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    Su, Binbin.
    Mn2+-Based narrow-band green-emitting Cs3MnBr5 phosphor and the performance optimization by Zn2+ alloying / B. B. Su, M. S. Molokeev, Z. G. Xia // J. Mater. Chem. C. - 2019. - Vol. 7, Is. 36. - P. 11220-11226, DOI 10.1039/c9tc04127c. - Cited References: 24. - The present work was supported by the National Natural Science Foundations of China (Grant No. 51722202, 51972118 and 51572023), Natural Science Foundations of Beijing (2172036) and the Guangdong Provincial Science & Technology Project (no. 2018A050506004). . - ISSN 2050-7526. - ISSN 2050-7534
   Перевод заглавия: Узкополосный зеленый люминофор Cs3MnBr5 на основе Mn2+ и оптимизация рабочих характеристик путем легирования Zn2+
РУБ Materials Science, Multidisciplinary + Physics, Applied
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THERMAL-STABILITY
   BACKLIGHT

   EMISSION

Аннотация: To discover new narrow-band green-emitting phosphors is a challenge for backlighting light-emitting diodes (LEDs) used in liquid crystal displays (LCDs). The synthesis and optical properties of Cs3MnBr5 are demonstrated herein. The intrinsic Mn2+ luminescence without concentration quenching leads to intense green emission at 520 nm with narrow full width at half maximum of 42 nm and high photoluminescence quantum yield (PLQY) of 49% under the excitation at 460 nm. When a small amount of Zn2+ is introduced into Cs3MnBr5, the luminescence intensity decreases slightly. However, the thermal stability of Cs3MnBr5 is improved from 82% to 87% with the intensity values at 423 K compared to that at 298 K. The white LED device fabricated using Cs3Mn0.96Zn0.04Br5 (green) and K2SiF6:Mn4+ (red) phosphors with a blue LED chip exhibit a high luminous efficiency (107.76 lm W-1) and wide color gamut (101% National Television System Committee standard (NTSC) in Commission Internationale de L'Eclairage (CIE) 1931 color space), demonstrating its potential application in wide color gamut LCD backlights.

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Держатели документа:
South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China.
South China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Guangdong, Peoples R China.
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia.

Доп.точки доступа:
Molokeev, M. S.; Молокеев, Максим Сергеевич; Xia, Zhiguo
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