. In addition, the photocurrent in such Ge metasurface photodetectors increases by approximately 5 times compared with that in plane Ge film photodetectors by the interaction of these strong near-fields with semiconductors and the further transformation of the optical energy into electricity.

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Держатели документа:
Institute of Photonic System, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 711, Taiwan
College of Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 711, Taiwan
Institute of Lighting and Energy Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 711, Taiwan
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131, United States
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Institute of Imaging and Biomedical Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 711, Taiwan

Доп.точки доступа:
Zhou, Z. -X.; Ye, M. -J.; Yu, M. -W.; Yang, J. -H.; Su, K. -L.; Yang, C. -C.; Lin, C. -Y.; Babicheva, V. E.; Timofeev, I. V.; Тимофеев, Иван Владимирович; Chen, K. -P.
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Wavelength- and angle-selective photodetectors enabled by graphene hot electrons with Tamm plasmon polaritons / C.-H. Huang, C.-H. Wu, R. G. Bikbaev [et al.] // Nanomaterials. - 2023. - Vol. 13, Is. 4. - Ст. 693, DOI 10.3390/nano13040693. - Cited References: 50. - This work is supported by the Higher Education Sprout Project of the National Yang Ming Chiao Tung University, National Tsing Hua University, Ministry of Education and the National Science and Technology Council (NSTC 110-2221-E-007-130-MY3; 109-2628-E-007-003-MY3; 111-2923-E-007-008-MY3; 111-2628-E-007-021; 111-2119-M-A49-006). This research was funded by the Russian Science Foundation (project no. 22-42-08003) . - ISSN 2079-4991
Кл.слова (ненормированные):
2D material -- Tamm plasmon polariton -- distributed Bragg reflector -- graphene -- photodetectors -- wavelength and angle selectivity -- LiDAR
Аннотация: Recently, two-dimensional materials have attracted attention owing to their special optical characteristics and miniaturization, with low thickness as well as extremely high responsivity. Additionally, Tamm plasmon polariton (TPP) resonance can be observed by combining a metal film and a one-dimensional (1D) photonic crystal (PC), where an electric field confinement is located at the metal–1D PC interface. In this study, a graphene layer combined with a TPP is proposed as a wavelength- and angle-selective photodetector. The graphene layer is located where the strong field confinement occurs, and the photocurrent response is significantly enhanced with increasing absorption by over four times (from 62.5 μA⋅W−1 to 271 μA⋅W−1 and undetected state to 330 μA⋅W−1 in two different samples). Moreover, the graphene–TPP photodetector has wavelength and angle selectivity, which can be applied in LiDAR detecting, sun sensors, laser beacon tracking, and navigational instruments in the future.

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Держатели документа:
Institute of Photonic System, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
College of Photonics, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
Siberian Federal University, 660041 Krasnoyarsk, Russia
Institute of Imaging and Biomedical Photonics, National Yang Ming Chiao Tung University, 301 Sec. 2, Gaofa 3rd Road, Tainan 711010, Taiwan
Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan

Доп.точки доступа:
Huang, Cheng-Han; Wu, Chia-Hung; Bikbaev, R. G.; Бикбаев, Рашид Гельмединович; Ye, Ming-Jyun; Chen, Chi-Wen; Wang, Tung-Jung; Timofeev, I. V.; Тимофеев, Иван Владимирович; Lee, Wei; Chen, Kuo-Ping
}
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